The Experts below are selected from a list of 810 Experts worldwide ranked by ideXlab platform
Stefaan Decoutere - One of the best experts on this subject based on the ideXlab platform.
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algan gan power schottky diodes with Anode Dimension up to 100 mm on 200 mm si substrate
International Symposium on Power Semiconductor Devices and IC's, 2016Co-Authors: Silvia Lenci, Nicolo Ronchi, Stefaan DecoutereAbstract:This work reports on Au-free AlGaN/GaN lateral Schottky diodes on 200 mm Si substrate, with both optimized DC and dynamic characteristics and Anode width ranging from 100 μm until 100 mm. 100 mm-wide diodes show low leakage (within 1 μΑ/mm at Anode-cathode voltage Vac = −200V) and low on-state voltage (i.e., Vac at 100 mA/mm forward current) within 1.35 V. Reduced current collapse is achieved by in-situ N2 plasma clean in combination with an in-situ SI3N4 capping layer.
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AlGaN/GaN power schottky diodes with Anode Dimension up to 100 mm on 200 mm Si substrate
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016Co-Authors: Silvia Lenci, Nicolo Ronchi, Stefaan DecoutereAbstract:This work reports on Au-free AlGaN/GaN lateral Schottky diodes on 200 mm Si substrate, with both optimized DC and dynamic characteristics and Anode width ranging from 100 μm until 100 mm. 100 mm-wide diodes show low leakage (within 1 μΑ/mm at Anode-cathode voltage Vac = −200V) and low on-state voltage (i.e., Vac at 100 mA/mm forward current) within 1.35 V. Reduced current collapse is achieved by in-situ N2 plasma clean in combination with an in-situ SI3N4 capping layer.
Silvia Lenci - One of the best experts on this subject based on the ideXlab platform.
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algan gan power schottky diodes with Anode Dimension up to 100 mm on 200 mm si substrate
International Symposium on Power Semiconductor Devices and IC's, 2016Co-Authors: Silvia Lenci, Nicolo Ronchi, Stefaan DecoutereAbstract:This work reports on Au-free AlGaN/GaN lateral Schottky diodes on 200 mm Si substrate, with both optimized DC and dynamic characteristics and Anode width ranging from 100 μm until 100 mm. 100 mm-wide diodes show low leakage (within 1 μΑ/mm at Anode-cathode voltage Vac = −200V) and low on-state voltage (i.e., Vac at 100 mA/mm forward current) within 1.35 V. Reduced current collapse is achieved by in-situ N2 plasma clean in combination with an in-situ SI3N4 capping layer.
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AlGaN/GaN power schottky diodes with Anode Dimension up to 100 mm on 200 mm Si substrate
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016Co-Authors: Silvia Lenci, Nicolo Ronchi, Stefaan DecoutereAbstract:This work reports on Au-free AlGaN/GaN lateral Schottky diodes on 200 mm Si substrate, with both optimized DC and dynamic characteristics and Anode width ranging from 100 μm until 100 mm. 100 mm-wide diodes show low leakage (within 1 μΑ/mm at Anode-cathode voltage Vac = −200V) and low on-state voltage (i.e., Vac at 100 mA/mm forward current) within 1.35 V. Reduced current collapse is achieved by in-situ N2 plasma clean in combination with an in-situ SI3N4 capping layer.
Nicolo Ronchi - One of the best experts on this subject based on the ideXlab platform.
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algan gan power schottky diodes with Anode Dimension up to 100 mm on 200 mm si substrate
International Symposium on Power Semiconductor Devices and IC's, 2016Co-Authors: Silvia Lenci, Nicolo Ronchi, Stefaan DecoutereAbstract:This work reports on Au-free AlGaN/GaN lateral Schottky diodes on 200 mm Si substrate, with both optimized DC and dynamic characteristics and Anode width ranging from 100 μm until 100 mm. 100 mm-wide diodes show low leakage (within 1 μΑ/mm at Anode-cathode voltage Vac = −200V) and low on-state voltage (i.e., Vac at 100 mA/mm forward current) within 1.35 V. Reduced current collapse is achieved by in-situ N2 plasma clean in combination with an in-situ SI3N4 capping layer.
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AlGaN/GaN power schottky diodes with Anode Dimension up to 100 mm on 200 mm Si substrate
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016Co-Authors: Silvia Lenci, Nicolo Ronchi, Stefaan DecoutereAbstract:This work reports on Au-free AlGaN/GaN lateral Schottky diodes on 200 mm Si substrate, with both optimized DC and dynamic characteristics and Anode width ranging from 100 μm until 100 mm. 100 mm-wide diodes show low leakage (within 1 μΑ/mm at Anode-cathode voltage Vac = −200V) and low on-state voltage (i.e., Vac at 100 mA/mm forward current) within 1.35 V. Reduced current collapse is achieved by in-situ N2 plasma clean in combination with an in-situ SI3N4 capping layer.
Qinghua Liu - One of the best experts on this subject based on the ideXlab platform.
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modeling and simulation of a single direct carbon fuel cell
Journal of Power Sources, 2008Co-Authors: Qinghua Liu, Ye Tian, Chun Xia, Levi T Thompson, Bin LiangAbstract:Abstract A mathematical model was developed to simulate the performance of a direct carbon fuel cell. The model takes account of the electrochemical reaction dynamics, mass-transfer and the electrode processes. An improved packed bed Anode was adopted. Polarization losses for the cell components were examined supposing graphite as the fuel and molten carbonate as the electrolyte. The results indicated that the Anode activation polarization was the major potential loss in 923–1023 K. The effects of temperature, Anode Dimension, and carbon particle size on the cell performance were investigated. The model predicted that the power density can be as high as 200–500 W m −2 , with carbon particle size in the range 1.0 × 10 −7 to 1.0 × 10 −4 m and in 923–1023 K and that the overall efficiency of the cell is higher than 55% for low current density and is 45–50% for high current density.
Bin Liang - One of the best experts on this subject based on the ideXlab platform.
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modeling and simulation of a single direct carbon fuel cell
Journal of Power Sources, 2008Co-Authors: Qinghua Liu, Ye Tian, Chun Xia, Levi T Thompson, Bin LiangAbstract:Abstract A mathematical model was developed to simulate the performance of a direct carbon fuel cell. The model takes account of the electrochemical reaction dynamics, mass-transfer and the electrode processes. An improved packed bed Anode was adopted. Polarization losses for the cell components were examined supposing graphite as the fuel and molten carbonate as the electrolyte. The results indicated that the Anode activation polarization was the major potential loss in 923–1023 K. The effects of temperature, Anode Dimension, and carbon particle size on the cell performance were investigated. The model predicted that the power density can be as high as 200–500 W m −2 , with carbon particle size in the range 1.0 × 10 −7 to 1.0 × 10 −4 m and in 923–1023 K and that the overall efficiency of the cell is higher than 55% for low current density and is 45–50% for high current density.