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Mehmet Ari - One of the best experts on this subject based on the ideXlab platform.
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chAracterization of chemically deposited znse sno2 glass films influence of annealing in Ar Atmosphere on physical properties
Applied Surface Science, 2011Co-Authors: H. Metin, S. Durmuş, Selma Erat, Mehmet AriAbstract:Abstract The Zinc Selenide (ZnSe) thin films have been deposited on SnO 2 /glass substrates by a simple and inexpensive chemical bath deposition (CBD). The structural, optical and electrical properties of ZnSe films have been chAracterized by X-ray diffraction (XRD), Energy Dispersive X-ray Analysis (EDAX), optical absorption spectroscopy, and four point probe techniques, respectively. The films have been subjected to different annealing temperature in Argon (Ar) Atmosphere. An increase in annealing temperature does not cause a complete phase transformation whereas it affects the crystallite size, dislocation density and strain. The optical band gap ( E g ) of the as-deposited film is estimated to be 3.08 eV and decreases with increasing annealing temperature down to 2.43 eV at 773 K. The as-deposited and annealed films show typical semiconducting behaviour, d ρ /d T > 0. Interestingly, the films annealed at 373 K, 473 K, and 573 K show two distinct temperature dependent regions of electrical resistivity; exponential region at high temperature, lineAr region at low temperature. The temperature at which the transition takes place from exponential to lineAr region strongly depends on the annealing temperature.
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ChAracterization of chemically deposited ZnSe/SnO2/glass films: Influence of annealing in Ar Atmosphere on physical properties
Applied Surface Science, 2011Co-Authors: H. Metin, S. Durmuş, Selma Erat, Mehmet AriAbstract:Abstract The Zinc Selenide (ZnSe) thin films have been deposited on SnO 2 /glass substrates by a simple and inexpensive chemical bath deposition (CBD). The structural, optical and electrical properties of ZnSe films have been chAracterized by X-ray diffraction (XRD), Energy Dispersive X-ray Analysis (EDAX), optical absorption spectroscopy, and four point probe techniques, respectively. The films have been subjected to different annealing temperature in Argon (Ar) Atmosphere. An increase in annealing temperature does not cause a complete phase transformation whereas it affects the crystallite size, dislocation density and strain. The optical band gap ( E g ) of the as-deposited film is estimated to be 3.08 eV and decreases with increasing annealing temperature down to 2.43 eV at 773 K. The as-deposited and annealed films show typical semiconducting behaviour, d ρ /d T > 0. Interestingly, the films annealed at 373 K, 473 K, and 573 K show two distinct temperature dependent regions of electrical resistivity; exponential region at high temperature, lineAr region at low temperature. The temperature at which the transition takes place from exponential to lineAr region strongly depends on the annealing temperature.
H. Metin - One of the best experts on this subject based on the ideXlab platform.
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chAracterization of chemically deposited znse sno2 glass films influence of annealing in Ar Atmosphere on physical properties
Applied Surface Science, 2011Co-Authors: H. Metin, S. Durmuş, Selma Erat, Mehmet AriAbstract:Abstract The Zinc Selenide (ZnSe) thin films have been deposited on SnO 2 /glass substrates by a simple and inexpensive chemical bath deposition (CBD). The structural, optical and electrical properties of ZnSe films have been chAracterized by X-ray diffraction (XRD), Energy Dispersive X-ray Analysis (EDAX), optical absorption spectroscopy, and four point probe techniques, respectively. The films have been subjected to different annealing temperature in Argon (Ar) Atmosphere. An increase in annealing temperature does not cause a complete phase transformation whereas it affects the crystallite size, dislocation density and strain. The optical band gap ( E g ) of the as-deposited film is estimated to be 3.08 eV and decreases with increasing annealing temperature down to 2.43 eV at 773 K. The as-deposited and annealed films show typical semiconducting behaviour, d ρ /d T > 0. Interestingly, the films annealed at 373 K, 473 K, and 573 K show two distinct temperature dependent regions of electrical resistivity; exponential region at high temperature, lineAr region at low temperature. The temperature at which the transition takes place from exponential to lineAr region strongly depends on the annealing temperature.
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ChAracterization of chemically deposited ZnSe/SnO2/glass films: Influence of annealing in Ar Atmosphere on physical properties
Applied Surface Science, 2011Co-Authors: H. Metin, S. Durmuş, Selma Erat, Mehmet AriAbstract:Abstract The Zinc Selenide (ZnSe) thin films have been deposited on SnO 2 /glass substrates by a simple and inexpensive chemical bath deposition (CBD). The structural, optical and electrical properties of ZnSe films have been chAracterized by X-ray diffraction (XRD), Energy Dispersive X-ray Analysis (EDAX), optical absorption spectroscopy, and four point probe techniques, respectively. The films have been subjected to different annealing temperature in Argon (Ar) Atmosphere. An increase in annealing temperature does not cause a complete phase transformation whereas it affects the crystallite size, dislocation density and strain. The optical band gap ( E g ) of the as-deposited film is estimated to be 3.08 eV and decreases with increasing annealing temperature down to 2.43 eV at 773 K. The as-deposited and annealed films show typical semiconducting behaviour, d ρ /d T > 0. Interestingly, the films annealed at 373 K, 473 K, and 573 K show two distinct temperature dependent regions of electrical resistivity; exponential region at high temperature, lineAr region at low temperature. The temperature at which the transition takes place from exponential to lineAr region strongly depends on the annealing temperature.
Katsumi Yoshino - One of the best experts on this subject based on the ideXlab platform.
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PrepAration of Ferromagnetic Organic Compounds by Pyrolysis of (2,4,6-Triphenoxy-1,3,5-Triazine/Melamine) in Ar Atmosphere Including a Trace of Dry Air
Japanese Journal of Applied Physics, 1992Co-Authors: Hisashi Araki, Young Bae Roh, Nobuhiro Kuwamura, Katsumi YoshinoAbstract:Organic compound exhibiting strong ferromagnetism (saturation magnetization 10 emuG/g) was prepAred from a mixture of 2,4,6-triphenoxy-1,3,5-triazine (TPTA) and melamine (M) by pyrolysis at 950°C in Ar Atmosphere including a trace of dry air. The electron spin resonance (ESR) signal of this material also exhibited remArkably lArge intensities (4.7×1023 spins/g) and peak-to-peak linewidth (804 G at 290 K or 1570 G at 100 K). The values of linewidth and of g-factor at 290 K Are compArable to those of iron oxide and of iron, respectively.
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prepAration of ferromagnetic organic compounds by pyrolysis of 2 4 6 triphenoxy 1 3 5 triazine melamine in Ar Atmosphere including a trace of dry air
Japanese Journal of Applied Physics, 1992Co-Authors: Hisashi Araki, Young Bae Roh, Nobuhiro Kuwamura, Katsumi YoshinoAbstract:Organic compound exhibiting strong ferromagnetism (saturation magnetization 10 emuG/g) was prepAred from a mixture of 2,4,6-triphenoxy-1,3,5-triazine (TPTA) and melamine (M) by pyrolysis at 950°C in Ar Atmosphere including a trace of dry air. The electron spin resonance (ESR) signal of this material also exhibited remArkably lArge intensities (4.7×1023 spins/g) and peak-to-peak linewidth (804 G at 290 K or 1570 G at 100 K). The values of linewidth and of g-factor at 290 K Are compArable to those of iron oxide and of iron, respectively.
Ichiro Yonenaga - One of the best experts on this subject based on the ideXlab platform.
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single crystal growth of langataite la3ta0 5ga5 5o14 by vertical bridgman vb method along 2 1 1 0 in air and in an Ar Atmosphere
Journal of Crystal Growth, 2008Co-Authors: Toshinori Taishi, Keigo Hoshikawa, Noriko Bamba, Ichiro YonenagaAbstract:Abstract Piezoelectric langataite (La3Ta0.5Ga5.5O14: LTG) single crystals were grown along [2 1¯ 1¯ 0] (X-axis) by the vertical Bridgman (VB) method in air or in an Ar Atmosphere. Using two kinds of raw materials, one with the stoichiometric composition of LTG and the other with a slightly Ga-rich composition, crack-free LTG single crystals 1 in in diameter were successfully grown both in air and in the Ar Atmosphere. The colors of the crystal grown in air and in the Ar Atmosphere were orange and pale green, respectively, and transpArent in both cases. When the composition of the raw material used was stoichiometric, LaTaO4 was crystallized at the periphery of the crystal along (0 1 1¯ 0) but no other phase crystallization was observed at the end of the crystal. On the other hand, LaGaO3 was crystallized at the end of the crystal when the composition of the raw material was Ga-rich, while LaTaO4 was not observed at the periphery. We suggest that anisotropic segregation of Ta occurs in VB-LTG crystal growth for crystallization of LaTaO4 under a small temperature gradient in the radial direction.
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Single crystal growth of langataite (La3Ta0.5Ga5.5O14) by vertical Bridgman (VB) method along [2 1¯ 1¯0] in air and in an Ar Atmosphere
Journal of Crystal Growth, 2008Co-Authors: Toshinori Taishi, Keigo Hoshikawa, Noriko Bamba, Ichiro YonenagaAbstract:Abstract Piezoelectric langataite (La3Ta0.5Ga5.5O14: LTG) single crystals were grown along [2 1¯ 1¯ 0] (X-axis) by the vertical Bridgman (VB) method in air or in an Ar Atmosphere. Using two kinds of raw materials, one with the stoichiometric composition of LTG and the other with a slightly Ga-rich composition, crack-free LTG single crystals 1 in in diameter were successfully grown both in air and in the Ar Atmosphere. The colors of the crystal grown in air and in the Ar Atmosphere were orange and pale green, respectively, and transpArent in both cases. When the composition of the raw material used was stoichiometric, LaTaO4 was crystallized at the periphery of the crystal along (0 1 1¯ 0) but no other phase crystallization was observed at the end of the crystal. On the other hand, LaGaO3 was crystallized at the end of the crystal when the composition of the raw material was Ga-rich, while LaTaO4 was not observed at the periphery. We suggest that anisotropic segregation of Ta occurs in VB-LTG crystal growth for crystallization of LaTaO4 under a small temperature gradient in the radial direction.
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Single-crystal growth of langasite (La3Ga5SiO14) by the vertical Bridgman (VB) method in air and in an Ar Atmosphere
Journal of Crystal Growth, 2007Co-Authors: Toshinori Taishi, Hayashi Takayuki, Tatsuo Fukami, Keigo Hoshikawa, Ichiro YonenagaAbstract:Abstract Piezoelectric langasite (La 3 Ga 5 SiO 14 , LGS) single crystals were grown by the vertical Bridgman (VB) method in air and in an Ar Atmosphere. In the Ar Atmosphere, a colorless-transpArent crack-free LGS single crystal, 1 in. in diameter, was grown using raw material with a slightly Ga-rich composition, while in air an orange-colored transpArent LGS crystal was grown. Any other phases could not be detected in the crystals, which may suggest that only a few Ga atoms evaporated from the melt during the growth in an Ar Atmosphere. The resistivity of an LGS crystal grown in an Ar Atmosphere was higher than that grown in air.
S. Durmuş - One of the best experts on this subject based on the ideXlab platform.
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chAracterization of chemically deposited znse sno2 glass films influence of annealing in Ar Atmosphere on physical properties
Applied Surface Science, 2011Co-Authors: H. Metin, S. Durmuş, Selma Erat, Mehmet AriAbstract:Abstract The Zinc Selenide (ZnSe) thin films have been deposited on SnO 2 /glass substrates by a simple and inexpensive chemical bath deposition (CBD). The structural, optical and electrical properties of ZnSe films have been chAracterized by X-ray diffraction (XRD), Energy Dispersive X-ray Analysis (EDAX), optical absorption spectroscopy, and four point probe techniques, respectively. The films have been subjected to different annealing temperature in Argon (Ar) Atmosphere. An increase in annealing temperature does not cause a complete phase transformation whereas it affects the crystallite size, dislocation density and strain. The optical band gap ( E g ) of the as-deposited film is estimated to be 3.08 eV and decreases with increasing annealing temperature down to 2.43 eV at 773 K. The as-deposited and annealed films show typical semiconducting behaviour, d ρ /d T > 0. Interestingly, the films annealed at 373 K, 473 K, and 573 K show two distinct temperature dependent regions of electrical resistivity; exponential region at high temperature, lineAr region at low temperature. The temperature at which the transition takes place from exponential to lineAr region strongly depends on the annealing temperature.
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ChAracterization of chemically deposited ZnSe/SnO2/glass films: Influence of annealing in Ar Atmosphere on physical properties
Applied Surface Science, 2011Co-Authors: H. Metin, S. Durmuş, Selma Erat, Mehmet AriAbstract:Abstract The Zinc Selenide (ZnSe) thin films have been deposited on SnO 2 /glass substrates by a simple and inexpensive chemical bath deposition (CBD). The structural, optical and electrical properties of ZnSe films have been chAracterized by X-ray diffraction (XRD), Energy Dispersive X-ray Analysis (EDAX), optical absorption spectroscopy, and four point probe techniques, respectively. The films have been subjected to different annealing temperature in Argon (Ar) Atmosphere. An increase in annealing temperature does not cause a complete phase transformation whereas it affects the crystallite size, dislocation density and strain. The optical band gap ( E g ) of the as-deposited film is estimated to be 3.08 eV and decreases with increasing annealing temperature down to 2.43 eV at 773 K. The as-deposited and annealed films show typical semiconducting behaviour, d ρ /d T > 0. Interestingly, the films annealed at 373 K, 473 K, and 573 K show two distinct temperature dependent regions of electrical resistivity; exponential region at high temperature, lineAr region at low temperature. The temperature at which the transition takes place from exponential to lineAr region strongly depends on the annealing temperature.