The Experts below are selected from a list of 210 Experts worldwide ranked by ideXlab platform
Philippe De Mierry - One of the best experts on this subject based on the ideXlab platform.
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Auger Effect in yellow light emitters based on ingan algan gan quantum wells
Japanese Journal of Applied Physics, 2016Co-Authors: Pierre Valvin, B Damilano, Kaddour Lekhal, Philippe De MierryAbstract:The Auger Effect and its impact on the internal quantum efficiency (IQE) of yellow light emitters based on silicon-doped InGaN–AlGaN–GaN quantum wells are investigated by power dependence measurement and using an ABC model. Photoluminescence intensity recorded as a function of excitation power density follows a linear dependence up to a threshold P T that depends on the design of the sample. Above this threshold, the variation of the intensity becomes sublinear, which is characteristic of the onset of Auger recombination processes. After extracting the evolution of IQE with pump power from the experimental data, we use a modified ABC modeling that includes the residual n-type doping to estimate the contribution of different recombination channels. We find that the Auger Effect dominates in the high-excitation regime. In addition, we find that intercalating an AlGaN-strain-compensating layer reduces not only the coefficient of nonradiative recombination rates but also reduces the onset of Auger recombination.
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Auger Effect in yellow light emitters based on InGaN–AlGaN–GaN quantum wells
Japanese Journal of Applied Physics, 2016Co-Authors: Pierre Valvin, B Damilano, Kaddour Lekhal, Philippe De MierryAbstract:International audienceThe Auger Effect and its impact on the internal quantum efficiency (IQE) of yellow light emitters based on silicon-doped InGaN–AlGaN–GaN quantum wells are investigated by power dependence measurement and using an ABC model. Photoluminescence intensity recorded as a function of excitation power density follows a linear dependence up to a threshold PT that depends on the design of the sample. Above this threshold, the variation of the intensity becomes sublinear, which is characteristic of the onset of Auger recombination processes. After extracting the evolution of IQE with pump power from the experimental data, we use a modified ABC modeling that includes the residual n-type doping to estimate the contribution of different recombination channels. We find that the Auger Effect dominates in the high-excitation regime. In addition, we find that intercalating an AlGaN-strain-compensating layer reduces not only the coefficient of nonradiative recombination rates but also reduces the onset of Auger recombination
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Auger Effect in yellow light emitters based on InGaN–AlGaN–GaN quantum wells
Japanese Journal of Applied Physics, 2016Co-Authors: Pierre Valvin, B Damilano, Kaddour Lekhal, Philippe De MierryAbstract:The Auger Effect and its impact on the internal quantum efficiency (IQE) of yellow light emitters based on silicon-doped InGaN–AlGaN–GaN quantum wells are investigated by power dependence measurement and using an ABC model. Photoluminescence intensity recorded as a function of excitation power density follows a linear dependence up to a threshold P T that depends on the design of the sample. Above this threshold, the variation of the intensity becomes sublinear, which is characteristic of the onset of Auger recombination processes. After extracting the evolution of IQE with pump power from the experimental data, we use a modified ABC modeling that includes the residual n-type doping to estimate the contribution of different recombination channels. We find that the Auger Effect dominates in the high-excitation regime. In addition, we find that intercalating an AlGaN-strain-compensating layer reduces not only the coefficient of nonradiative recombination rates but also reduces the onset of Auger recombination.
S Aksela - One of the best experts on this subject based on the ideXlab platform.
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the resonant Auger Effect
Journal of Physics B, 2000Co-Authors: Bradley G Armen, H Aksela, T Aberg, S AkselaAbstract:A brief survey of the resonant Raman Auger Effect is presented. An outline of experimental considerations and equipment is given. The theory of the resonant Auger Effect is outlined within the context of a resonant photoionization process, which we hope will provide new researchers in the field a simplified feel for the physics involved. Our focus is on the atomic problem, but we include the connection to the molecular case with some accompanying discussion. Within this context we then discuss some examples which address a number of issues we feel are central to the subject: coherence between intermediate states, the treatment and meaning of correlation Effects, the relation to the normal Auger Effect, and the experimental complications due to incident-photon bandpass Effects.
T. Gebhard - One of the best experts on this subject based on the ideXlab platform.
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INTRABAND Auger Effect IN QUANTUM DOT STRUCTURES
International Journal of Modern Physics B, 2009Co-Authors: T. Gebhard, Karl Unterrainer, D. Alvarenga, Paulo Sérgio Soares Guimarães, José M. Villas-bôas, Mauricio P. Pires, G. S. Vieira, Patricia L. SouzaAbstract:Intraband photocurrent and absorption measurements were performed on InAs/InGaAlAs/InP quantum dot structures. To identify the optical transitions, theoretical calculations were performed and showed that the observed PC is generated by a bound to bound transition, where the final state is about 200 meV deep below the conduction band continuum. The reported results strongly suggest that an Auger process plays a fundamental role in generating the observed intraband photocurrent.
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intraband Auger Effect in inas ingaalas inp quantum dot structures
Applied Physics Letters, 2008Co-Authors: T. Gebhard, Karl Unterrainer, D. Alvarenga, Paulo Sérgio Soares Guimarães, Mauricio P. Pires, G. S. Vieira, Patricia L. Souza, J M VillasboasAbstract:InAs quantum dot structures grown on InGaAlAs have been investigated for midinfrared photodetection. Intraband photocurrent and absorption measurements, together with a full three-dimensional theoretical modeling revealed that a bound-to-bound optical transition, where the final state is about 200meV deep below the conduction band continuum, is responsible for the photogenerated current. The reported results strongly suggest that an Auger process plays a fundamental role in generating the observed intraband photocurrent. Photoluminescence and interband photocurrent spectra of the same structures further support the reached conclusions.
G Allan - One of the best experts on this subject based on the ideXlab platform.
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saturation and voltage quenching of porous silicon luminescence and the importance of the Auger Effect
Physical Review B, 1995Co-Authors: I Mihalcescu, J C Vial, A Bsiesy, F Muller, R Romestain, E Martin, C Delerue, M Lannoo, G AllanAbstract:Two important observations for porous silicon, the saturation and the voltage selective quenching of photoluminescence, are presented. Their similarities are pointed out and discussed in two phenomenological models: the saturation of the absorption and an Auger Effect. The consequences of carrier accumulation in quantum crystallites are emphasized in both cases. The rate of Auger recombination in quantum crystallites is calculated theoretically and is compared to experiments. The importance of the Auger Effect is then checked in the mechanisms of the voltage tunable electroluminescence.
J M Villasboas - One of the best experts on this subject based on the ideXlab platform.
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intraband Auger Effect in inas ingaalas inp quantum dot structures
Applied Physics Letters, 2008Co-Authors: T. Gebhard, Karl Unterrainer, D. Alvarenga, Paulo Sérgio Soares Guimarães, Mauricio P. Pires, G. S. Vieira, Patricia L. Souza, J M VillasboasAbstract:InAs quantum dot structures grown on InGaAlAs have been investigated for midinfrared photodetection. Intraband photocurrent and absorption measurements, together with a full three-dimensional theoretical modeling revealed that a bound-to-bound optical transition, where the final state is about 200meV deep below the conduction band continuum, is responsible for the photogenerated current. The reported results strongly suggest that an Auger process plays a fundamental role in generating the observed intraband photocurrent. Photoluminescence and interband photocurrent spectra of the same structures further support the reached conclusions.
