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Aluminium Gallium Arsenide

The Experts below are selected from a list of 132 Experts worldwide ranked by ideXlab platform

Yutaka Miyamoto – 1st expert on this subject based on the ideXlab platform

  • Single-source chip-based frequency comb enabling extreme parallel data transmission
    Nature Photonics, 2018
    Co-Authors: Hao Hu, Minhao Pu, Feihong Ye, Kasper Ingerslev, Edson Porto Da Silva, Md. Nooruzzaman, Yoshimichi Amma, Yusuke Sasaki, Takayuki Mizuno, Yutaka Miyamoto

    Abstract:

    The Internet today transmits hundreds of terabits per second, consumes 9% of all electricity worldwide and grows by 20–30% per year^ 1 , 2 . To support capacity demand, massively parallel communication links are installed, not scaling favourably concerning energy consumption. A single frequency comb source may substitute many parallel lasers and improve system energy-efficiency^ 3 , 4 . We present a frequency comb realized by a non-resonant Aluminium–Gallium–Arsenide-on-insulator (AlGaAsOI) nanowaveguide with 66% pump-to-comb conversion efficiency, which is significantly higher than state-of-the-art resonant comb sources. This enables unprecedented high data-rate transmission for chip-based sources, demonstrated using a single-mode 30-core fibre. We show that our frequency comb can carry 661 Tbit s^–1 of data, equivalent to more than the total Internet traffic today. The comb is obtained by seeding the AlGaAsOI chip with 10-GHz picosecond pulses at a low pump power (85 mW), and this scheme is robust to temperature changes, is energy efficient and facilitates future integration with on-chip lasers or amplifiers^ 5 , 6 . By seeding a non-resonant Aluminium–Gallium–Arsenide-on-insulator nanowaveguide with 10-GHz picosecond pulses at a low pump power of 85 mW, a single energy-efficient frequency comb source carrying 661 Tbit s^–1 of data, equivalent to more than the total Internet traffic today, is achieved.

Hao Hu – 2nd expert on this subject based on the ideXlab platform

  • Single-source chip-based frequency comb enabling extreme parallel data transmission
    Nature Photonics, 2018
    Co-Authors: Hao Hu, Minhao Pu, Feihong Ye, Kasper Ingerslev, Edson Porto Da Silva, Md. Nooruzzaman, Yoshimichi Amma, Yusuke Sasaki, Takayuki Mizuno, Yutaka Miyamoto

    Abstract:

    The Internet today transmits hundreds of terabits per second, consumes 9% of all electricity worldwide and grows by 20–30% per year^ 1 , 2 . To support capacity demand, massively parallel communication links are installed, not scaling favourably concerning energy consumption. A single frequency comb source may substitute many parallel lasers and improve system energy-efficiency^ 3 , 4 . We present a frequency comb realized by a non-resonant Aluminium–Gallium–Arsenide-on-insulator (AlGaAsOI) nanowaveguide with 66% pump-to-comb conversion efficiency, which is significantly higher than state-of-the-art resonant comb sources. This enables unprecedented high data-rate transmission for chip-based sources, demonstrated using a single-mode 30-core fibre. We show that our frequency comb can carry 661 Tbit s^–1 of data, equivalent to more than the total Internet traffic today. The comb is obtained by seeding the AlGaAsOI chip with 10-GHz picosecond pulses at a low pump power (85 mW), and this scheme is robust to temperature changes, is energy efficient and facilitates future integration with on-chip lasers or amplifiers^ 5 , 6 . By seeding a non-resonant Aluminium–Gallium–Arsenide-on-insulator nanowaveguide with 10-GHz picosecond pulses at a low pump power of 85 mW, a single energy-efficient frequency comb source carrying 661 Tbit s^–1 of data, equivalent to more than the total Internet traffic today, is achieved.

  • Single-source chip-based frequency comb enabling extreme parallel data transmission
    Nature Photonics, 2018
    Co-Authors: Hao Hu, Minhao Pu, Feihong Ye, Kasper Ingerslev, Yoshimichi Amma, Yusuke Sasaki, Edson Porto Da Silva, Nooruzzaman, Takayuki Mizuno

    Abstract:

    The Internet today transmits hundreds of terabits per second, consumes 9% of all electricity worldwide and grows by 20–30% per year1,2. To support capacity demand, massively parallel communication links are installed, not scaling favourably concerning energy consumption. A single frequency comb source may substitute many parallel lasers and improve system energy-efficiency3,4. We present a frequency comb realized by a non-resonant Aluminium–Gallium–Arsenide-on-insulator (AlGaAsOI) nanowaveguide with 66% pump-to-comb conversion efficiency, which is significantly higher than state-of-the-art resonant comb sources. This enables unprecedented high data-rate transmission for chip-based sources, demonstrated using a single-mode 30-core fibre. We show that our frequency comb can carry 661 Tbit s–1 of data, equivalent to more than the total Internet traffic today. The comb is obtained by seeding the AlGaAsOI chip with 10-GHz picosecond pulses at a low pump power (85 mW), and this scheme is robust to temperature changes, is energy efficient and facilitates future integration with on-chip lasers or amplifiers5,6.

  • An ultra-efficient nonlinear platform: AlGaAs-on-insulator
    2016 Progress in Electromagnetic Research Symposium (PIERS), 2016
    Co-Authors: Minhao Pu, Hao Hu, Luisa Ottaviano, Elizaveta Semenova, Leif K. Oxenløwe, Kresten Yvind

    Abstract:

    The combination of nonlinear and integrated photonics enables applications including optical signal processing, multi-wavelength lasers, metrology, spectroscopy, and quantum information science. Silicon-on-insulator (SOI) has emerged as a promising platform [1, 2] due to its high material nonlinearity and its compatibility with the CMOS industry. However, silicon suffers two-photon absorption (TPA) in the telecommunication wavelength band around 1.55 μm, which hampers its applications. Different platforms have been proposed to avoid TPA in the telecom wavelength range such as Si3N4 and Hydex [3]. Though tremendous technological work in those platforms have greatly improved device performances, the relatively low intrinsic material nonlinearities of those materials limit device performances concerning efficiency. Therefore, an integrated nonlinear platform that combines a high material nonlinearity, a high-index contrast as SOI, and low linear and nonlinear losses is highly desired. Aluminium Gallium Arsenide (AlGaAs) was early identified as a promising candidate and even nominated as “the silicon of nonlinear optical material” [4] when operated just below half its bandgap energy. It offers a nonlinear index (n2) on the order of 10-17 W/m2 and a high refractive index (n ≈ 3.3), a large transparency window (from near- to mid-infrared), and the ability to engineer the material bandgap to mitigate TPA [5]. In this presentation, we introduce AlGaAson-insulator (AlGaAsOI) platform which combines both strong nonlinear light-matter interaction induced by high-index contrast layout and the potential to fabricate complex designs similar to what is done in silicon-on-insulator photonics. We demonstrate low loss (~ 1.4 dB/cm) nano-waveguides with an ultra-high nonlinear coefficient (~660W-1m-1) and microring resonators with quality factors on the order of 105 [6]. The large effective nonlinearity of such platform enables efficient nonlinear processes such as high-speed optical signal processing [7], supercontinuum generation, and Kerr frequency comb generation [8]. Moreover, the required operation power for signal generation processes such as optical parametric oscillation in the AlGaAsOI platform is well within the range of standard on-chip light sources. In line with the fast-growing hybrid integration trend to combine different materials in multiple levels on a single CMOS compatible chip, the AlGaAsOI platform is very promising for realizing a compact fully-integrated multi-wavelength light source for high bandwidth optical interconnects.

J.a Griffin – 3rd expert on this subject based on the ideXlab platform

  • a comparative study of the noise performance of Aluminium Gallium Arsenide Gallium Arsenide high electron mobility transistors with and without superconducting gate electrodes
    IEEE Electron Device Letters, 1992
    Co-Authors: L.o.a. Myer, M G Spencer, J.a Griffin

    Abstract:

    The noise performance of an AlGaAs high electron mobility transistor (HEMT) with a 1 mu m vanadium/titanium superconducting gate electrode is compared to an otherwise identical nonsuperconducting titanium gate HEMT. At a frequency of 1 GHz and at a temperature below its critical temperature, the superconducting gate HEMT achieved a noise temperature of 21 K. Under these conditions the HEMT with the Ti gate electrode demonstrated a noise temperature of approximately 70 K. This factor of three reduction in noise temperature is due to the reduced gate resistance of the V/Ti superconducting gate. This is the first demonstration of noise reduction in an HEMT using a low-temperature superconducting gate electrode. >

  • A comparative study of the noise performance of Aluminium–Gallium–Arsenide/Gallium–Arsenide high electron mobility transistors with and without superconducting gate electrodes
    IEEE Electron Device Letters, 1992
    Co-Authors: L.o.a. Myer, M G Spencer, J.a Griffin

    Abstract:

    The noise performance of an AlGaAs high electron mobility transistor (HEMT) with a 1 mu m vanadium/titanium superconducting gate electrode is compared to an otherwise identical nonsuperconducting titanium gate HEMT. At a frequency of 1 GHz and at a temperature below its critical temperature, the superconducting gate HEMT achieved a noise temperature of 21 K. Under these conditions the HEMT with the Ti gate electrode demonstrated a noise temperature of approximately 70 K. This factor of three reduction in noise temperature is due to the reduced gate resistance of the V/Ti superconducting gate. This is the first demonstration of noise reduction in an HEMT using a low-temperature superconducting gate electrode.