The Experts below are selected from a list of 252 Experts worldwide ranked by ideXlab platform
Takashi Mukai - One of the best experts on this subject based on the ideXlab platform.
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Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting
Applied Physics Express, 2008Co-Authors: Mitsuru Funato, Masaya Ueda, Takeshi Kondou, Yoichi Kawakami, Yukio Narukawa, Keita Hayashi, Shotaro Nishiura, Takashi MukaiAbstract:Monolithic polychromatic light-emitting diodes (LEDs) based on micro-structured InGaN/GaN quantum wells are demonstrated. The microstructure is created through regrowth on SiO2 mask stripes along the [1100] direction and consists of (0001) and {1122} facets. The LEDs exhibit polychromatic emission, including white, due to the Additive Color mixture of facet-dependent emission Colors. Altering the growth conditions and mask geometry easily controls the apparent emission Color. Furthermore, simulations predict high light extraction efficiencies due to their three-dimensional structures. Those observations suggest that the proposed phosphor-free LEDs may lead to highly efficient solid-state lighting in which the Color spectra of light sources are synthesized to satisfy specific requirements for illuminations.
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Additive Color mixture of emission from ingan gan quantum wells on structure controlled gan microfacets
Applied Physics Letters, 2007Co-Authors: Masaya Ueda, Takeshi Kondou, Kouichi Hayashi, Mitsuru Funato, Yoichi Kawakami, Yukio Narukawa, Takashi MukaiAbstract:Altering the mask geometry controls the apparent emission Color from InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes over a wide spectral range, including white. The mask stripes are along the ⟨11¯00⟩ direction and the microfacet structure is composed of the (0001) and {112¯2} planes. With a large occupancy of the mask opening within a period, both facets simultaneously appear and emit different Colors. For example, the {112¯2} facet QWs emit blue and the (0001) facet QWs emit green. On the other hand, with a small occupancy of the mask opening, the {112¯2} facets become dominant and a greenish-blue light is emitted. To synthesize these spectra, the mask patterns are designed so that two different microfacet structures are included within a period. Hence, the macroscopically observed emission Color, which depends on the pattern design, can change from green to purple through white due to the Additive Color mixture.
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Additive Color mixture of emission from InGaN∕GaN quantum wells on structure-controlled GaN microfacets
Applied Physics Letters, 2007Co-Authors: Masaya Ueda, Takeshi Kondou, Kouichi Hayashi, Mitsuru Funato, Yoichi Kawakami, Yukio Narukawa, Takashi MukaiAbstract:Altering the mask geometry controls the apparent emission Color from InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes over a wide spectral range, including white. The mask stripes are along the ⟨11¯00⟩ direction and the microfacet structure is composed of the (0001) and {112¯2} planes. With a large occupancy of the mask opening within a period, both facets simultaneously appear and emit different Colors. For example, the {112¯2} facet QWs emit blue and the (0001) facet QWs emit green. On the other hand, with a small occupancy of the mask opening, the {112¯2} facets become dominant and a greenish-blue light is emitted. To synthesize these spectra, the mask patterns are designed so that two different microfacet structures are included within a period. Hence, the macroscopically observed emission Color, which depends on the pattern design, can change from green to purple through white due to the Additive Color mixture.
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Tailored emission Color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors
Applied Physics Letters, 2006Co-Authors: Mitsuru Funato, Takeshi Kondou, Yoichi Kawakami, Yukio Narukawa, Teruhisa Kotani, Takashi MukaiAbstract:A Color synthesis based on InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes is demonstrated. The microfacet structure is composed of (0001), {112¯2}, and {112¯0} planes, and the InGaN well thickness and composition are spatially inhomogeneous due to the diffusion of the adatoms among the facets. These properties allow microfacet QWs, which, for example, emit yellow from the (0001) facet and blue from the {112¯2} facet, to be fabricated, of which the luminescence appears white due to the Additive Color mixing. Using a mask pattern that consists of regions with and without stripes, the emissions from the microfacet QWs and from planar QWs are synthesized to produce the desired apparent output Colors.
Mitsuru Funato - One of the best experts on this subject based on the ideXlab platform.
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Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting
Applied Physics Express, 2008Co-Authors: Mitsuru Funato, Masaya Ueda, Takeshi Kondou, Yoichi Kawakami, Yukio Narukawa, Keita Hayashi, Shotaro Nishiura, Takashi MukaiAbstract:Monolithic polychromatic light-emitting diodes (LEDs) based on micro-structured InGaN/GaN quantum wells are demonstrated. The microstructure is created through regrowth on SiO2 mask stripes along the [1100] direction and consists of (0001) and {1122} facets. The LEDs exhibit polychromatic emission, including white, due to the Additive Color mixture of facet-dependent emission Colors. Altering the growth conditions and mask geometry easily controls the apparent emission Color. Furthermore, simulations predict high light extraction efficiencies due to their three-dimensional structures. Those observations suggest that the proposed phosphor-free LEDs may lead to highly efficient solid-state lighting in which the Color spectra of light sources are synthesized to satisfy specific requirements for illuminations.
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Additive Color mixture of emission from ingan gan quantum wells on structure controlled gan microfacets
Applied Physics Letters, 2007Co-Authors: Masaya Ueda, Takeshi Kondou, Kouichi Hayashi, Mitsuru Funato, Yoichi Kawakami, Yukio Narukawa, Takashi MukaiAbstract:Altering the mask geometry controls the apparent emission Color from InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes over a wide spectral range, including white. The mask stripes are along the ⟨11¯00⟩ direction and the microfacet structure is composed of the (0001) and {112¯2} planes. With a large occupancy of the mask opening within a period, both facets simultaneously appear and emit different Colors. For example, the {112¯2} facet QWs emit blue and the (0001) facet QWs emit green. On the other hand, with a small occupancy of the mask opening, the {112¯2} facets become dominant and a greenish-blue light is emitted. To synthesize these spectra, the mask patterns are designed so that two different microfacet structures are included within a period. Hence, the macroscopically observed emission Color, which depends on the pattern design, can change from green to purple through white due to the Additive Color mixture.
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Additive Color mixture of emission from InGaN∕GaN quantum wells on structure-controlled GaN microfacets
Applied Physics Letters, 2007Co-Authors: Masaya Ueda, Takeshi Kondou, Kouichi Hayashi, Mitsuru Funato, Yoichi Kawakami, Yukio Narukawa, Takashi MukaiAbstract:Altering the mask geometry controls the apparent emission Color from InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes over a wide spectral range, including white. The mask stripes are along the ⟨11¯00⟩ direction and the microfacet structure is composed of the (0001) and {112¯2} planes. With a large occupancy of the mask opening within a period, both facets simultaneously appear and emit different Colors. For example, the {112¯2} facet QWs emit blue and the (0001) facet QWs emit green. On the other hand, with a small occupancy of the mask opening, the {112¯2} facets become dominant and a greenish-blue light is emitted. To synthesize these spectra, the mask patterns are designed so that two different microfacet structures are included within a period. Hence, the macroscopically observed emission Color, which depends on the pattern design, can change from green to purple through white due to the Additive Color mixture.
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Tailored emission Color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors
Applied Physics Letters, 2006Co-Authors: Mitsuru Funato, Takeshi Kondou, Yoichi Kawakami, Yukio Narukawa, Teruhisa Kotani, Takashi MukaiAbstract:A Color synthesis based on InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes is demonstrated. The microfacet structure is composed of (0001), {112¯2}, and {112¯0} planes, and the InGaN well thickness and composition are spatially inhomogeneous due to the diffusion of the adatoms among the facets. These properties allow microfacet QWs, which, for example, emit yellow from the (0001) facet and blue from the {112¯2} facet, to be fabricated, of which the luminescence appears white due to the Additive Color mixing. Using a mask pattern that consists of regions with and without stripes, the emissions from the microfacet QWs and from planar QWs are synthesized to produce the desired apparent output Colors.
Yukio Narukawa - One of the best experts on this subject based on the ideXlab platform.
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Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting
Applied Physics Express, 2008Co-Authors: Mitsuru Funato, Masaya Ueda, Takeshi Kondou, Yoichi Kawakami, Yukio Narukawa, Keita Hayashi, Shotaro Nishiura, Takashi MukaiAbstract:Monolithic polychromatic light-emitting diodes (LEDs) based on micro-structured InGaN/GaN quantum wells are demonstrated. The microstructure is created through regrowth on SiO2 mask stripes along the [1100] direction and consists of (0001) and {1122} facets. The LEDs exhibit polychromatic emission, including white, due to the Additive Color mixture of facet-dependent emission Colors. Altering the growth conditions and mask geometry easily controls the apparent emission Color. Furthermore, simulations predict high light extraction efficiencies due to their three-dimensional structures. Those observations suggest that the proposed phosphor-free LEDs may lead to highly efficient solid-state lighting in which the Color spectra of light sources are synthesized to satisfy specific requirements for illuminations.
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Additive Color mixture of emission from ingan gan quantum wells on structure controlled gan microfacets
Applied Physics Letters, 2007Co-Authors: Masaya Ueda, Takeshi Kondou, Kouichi Hayashi, Mitsuru Funato, Yoichi Kawakami, Yukio Narukawa, Takashi MukaiAbstract:Altering the mask geometry controls the apparent emission Color from InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes over a wide spectral range, including white. The mask stripes are along the ⟨11¯00⟩ direction and the microfacet structure is composed of the (0001) and {112¯2} planes. With a large occupancy of the mask opening within a period, both facets simultaneously appear and emit different Colors. For example, the {112¯2} facet QWs emit blue and the (0001) facet QWs emit green. On the other hand, with a small occupancy of the mask opening, the {112¯2} facets become dominant and a greenish-blue light is emitted. To synthesize these spectra, the mask patterns are designed so that two different microfacet structures are included within a period. Hence, the macroscopically observed emission Color, which depends on the pattern design, can change from green to purple through white due to the Additive Color mixture.
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Additive Color mixture of emission from InGaN∕GaN quantum wells on structure-controlled GaN microfacets
Applied Physics Letters, 2007Co-Authors: Masaya Ueda, Takeshi Kondou, Kouichi Hayashi, Mitsuru Funato, Yoichi Kawakami, Yukio Narukawa, Takashi MukaiAbstract:Altering the mask geometry controls the apparent emission Color from InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes over a wide spectral range, including white. The mask stripes are along the ⟨11¯00⟩ direction and the microfacet structure is composed of the (0001) and {112¯2} planes. With a large occupancy of the mask opening within a period, both facets simultaneously appear and emit different Colors. For example, the {112¯2} facet QWs emit blue and the (0001) facet QWs emit green. On the other hand, with a small occupancy of the mask opening, the {112¯2} facets become dominant and a greenish-blue light is emitted. To synthesize these spectra, the mask patterns are designed so that two different microfacet structures are included within a period. Hence, the macroscopically observed emission Color, which depends on the pattern design, can change from green to purple through white due to the Additive Color mixture.
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Tailored emission Color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors
Applied Physics Letters, 2006Co-Authors: Mitsuru Funato, Takeshi Kondou, Yoichi Kawakami, Yukio Narukawa, Teruhisa Kotani, Takashi MukaiAbstract:A Color synthesis based on InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes is demonstrated. The microfacet structure is composed of (0001), {112¯2}, and {112¯0} planes, and the InGaN well thickness and composition are spatially inhomogeneous due to the diffusion of the adatoms among the facets. These properties allow microfacet QWs, which, for example, emit yellow from the (0001) facet and blue from the {112¯2} facet, to be fabricated, of which the luminescence appears white due to the Additive Color mixing. Using a mask pattern that consists of regions with and without stripes, the emissions from the microfacet QWs and from planar QWs are synthesized to produce the desired apparent output Colors.
Yoichi Kawakami - One of the best experts on this subject based on the ideXlab platform.
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Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting
Applied Physics Express, 2008Co-Authors: Mitsuru Funato, Masaya Ueda, Takeshi Kondou, Yoichi Kawakami, Yukio Narukawa, Keita Hayashi, Shotaro Nishiura, Takashi MukaiAbstract:Monolithic polychromatic light-emitting diodes (LEDs) based on micro-structured InGaN/GaN quantum wells are demonstrated. The microstructure is created through regrowth on SiO2 mask stripes along the [1100] direction and consists of (0001) and {1122} facets. The LEDs exhibit polychromatic emission, including white, due to the Additive Color mixture of facet-dependent emission Colors. Altering the growth conditions and mask geometry easily controls the apparent emission Color. Furthermore, simulations predict high light extraction efficiencies due to their three-dimensional structures. Those observations suggest that the proposed phosphor-free LEDs may lead to highly efficient solid-state lighting in which the Color spectra of light sources are synthesized to satisfy specific requirements for illuminations.
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Additive Color mixture of emission from ingan gan quantum wells on structure controlled gan microfacets
Applied Physics Letters, 2007Co-Authors: Masaya Ueda, Takeshi Kondou, Kouichi Hayashi, Mitsuru Funato, Yoichi Kawakami, Yukio Narukawa, Takashi MukaiAbstract:Altering the mask geometry controls the apparent emission Color from InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes over a wide spectral range, including white. The mask stripes are along the ⟨11¯00⟩ direction and the microfacet structure is composed of the (0001) and {112¯2} planes. With a large occupancy of the mask opening within a period, both facets simultaneously appear and emit different Colors. For example, the {112¯2} facet QWs emit blue and the (0001) facet QWs emit green. On the other hand, with a small occupancy of the mask opening, the {112¯2} facets become dominant and a greenish-blue light is emitted. To synthesize these spectra, the mask patterns are designed so that two different microfacet structures are included within a period. Hence, the macroscopically observed emission Color, which depends on the pattern design, can change from green to purple through white due to the Additive Color mixture.
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Additive Color mixture of emission from InGaN∕GaN quantum wells on structure-controlled GaN microfacets
Applied Physics Letters, 2007Co-Authors: Masaya Ueda, Takeshi Kondou, Kouichi Hayashi, Mitsuru Funato, Yoichi Kawakami, Yukio Narukawa, Takashi MukaiAbstract:Altering the mask geometry controls the apparent emission Color from InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes over a wide spectral range, including white. The mask stripes are along the ⟨11¯00⟩ direction and the microfacet structure is composed of the (0001) and {112¯2} planes. With a large occupancy of the mask opening within a period, both facets simultaneously appear and emit different Colors. For example, the {112¯2} facet QWs emit blue and the (0001) facet QWs emit green. On the other hand, with a small occupancy of the mask opening, the {112¯2} facets become dominant and a greenish-blue light is emitted. To synthesize these spectra, the mask patterns are designed so that two different microfacet structures are included within a period. Hence, the macroscopically observed emission Color, which depends on the pattern design, can change from green to purple through white due to the Additive Color mixture.
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Tailored emission Color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors
Applied Physics Letters, 2006Co-Authors: Mitsuru Funato, Takeshi Kondou, Yoichi Kawakami, Yukio Narukawa, Teruhisa Kotani, Takashi MukaiAbstract:A Color synthesis based on InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes is demonstrated. The microfacet structure is composed of (0001), {112¯2}, and {112¯0} planes, and the InGaN well thickness and composition are spatially inhomogeneous due to the diffusion of the adatoms among the facets. These properties allow microfacet QWs, which, for example, emit yellow from the (0001) facet and blue from the {112¯2} facet, to be fabricated, of which the luminescence appears white due to the Additive Color mixing. Using a mask pattern that consists of regions with and without stripes, the emissions from the microfacet QWs and from planar QWs are synthesized to produce the desired apparent output Colors.
Takeshi Kondou - One of the best experts on this subject based on the ideXlab platform.
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Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting
Applied Physics Express, 2008Co-Authors: Mitsuru Funato, Masaya Ueda, Takeshi Kondou, Yoichi Kawakami, Yukio Narukawa, Keita Hayashi, Shotaro Nishiura, Takashi MukaiAbstract:Monolithic polychromatic light-emitting diodes (LEDs) based on micro-structured InGaN/GaN quantum wells are demonstrated. The microstructure is created through regrowth on SiO2 mask stripes along the [1100] direction and consists of (0001) and {1122} facets. The LEDs exhibit polychromatic emission, including white, due to the Additive Color mixture of facet-dependent emission Colors. Altering the growth conditions and mask geometry easily controls the apparent emission Color. Furthermore, simulations predict high light extraction efficiencies due to their three-dimensional structures. Those observations suggest that the proposed phosphor-free LEDs may lead to highly efficient solid-state lighting in which the Color spectra of light sources are synthesized to satisfy specific requirements for illuminations.
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Additive Color mixture of emission from ingan gan quantum wells on structure controlled gan microfacets
Applied Physics Letters, 2007Co-Authors: Masaya Ueda, Takeshi Kondou, Kouichi Hayashi, Mitsuru Funato, Yoichi Kawakami, Yukio Narukawa, Takashi MukaiAbstract:Altering the mask geometry controls the apparent emission Color from InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes over a wide spectral range, including white. The mask stripes are along the ⟨11¯00⟩ direction and the microfacet structure is composed of the (0001) and {112¯2} planes. With a large occupancy of the mask opening within a period, both facets simultaneously appear and emit different Colors. For example, the {112¯2} facet QWs emit blue and the (0001) facet QWs emit green. On the other hand, with a small occupancy of the mask opening, the {112¯2} facets become dominant and a greenish-blue light is emitted. To synthesize these spectra, the mask patterns are designed so that two different microfacet structures are included within a period. Hence, the macroscopically observed emission Color, which depends on the pattern design, can change from green to purple through white due to the Additive Color mixture.
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Additive Color mixture of emission from InGaN∕GaN quantum wells on structure-controlled GaN microfacets
Applied Physics Letters, 2007Co-Authors: Masaya Ueda, Takeshi Kondou, Kouichi Hayashi, Mitsuru Funato, Yoichi Kawakami, Yukio Narukawa, Takashi MukaiAbstract:Altering the mask geometry controls the apparent emission Color from InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes over a wide spectral range, including white. The mask stripes are along the ⟨11¯00⟩ direction and the microfacet structure is composed of the (0001) and {112¯2} planes. With a large occupancy of the mask opening within a period, both facets simultaneously appear and emit different Colors. For example, the {112¯2} facet QWs emit blue and the (0001) facet QWs emit green. On the other hand, with a small occupancy of the mask opening, the {112¯2} facets become dominant and a greenish-blue light is emitted. To synthesize these spectra, the mask patterns are designed so that two different microfacet structures are included within a period. Hence, the macroscopically observed emission Color, which depends on the pattern design, can change from green to purple through white due to the Additive Color mixture.
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Tailored emission Color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors
Applied Physics Letters, 2006Co-Authors: Mitsuru Funato, Takeshi Kondou, Yoichi Kawakami, Yukio Narukawa, Teruhisa Kotani, Takashi MukaiAbstract:A Color synthesis based on InGaN∕GaN quantum wells (QWs) grown on GaN microfacets formed by regrowth on SiO2 mask stripes is demonstrated. The microfacet structure is composed of (0001), {112¯2}, and {112¯0} planes, and the InGaN well thickness and composition are spatially inhomogeneous due to the diffusion of the adatoms among the facets. These properties allow microfacet QWs, which, for example, emit yellow from the (0001) facet and blue from the {112¯2} facet, to be fabricated, of which the luminescence appears white due to the Additive Color mixing. Using a mask pattern that consists of regions with and without stripes, the emissions from the microfacet QWs and from planar QWs are synthesized to produce the desired apparent output Colors.
