The Experts below are selected from a list of 26637 Experts worldwide ranked by ideXlab platform
Jeffrey B Neaton - One of the best experts on this subject based on the ideXlab platform.
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electric field and Strain induced rashba effect in hybrid halide perovskites
Journal of Physical Chemistry Letters, 2016Co-Authors: Linn Leppert, Sebastian E Reyeslillo, Jeffrey B NeatonAbstract:Using first-principles density functional theory calculations, we show how Rashba-type energy band splitting in the hybrid organic–inorganic halide perovskites APbX3 (A = CH3NH3+, CH(NH2)2+, Cs+, and X = I, Br) can be tuned and enhanced with electric fields and Anisotropic Strain. In particular, we demonstrate that the magnitude of the Rashba splitting of tetragonal (CH3NH3)PbI3 grows with increasing macroscopic alignment of the organic cations and electric polarization, indicating appreciable tunability with experimentally feasible applied fields, even at room temperature. Further, we quantify the degree to which this effect can be tuned via chemical substitution at the A and X sites, which alters amplitudes of different polar distortion patterns of the inorganic PbX3 cage that directly impact Rashba splitting. In addition, we predict that polar phases of CsPbI3 and (CH3NH3)PbI3 with R3c symmetry possessing considerable Rashba splitting might be accessible at room temperature via Anisotropic Strain induc...
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electric field and Strain induced rashba effect in hybrid halide perovskites
arXiv: Materials Science, 2016Co-Authors: Linn Leppert, Sebastian E Reyeslillo, Jeffrey B NeatonAbstract:Using first principles density functional theory calculations, we show how Rashba-type energy band splitting in the hybrid organic-inorganic halide perovskites APbX$_3$ (A=CH$_3$NH$_3^+$, CH(NH$_2$)$_2^+$, Cs$^+$ and X=I, Br) can be tuned and enhanced with electric fields and Anisotropic Strain. In particular, we demonstrate that the magnitude of the Rashba splitting of tetragonal (CH$_3$NH$_3$)PbI$_3$ grows with increasing macroscopic alignment of the organic cations and electric polarization, indicating appreciable tunability with experimentally-feasible applied fields, even at room temperature. Further, we quantify the degree to which this effect can be tuned via chemical substitution at the A and X sites, which alters amplitudes of different polar distortion patterns of the inorganic PbX$_3$ cage that directly impact Rashba splitting. In addition, we predict that polar phases of CsPbI$_3$ and (CH$_3$NH$_3$)PbI$_3$ with $R3c$ symmetry possessing considerable Rashba splitting might be accessible at room temperature via Anisotropic Strain induced by epitaxy, even in the absence of electric fields.
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band gap and edge engineering via ferroic distortion and Anisotropic Strain the case of srtio 3
Physical Review Letters, 2011Co-Authors: Robert F Berger, Craig J Fennie, Jeffrey B NeatonAbstract:The effects of ferroic distortion and biaxial Strain on the band gap and band edges of SrTiO(3) are calculated by using density functional theory and many-body perturbation theory. Anisotropic Strains are shown to reduce the gap by breaking degeneracies at the band edges. Ferroic distortions are shown to widen the gap by allowing new band edge orbital mixings. Compressive biaxial Strains raise band edge energies, while tensile Strains lower them. To reduce the SrTiO(3) gap, one must lower the symmetry from cubic while suppressing ferroic distortions. Our calculations indicate that, for engineered orientation of the growth direction along [111], the SrTiO(3) gap can be controllably and considerably reduced at room temperature.
Jirong Sun - One of the best experts on this subject based on the ideXlab platform.
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abnormal percolative transport and colossal electroresistance induced by Anisotropic Strain in 011 pr 0 7 ca 0 6 sr 0 4 0 3 mno 3 pmn pt heterostructure
Scientific Reports, 2015Co-Authors: Yingying Zhao, Ying Zhang, Jing Wang, Hao Kuang, Hongrui Zhang, Yao Liu, Shuanhu Wang, Ming Zhang, Lifu Bao, Jirong SunAbstract:Abnormal percolative transport in inhomogeneous systems has drawn increasing interests due to its deviation from the conventional percolation picture. However, its nature is still ambiguous partly due to the difficulty in obtaining controllable abnormal percolative transport behaviors. Here, we report the first observation of electric-field-controlled abnormal percolative transport in (011)-Pr0.7(Ca0.6Sr0.4)0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructure. By introducing an electric-field-induced in-plane Anisotropic Strain-field in a phase separated PCSMO film, we stimulate a significant inverse thermal hysteresis (~ -17.5 K) and positive colossal electroresistance (~11460%), which is found to be crucially orientation-dependent and completely inconsistent with the well accepted conventional percolation picture. Further investigations reveal that such abnormal inverse hysteresis is strongly related to the preferential formation of ferromagnetic metallic domains caused by in-plane Anisotropic Strain-field. Meanwhile, it is found that the positive colossal electroresistance should be ascribed to the coactions between the Anisotropic Strain and the polarization effect from the poling of the substrate which leads to orientation and bias-polarity dependencies for the colossal electroresistance. This work unambiguously evidences the indispensable role of the Anisotropic Strain-field in driving the abnormal percolative transport and provides a new perspective for well understanding the percolation mechanism in inhomogeneous systems.
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Anisotropic modulation of magnetic properties and the memory effect in a wide band 011 pr 0 7 sr 0 3 mno 3 pmn pt heterostructure
Scientific Reports, 2015Co-Authors: Yingying Zhao, Jing Wang, Hao Kuang, Yao Liu, Jirong Sun, Xixiang Zhang, Baogen ShenAbstract:Memory effect of electric-field control on magnetic behavior in magnetoelectric composite heterostructures has been a topic of interest for a long time. Although the piezoStrain and its transfer across the interface of ferroelectric/ferromagnetic films are known to be important in realizing magnetoelectric coupling, the underlying mechanism for nonvolatile modulation of magnetic behaviors remains a challenge. Here, we report on the electric-field control of magnetic properties in wide-band (011)-Pr0.7Sr0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures. By introducing an electric-field-induced in-plane Anisotropic Strain field during the cooling process from room temperature, we observe an in-plane Anisotropic, nonvolatile modulation of magnetic properties in a wide-band Pr0.7Sr0.3MnO3 film at low temperatures. We attribute this Anisotropic memory effect to the preferential seeding and growth of ferromagnetic (FM) domains under the Anisotropic Strain field. In addition, we find that the Anisotropic, nonvolatile modulation of magnetic properties gradually diminishes as the temperature approaches FM transition, indicating that the nonvolatile memory effect is temperature dependent. By taking into account the competition between thermal energy and the potential barrier of the metastable magnetic state induced by the Anisotropic Strain field, this distinct memory effect is well explained, which provides a promising approach for designing novel electric-writing magnetic memories.
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Anisotropic modulation of magnetic properties and the memory effect in a wide band 011 pr0 7sr0 3mno3 pmn pt heterostructure
Scientific Reports, 2015Co-Authors: Yingying Zhao, Jing Wang, Hao Kuang, Yao Liu, Jirong Sun, Xixiang Zhang, Baogen ShenAbstract:Memory effect of electric-field control on magnetic behavior in magnetoelectric composite heterostructures has been a topic of interest for a long time. Although the piezoStrain and its transfer across the interface of ferroelectric/ferromagnetic films are known to be important in realizing magnetoelectric coupling, the underlying mechanism for nonvolatile modulation of magnetic behaviors remains a challenge. Here, we report on the electric-field control of magnetic properties in wide-band (011)-Pr0.7Sr0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures. By introducing an electric-field-induced in-plane Anisotropic Strain field during the cooling process from room temperature, we observe an in-plane Anisotropic, nonvolatile modulation of magnetic properties in a wide-band Pr0.7Sr0.3MnO3 film at low temperatures. We attribute this Anisotropic memory effect to the preferential seeding and growth of ferromagnetic (FM) domains under the Anisotropic Strain field. In addition, we find that the Anisotropic, nonvolatile modulation of magnetic properties gradually diminishes as the temperature approaches FM transition, indicating that the nonvolatile memory effect is temperature dependent. By taking into account the competition between thermal energy and the potential barrier of the metastable magnetic state induced by the Anisotropic Strain field, this distinct memory effect is well explained, which provides a promising approach for designing novel electric-writing magnetic memories.
Yingying Zhao - One of the best experts on this subject based on the ideXlab platform.
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abnormal percolative transport and colossal electroresistance induced by Anisotropic Strain in 011 pr 0 7 ca 0 6 sr 0 4 0 3 mno 3 pmn pt heterostructure
Scientific Reports, 2015Co-Authors: Yingying Zhao, Ying Zhang, Jing Wang, Hao Kuang, Hongrui Zhang, Yao Liu, Shuanhu Wang, Ming Zhang, Lifu Bao, Jirong SunAbstract:Abnormal percolative transport in inhomogeneous systems has drawn increasing interests due to its deviation from the conventional percolation picture. However, its nature is still ambiguous partly due to the difficulty in obtaining controllable abnormal percolative transport behaviors. Here, we report the first observation of electric-field-controlled abnormal percolative transport in (011)-Pr0.7(Ca0.6Sr0.4)0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructure. By introducing an electric-field-induced in-plane Anisotropic Strain-field in a phase separated PCSMO film, we stimulate a significant inverse thermal hysteresis (~ -17.5 K) and positive colossal electroresistance (~11460%), which is found to be crucially orientation-dependent and completely inconsistent with the well accepted conventional percolation picture. Further investigations reveal that such abnormal inverse hysteresis is strongly related to the preferential formation of ferromagnetic metallic domains caused by in-plane Anisotropic Strain-field. Meanwhile, it is found that the positive colossal electroresistance should be ascribed to the coactions between the Anisotropic Strain and the polarization effect from the poling of the substrate which leads to orientation and bias-polarity dependencies for the colossal electroresistance. This work unambiguously evidences the indispensable role of the Anisotropic Strain-field in driving the abnormal percolative transport and provides a new perspective for well understanding the percolation mechanism in inhomogeneous systems.
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Anisotropic modulation of magnetic properties and the memory effect in a wide band 011 pr 0 7 sr 0 3 mno 3 pmn pt heterostructure
Scientific Reports, 2015Co-Authors: Yingying Zhao, Jing Wang, Hao Kuang, Yao Liu, Jirong Sun, Xixiang Zhang, Baogen ShenAbstract:Memory effect of electric-field control on magnetic behavior in magnetoelectric composite heterostructures has been a topic of interest for a long time. Although the piezoStrain and its transfer across the interface of ferroelectric/ferromagnetic films are known to be important in realizing magnetoelectric coupling, the underlying mechanism for nonvolatile modulation of magnetic behaviors remains a challenge. Here, we report on the electric-field control of magnetic properties in wide-band (011)-Pr0.7Sr0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures. By introducing an electric-field-induced in-plane Anisotropic Strain field during the cooling process from room temperature, we observe an in-plane Anisotropic, nonvolatile modulation of magnetic properties in a wide-band Pr0.7Sr0.3MnO3 film at low temperatures. We attribute this Anisotropic memory effect to the preferential seeding and growth of ferromagnetic (FM) domains under the Anisotropic Strain field. In addition, we find that the Anisotropic, nonvolatile modulation of magnetic properties gradually diminishes as the temperature approaches FM transition, indicating that the nonvolatile memory effect is temperature dependent. By taking into account the competition between thermal energy and the potential barrier of the metastable magnetic state induced by the Anisotropic Strain field, this distinct memory effect is well explained, which provides a promising approach for designing novel electric-writing magnetic memories.
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Anisotropic modulation of magnetic properties and the memory effect in a wide band 011 pr0 7sr0 3mno3 pmn pt heterostructure
Scientific Reports, 2015Co-Authors: Yingying Zhao, Jing Wang, Hao Kuang, Yao Liu, Jirong Sun, Xixiang Zhang, Baogen ShenAbstract:Memory effect of electric-field control on magnetic behavior in magnetoelectric composite heterostructures has been a topic of interest for a long time. Although the piezoStrain and its transfer across the interface of ferroelectric/ferromagnetic films are known to be important in realizing magnetoelectric coupling, the underlying mechanism for nonvolatile modulation of magnetic behaviors remains a challenge. Here, we report on the electric-field control of magnetic properties in wide-band (011)-Pr0.7Sr0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures. By introducing an electric-field-induced in-plane Anisotropic Strain field during the cooling process from room temperature, we observe an in-plane Anisotropic, nonvolatile modulation of magnetic properties in a wide-band Pr0.7Sr0.3MnO3 film at low temperatures. We attribute this Anisotropic memory effect to the preferential seeding and growth of ferromagnetic (FM) domains under the Anisotropic Strain field. In addition, we find that the Anisotropic, nonvolatile modulation of magnetic properties gradually diminishes as the temperature approaches FM transition, indicating that the nonvolatile memory effect is temperature dependent. By taking into account the competition between thermal energy and the potential barrier of the metastable magnetic state induced by the Anisotropic Strain field, this distinct memory effect is well explained, which provides a promising approach for designing novel electric-writing magnetic memories.
Kathryn A Moler - One of the best experts on this subject based on the ideXlab platform.
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micron scale measurements of low Anisotropic Strain response of local t c in sr 2 ruo 4
Physical Review B, 2018Co-Authors: Christopher A Watson, Alexandra S Gibbs, A P Mackenzie, Clifford W Hicks, Kathryn A MolerAbstract:Topological superconductivity is of both fundamental and technological interest as a novel state of matter with potential applications in quantum information processing. Among the most promising materials for exhibiting intrinsic topological superconductivity is Sr${}_{2}$RuO${}_{4}$, which has shown evidence of triplet pairing and time-reversal symmetry breaking. Here, the authors use a scanning SQUID microscope to measure the local change in the critical temperature under application of Anisotropic Strain to test for a linear cusp at small Strains, a key prediction of existing models for the superconducting state. The reported absence of such a cusp conStrains future descriptions of this enigmatic material.
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micron scale measurements of low Anisotropic Strain response of local tc in sr2ruo4
Physical Review B, 2018Co-Authors: Christopher Watson, Alexandra S Gibbs, A P Mackenzie, Clifford W Hicks, Kathryn A MolerAbstract:Strontium ruthenate (Sr$_2$RuO$_4$) is a multiband superconductor that displays evidence of topological superconductivity, although a model of the order parameter that is consistent with all experiments remains elusive. We integrated a piezoelectric-based Strain apparatus with a scanning superconducting quantum interference device (SQUID) microscope to map the diamagnetic response of single-crystal Sr$_2$RuO$_4$ as a function of temperature, uniaxial pressure, and position with micron-scale spatial resolution. We thereby obtained local measurements of the superconducting transition temperature $T_c$ vs. Anisotropic Strain $\epsilon$ with sufficient sensitivity for comparison to theoretical models that assume a uniform $p_x\pm ip_y$ order parameter. We found that $T_c$ varies with position and that the locally measured $T_c$ vs. $\epsilon$ curves are quadratic ($T_c\propto\epsilon^2$), as allowed by the C$_4$ symmetry of the crystal lattice. We did not observe the low-Strain linear cusp ($T_c\propto \left| \epsilon \right|$) that would be expected for a two-component order parameter such as $p_x\pm ip_y$. These results provide new input for models of the order parameter of Sr$_2$RuO$_4$.
Baogen Shen - One of the best experts on this subject based on the ideXlab platform.
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Anisotropic modulation of magnetic properties and the memory effect in a wide band 011 pr 0 7 sr 0 3 mno 3 pmn pt heterostructure
Scientific Reports, 2015Co-Authors: Yingying Zhao, Jing Wang, Hao Kuang, Yao Liu, Jirong Sun, Xixiang Zhang, Baogen ShenAbstract:Memory effect of electric-field control on magnetic behavior in magnetoelectric composite heterostructures has been a topic of interest for a long time. Although the piezoStrain and its transfer across the interface of ferroelectric/ferromagnetic films are known to be important in realizing magnetoelectric coupling, the underlying mechanism for nonvolatile modulation of magnetic behaviors remains a challenge. Here, we report on the electric-field control of magnetic properties in wide-band (011)-Pr0.7Sr0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures. By introducing an electric-field-induced in-plane Anisotropic Strain field during the cooling process from room temperature, we observe an in-plane Anisotropic, nonvolatile modulation of magnetic properties in a wide-band Pr0.7Sr0.3MnO3 film at low temperatures. We attribute this Anisotropic memory effect to the preferential seeding and growth of ferromagnetic (FM) domains under the Anisotropic Strain field. In addition, we find that the Anisotropic, nonvolatile modulation of magnetic properties gradually diminishes as the temperature approaches FM transition, indicating that the nonvolatile memory effect is temperature dependent. By taking into account the competition between thermal energy and the potential barrier of the metastable magnetic state induced by the Anisotropic Strain field, this distinct memory effect is well explained, which provides a promising approach for designing novel electric-writing magnetic memories.
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Anisotropic modulation of magnetic properties and the memory effect in a wide band 011 pr0 7sr0 3mno3 pmn pt heterostructure
Scientific Reports, 2015Co-Authors: Yingying Zhao, Jing Wang, Hao Kuang, Yao Liu, Jirong Sun, Xixiang Zhang, Baogen ShenAbstract:Memory effect of electric-field control on magnetic behavior in magnetoelectric composite heterostructures has been a topic of interest for a long time. Although the piezoStrain and its transfer across the interface of ferroelectric/ferromagnetic films are known to be important in realizing magnetoelectric coupling, the underlying mechanism for nonvolatile modulation of magnetic behaviors remains a challenge. Here, we report on the electric-field control of magnetic properties in wide-band (011)-Pr0.7Sr0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures. By introducing an electric-field-induced in-plane Anisotropic Strain field during the cooling process from room temperature, we observe an in-plane Anisotropic, nonvolatile modulation of magnetic properties in a wide-band Pr0.7Sr0.3MnO3 film at low temperatures. We attribute this Anisotropic memory effect to the preferential seeding and growth of ferromagnetic (FM) domains under the Anisotropic Strain field. In addition, we find that the Anisotropic, nonvolatile modulation of magnetic properties gradually diminishes as the temperature approaches FM transition, indicating that the nonvolatile memory effect is temperature dependent. By taking into account the competition between thermal energy and the potential barrier of the metastable magnetic state induced by the Anisotropic Strain field, this distinct memory effect is well explained, which provides a promising approach for designing novel electric-writing magnetic memories.