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Auger Effect

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Philippe De Mierry – One of the best experts on this subject based on the ideXlab platform.

  • Auger Effect in yellow light emitters based on ingan algan gan quantum wells
    Japanese Journal of Applied Physics, 2016
    Co-Authors: Pierre Valvin, B Damilano, Kaddour Lekhal, Philippe De Mierry

    Abstract:

    The Auger Effect and its impact on the internal quantum efficiency (IQE) of yellow light emitters based on silicon-doped InGaN–AlGaN–GaN quantum wells are investigated by power dependence measurement and using an ABC model. Photoluminescence intensity recorded as a function of excitation power density follows a linear dependence up to a threshold P T that depends on the design of the sample. Above this threshold, the variation of the intensity becomes sublinear, which is characteristic of the onset of Auger recombination processes. After extracting the evolution of IQE with pump power from the experimental data, we use a modified ABC modeling that includes the residual n-type doping to estimate the contribution of different recombination channels. We find that the Auger Effect dominates in the high-excitation regime. In addition, we find that intercalating an AlGaN-strain-compensating layer reduces not only the coefficient of nonradiative recombination rates but also reduces the onset of Auger recombination.

  • Auger Effect in yellow light emitters based on InGaN–AlGaN–GaN quantum wells
    Japanese Journal of Applied Physics, 2016
    Co-Authors: Pierre Valvin, B Damilano, Kaddour Lekhal, Philippe De Mierry

    Abstract:

    International audienceThe Auger Effect and its impact on the internal quantum efficiency (IQE) of yellow light emitters based on silicon-doped InGaN–AlGaN–GaN quantum wells are investigated by power dependence measurement and using an ABC model. Photoluminescence intensity recorded as a function of excitation power density follows a linear dependence up to a threshold PT that depends on the design of the sample. Above this threshold, the variation of the intensity becomes sublinear, which is characteristic of the onset of Auger recombination processes. After extracting the evolution of IQE with pump power from the experimental data, we use a modified ABC modeling that includes the residual n-type doping to estimate the contribution of different recombination channels. We find that the Auger Effect dominates in the high-excitation regime. In addition, we find that intercalating an AlGaN-strain-compensating layer reduces not only the coefficient of nonradiative recombination rates but also reduces the onset of Auger recombination

  • Auger Effect in yellow light emitters based on InGaN–AlGaN–GaN quantum wells
    Japanese Journal of Applied Physics, 2016
    Co-Authors: Pierre Valvin, B Damilano, Kaddour Lekhal, Philippe De Mierry

    Abstract:

    The Auger Effect and its impact on the internal quantum efficiency (IQE) of yellow light emitters based on silicon-doped InGaN–AlGaN–GaN quantum wells are investigated by power dependence measurement and using an ABC model. Photoluminescence intensity recorded as a function of excitation power density follows a linear dependence up to a threshold P T that depends on the design of the sample. Above this threshold, the variation of the intensity becomes sublinear, which is characteristic of the onset of Auger recombination processes. After extracting the evolution of IQE with pump power from the experimental data, we use a modified ABC modeling that includes the residual n-type doping to estimate the contribution of different recombination channels. We find that the Auger Effect dominates in the high-excitation regime. In addition, we find that intercalating an AlGaN-strain-compensating layer reduces not only the coefficient of nonradiative recombination rates but also reduces the onset of Auger recombination.

S Aksela – One of the best experts on this subject based on the ideXlab platform.

  • the resonant Auger Effect
    Journal of Physics B, 2000
    Co-Authors: Bradley G Armen, H Aksela, T Aberg, S Aksela

    Abstract:

    A brief survey of the resonant Raman Auger Effect is presented. An outline of experimental considerations and equipment is given. The theory of the resonant Auger Effect is outlined within the context of a resonant photoionization process, which we hope will provide new researchers in the field a simplified feel for the physics involved. Our focus is on the atomic problem, but we include the connection to the molecular case with some accompanying discussion. Within this context we then discuss some examples which address a number of issues we feel are central to the subject: coherence between intermediate states, the treatment and meaning of correlation Effects, the relation to the normal Auger Effect, and the experimental complications due to incident-photon bandpass Effects.

T. Gebhard – One of the best experts on this subject based on the ideXlab platform.

  • INTRABAND Auger Effect IN QUANTUM DOT STRUCTURES
    International Journal of Modern Physics B, 2009
    Co-Authors: T. Gebhard, Karl Unterrainer, D. Alvarenga, Paulo Sérgio Soares Guimarães, José M. Villas-bôas, Mauricio P. Pires, G. S. Vieira, Patricia L. Souza

    Abstract:

    Intraband photocurrent and absorption measurements were performed on InAs/InGaAlAs/InP quantum dot structures. To identify the optical transitions, theoretical calculations were performed and showed that the observed PC is generated by a bound to bound transition, where the final state is about 200 meV deep below the conduction band continuum. The reported results strongly suggest that an Auger process plays a fundamental role in generating the observed intraband photocurrent.

  • intraband Auger Effect in inas ingaalas inp quantum dot structures
    Applied Physics Letters, 2008
    Co-Authors: T. Gebhard, Patricia L. Souza, Karl Unterrainer, D. Alvarenga, Paulo Sérgio Soares Guimarães, Mauricio P. Pires, G. S. Vieira, J M Villasboas

    Abstract:

    InAs quantum dot structures grown on InGaAlAs have been investigated for midinfrared photodetection. Intraband photocurrent and absorption measurements, together with a full three-dimensional theoretical modeling revealed that a bound-to-bound optical transition, where the final state is about 200meV deep below the conduction band continuum, is responsible for the photogenerated current. The reported results strongly suggest that an Auger process plays a fundamental role in generating the observed intraband photocurrent. Photoluminescence and interband photocurrent spectra of the same structures further support the reached conclusions.