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Takashi Mukai – One of the best experts on this subject based on the ideXlab platform.

  • Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting
    Applied Physics Express, 2008
    Co-Authors: Mitsuru Funato, Masaya Ueda, Takeshi Kondou, Yoichi Kawakami, Yukio Narukawa, Keita Hayashi, Shotaro Nishiura, Takashi Mukai
    Abstract:

    Monolithic polychromatic light-emitting diodes (LEDs) based on micro-structured InGaN/GaN quantum wells are demonstrated. The microstructure is created through regrowth on SiO2 mask stripes along the [1100] direction and consists of (0001) and {1122} facets. The LEDs exhibit polychromatic emission, including white, due to the Additive Color mixture of facet-dependent emission Colors. Altering the growth conditions and mask geometry easily controls the apparent emission Color. Furthermore, simulations predict high light extraction efficiencies due to their three-dimensional structures. Those observations suggest that the proposed phosphor-free LEDs may lead to highly efficient solid-state lighting in which the Color spectra of light sources are synthesized to satisfy specific requirements for illuminations.

  • Additive Color mixture of emission from ingan gan quantum wells on structure controlled gan microfacets
    Applied Physics Letters, 2007
    Co-Authors: Masaya Ueda, Takeshi Kondou, Kouichi Hayashi, Mitsuru Funato, Yoichi Kawakami, Yukio Narukawa, Takashi Mukai
    Abstract:

    Altering the mask geometry controls the apparent emission Color from InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes over a wide spectral range, including white. The mask stripes are along the ⟨11¯00⟩ direction and the microfacet structure is composed of the (0001) and {112¯2} planes. With a large occupancy of the mask opening within a period, both facets simultaneously appear and emit different Colors. For example, the {112¯2} facet QWs emit blue and the (0001) facet QWs emit green. On the other hand, with a small occupancy of the mask opening, the {112¯2} facets become dominant and a greenish-blue light is emitted. To synthesize these spectra, the mask patterns are designed so that two different microfacet structures are included within a period. Hence, the macroscopically observed emission Color, which depends on the pattern design, can change from green to purple through white due to the Additive Color mixture.

  • Additive Color mixture of emission from InGaN∕GaN quantum wells on structure-controlled GaN microfacets
    Applied Physics Letters, 2007
    Co-Authors: Masaya Ueda, Takeshi Kondou, Kouichi Hayashi, Mitsuru Funato, Yoichi Kawakami, Yukio Narukawa, Takashi Mukai
    Abstract:

    Altering the mask geometry controls the apparent emission Color from InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes over a wide spectral range, including white. The mask stripes are along the ⟨11¯00⟩ direction and the microfacet structure is composed of the (0001) and {112¯2} planes. With a large occupancy of the mask opening within a period, both facets simultaneously appear and emit different Colors. For example, the {112¯2} facet QWs emit blue and the (0001) facet QWs emit green. On the other hand, with a small occupancy of the mask opening, the {112¯2} facets become dominant and a greenish-blue light is emitted. To synthesize these spectra, the mask patterns are designed so that two different microfacet structures are included within a period. Hence, the macroscopically observed emission Color, which depends on the pattern design, can change from green to purple through white due to the Additive Color mixture.

Mitsuru Funato – One of the best experts on this subject based on the ideXlab platform.

  • Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting
    Applied Physics Express, 2008
    Co-Authors: Mitsuru Funato, Masaya Ueda, Takeshi Kondou, Yoichi Kawakami, Yukio Narukawa, Keita Hayashi, Shotaro Nishiura, Takashi Mukai
    Abstract:

    Monolithic polychromatic light-emitting diodes (LEDs) based on micro-structured InGaN/GaN quantum wells are demonstrated. The microstructure is created through regrowth on SiO2 mask stripes along the [1100] direction and consists of (0001) and {1122} facets. The LEDs exhibit polychromatic emission, including white, due to the Additive Color mixture of facet-dependent emission Colors. Altering the growth conditions and mask geometry easily controls the apparent emission Color. Furthermore, simulations predict high light extraction efficiencies due to their three-dimensional structures. Those observations suggest that the proposed phosphor-free LEDs may lead to highly efficient solid-state lighting in which the Color spectra of light sources are synthesized to satisfy specific requirements for illuminations.

  • Additive Color mixture of emission from ingan gan quantum wells on structure controlled gan microfacets
    Applied Physics Letters, 2007
    Co-Authors: Masaya Ueda, Takeshi Kondou, Kouichi Hayashi, Mitsuru Funato, Yoichi Kawakami, Yukio Narukawa, Takashi Mukai
    Abstract:

    Altering the mask geometry controls the apparent emission Color from InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes over a wide spectral range, including white. The mask stripes are along the ⟨11¯00⟩ direction and the microfacet structure is composed of the (0001) and {112¯2} planes. With a large occupancy of the mask opening within a period, both facets simultaneously appear and emit different Colors. For example, the {112¯2} facet QWs emit blue and the (0001) facet QWs emit green. On the other hand, with a small occupancy of the mask opening, the {112¯2} facets become dominant and a greenish-blue light is emitted. To synthesize these spectra, the mask patterns are designed so that two different microfacet structures are included within a period. Hence, the macroscopically observed emission Color, which depends on the pattern design, can change from green to purple through white due to the Additive Color mixture.

  • Additive Color mixture of emission from InGaN∕GaN quantum wells on structure-controlled GaN microfacets
    Applied Physics Letters, 2007
    Co-Authors: Masaya Ueda, Takeshi Kondou, Kouichi Hayashi, Mitsuru Funato, Yoichi Kawakami, Yukio Narukawa, Takashi Mukai
    Abstract:

    Altering the mask geometry controls the apparent emission Color from InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes over a wide spectral range, including white. The mask stripes are along the ⟨11¯00⟩ direction and the microfacet structure is composed of the (0001) and {112¯2} planes. With a large occupancy of the mask opening within a period, both facets simultaneously appear and emit different Colors. For example, the {112¯2} facet QWs emit blue and the (0001) facet QWs emit green. On the other hand, with a small occupancy of the mask opening, the {112¯2} facets become dominant and a greenish-blue light is emitted. To synthesize these spectra, the mask patterns are designed so that two different microfacet structures are included within a period. Hence, the macroscopically observed emission Color, which depends on the pattern design, can change from green to purple through white due to the Additive Color mixture.

Yukio Narukawa – One of the best experts on this subject based on the ideXlab platform.

  • Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting
    Applied Physics Express, 2008
    Co-Authors: Mitsuru Funato, Masaya Ueda, Takeshi Kondou, Yoichi Kawakami, Yukio Narukawa, Keita Hayashi, Shotaro Nishiura, Takashi Mukai
    Abstract:

    Monolithic polychromatic light-emitting diodes (LEDs) based on micro-structured InGaN/GaN quantum wells are demonstrated. The microstructure is created through regrowth on SiO2 mask stripes along the [1100] direction and consists of (0001) and {1122} facets. The LEDs exhibit polychromatic emission, including white, due to the Additive Color mixture of facet-dependent emission Colors. Altering the growth conditions and mask geometry easily controls the apparent emission Color. Furthermore, simulations predict high light extraction efficiencies due to their three-dimensional structures. Those observations suggest that the proposed phosphor-free LEDs may lead to highly efficient solid-state lighting in which the Color spectra of light sources are synthesized to satisfy specific requirements for illuminations.

  • Additive Color mixture of emission from ingan gan quantum wells on structure controlled gan microfacets
    Applied Physics Letters, 2007
    Co-Authors: Masaya Ueda, Takeshi Kondou, Kouichi Hayashi, Mitsuru Funato, Yoichi Kawakami, Yukio Narukawa, Takashi Mukai
    Abstract:

    Altering the mask geometry controls the apparent emission Color from InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes over a wide spectral range, including white. The mask stripes are along the ⟨11¯00⟩ direction and the microfacet structure is composed of the (0001) and {112¯2} planes. With a large occupancy of the mask opening within a period, both facets simultaneously appear and emit different Colors. For example, the {112¯2} facet QWs emit blue and the (0001) facet QWs emit green. On the other hand, with a small occupancy of the mask opening, the {112¯2} facets become dominant and a greenish-blue light is emitted. To synthesize these spectra, the mask patterns are designed so that two different microfacet structures are included within a period. Hence, the macroscopically observed emission Color, which depends on the pattern design, can change from green to purple through white due to the Additive Color mixture.

  • Additive Color mixture of emission from InGaN∕GaN quantum wells on structure-controlled GaN microfacets
    Applied Physics Letters, 2007
    Co-Authors: Masaya Ueda, Takeshi Kondou, Kouichi Hayashi, Mitsuru Funato, Yoichi Kawakami, Yukio Narukawa, Takashi Mukai
    Abstract:

    Altering the mask geometry controls the apparent emission Color from InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes over a wide spectral range, including white. The mask stripes are along the ⟨11¯00⟩ direction and the microfacet structure is composed of the (0001) and {112¯2} planes. With a large occupancy of the mask opening within a period, both facets simultaneously appear and emit different Colors. For example, the {112¯2} facet QWs emit blue and the (0001) facet QWs emit green. On the other hand, with a small occupancy of the mask opening, the {112¯2} facets become dominant and a greenish-blue light is emitted. To synthesize these spectra, the mask patterns are designed so that two different microfacet structures are included within a period. Hence, the macroscopically observed emission Color, which depends on the pattern design, can change from green to purple through white due to the Additive Color mixture.

Yoichi Kawakami – One of the best experts on this subject based on the ideXlab platform.

  • Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting
    Applied Physics Express, 2008
    Co-Authors: Mitsuru Funato, Masaya Ueda, Takeshi Kondou, Yoichi Kawakami, Yukio Narukawa, Keita Hayashi, Shotaro Nishiura, Takashi Mukai
    Abstract:

    Monolithic polychromatic light-emitting diodes (LEDs) based on micro-structured InGaN/GaN quantum wells are demonstrated. The microstructure is created through regrowth on SiO2 mask stripes along the [1100] direction and consists of (0001) and {1122} facets. The LEDs exhibit polychromatic emission, including white, due to the Additive Color mixture of facet-dependent emission Colors. Altering the growth conditions and mask geometry easily controls the apparent emission Color. Furthermore, simulations predict high light extraction efficiencies due to their three-dimensional structures. Those observations suggest that the proposed phosphor-free LEDs may lead to highly efficient solid-state lighting in which the Color spectra of light sources are synthesized to satisfy specific requirements for illuminations.

  • Additive Color mixture of emission from ingan gan quantum wells on structure controlled gan microfacets
    Applied Physics Letters, 2007
    Co-Authors: Masaya Ueda, Takeshi Kondou, Kouichi Hayashi, Mitsuru Funato, Yoichi Kawakami, Yukio Narukawa, Takashi Mukai
    Abstract:

    Altering the mask geometry controls the apparent emission Color from InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes over a wide spectral range, including white. The mask stripes are along the ⟨11¯00⟩ direction and the microfacet structure is composed of the (0001) and {112¯2} planes. With a large occupancy of the mask opening within a period, both facets simultaneously appear and emit different Colors. For example, the {112¯2} facet QWs emit blue and the (0001) facet QWs emit green. On the other hand, with a small occupancy of the mask opening, the {112¯2} facets become dominant and a greenish-blue light is emitted. To synthesize these spectra, the mask patterns are designed so that two different microfacet structures are included within a period. Hence, the macroscopically observed emission Color, which depends on the pattern design, can change from green to purple through white due to the Additive Color mixture.

  • Additive Color mixture of emission from InGaN∕GaN quantum wells on structure-controlled GaN microfacets
    Applied Physics Letters, 2007
    Co-Authors: Masaya Ueda, Takeshi Kondou, Kouichi Hayashi, Mitsuru Funato, Yoichi Kawakami, Yukio Narukawa, Takashi Mukai
    Abstract:

    Altering the mask geometry controls the apparent emission Color from InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes over a wide spectral range, including white. The mask stripes are along the ⟨11¯00⟩ direction and the microfacet structure is composed of the (0001) and {112¯2} planes. With a large occupancy of the mask opening within a period, both facets simultaneously appear and emit different Colors. For example, the {112¯2} facet QWs emit blue and the (0001) facet QWs emit green. On the other hand, with a small occupancy of the mask opening, the {112¯2} facets become dominant and a greenish-blue light is emitted. To synthesize these spectra, the mask patterns are designed so that two different microfacet structures are included within a period. Hence, the macroscopically observed emission Color, which depends on the pattern design, can change from green to purple through white due to the Additive Color mixture.

Takeshi Kondou – One of the best experts on this subject based on the ideXlab platform.

  • Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting
    Applied Physics Express, 2008
    Co-Authors: Mitsuru Funato, Masaya Ueda, Takeshi Kondou, Yoichi Kawakami, Yukio Narukawa, Keita Hayashi, Shotaro Nishiura, Takashi Mukai
    Abstract:

    Monolithic polychromatic light-emitting diodes (LEDs) based on micro-structured InGaN/GaN quantum wells are demonstrated. The microstructure is created through regrowth on SiO2 mask stripes along the [1100] direction and consists of (0001) and {1122} facets. The LEDs exhibit polychromatic emission, including white, due to the Additive Color mixture of facet-dependent emission Colors. Altering the growth conditions and mask geometry easily controls the apparent emission Color. Furthermore, simulations predict high light extraction efficiencies due to their three-dimensional structures. Those observations suggest that the proposed phosphor-free LEDs may lead to highly efficient solid-state lighting in which the Color spectra of light sources are synthesized to satisfy specific requirements for illuminations.

  • Additive Color mixture of emission from ingan gan quantum wells on structure controlled gan microfacets
    Applied Physics Letters, 2007
    Co-Authors: Masaya Ueda, Takeshi Kondou, Kouichi Hayashi, Mitsuru Funato, Yoichi Kawakami, Yukio Narukawa, Takashi Mukai
    Abstract:

    Altering the mask geometry controls the apparent emission Color from InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes over a wide spectral range, including white. The mask stripes are along the ⟨11¯00⟩ direction and the microfacet structure is composed of the (0001) and {112¯2} planes. With a large occupancy of the mask opening within a period, both facets simultaneously appear and emit different Colors. For example, the {112¯2} facet QWs emit blue and the (0001) facet QWs emit green. On the other hand, with a small occupancy of the mask opening, the {112¯2} facets become dominant and a greenish-blue light is emitted. To synthesize these spectra, the mask patterns are designed so that two different microfacet structures are included within a period. Hence, the macroscopically observed emission Color, which depends on the pattern design, can change from green to purple through white due to the Additive Color mixture.

  • Additive Color mixture of emission from InGaN∕GaN quantum wells on structure-controlled GaN microfacets
    Applied Physics Letters, 2007
    Co-Authors: Masaya Ueda, Takeshi Kondou, Kouichi Hayashi, Mitsuru Funato, Yoichi Kawakami, Yukio Narukawa, Takashi Mukai
    Abstract:

    Altering the mask geometry controls the apparent emission Color from InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes over a wide spectral range, including white. The mask stripes are along the ⟨11¯00⟩ direction and the microfacet structure is composed of the (0001) and {112¯2} planes. With a large occupancy of the mask opening within a period, both facets simultaneously appear and emit different Colors. For example, the {112¯2} facet QWs emit blue and the (0001) facet QWs emit green. On the other hand, with a small occupancy of the mask opening, the {112¯2} facets become dominant and a greenish-blue light is emitted. To synthesize these spectra, the mask patterns are designed so that two different microfacet structures are included within a period. Hence, the macroscopically observed emission Color, which depends on the pattern design, can change from green to purple through white due to the Additive Color mixture.