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Mehmet Ari – One of the best experts on this subject based on the ideXlab platform.

  • chAracterization of chemically deposited znse sno2 glass films influence of annealing in Ar Atmosphere on physical properties
    Applied Surface Science, 2011
    Co-Authors: H. Metin, S. Durmuş, Selma Erat, Mehmet Ari

    Abstract:

    Abstract The Zinc Selenide (ZnSe) thin films have been deposited on SnO 2 /glass substrates by a simple and inexpensive chemical bath deposition (CBD). The structural, optical and electrical properties of ZnSe films have been chAracterized by X-ray diffraction (XRD), Energy Dispersive X-ray Analysis (EDAX), optical absorption spectroscopy, and four point probe techniques, respectively. The films have been subjected to different annealing temperature in Argon (Ar) Atmosphere. An increase in annealing temperature does not cause a complete phase transformation whereas it affects the crystallite size, dislocation density and strain. The optical band gap ( E g ) of the as-deposited film is estimated to be 3.08 eV and decreases with increasing annealing temperature down to 2.43 eV at 773 K. The as-deposited and annealed films show typical semiconducting behaviour, d ρ /d T  > 0. Interestingly, the films annealed at 373 K, 473 K, and 573 K show two distinct temperature dependent regions of electrical resistivity; exponential region at high temperature, lineAr region at low temperature. The temperature at which the transition takes place from exponential to lineAr region strongly depends on the annealing temperature.

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  • ChAracterization of chemically deposited ZnSe/SnO2/glass films: Influence of annealing in Ar Atmosphere on physical properties
    Applied Surface Science, 2011
    Co-Authors: H. Metin, S. Durmuş, Selma Erat, Mehmet Ari

    Abstract:

    Abstract The Zinc Selenide (ZnSe) thin films have been deposited on SnO 2 /glass substrates by a simple and inexpensive chemical bath deposition (CBD). The structural, optical and electrical properties of ZnSe films have been chAracterized by X-ray diffraction (XRD), Energy Dispersive X-ray Analysis (EDAX), optical absorption spectroscopy, and four point probe techniques, respectively. The films have been subjected to different annealing temperature in Argon (Ar) Atmosphere. An increase in annealing temperature does not cause a complete phase transformation whereas it affects the crystallite size, dislocation density and strain. The optical band gap ( E g ) of the as-deposited film is estimated to be 3.08 eV and decreases with increasing annealing temperature down to 2.43 eV at 773 K. The as-deposited and annealed films show typical semiconducting behaviour, d ρ /d T  > 0. Interestingly, the films annealed at 373 K, 473 K, and 573 K show two distinct temperature dependent regions of electrical resistivity; exponential region at high temperature, lineAr region at low temperature. The temperature at which the transition takes place from exponential to lineAr region strongly depends on the annealing temperature.

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H. Metin – One of the best experts on this subject based on the ideXlab platform.

  • chAracterization of chemically deposited znse sno2 glass films influence of annealing in Ar Atmosphere on physical properties
    Applied Surface Science, 2011
    Co-Authors: H. Metin, S. Durmuş, Selma Erat, Mehmet Ari

    Abstract:

    Abstract The Zinc Selenide (ZnSe) thin films have been deposited on SnO 2 /glass substrates by a simple and inexpensive chemical bath deposition (CBD). The structural, optical and electrical properties of ZnSe films have been chAracterized by X-ray diffraction (XRD), Energy Dispersive X-ray Analysis (EDAX), optical absorption spectroscopy, and four point probe techniques, respectively. The films have been subjected to different annealing temperature in Argon (Ar) Atmosphere. An increase in annealing temperature does not cause a complete phase transformation whereas it affects the crystallite size, dislocation density and strain. The optical band gap ( E g ) of the as-deposited film is estimated to be 3.08 eV and decreases with increasing annealing temperature down to 2.43 eV at 773 K. The as-deposited and annealed films show typical semiconducting behaviour, d ρ /d T  > 0. Interestingly, the films annealed at 373 K, 473 K, and 573 K show two distinct temperature dependent regions of electrical resistivity; exponential region at high temperature, lineAr region at low temperature. The temperature at which the transition takes place from exponential to lineAr region strongly depends on the annealing temperature.

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  • ChAracterization of chemically deposited ZnSe/SnO2/glass films: Influence of annealing in Ar Atmosphere on physical properties
    Applied Surface Science, 2011
    Co-Authors: H. Metin, S. Durmuş, Selma Erat, Mehmet Ari

    Abstract:

    Abstract The Zinc Selenide (ZnSe) thin films have been deposited on SnO 2 /glass substrates by a simple and inexpensive chemical bath deposition (CBD). The structural, optical and electrical properties of ZnSe films have been chAracterized by X-ray diffraction (XRD), Energy Dispersive X-ray Analysis (EDAX), optical absorption spectroscopy, and four point probe techniques, respectively. The films have been subjected to different annealing temperature in Argon (Ar) Atmosphere. An increase in annealing temperature does not cause a complete phase transformation whereas it affects the crystallite size, dislocation density and strain. The optical band gap ( E g ) of the as-deposited film is estimated to be 3.08 eV and decreases with increasing annealing temperature down to 2.43 eV at 773 K. The as-deposited and annealed films show typical semiconducting behaviour, d ρ /d T  > 0. Interestingly, the films annealed at 373 K, 473 K, and 573 K show two distinct temperature dependent regions of electrical resistivity; exponential region at high temperature, lineAr region at low temperature. The temperature at which the transition takes place from exponential to lineAr region strongly depends on the annealing temperature.

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Katsumi Yoshino – One of the best experts on this subject based on the ideXlab platform.

  • PrepAration of Ferromagnetic Organic Compounds by Pyrolysis of (2,4,6-Triphenoxy-1,3,5-Triazine/Melamine) in Ar Atmosphere Including a Trace of Dry Air
    Japanese Journal of Applied Physics, 1992
    Co-Authors: Hisashi Araki, Young Bae Roh, Nobuhiro Kuwamura, Katsumi Yoshino

    Abstract:

    Organic compound exhibiting strong ferromagnetism (saturation magnetization 10 emuG/g) was prepAred from a mixture of 2,4,6-triphenoxy-1,3,5-triazine (TPTA) and melamine (M) by pyrolysis at 950°C in Ar Atmosphere including a trace of dry air. The electron spin resonance (ESR) signal of this material also exhibited remArkably lArge intensities (4.7×1023 spins/g) and peak-to-peak linewidth (804 G at 290 K or 1570 G at 100 K). The values of linewidth and of g-factor at 290 K Are compArable to those of iron oxide and of iron, respectively.

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  • prepAration of ferromagnetic organic compounds by pyrolysis of 2 4 6 triphenoxy 1 3 5 triazine melamine in Ar Atmosphere including a trace of dry air
    Japanese Journal of Applied Physics, 1992
    Co-Authors: Hisashi Araki, Young Bae Roh, Nobuhiro Kuwamura, Katsumi Yoshino

    Abstract:

    Organic compound exhibiting strong ferromagnetism (saturation magnetization 10 emuG/g) was prepAred from a mixture of 2,4,6-triphenoxy-1,3,5-triazine (TPTA) and melamine (M) by pyrolysis at 950°C in Ar Atmosphere including a trace of dry air. The electron spin resonance (ESR) signal of this material also exhibited remArkably lArge intensities (4.7×1023 spins/g) and peak-to-peak linewidth (804 G at 290 K or 1570 G at 100 K). The values of linewidth and of g-factor at 290 K Are compArable to those of iron oxide and of iron, respectively.

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