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Antiferromagnetic Material

The Experts below are selected from a list of 141 Experts worldwide ranked by ideXlab platform

Hiroshi Naganuma – 1st expert on this subject based on the ideXlab platform

  • field free spin hall effect driven magnetization switching in pd co irmn exchange coupling system
    Applied Physics Letters, 2016
    Co-Authors: W J Kong, Hiroshi Naganuma, Yang Ji, Xuan Zhang, Hao Wu, Quande Zhang, Z H Yuan, Tian Yu, Kenji Fukuda

    Abstract:

    All electrical manipulation of magnetization is crucial and of great important for spintronics devices for the sake of high speed, reliable operation, and low power consumption. Recently, widespread interests have been aroused to manipulate perpendicular magnetization of a ferromagnetic layer using spin-orbit torque (SOT) without field. We report that a commonly used Antiferromagnetic Material IrMn can be a promising candidate as a functional layer to realize field-free magnetization switching driven by SOT in which IrMn is employed to act as both the source of effective exchange bias field and SOT source. The critical switching current density within our study is Jc = 2.2 × 107 A/cm2, which is the same magnitude as similar Materials such as PtMn. A series of measurements based on anomalous Hall effect was systematically implemented to determine the magnetization switching mechanism. This study offers a possible route for IrMn application in similar structures.

Michael A Seigler – 2nd expert on this subject based on the ideXlab platform

  • Current-in-plane giant magnetoresistance sensor using a thin Cu spacer and dual nano-oxide layers with a DR greater than 20 Ohms/sq
    IEEE Transactions on Magnetics, 2007
    Co-Authors: Michael A Seigler

    Abstract:

    The magnetoresistance (MR) of the current-in-plane spin-valve, which is currently utilized as the readback sensor in the majority of hard disk drives, has reached a maximum MR of DR/Rmin. ∼ 20% and DRsheet ∼ 4 Ω/sq. A new sensor film stack will be introduced here that utilizes a trilayer (CoFe\Cu\CoFe), where the Cu interlayer is very thin (∼10 Å) to enhance the MR and where the Cu thickness is chosen such that the ferromagnetic Neel coupling and the Antiferromagnetic Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling between the CoFe layers partially cancel one another, to maximize the sensitivity. By changing the Cu interlayer thickness, the overall interlayer coupling was adjusted from about -0.05 erg/cm² to -0.4 erg/cm² while keeping the MR large. Nano-oxide layers (NOLs) are also incorporated below and above the trilayer sensor to enhance the MR. An example of this sensor is NiFeCr 20 Å/CoFeO 10 Å/CoFe 15 Å/Cu 10.5 Å/CoFe 15 Å/AIO 30 Å and will be referred to as CIP-3L. With the combination of the thin Cu spacer, the NOLs and minimal additional layers to shunt the current around the trilayer sensor (no Antiferromagnetic Material and no pinned layers), as deposited sheet films with an MR of DR/R > 25 % and DR/sq. > 20 Ω/sq. were achieved. This paper shows the optimization of the sensor stack, such as film thicknesses, NOL Material, and oxidation process, the adjustability of the interlayer exchange coupling between the CoFe layers and also shows the repeatability of the sensor deposition. [ABSTRACT FROM AUTHOR]

  • Current-in-Plane Giant Magnetoresistance Sensor Using a Thin Cu Spacer and Dual Nano-Oxide Layers With a ${\rm DR}$ Greater Than $20$ Ohms/sq.
    IEEE Transactions on Magnetics, 2007
    Co-Authors: Michael A Seigler

    Abstract:

    The magnetoresistance (MR) of the current-in-plane spin-valve, which is currently utilized as the readback sensor in the majority of hard disk drives, has reached a maximum MR of DR/Rmin.~20% and DRsheet~4 Omega/sq. A new sensor film stack will be introduced here that utilizes a trilayer (CoFe\Cu\CoFe) where the Cu interlayer is very thin (~10 Aring) to enhance the MR and where the Cu thickness is chosen such that the ferromagnetic Neel coupling and the Antiferromagnetic Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling between the CoFe layers partially cancel one another, to maximize the sensitivity. By changing the Cu interlayer thickness, the overall interlayer coupling was adjusted from about -0.05 erg/cm2 to -0.4 erg/cm2 while keeping the MR large. Nano-oxide layers (NOLs) are also incorporated below and above the trilayer sensor to enhance the MR. An example of this sensor is NiFeCr 20 Aring/CoFeO 10 Aring/CoFe 15 Aring/Cu 10.5 Aring/CoFe 15 Aring/AlO 30 Aring and will be referred to as CIP-3L. With the combination of the thin Cu spacer, the NOLs and minimal additional layers to shunt the current around the trilayer sensor (no Antiferromagnetic Material and no pinned layers), as deposited sheet films with an MR of DR/R >25% and DR/sq. >20 Omega/sq. were achieved. This paper shows the optimization of the sensor stack, such as film thicknesses, NOL Material, and oxidation process, the adjustability of the interlayer exchange coupling between the CoFe layers and also shows the repeatability of the sensor deposition

A. Schuhl – 3rd expert on this subject based on the ideXlab platform

  • Intrinsic thermally compensated field sensor based on single magnetic tunnel junctions
    Applied Physics Letters, 2004
    Co-Authors: Gregory Malinowski, Michel Hehn, François Montaigne, E. Jouguelet, A. Schuhl

    Abstract:

    The association of an Antiferromagnetic Material with a ferromagnetic Material in an exchange coupled bilayer is used as a detection layer in a tunnel magnetoresistive sensor. The magnetic response is shown to be reversible and linear depending on the field range to be measured. Both tunnel magnetoresistance and exchange field decrease linearly with the temperature and lead to temperature independent sensor sensibility.

  • Using Antiferromagnetic/ferromagnetic bilayers as detection layers in magnetic tunnel junctions
    Applied Physics Letters, 2003
    Co-Authors: Gregory Malinowski, Michel Hehn, François Montaigne, E. Jouguelet, M. Sajieddine, F. Canet, Marc Alnot, Daniel Lacour, A. Schuhl

    Abstract:

    It is shown that the association of an Antiferromagnetic Material with a ferromagnetic Material in an exchange-coupled bilayer, often used in spintronic devices as a magnetic reference or pinned system, can be used as a detection layer in magnetoresistive sensors. The magnetic response is shown to be reversible and linear in an adjustable field window. The sensitivity is studied as a function of temperature.