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Attenuation Loss
The Experts below are selected from a list of 300 Experts worldwide ranked by ideXlab platform
Ahsan Ashfaq – 1st expert on this subject based on the ideXlab platform
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Macro Bending Effect in Optical Fiber Composite Low Voltage Cable
2018 IEEE 2nd International Conference on Dielectrics (ICD), 2018Co-Authors: Ahsan Ashfaq, Yu Chen, Jing YuAbstract:Smart Grid distribution network comprised of power supply cable as well as two way communication between the customer and grid. This two way communication is carried out by Optical fiber composite low voltage cable (OPLC). In the installation of OPLC cable, the most important factor to be taken care of is the Attenuation Loss occur in optical unit. In Attenuation Loss, macro bending is one of the major contributors. Therefore it is necessary to minimize the macro bending Loss in signal Attenuation while installing the OPLC cable. In this paper, we have studied the macro bending effect in optical fiber unit of optical fiber composite low voltage cable that occurs in handling and installation process of the cable. In the paper, simulation is being done by using COMSOL to measure the Attenuation Loss in bending the cable at the suggested radius. The experiment is carried out to analyze and investigate the Attenuation Loss at different bending radius and number of turns. The critical radius and suggested radius for installation have been proposed to keep the Attenuation Loss below 0.15 dB.
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Microbending Loss caused by stress in optical fiber composite low voltage cable
2018 12th International Conference on the Properties and Applications of Dielectric Materials (ICPADM), 2018Co-Authors: Ahsan Ashfaq, Yu Chen, Jing YuAbstract:In Power systems the smart grids are taking place of the traditional grids. The main aspect of the smart grid is the two way communication between the power grid and consumer. This two way communication can be carried out by a single cable having conductors and optical fiber in a single OPLC cable. In this paper, we worked on the performance analysis of optical fiber when stranded together with phase conductors as the stress generated by the increase of temperature causes microbending in the optical fiber. In this paper, G.652.D and G.657.A2 are analyzed by using teeth connector experimental setup to experimentally scrutinize the Attenuation Loss occur due to the displacement of cladding layer with in the optical fiber due to the stress generated by the current flow in conductors. The step size is taken as 0.01 mm to create the micro bend in the optical fiber and analyze the number of micro bends the optical fiber can handle for the Attenuation Loss up to 0.15 dB/km. A critical displacement is determined for the optical fiber above which the Loss has become unacceptable for the communication.
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Power Loss due to temperature rise in the optical unit of optical fiber composite low voltage cable
2018 12th International Conference on the Properties and Applications of Dielectric Materials (ICPADM), 2018Co-Authors: Yu Chen, Ahsan AshfaqAbstract:Smart Grid distribution network consist of power supply cable as well as two way communication between the customer and grid. This two way communication is carried out by Optical Fiber composite low voltage cable (OPLC). OPLC is the product of Sate Grid Corporation of China. As the three phase current flow in the conductors the flow of current cause the temperature to rise in the cable. This temperature rise affects the light in the single mode optical fiber in the cable causing the Attenuation Loss. In this paper we have analyzed the power Loss in optical fiber as the temperature rise due to flow of current in the cable. The single mode optical fiber G.652.D at the temperature range from -30 °C to 100 °C. We have used the light source (Fiberlabs) to transmit light in the single mode fiber as an input, the power energy meter PM320E to measure the output power and the Attenuation Loss, temperature controller to control the desired temperature at which the power Loss is measured, the data obtained is saved by using the RS232 protocol by PM320E data log. And the experimental results are fitted with the theoretical analysis.
Androula G. Nassiopoulou – 2nd expert on this subject based on the ideXlab platform
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Dielectric Permittivity of Porous Si for Use as Substrate Material in Si-Integrated RF Devices
IEEE Transactions on Electron Devices, 2013Co-Authors: Panagiotis Sarafis, Emmanouel Hourdakis, Androula G. NassiopoulouAbstract:Dielectric permittivity of porous Si (PSi) layers formed on a low-resistivity p-type Si (0.001-0.005 Ω.cm) is thoroughly investigated using analytical expressions within the frame of broadband transmission line characterization method in the frequency range 1-40 GHz. It is demonstrated that the value of Si resistivity is critical for the resulting PSi layer permittivity even within the above limited resistivity range. The real part of PSi dielectric permittivity changes monotonically between 1.8 and 4 by changing the Si resistivity between 0.001 and 0.005 Ω.cm. The above study was made for porosities between 70% and 84%. The quality factor and Attenuation Loss of the investigated coplanar waveguide transmission lines were found to be Q=26 and a=0.19 dB/mm, respectively, at 40 GHz. These values are competitive to those obtained on quartz, which is one of the off-chip RF substrates with the lowest Losses. This confirms the superiority of the PSi material, mentioned above, for use as a local substrate for the on-chip RF device integration.
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On-Chip High-Performance Millimeter-Wave Transmission Lines on Locally Grown Porous Silicon Areas
IEEE Transactions on Electron Devices, 2011Co-Authors: Hamza Issa, Philippe Ferrari, Emmanouel Hourdakis, Androula G. NassiopoulouAbstract:High-performance on-chip coplanar-waveguide (CPW) transmission lines (TLs) were fabricated on locally formed porous silicon membranes on the Si wafer, and their millimeter-wave (mmW) characteristics were measured up to 110 GHz. It was demonstrated that a quality factor three times higher than that of conventional CPWs fabricated in standard CMOS on bulk crystalline Si can be obtained in mmW frequencies. The measured values of the Attenuation Loss were ~ 0.35 dB/mm at 60 GHz and ~ 0.55 dB/mm at 110 GHz. The obtained Attenuation Loss was independent of the realized TL characteristic impedance (50 and 145 Ω). These results are better than the state-of-the-art results in the literature obtained using CMOS on high-resistivity (HR) Si substrates (CMOS HR technologies). They show the potential of using locally formed porous Si membranes in mmW shielding on the Si wafer, in addition to the already demonstrated RF shielding (frequencies up to 40 GHz).
Olivier Hubert – 3rd expert on this subject based on the ideXlab platform
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Low-Loss Patterned Ground Shield Interconnect Transmission Lines in Advanced IC Processes
IEEE Transactions on Microwave Theory and Techniques, 2007Co-Authors: Luuk F. Tiemeijer, Ralf M. T. Pijper, Ramon J. Havens, Olivier HubertAbstract:In this paper, we provide an extensive experimental and theoretical study of the benefits of patterned ground shield interconnect transmission lines over more conventional layouts in advanced integrated-circuit processes. As part of this experimental work, we present the first comparative study taken on truly differential transmission line test structures. Our experimental results obtained on transmission lines with patterned ground shields are compared against a predictive compact equivalent-circuit model. This model employs exact closed-form expressions for the inductances, and describes key performance figures such as characteristic impedance and Attenuation Loss with excellent accuracy