The Experts below are selected from a list of 231 Experts worldwide ranked by ideXlab platform
Mikio Kamada - One of the best experts on this subject based on the ideXlab platform.
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Saturation of Si Atom Concentration in Si planar‐doped InP layers grown by metalorganic chemical vapor deposition
Applied Physics Letters, 1991Co-Authors: Hideto Ishikawa, Shiro Miwa, Toshiyuki Maruyama, Mikio KamadaAbstract:A mechanism which causes saturation in Si Atom Concentration in planar‐doped InP layers was investigated. The layers were grown by atmospheric metalorganic chemical vapor deposition (MOCVD) and planar doping was performed by supplying Si2H6 in PH3 atmosphere. We found that the sheet Si Atom Concentration of the layers saturated as a function of doping time. We propose a new model which can describe the saturation as competition between adsorption and desorption. This model will describe the doping time dependence and the PH3 flow rate dependence of sheet Si Atom Concentration of planar‐doped InP layers grown by MOCVD.
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saturation of si Atom Concentration in si planar doped inp layers grown by metalorganic chemical vapor deposition
Applied Physics Letters, 1991Co-Authors: Hideto Ishikawa, Shiro Miwa, Toshiyuki Maruyama, Mikio KamadaAbstract:A mechanism which causes saturation in Si Atom Concentration in planar‐doped InP layers was investigated. The layers were grown by atmospheric metalorganic chemical vapor deposition (MOCVD) and planar doping was performed by supplying Si2H6 in PH3 atmosphere. We found that the sheet Si Atom Concentration of the layers saturated as a function of doping time. We propose a new model which can describe the saturation as competition between adsorption and desorption. This model will describe the doping time dependence and the PH3 flow rate dependence of sheet Si Atom Concentration of planar‐doped InP layers grown by MOCVD.
Hideto Ishikawa - One of the best experts on this subject based on the ideXlab platform.
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Saturation of Si Atom Concentration in Si planar‐doped InP layers grown by metalorganic chemical vapor deposition
Applied Physics Letters, 1991Co-Authors: Hideto Ishikawa, Shiro Miwa, Toshiyuki Maruyama, Mikio KamadaAbstract:A mechanism which causes saturation in Si Atom Concentration in planar‐doped InP layers was investigated. The layers were grown by atmospheric metalorganic chemical vapor deposition (MOCVD) and planar doping was performed by supplying Si2H6 in PH3 atmosphere. We found that the sheet Si Atom Concentration of the layers saturated as a function of doping time. We propose a new model which can describe the saturation as competition between adsorption and desorption. This model will describe the doping time dependence and the PH3 flow rate dependence of sheet Si Atom Concentration of planar‐doped InP layers grown by MOCVD.
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saturation of si Atom Concentration in si planar doped inp layers grown by metalorganic chemical vapor deposition
Applied Physics Letters, 1991Co-Authors: Hideto Ishikawa, Shiro Miwa, Toshiyuki Maruyama, Mikio KamadaAbstract:A mechanism which causes saturation in Si Atom Concentration in planar‐doped InP layers was investigated. The layers were grown by atmospheric metalorganic chemical vapor deposition (MOCVD) and planar doping was performed by supplying Si2H6 in PH3 atmosphere. We found that the sheet Si Atom Concentration of the layers saturated as a function of doping time. We propose a new model which can describe the saturation as competition between adsorption and desorption. This model will describe the doping time dependence and the PH3 flow rate dependence of sheet Si Atom Concentration of planar‐doped InP layers grown by MOCVD.
P. Roth - One of the best experts on this subject based on the ideXlab platform.
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A shock tube study of the reaction H[sub 2] + NO [yields] HNO + H
1994Co-Authors: K. Natarajan, H.j. Mick, D. Woiki, P. RothAbstract:The high-temperature reaction of NO with H[sub 2] has been studied behind reflected shock waves in the temperature range of 1,760--2,160 K at total pressures of 1.4 to 2.0 bar by monitoring the time-dependent H-Atom Concentrations in the postshock reaction zone using Atomic resonance absorption spectroscopy (ARAS). Mixtures of NO and H[sub 2] highly diluted in argon were used as initial reactants. The rate coefficient, k[sub 1], of the initiation reaction: NO + H[sub 2] [yields] HNO + H has been determined from the measured initial H-Atom Concentration slopes to be k[sub 1] = 1.5[times]10[sup 13] exp(-26165K/T) cm[sup 3]/mol s, taking the fast decomposition of HNO into account. This direct determination of the rate coefficient k[sub 1] was possible, because the contribution of H[sub 2] dissociation to the total H Atom Concentration of the system was relatively small in the temperature and Concentration ranges of this study. Measured O-Atom Concentrations in the high-temperature H[sub 2]/NO/Ar reaction system (2,560 K [le] T [le] 4,040 K) were sensitive to the reaction NO + H [yields] OH + N, resulting in an estimate of its rate coefficient. A simplified mechanism of 15 elementary reactions was able to predict all measured H and Omore » Atom profiles with reasonable accuracy.« less
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A shock tube study of the reaction H2 + NO → HNO + H
Combustion and Flame, 1994Co-Authors: K. Natarajan, H.j. Mick, D. Woiki, P. RothAbstract:Abstract The high-temperature reaction of NO with H 2 has been studied behind reflected shock waves in the temperature range of 1760–2160 K at total pressures of 1.4 to 2.0 bar by monitoring the time-dependent H-Atom Concentrations in the postshock reaction zone using Atomic resonance absorption spectroscopy (ARAS). Mixtures of NO and H 2 highly diluted in argon were used as initial reactants. The rate coefficient, k 1 , of the initiation reaction: NO + H 2 → HNO + H has been determined from the measured initial H-Atom Concentration slopes to be k 1 = 1.5 × 10 13 exp(−26165 K/T )cm 3 mol −1 s −1 , taking the fast decomposition of HNO into account. This direct deterination of the rate coefficient k 1 was possible, because the contribution of H 2 dissociation to the total H Atom Concentration of the system was relatively small in the temperature and Concentration ranges of this study. Measured O-Atom Concentrations in the high-temperature H 2 /NO/Ar reaction system (2560 K ≤ T ≤ 4040 K) were sensitive to the reaction NO + H → OH + N, resulting in an estimate of its rate coefficient. A simplified mechanism of 15 elementary reactions was able to predict all measured H and O Atom profiles with reasonable accuracy.
Toshiyuki Maruyama - One of the best experts on this subject based on the ideXlab platform.
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Saturation of Si Atom Concentration in Si planar‐doped InP layers grown by metalorganic chemical vapor deposition
Applied Physics Letters, 1991Co-Authors: Hideto Ishikawa, Shiro Miwa, Toshiyuki Maruyama, Mikio KamadaAbstract:A mechanism which causes saturation in Si Atom Concentration in planar‐doped InP layers was investigated. The layers were grown by atmospheric metalorganic chemical vapor deposition (MOCVD) and planar doping was performed by supplying Si2H6 in PH3 atmosphere. We found that the sheet Si Atom Concentration of the layers saturated as a function of doping time. We propose a new model which can describe the saturation as competition between adsorption and desorption. This model will describe the doping time dependence and the PH3 flow rate dependence of sheet Si Atom Concentration of planar‐doped InP layers grown by MOCVD.
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saturation of si Atom Concentration in si planar doped inp layers grown by metalorganic chemical vapor deposition
Applied Physics Letters, 1991Co-Authors: Hideto Ishikawa, Shiro Miwa, Toshiyuki Maruyama, Mikio KamadaAbstract:A mechanism which causes saturation in Si Atom Concentration in planar‐doped InP layers was investigated. The layers were grown by atmospheric metalorganic chemical vapor deposition (MOCVD) and planar doping was performed by supplying Si2H6 in PH3 atmosphere. We found that the sheet Si Atom Concentration of the layers saturated as a function of doping time. We propose a new model which can describe the saturation as competition between adsorption and desorption. This model will describe the doping time dependence and the PH3 flow rate dependence of sheet Si Atom Concentration of planar‐doped InP layers grown by MOCVD.
Shiro Miwa - One of the best experts on this subject based on the ideXlab platform.
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Saturation of Si Atom Concentration in Si planar‐doped InP layers grown by metalorganic chemical vapor deposition
Applied Physics Letters, 1991Co-Authors: Hideto Ishikawa, Shiro Miwa, Toshiyuki Maruyama, Mikio KamadaAbstract:A mechanism which causes saturation in Si Atom Concentration in planar‐doped InP layers was investigated. The layers were grown by atmospheric metalorganic chemical vapor deposition (MOCVD) and planar doping was performed by supplying Si2H6 in PH3 atmosphere. We found that the sheet Si Atom Concentration of the layers saturated as a function of doping time. We propose a new model which can describe the saturation as competition between adsorption and desorption. This model will describe the doping time dependence and the PH3 flow rate dependence of sheet Si Atom Concentration of planar‐doped InP layers grown by MOCVD.
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saturation of si Atom Concentration in si planar doped inp layers grown by metalorganic chemical vapor deposition
Applied Physics Letters, 1991Co-Authors: Hideto Ishikawa, Shiro Miwa, Toshiyuki Maruyama, Mikio KamadaAbstract:A mechanism which causes saturation in Si Atom Concentration in planar‐doped InP layers was investigated. The layers were grown by atmospheric metalorganic chemical vapor deposition (MOCVD) and planar doping was performed by supplying Si2H6 in PH3 atmosphere. We found that the sheet Si Atom Concentration of the layers saturated as a function of doping time. We propose a new model which can describe the saturation as competition between adsorption and desorption. This model will describe the doping time dependence and the PH3 flow rate dependence of sheet Si Atom Concentration of planar‐doped InP layers grown by MOCVD.