Anode Dimension - Explore the Science & Experts | ideXlab

Scan Science and Technology

Contact Leading Edge Experts & Companies

Anode Dimension

The Experts below are selected from a list of 810 Experts worldwide ranked by ideXlab platform

Anode Dimension – Free Register to Access Experts & Abstracts

Stefaan Decoutere – One of the best experts on this subject based on the ideXlab platform.

  • algan gan power schottky diodes with Anode Dimension up to 100 mm on 200 mm si substrate
    International Symposium on Power Semiconductor Devices and IC's, 2016
    Co-Authors: Silvia Lenci, Nicolo Ronchi, Stefaan Decoutere

    Abstract:

    This work reports on Au-free AlGaN/GaN lateral Schottky diodes on 200 mm Si substrate, with both optimized DC and dynamic characteristics and Anode width ranging from 100 μm until 100 mm. 100 mm-wide diodes show low leakage (within 1 μΑ/mm at Anode-cathode voltage Vac = −200V) and low on-state voltage (i.e., Vac at 100 mA/mm forward current) within 1.35 V. Reduced current collapse is achieved by in-situ N2 plasma clean in combination with an in-situ SI3N4 capping layer.

  • AlGaN/GaN power schottky diodes with Anode Dimension up to 100 mm on 200 mm Si substrate
    2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016
    Co-Authors: Silvia Lenci, Nicolo Ronchi, Stefaan Decoutere

    Abstract:

    This work reports on Au-free AlGaN/GaN lateral Schottky diodes on 200 mm Si substrate, with both optimized DC and dynamic characteristics and Anode width ranging from 100 μm until 100 mm. 100 mm-wide diodes show low leakage (within 1 μΑ/mm at Anode-cathode voltage Vac = −200V) and low on-state voltage (i.e., Vac at 100 mA/mm forward current) within 1.35 V. Reduced current collapse is achieved by in-situ N2 plasma clean in combination with an in-situ SI3N4 capping layer.

Silvia Lenci – One of the best experts on this subject based on the ideXlab platform.

  • algan gan power schottky diodes with Anode Dimension up to 100 mm on 200 mm si substrate
    International Symposium on Power Semiconductor Devices and IC's, 2016
    Co-Authors: Silvia Lenci, Nicolo Ronchi, Stefaan Decoutere

    Abstract:

    This work reports on Au-free AlGaN/GaN lateral Schottky diodes on 200 mm Si substrate, with both optimized DC and dynamic characteristics and Anode width ranging from 100 μm until 100 mm. 100 mm-wide diodes show low leakage (within 1 μΑ/mm at Anode-cathode voltage Vac = −200V) and low on-state voltage (i.e., Vac at 100 mA/mm forward current) within 1.35 V. Reduced current collapse is achieved by in-situ N2 plasma clean in combination with an in-situ SI3N4 capping layer.

  • AlGaN/GaN power schottky diodes with Anode Dimension up to 100 mm on 200 mm Si substrate
    2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016
    Co-Authors: Silvia Lenci, Nicolo Ronchi, Stefaan Decoutere

    Abstract:

    This work reports on Au-free AlGaN/GaN lateral Schottky diodes on 200 mm Si substrate, with both optimized DC and dynamic characteristics and Anode width ranging from 100 μm until 100 mm. 100 mm-wide diodes show low leakage (within 1 μΑ/mm at Anode-cathode voltage Vac = −200V) and low on-state voltage (i.e., Vac at 100 mA/mm forward current) within 1.35 V. Reduced current collapse is achieved by in-situ N2 plasma clean in combination with an in-situ SI3N4 capping layer.

Nicolo Ronchi – One of the best experts on this subject based on the ideXlab platform.

  • algan gan power schottky diodes with Anode Dimension up to 100 mm on 200 mm si substrate
    International Symposium on Power Semiconductor Devices and IC's, 2016
    Co-Authors: Silvia Lenci, Nicolo Ronchi, Stefaan Decoutere

    Abstract:

    This work reports on Au-free AlGaN/GaN lateral Schottky diodes on 200 mm Si substrate, with both optimized DC and dynamic characteristics and Anode width ranging from 100 μm until 100 mm. 100 mm-wide diodes show low leakage (within 1 μΑ/mm at Anode-cathode voltage Vac = −200V) and low on-state voltage (i.e., Vac at 100 mA/mm forward current) within 1.35 V. Reduced current collapse is achieved by in-situ N2 plasma clean in combination with an in-situ SI3N4 capping layer.

  • AlGaN/GaN power schottky diodes with Anode Dimension up to 100 mm on 200 mm Si substrate
    2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016
    Co-Authors: Silvia Lenci, Nicolo Ronchi, Stefaan Decoutere

    Abstract:

    This work reports on Au-free AlGaN/GaN lateral Schottky diodes on 200 mm Si substrate, with both optimized DC and dynamic characteristics and Anode width ranging from 100 μm until 100 mm. 100 mm-wide diodes show low leakage (within 1 μΑ/mm at Anode-cathode voltage Vac = −200V) and low on-state voltage (i.e., Vac at 100 mA/mm forward current) within 1.35 V. Reduced current collapse is achieved by in-situ N2 plasma clean in combination with an in-situ SI3N4 capping layer.