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Accumulated Strain

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Yasuhiko Arakawa – One of the best experts on this subject based on the ideXlab platform.

  • effects of Accumulated Strain on the surface and optical properties of stacked 1 3 μm inas gaas quantum dot structures
    Physica E-low-dimensional Systems & Nanostructures, 2008
    Co-Authors: Tao Yang, Jun Tatebayashi, Masao Nishioka, Yasuhiko Arakawa

    Abstract:

    We report the effects of Accumulated Strain by stacking on the surface and optical properties of stacked 1.3 mu m InAs/GaAs quantum dot (QD) structures grown by MOCVD. It is found that the surface of the stacked QD structures becomes more and more undulated with stacking, due to the increased Strain in the stacked QD structures with stacking. The photoluminescence intensity from the QD structures first increases as the stacking number increases from 1 to 3 and then dramatically decreases as it further increases, implying a significant increase in the density of crystal defects in the stacked QD structures due to the Accumulated Strain. Furthermore, we demonstrate that the Strain can be reduced by simply introducing annealing steps just after growing the GaAs spacers during the deposition of the stacked QD structures, leading to significant improvement in the surface and optical properties of the structures. (C) 2007 Elsevier B.V. All rights reserved.

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  • Effects of Accumulated Strain on the surface and optical properties of stacked 1.3 μm InAs/GaAs quantum dot structures
    Physica E: Low-dimensional Systems and Nanostructures, 2008
    Co-Authors: Tao Yang, Jun Tatebayashi, Masao Nishioka, Yasuhiko Arakawa

    Abstract:

    We report the effects of Accumulated Strain by stacking on the surface and optical properties of stacked 1.3 mu m InAs/GaAs quantum dot (QD) structures grown by MOCVD. It is found that the surface of the stacked QD structures becomes more and more undulated with stacking, due to the increased Strain in the stacked QD structures with stacking. The photoluminescence intensity from the QD structures first increases as the stacking number increases from 1 to 3 and then dramatically decreases as it further increases, implying a significant increase in the density of crystal defects in the stacked QD structures due to the Accumulated Strain. Furthermore, we demonstrate that the Strain can be reduced by simply introducing annealing steps just after growing the GaAs spacers during the deposition of the stacked QD structures, leading to significant improvement in the surface and optical properties of the structures. (C) 2007 Elsevier B.V. All rights reserved.

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A. L. Vorontsov – One of the best experts on this subject based on the ideXlab platform.

  • Theoretical aspects of technological mechanics. 9. Strain and Accumulated Strain. Part 2
    Russian Engineering Research, 2014
    Co-Authors: A. L. Vorontsov

    Abstract:

    Attention focuses on determining the deformed state of a blank and taking account of the hardening in upsetting and during the insertion of a punch in a half-space.

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  • Theoretical aspects of technological mechanics. 9. Strain and Accumulated Strain. Part 1
    Russian Engineering Research, 2014
    Co-Authors: A. L. Vorontsov

    Abstract:

    Attention focuses on determining the deformed state of a blank and taking account of the hardening by means of applied plasticity theory. New solutions are outlined for the deformed state of the blank in upsetting and during the insertion of a punch in a half-space.

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Tao Yang – One of the best experts on this subject based on the ideXlab platform.

  • effects of Accumulated Strain on the surface and optical properties of stacked 1 3 μm inas gaas quantum dot structures
    Physica E-low-dimensional Systems & Nanostructures, 2008
    Co-Authors: Tao Yang, Jun Tatebayashi, Masao Nishioka, Yasuhiko Arakawa

    Abstract:

    We report the effects of Accumulated Strain by stacking on the surface and optical properties of stacked 1.3 mu m InAs/GaAs quantum dot (QD) structures grown by MOCVD. It is found that the surface of the stacked QD structures becomes more and more undulated with stacking, due to the increased Strain in the stacked QD structures with stacking. The photoluminescence intensity from the QD structures first increases as the stacking number increases from 1 to 3 and then dramatically decreases as it further increases, implying a significant increase in the density of crystal defects in the stacked QD structures due to the Accumulated Strain. Furthermore, we demonstrate that the Strain can be reduced by simply introducing annealing steps just after growing the GaAs spacers during the deposition of the stacked QD structures, leading to significant improvement in the surface and optical properties of the structures. (C) 2007 Elsevier B.V. All rights reserved.

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  • Effects of Accumulated Strain on the surface and optical properties of stacked 1.3 μm InAs/GaAs quantum dot structures
    Physica E: Low-dimensional Systems and Nanostructures, 2008
    Co-Authors: Tao Yang, Jun Tatebayashi, Masao Nishioka, Yasuhiko Arakawa

    Abstract:

    We report the effects of Accumulated Strain by stacking on the surface and optical properties of stacked 1.3 mu m InAs/GaAs quantum dot (QD) structures grown by MOCVD. It is found that the surface of the stacked QD structures becomes more and more undulated with stacking, due to the increased Strain in the stacked QD structures with stacking. The photoluminescence intensity from the QD structures first increases as the stacking number increases from 1 to 3 and then dramatically decreases as it further increases, implying a significant increase in the density of crystal defects in the stacked QD structures due to the Accumulated Strain. Furthermore, we demonstrate that the Strain can be reduced by simply introducing annealing steps just after growing the GaAs spacers during the deposition of the stacked QD structures, leading to significant improvement in the surface and optical properties of the structures. (C) 2007 Elsevier B.V. All rights reserved.

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