Arsenide - Explore the Science & Experts | ideXlab

Scan Science and Technology

Contact Leading Edge Experts & Companies

Arsenide

The Experts below are selected from a list of 40437 Experts worldwide ranked by ideXlab platform

Leila Balaghi – One of the best experts on this subject based on the ideXlab platform.

  • Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch
    Nature Communications, 2019
    Co-Authors: Leila Balaghi, Genziana Bussone, Raphael Grifone, René Hübner, Jörg Grenzer, Mahdi Ghorbani-asl, Arkady V. Krasheninnikov, Harald Schneider, Manfred Helm, Emmanouil Dimakis

    Abstract:

    Designing core/shell nanowires with desired optoelectronic properties of III-V semiconductor alloys remains a challenge. Here, the authors report an engineering strategy to surmount strain-induced difficulties in the growth achieving highly strained cores with a sizeable change in their band gap. The realisation of photonic devices for different energy ranges demands materials with different bandgaps, sometimes even within the same device. The optimal solution in terms of integration, device performance and device economics would be a simple material system with widely tunable bandgap and compatible with the mainstream silicon technology. Here, we show that gallium Arsenide nanowires grown epitaxially on silicon substrates exhibit a sizeable reduction of their bandgap by up to 40% when overgrown with lattice-mismatched indium gallium Arsenide or indium aluminium Arsenide shells. Specifically, we demonstrate that the gallium Arsenide core sustains unusually large tensile strain with hydrostatic character and its magnitude can be engineered via the composition and the thickness of the shell. The resulted bandgap reduction renders gallium Arsenide nanowires suitable for photonic devices across the near-infrared range, including telecom photonics at 1.3 and potentially 1.55 μm, with the additional possibility of monolithic integration in silicon-CMOS chips.

  • widely tunable gaas bandgap via strain engineering in core shell nanowires with large lattice mismatch
    Nature Communications, 2019
    Co-Authors: Leila Balaghi, Genziana Bussone, Raphael Grifone, René Hübner, Jörg Grenzer, Arkady V. Krasheninnikov, Harald Schneider, Mahdi Ghorbaniasl, Manfred Helm

    Abstract:

    The realisation of photonic devices for different energy ranges demands materials with different bandgaps, sometimes even within the same device. The optimal solution in terms of integration, device performance and device economics would be a simple material system with widely tunable bandgap and compatible with the mainstream silicon technology. Here, we show that gallium Arsenide nanowires grown epitaxially on silicon substrates exhibit a sizeable reduction of their bandgap by up to 40% when overgrown with lattice-mismatched indium gallium Arsenide or indium aluminium Arsenide shells. Specifically, we demonstrate that the gallium Arsenide core sustains unusually large tensile strain with hydrostatic character and its magnitude can be engineered via the composition and the thickness of the shell. The resulted bandgap reduction renders gallium Arsenide nanowires suitable for photonic devices across the near-infrared range, including telecom photonics at 1.3 and potentially 1.55 μm, with the additional possibility of monolithic integration in silicon-CMOS chips. Designing core/shell nanowires with desired optoelectronic properties of III-V semiconductor alloys remains a challenge. Here, the authors report an engineering strategy to surmount strain-induced difficulties in the growth achieving highly strained cores with a sizeable change in their band gap.

Manfred Helm – One of the best experts on this subject based on the ideXlab platform.

  • Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch
    Nature Communications, 2019
    Co-Authors: Leila Balaghi, Genziana Bussone, Raphael Grifone, René Hübner, Jörg Grenzer, Mahdi Ghorbani-asl, Arkady V. Krasheninnikov, Harald Schneider, Manfred Helm, Emmanouil Dimakis

    Abstract:

    Designing core/shell nanowires with desired optoelectronic properties of III-V semiconductor alloys remains a challenge. Here, the authors report an engineering strategy to surmount strain-induced difficulties in the growth achieving highly strained cores with a sizeable change in their band gap. The realisation of photonic devices for different energy ranges demands materials with different bandgaps, sometimes even within the same device. The optimal solution in terms of integration, device performance and device economics would be a simple material system with widely tunable bandgap and compatible with the mainstream silicon technology. Here, we show that gallium Arsenide nanowires grown epitaxially on silicon substrates exhibit a sizeable reduction of their bandgap by up to 40% when overgrown with lattice-mismatched indium gallium Arsenide or indium aluminium Arsenide shells. Specifically, we demonstrate that the gallium Arsenide core sustains unusually large tensile strain with hydrostatic character and its magnitude can be engineered via the composition and the thickness of the shell. The resulted bandgap reduction renders gallium Arsenide nanowires suitable for photonic devices across the near-infrared range, including telecom photonics at 1.3 and potentially 1.55 μm, with the additional possibility of monolithic integration in silicon-CMOS chips.

  • widely tunable gaas bandgap via strain engineering in core shell nanowires with large lattice mismatch
    Nature Communications, 2019
    Co-Authors: Leila Balaghi, Genziana Bussone, Raphael Grifone, René Hübner, Jörg Grenzer, Arkady V. Krasheninnikov, Harald Schneider, Mahdi Ghorbaniasl, Manfred Helm

    Abstract:

    The realisation of photonic devices for different energy ranges demands materials with different bandgaps, sometimes even within the same device. The optimal solution in terms of integration, device performance and device economics would be a simple material system with widely tunable bandgap and compatible with the mainstream silicon technology. Here, we show that gallium Arsenide nanowires grown epitaxially on silicon substrates exhibit a sizeable reduction of their bandgap by up to 40% when overgrown with lattice-mismatched indium gallium Arsenide or indium aluminium Arsenide shells. Specifically, we demonstrate that the gallium Arsenide core sustains unusually large tensile strain with hydrostatic character and its magnitude can be engineered via the composition and the thickness of the shell. The resulted bandgap reduction renders gallium Arsenide nanowires suitable for photonic devices across the near-infrared range, including telecom photonics at 1.3 and potentially 1.55 μm, with the additional possibility of monolithic integration in silicon-CMOS chips. Designing core/shell nanowires with desired optoelectronic properties of III-V semiconductor alloys remains a challenge. Here, the authors report an engineering strategy to surmount strain-induced difficulties in the growth achieving highly strained cores with a sizeable change in their band gap.

Emmanouil Dimakis – One of the best experts on this subject based on the ideXlab platform.

  • Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch
    Nature Communications, 2019
    Co-Authors: Leila Balaghi, Genziana Bussone, Raphael Grifone, René Hübner, Jörg Grenzer, Mahdi Ghorbani-asl, Arkady V. Krasheninnikov, Harald Schneider, Manfred Helm, Emmanouil Dimakis

    Abstract:

    Designing core/shell nanowires with desired optoelectronic properties of III-V semiconductor alloys remains a challenge. Here, the authors report an engineering strategy to surmount strain-induced difficulties in the growth achieving highly strained cores with a sizeable change in their band gap. The realisation of photonic devices for different energy ranges demands materials with different bandgaps, sometimes even within the same device. The optimal solution in terms of integration, device performance and device economics would be a simple material system with widely tunable bandgap and compatible with the mainstream silicon technology. Here, we show that gallium Arsenide nanowires grown epitaxially on silicon substrates exhibit a sizeable reduction of their bandgap by up to 40% when overgrown with lattice-mismatched indium gallium Arsenide or indium aluminium Arsenide shells. Specifically, we demonstrate that the gallium Arsenide core sustains unusually large tensile strain with hydrostatic character and its magnitude can be engineered via the composition and the thickness of the shell. The resulted bandgap reduction renders gallium Arsenide nanowires suitable for photonic devices across the near-infrared range, including telecom photonics at 1.3 and potentially 1.55 μm, with the additional possibility of monolithic integration in silicon-CMOS chips.