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Argon Ion Laser

The Experts below are selected from a list of 132 Experts worldwide ranked by ideXlab platform

F Bucholtz – 1st expert on this subject based on the ideXlab platform

  • suppressIon of fluorescence interference via wavelength shift keyed raman spectroscopy using an Argon Ion Laser and acousto optic tunable filter
    Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 1998
    Co-Authors: C M Stellman, F Bucholtz

    Abstract:

    Abstract A wavelength shift-keyed (WSK) Raman spectrometer with Argon Ion Laser excitatIon, acousto-optic tunable filter (AOTF) wavelength modulatIon, and synchronous photon counting detectIon has been developed. It has been demonstrated that this novel approach to wavelength modulatIon spectroscopy results in suppressIon of unwanted fluorescence background while giving a substantial increase in signal-to-background over non modulatIon techniques. The relatively low cost, lack of complexity, and durability of the described system increases the utility of shift-keyed Raman spectroscopy to a broader base of users and ‘real world’ applicatIons.

C M Stellman – 2nd expert on this subject based on the ideXlab platform

  • suppressIon of fluorescence interference via wavelength shift keyed raman spectroscopy using an Argon Ion Laser and acousto optic tunable filter
    Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 1998
    Co-Authors: C M Stellman, F Bucholtz

    Abstract:

    Abstract A wavelength shift-keyed (WSK) Raman spectrometer with Argon Ion Laser excitatIon, acousto-optic tunable filter (AOTF) wavelength modulatIon, and synchronous photon counting detectIon has been developed. It has been demonstrated that this novel approach to wavelength modulatIon spectroscopy results in suppressIon of unwanted fluorescence background while giving a substantial increase in signal-to-background over non modulatIon techniques. The relatively low cost, lack of complexity, and durability of the described system increases the utility of shift-keyed Raman spectroscopy to a broader base of users and ‘real world’ applicatIons.

Costas P Grigoropoulos – 3rd expert on this subject based on the ideXlab platform

  • transient heating and melting transformatIons in Argon Ion Laser irradiatIon of polysilicon films
    Journal of Applied Physics, 1993
    Co-Authors: Xianfan Xu, Scott L Taylor, Hee K Park, Costas P Grigoropoulos

    Abstract:

    Undoped, thin silicon films have been deposited at different temperatures on fused quartz substrates by low‐pressure chemical vapor depositIon. The heating of these films by continuous wave, ArgonIon Laser beam irradiatIon has been studied. In situ, normal incidence reflectivity measurements have been obtained at specified locatIons in the semiconductor films. Melting and recrystallizatIon phenomena have been probed by transient measurements. The static film reflectivity at elevated temperatures, up to about 1400 K, has also been measured. The temperature field has been analyzed numerically, using a modified enthalpy model. Thin‐film optics were used to calculate the ArgonIon Laser light absorptIon in the polysilicon layer and the transient reflectivity response to the probing Laser light. The predicted and experimentally measured reflectivity histories have been compared. The initial stages of the phase change process have been captured by high‐speed photography.