The Experts below are selected from a list of 25422 Experts worldwide ranked by ideXlab platform
Ian J. Hodgkinson - One of the best experts on this subject based on the ideXlab platform.
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The influence of Argon Ion bombardment on form birefringence in thin films of titania
Journal of Applied Physics, 1992Co-Authors: R. W. Sprague, Carolyn F. Hickey, Ian J. HodgkinsonAbstract:Thin films of titanium oxide deposited in the presence of oxygen at oblique incidence under Argon Ion bombardment exhibit birefringence that depends on the energy and relative directIon of the Ion beam and material flux.
Costas P Grigoropoulos - One of the best experts on this subject based on the ideXlab platform.
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transient heating and melting transformatIons in Argon Ion laser irradiatIon of polysilicon films
Journal of Applied Physics, 1993Co-Authors: Xianfan Xu, Scott L Taylor, Hee K Park, Costas P GrigoropoulosAbstract:Undoped, thin silicon films have been deposited at different temperatures on fused quartz substrates by low‐pressure chemical vapor depositIon. The heating of these films by continuous wave, Argon‐Ion laser beam irradiatIon has been studied. In situ, normal incidence reflectivity measurements have been obtained at specified locatIons in the semiconductor films. Melting and recrystallizatIon phenomena have been probed by transient measurements. The static film reflectivity at elevated temperatures, up to about 1400 K, has also been measured. The temperature field has been analyzed numerically, using a modified enthalpy model. Thin‐film optics were used to calculate the Argon‐Ion laser light absorptIon in the polysilicon layer and the transient reflectivity response to the probing laser light. The predicted and experimentally measured reflectivity histories have been compared. The initial stages of the phase change process have been captured by high‐speed photography.
R. W. Sprague - One of the best experts on this subject based on the ideXlab platform.
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The influence of Argon Ion bombardment on form birefringence in thin films of titania
Journal of Applied Physics, 1992Co-Authors: R. W. Sprague, Carolyn F. Hickey, Ian J. HodgkinsonAbstract:Thin films of titanium oxide deposited in the presence of oxygen at oblique incidence under Argon Ion bombardment exhibit birefringence that depends on the energy and relative directIon of the Ion beam and material flux.
C Alves Junior - One of the best experts on this subject based on the ideXlab platform.
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Influence of Argon-Ion bombardment of titanium surfaces on the cell behavior
Surface and Coatings Technology, 2009Co-Authors: R.a. De Brito, Carlos Eduardo Bezerra De Moura, Naisandra Bezerra Da Silva, M.b.m. Alves, C Alves JuniorAbstract:Several studies in vitro and in vivo accomplished in dental implants have demonstrated that the chemical and physical properties of biomaterials are able to regulate the initial tecidual response around the implant. This tecidual response depends directly on the hydrophily, roughness, texture and chemical compositIon of the surface. Plasma treatment can be used to improve the surface properties of commercial pure Ti, in order to create different surface topographies, changes in roughness, and modificatIons in the surface wettability. In this study a surface modificatIon in titanium Cp degree II was carried out, through the plasma treatment and using Argon-Ion bombardment. A comparison of surface properties and their influence on the cells behavior was also accomplished, besides the quantificatIon of surface roughness, wettability and cellular proliferatIon. The results showed that the Argon-Ion bombardment influences the surface energy value, surface roughness and the surface topography of Ti materials. These parameters influence the cellular proliferatIon process.
Xianfan Xu - One of the best experts on this subject based on the ideXlab platform.
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transient heating and melting transformatIons in Argon Ion laser irradiatIon of polysilicon films
Journal of Applied Physics, 1993Co-Authors: Xianfan Xu, Scott L Taylor, Hee K Park, Costas P GrigoropoulosAbstract:Undoped, thin silicon films have been deposited at different temperatures on fused quartz substrates by low‐pressure chemical vapor depositIon. The heating of these films by continuous wave, Argon‐Ion laser beam irradiatIon has been studied. In situ, normal incidence reflectivity measurements have been obtained at specified locatIons in the semiconductor films. Melting and recrystallizatIon phenomena have been probed by transient measurements. The static film reflectivity at elevated temperatures, up to about 1400 K, has also been measured. The temperature field has been analyzed numerically, using a modified enthalpy model. Thin‐film optics were used to calculate the Argon‐Ion laser light absorptIon in the polysilicon layer and the transient reflectivity response to the probing laser light. The predicted and experimentally measured reflectivity histories have been compared. The initial stages of the phase change process have been captured by high‐speed photography.