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Alkali Silicate

The Experts below are selected from a list of 279 Experts worldwide ranked by ideXlab platform

Shigeru Niki – 1st expert on this subject based on the ideXlab platform

  • flexible cu in ga se2 solar cells fabricated using Alkali Silicate glass thin layers as an Alkali source material
    Journal of Renewable and Sustainable Energy, 2009
    Co-Authors: Shogo Ishizuka, Akimasa Yamada, Paul Fons, Shigeru Niki

    Abstract:

    Flexible Cu(In,Ga)Se2 (CIGS) solar cells were fabricated using AlkaliSilicate glass thin layers (ASTL) as an Alkali source material deposited on various flexible substrates prior to the Mo backcontact layer deposition. Control of univalent Alkali metal incorporation into the CIGS layer with the use of ASTL was demonstrated regardless of the presence of other multivalent metal impurities in ASTL. Dramatic enhancement in cell efficiencies using ASTL was observed though the use of excessively thick ASTL led to a degradation in cell performance. The quantum efficiency curves of CIGS solar cells fabricated using ASTL showed enhanced absorption in the long wavelength region. The photovoltaic performance dependence on a variety of substrate materials is also discussed.

  • efficiency enhancement of cu in ga se2 solar cells fabricated on flexible polyimide substrates using Alkali Silicate glass thin layers
    Applied Physics Express, 2008
    Co-Authors: Shogo Ishizuka, Hiroyuki Hommoto, Nobuaki Kido, Kimikazu Hashimoto, Akimara Yamada, Shigeru Niki

    Abstract:

    Cu(In,Ga)Se2 (CIGS) absorber layers were grown at a maximum substrate temperature of 400 °C on polyimide (PI) films. The PI films were formed by spin-coating on glass substrates. Alkali doping into the CIGS layers was demonstrated using AlkaliSilicate glass thin layers (hereafter called ASTL) deposited on PI films prior to the sputtering of the Mo back contact layer. The quantum efficiency curves of CIGS solar cells fabricated with use of ASTL showed an enhanced absorption in the long wavelength region. Using the ASTL method, the cell efficiency of 14.7% has been demonstrated on PI substrate.

Shogo Ishizuka – 2nd expert on this subject based on the ideXlab platform

  • flexible cu in ga se2 solar cells fabricated using Alkali Silicate glass thin layers as an Alkali source material
    Journal of Renewable and Sustainable Energy, 2009
    Co-Authors: Shogo Ishizuka, Akimasa Yamada, Paul Fons, Shigeru Niki

    Abstract:

    Flexible Cu(In,Ga)Se2 (CIGS) solar cells were fabricated using AlkaliSilicate glass thin layers (ASTL) as an Alkali source material deposited on various flexible substrates prior to the Mo backcontact layer deposition. Control of univalent Alkali metal incorporation into the CIGS layer with the use of ASTL was demonstrated regardless of the presence of other multivalent metal impurities in ASTL. Dramatic enhancement in cell efficiencies using ASTL was observed though the use of excessively thick ASTL led to a degradation in cell performance. The quantum efficiency curves of CIGS solar cells fabricated using ASTL showed enhanced absorption in the long wavelength region. The photovoltaic performance dependence on a variety of substrate materials is also discussed.

  • efficiency enhancement of cu in ga se2 solar cells fabricated on flexible polyimide substrates using Alkali Silicate glass thin layers
    Applied Physics Express, 2008
    Co-Authors: Shogo Ishizuka, Hiroyuki Hommoto, Nobuaki Kido, Kimikazu Hashimoto, Akimara Yamada, Shigeru Niki

    Abstract:

    Cu(In,Ga)Se2 (CIGS) absorber layers were grown at a maximum substrate temperature of 400 °C on polyimide (PI) films. The PI films were formed by spin-coating on glass substrates. Alkali doping into the CIGS layers was demonstrated using AlkaliSilicate glass thin layers (hereafter called ASTL) deposited on PI films prior to the sputtering of the Mo back contact layer. The quantum efficiency curves of CIGS solar cells fabricated with use of ASTL showed an enhanced absorption in the long wavelength region. Using the ASTL method, the cell efficiency of 14.7% has been demonstrated on PI substrate.

Akimara Yamada – 3rd expert on this subject based on the ideXlab platform

  • efficiency enhancement of cu in ga se2 solar cells fabricated on flexible polyimide substrates using Alkali Silicate glass thin layers
    Applied Physics Express, 2008
    Co-Authors: Shogo Ishizuka, Hiroyuki Hommoto, Nobuaki Kido, Kimikazu Hashimoto, Akimara Yamada, Shigeru Niki

    Abstract:

    Cu(In,Ga)Se2 (CIGS) absorber layers were grown at a maximum substrate temperature of 400 °C on polyimide (PI) films. The PI films were formed by spin-coating on glass substrates. Alkali doping into the CIGS layers was demonstrated using AlkaliSilicate glass thin layers (hereafter called ASTL) deposited on PI films prior to the sputtering of the Mo back contact layer. The quantum efficiency curves of CIGS solar cells fabricated with use of ASTL showed an enhanced absorption in the long wavelength region. Using the ASTL method, the cell efficiency of 14.7% has been demonstrated on PI substrate.