The Experts below are selected from a list of 288 Experts worldwide ranked by ideXlab platform
Zhanaphia Kurenbaeva - One of the best experts on this subject based on the ideXlab platform.
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Antiferromagnetic Ordering in an intermediate valence compound ce9ru4ga5
ChemInform, 2013Co-Authors: D Kaczorowski, E V Murashova, Zhanaphia KurenbaevaAbstract:The novel Ce9Ru4Ga5 is prepared by arc melting and shows an unusually short Ce—Ru distance in its structure.
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Antiferromagnetic Ordering in an intermediate valence compound ce9ru4ga5
Journal of Alloys and Compounds, 2013Co-Authors: D Kaczorowski, E V Murashova, Zhanaphia KurenbaevaAbstract:Abstract We report on the low-temperature physical behavior in a novel compound Ce 9 Ru 4 Ga 5 that crystallizes with its own type of crystal structure containing an anomalously short Ce–Ru distance. From the X-ray absorption spectroscopy data the compound was characterized as an intermediate valence system. Our bulk property (magnetic susceptibility, heat capacity and electrical resistivity) measurements revealed an Antiferromagnetic Ordering below T N = 3.7 K. The long-range magnetic order probably arises due to a fraction of Ce ions (nearly one third of cerium in the unit cell of Ce 9 Ru 4 Ga 5 ), which possess nearly stable 4f 1 configuration with the effective valence close to 3+.
Haiyan Wang - One of the best experts on this subject based on the ideXlab platform.
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superconducting properties of fesexte1 x thin film with a composition close to Antiferromagnetic Ordering
Superconductor Science and Technology, 2013Co-Authors: Li Chen, Jijie Huang, Chenfong Tsai, Yuanyuan Zhu, Jie Jian, Aiping Chen, Fauzia Khatkhatay, Nicholas Cornell, Anvar A Zakhidov, Haiyan WangAbstract:In this study Te-rich iron chalcogenide (FeSexTe1−x) thin films with a composition close to Antiferromagnetic Ordering have been deposited on SrTiO3 (STO) substrates. The superconducting critical transition temperature (Tc) of the FeSe0.1Te0.9 thin film on STO substrate ranges from ∼12.5 to ∼13.3 K. The upper critical field is as high as 114 T, which is much higher than that of the FeSe0.5Te0.5 thin film on STO substrate (∼49 T). The self-field critical current density () at 2 K of 1.8 × 105 A cm−2 is much higher than that of the FeSe0.5Te0.5 thin film, and the FeSe0.1Te0.9 thin film also demonstrates superior pinning properties under applied magnetic field. Compared to FeSe0.5Te0.5, which was considered as the optimum composition, FeSe0.1Te0.9 presents even more promise for high field applications because of its high upper critical field and high critical current density.
Zhidong Zhang - One of the best experts on this subject based on the ideXlab platform.
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single orthorhombic b axis orientation and Antiferromagnetic Ordering type in multiferroic camno3 thin film with la0 67ca0 33mno3 buffer layer
Applied Physics Letters, 2017Co-Authors: Fei Wang, Bin Dong, Yuelong Zhang, Hong Zhang, S K Li, Teng Yang, Zhan Jie Wang, Zhidong ZhangAbstract:The detailed crystal structure and Antiferromagnetic properties of a 42 nm thick CaMnO3 film grown on a LaAlO3 substrate with a 9 nm La0.67Ca0.33MnO3 buffer layer have been investigated. Compared with a CaMnO3 film directly grown on a LaAlO3 substrate, only one kind of orthorhombic b axis orientation along the [100] axis of the substrate is observed in the CaMnO3 film with a La0.67Ca0.33MnO3 buffer layer. To determine the Antiferromagnetic Ordering type of our CaMnO3 film with a buffer layer, the first-principles calculations were carried out with the results, indicating that the CaMnO3 film, even under a tensile strain of 1.9%, is still a compensated G-type Antiferromagnetic order, the same as the bulk. Moreover, the exchange bias effect is observed at the interface of the CaMnO3/La0.67Ca0.33MnO3 film, further confirming the Antiferromagnetic Ordering of the CaMnO3 film with a buffer layer. In addition, it is concluded that the exchange bias effect originates from the spin glass state at the La0.67Ca0.33...
D Kaczorowski - One of the best experts on this subject based on the ideXlab platform.
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Antiferromagnetic Ordering in an intermediate valence compound ce9ru4ga5
ChemInform, 2013Co-Authors: D Kaczorowski, E V Murashova, Zhanaphia KurenbaevaAbstract:The novel Ce9Ru4Ga5 is prepared by arc melting and shows an unusually short Ce—Ru distance in its structure.
-
Antiferromagnetic Ordering in an intermediate valence compound ce9ru4ga5
Journal of Alloys and Compounds, 2013Co-Authors: D Kaczorowski, E V Murashova, Zhanaphia KurenbaevaAbstract:Abstract We report on the low-temperature physical behavior in a novel compound Ce 9 Ru 4 Ga 5 that crystallizes with its own type of crystal structure containing an anomalously short Ce–Ru distance. From the X-ray absorption spectroscopy data the compound was characterized as an intermediate valence system. Our bulk property (magnetic susceptibility, heat capacity and electrical resistivity) measurements revealed an Antiferromagnetic Ordering below T N = 3.7 K. The long-range magnetic order probably arises due to a fraction of Ce ions (nearly one third of cerium in the unit cell of Ce 9 Ru 4 Ga 5 ), which possess nearly stable 4f 1 configuration with the effective valence close to 3+.
Li Chen - One of the best experts on this subject based on the ideXlab platform.
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superconducting properties of fesexte1 x thin film with a composition close to Antiferromagnetic Ordering
Superconductor Science and Technology, 2013Co-Authors: Li Chen, Jijie Huang, Chenfong Tsai, Yuanyuan Zhu, Jie Jian, Aiping Chen, Fauzia Khatkhatay, Nicholas Cornell, Anvar A Zakhidov, Haiyan WangAbstract:In this study Te-rich iron chalcogenide (FeSexTe1−x) thin films with a composition close to Antiferromagnetic Ordering have been deposited on SrTiO3 (STO) substrates. The superconducting critical transition temperature (Tc) of the FeSe0.1Te0.9 thin film on STO substrate ranges from ∼12.5 to ∼13.3 K. The upper critical field is as high as 114 T, which is much higher than that of the FeSe0.5Te0.5 thin film on STO substrate (∼49 T). The self-field critical current density () at 2 K of 1.8 × 105 A cm−2 is much higher than that of the FeSe0.5Te0.5 thin film, and the FeSe0.1Te0.9 thin film also demonstrates superior pinning properties under applied magnetic field. Compared to FeSe0.5Te0.5, which was considered as the optimum composition, FeSe0.1Te0.9 presents even more promise for high field applications because of its high upper critical field and high critical current density.