The Experts below are selected from a list of 174 Experts worldwide ranked by ideXlab platform
Paul H. Holloway - One of the best experts on this subject based on the ideXlab platform.
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Carbon Auger Peak shape measurements in the characterization of reactions on (001) diamond
Applied Surface Science, 1996Co-Authors: P.e. Viljoen, W.d. Roos, H.c. Swart, Paul H. HollowayAbstract:Abstract The measurements of Auger shape changes and Peak shifts as a fingerprint for chemical changes on solid surfaces are well known. The carbon Auger Peak shape changes have been measured to characterize reactions on a (001) diamond single crystal surface. Firstly the influence of Ar + ion sputtering on the diamond surface was investigated. Upon sputtering the surface, the carbon Auger Peak shape changes from the typical diamond to the graphite form within about one minute sputtering. The Peak form change with time has been correlated with different diamond and graphite contributions. The decrease of the diamond contribution with sputter time has been described in terms of a transition probability of the carbon sp 3 to sp 2 bond. Secondly the formation of TiC at the interface of a Ti overlayer and the diamond substrate upon annealing, in order to produce good and stable ohmic contacts to the diamond, was confirmed by comparing the measured data with data simulated by calculation of the carbide and graphite contributions to the final carbon (KLL) Peak shape.
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Carbon Auger Peak shape measurements in the characterization of reactions on (001) diamond
Applied Surface Science, 1996Co-Authors: P.e. Viljoen, W.d. Roos, H.c. Swart, Paul H. HollowayAbstract:Applied Surface Science 100 (1996) 612-616. doi:10.1016/0169-4332(96)00349-22016-03-04T18:47:27
P.e. Viljoen - One of the best experts on this subject based on the ideXlab platform.
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Carbon Auger Peak shape measurements in the characterization of reactions on (001) diamond
Applied Surface Science, 1996Co-Authors: P.e. Viljoen, W.d. Roos, H.c. Swart, Paul H. HollowayAbstract:Abstract The measurements of Auger shape changes and Peak shifts as a fingerprint for chemical changes on solid surfaces are well known. The carbon Auger Peak shape changes have been measured to characterize reactions on a (001) diamond single crystal surface. Firstly the influence of Ar + ion sputtering on the diamond surface was investigated. Upon sputtering the surface, the carbon Auger Peak shape changes from the typical diamond to the graphite form within about one minute sputtering. The Peak form change with time has been correlated with different diamond and graphite contributions. The decrease of the diamond contribution with sputter time has been described in terms of a transition probability of the carbon sp 3 to sp 2 bond. Secondly the formation of TiC at the interface of a Ti overlayer and the diamond substrate upon annealing, in order to produce good and stable ohmic contacts to the diamond, was confirmed by comparing the measured data with data simulated by calculation of the carbide and graphite contributions to the final carbon (KLL) Peak shape.
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Carbon Auger Peak shape measurements in the characterization of reactions on (001) diamond
Applied Surface Science, 1996Co-Authors: P.e. Viljoen, W.d. Roos, H.c. Swart, Paul H. HollowayAbstract:Applied Surface Science 100 (1996) 612-616. doi:10.1016/0169-4332(96)00349-22016-03-04T18:47:27
Yasuji Kimoto - One of the best experts on this subject based on the ideXlab platform.
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x ray absorption spectroscopy to determine originating depth of electrons that form an inelastic background of Auger electron spectrum
Journal of Applied Physics, 2017Co-Authors: Noritake Isomura, Takaaki Murai, Hiroshi Oji, Yitao Cui, Yasuji KimotoAbstract:In Auger electron spectroscopy (AES), the spectral background is mainly due to inelastic scattering of Auger electrons that lose their kinetic energy in a sample bulk. To investigate the spectral components within this background for SiO2(19.3 nm)/Si(100) with known layer thickness, X-ray absorption spectroscopy (XAS) was used in the partial-electron-yield (PEY) mode at several electron kinetic energies to probe the background of the Si KLL Auger Peak. The Si K-edge PEY-XAS spectra constituted of both Si and SiO2 components at each kinetic energy, and their component fractions were approximately the same as those derived from the simulated AES background for the same sample structure. The contributions of Auger electrons originating from layers at different depths to the inelastic background could thus be identified experimentally.
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Chemical-state-selective X-ray absorption spectroscopy by detecting bond-specific Auger electrons for SiO2/SiC interface
Japanese Journal of Applied Physics, 2017Co-Authors: Noritake Isomura, Takaaki Murai, Hiroshi Oji, Toyokazu Nomoto, Yukihiko Watanabe, Yasuji KimotoAbstract:Chemical-state-selective Si K-edge extended X-ray absorption fine structure (EXAFS) measurements of SiO2 and SiC are demonstrated by detecting bond-specific Auger electrons in SiC coated with a very thin SiO2 film. Differential-electron-yield (DEY) mode is used for the measurements. Each EXAFS spectrum may be subject to the following two spectrally overlapping influences: (i) the background spectrum formed by energy-losing SiC Auger electrons overlaps the SiO2 Auger Peak, and (ii) the resonant SiO2 Auger Peak overlaps the SiC Auger Peak. The SiO2- and SiC-selective DEY–EXAFS spectra differ from each other and are similar to the spectra of bulk SiO2 and SiC, respectively, in the EXAFS regions, indicating that the two influences are negligible, and that this method can be considered valid for selection of chemical states.
H.c. Swart - One of the best experts on this subject based on the ideXlab platform.
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Carbon Auger Peak shape measurements in the characterization of reactions on (001) diamond
Applied Surface Science, 1996Co-Authors: P.e. Viljoen, W.d. Roos, H.c. Swart, Paul H. HollowayAbstract:Abstract The measurements of Auger shape changes and Peak shifts as a fingerprint for chemical changes on solid surfaces are well known. The carbon Auger Peak shape changes have been measured to characterize reactions on a (001) diamond single crystal surface. Firstly the influence of Ar + ion sputtering on the diamond surface was investigated. Upon sputtering the surface, the carbon Auger Peak shape changes from the typical diamond to the graphite form within about one minute sputtering. The Peak form change with time has been correlated with different diamond and graphite contributions. The decrease of the diamond contribution with sputter time has been described in terms of a transition probability of the carbon sp 3 to sp 2 bond. Secondly the formation of TiC at the interface of a Ti overlayer and the diamond substrate upon annealing, in order to produce good and stable ohmic contacts to the diamond, was confirmed by comparing the measured data with data simulated by calculation of the carbide and graphite contributions to the final carbon (KLL) Peak shape.
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Carbon Auger Peak shape measurements in the characterization of reactions on (001) diamond
Applied Surface Science, 1996Co-Authors: P.e. Viljoen, W.d. Roos, H.c. Swart, Paul H. HollowayAbstract:Applied Surface Science 100 (1996) 612-616. doi:10.1016/0169-4332(96)00349-22016-03-04T18:47:27
Noritake Isomura - One of the best experts on this subject based on the ideXlab platform.
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x ray absorption spectroscopy to determine originating depth of electrons that form an inelastic background of Auger electron spectrum
Journal of Applied Physics, 2017Co-Authors: Noritake Isomura, Takaaki Murai, Hiroshi Oji, Yitao Cui, Yasuji KimotoAbstract:In Auger electron spectroscopy (AES), the spectral background is mainly due to inelastic scattering of Auger electrons that lose their kinetic energy in a sample bulk. To investigate the spectral components within this background for SiO2(19.3 nm)/Si(100) with known layer thickness, X-ray absorption spectroscopy (XAS) was used in the partial-electron-yield (PEY) mode at several electron kinetic energies to probe the background of the Si KLL Auger Peak. The Si K-edge PEY-XAS spectra constituted of both Si and SiO2 components at each kinetic energy, and their component fractions were approximately the same as those derived from the simulated AES background for the same sample structure. The contributions of Auger electrons originating from layers at different depths to the inelastic background could thus be identified experimentally.
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Chemical-state-selective X-ray absorption spectroscopy by detecting bond-specific Auger electrons for SiO2/SiC interface
Japanese Journal of Applied Physics, 2017Co-Authors: Noritake Isomura, Takaaki Murai, Hiroshi Oji, Toyokazu Nomoto, Yukihiko Watanabe, Yasuji KimotoAbstract:Chemical-state-selective Si K-edge extended X-ray absorption fine structure (EXAFS) measurements of SiO2 and SiC are demonstrated by detecting bond-specific Auger electrons in SiC coated with a very thin SiO2 film. Differential-electron-yield (DEY) mode is used for the measurements. Each EXAFS spectrum may be subject to the following two spectrally overlapping influences: (i) the background spectrum formed by energy-losing SiC Auger electrons overlaps the SiO2 Auger Peak, and (ii) the resonant SiO2 Auger Peak overlaps the SiC Auger Peak. The SiO2- and SiC-selective DEY–EXAFS spectra differ from each other and are similar to the spectra of bulk SiO2 and SiC, respectively, in the EXAFS regions, indicating that the two influences are negligible, and that this method can be considered valid for selection of chemical states.