The Experts below are selected from a list of 219 Experts worldwide ranked by ideXlab platform

Salman Abdullah - One of the best experts on this subject based on the ideXlab platform.

Xinxin Zhou - One of the best experts on this subject based on the ideXlab platform.

Chee Hing Tan - One of the best experts on this subject based on the ideXlab platform.

  • Data from: Thin Al1-xGaxAs0.56Sb0.44 diodes with extremely weak temperature dependence of Avalanche Breakdown
    2018
    Co-Authors: Xinxin Zhou, Chee Hing Tan, Shiyong Zhang, Manuel Moreno, Shiyu Xie, Salman Abdullah
    Abstract:

    This file includes all the raw data for figures in Manuscript (Thin Al1-xGaxAs0.56Sb0.44 diodes with extremely weak temperature dependence of Avalanche Breakdown) submitted to Royal Society Open Science

  • Thin Al1−xGaxAs0.56Sb0.44 diodes with extremely weak temperature dependence of Avalanche Breakdown
    Royal Society open science, 2017
    Co-Authors: Xinxin Zhou, Chee Hing Tan, Shiyong Zhang, Manuel Moreno, Shiyu Xie, Salman Abdullah
    Abstract:

    When using Avalanche photodiodes (APDs) in applications, temperature dependence of Avalanche Breakdown voltage is one of the performance parameters to be considered. Hence, novel materials develope...

  • thin al1 xgaxas0 56sb0 44 diodes with extremely weak temperature dependence of Avalanche Breakdown
    Royal Society Open Science, 2017
    Co-Authors: Xinxin Zhou, Chee Hing Tan, Shiyong Zhang, Manuel Moreno, Shiyu Xie, Salman Abdullah
    Abstract:

    When using Avalanche photodiodes (APDs) in applications, temperature dependence of Avalanche Breakdown voltage is one of the performance parameters to be considered. Hence, novel materials develope...

  • Simulations of Avalanche Breakdown statistics: probability and timing
    Advanced Photon Counting Techniques IV, 2010
    Co-Authors: Chee Hing Tan, John P. R. David
    Abstract:

    Important Avalanche Breakdown statistics for Single Photon Avalanche Diodes (SPADs), such as Avalanche Breakdown probability, dark count rate, and the distribution of time taken to reach Breakdown (providing mean time to Breakdown and jitter), were simulated. These simulations enable unambiguous studies on effects of Avalanche region width, ionization coefficient ratio and carrier dead space on the Avalanche statistics, which are the fundamental limits of the SPADs. The effects of quenching resistor/circuit have been ignored. Due to competing effects between dead spaces, which are significant in modern SPADs with narrow Avalanche regions, and converging ionization coefficients, the Breakdown probability versus overbias characteristics from different Avalanche region widths are fairly close to each other. Concerning Avalanche Breakdown timing at given value of Breakdown probability, using Avalanche material with similar ionization coefficients yields fast Avalanche Breakdowns with small timing jitter (albeit higher operating field), compared to material with dissimilar ionization coefficients. This is the opposite requirement for abrupt Breakdown probability versus overbias characteristics. In addition, by taking band-to-band tunneling current (dark carriers) into account, minimum Avalanche region width for practical SPADs was found to be 0.3 and 0.2 μm, for InP and InAlAs, respectively.

  • Temperature Dependence of Avalanche Breakdown in InP and InAlAs
    IEEE Journal of Quantum Electronics, 2010
    Co-Authors: L.j.j. Tan, Daniel Swee Guan Ong, Chee Hing Tan, Stephen K Jones, Yahong Qian, John P. R. David
    Abstract:

    Simple analytical expressions for temperature coefficients of Breakdown voltage of Avalanche photodiodes (APDs) utilizing InP or InAlAs are reported. The work is based on measurements of temperature dependence of Avalanche Breakdown voltage in a series of InP and InAlAs diodes at temperatures between 20 and 375 K. While Avalanche Breakdown voltage becomes more temperature sensitive with Avalanche region thickness for both materials, the InAlAs diodes are less sensitive to temperature changes compared to InP diodes.

H Akinaga - One of the best experts on this subject based on the ideXlab platform.

  • magnetic field controllable Avalanche Breakdown and giant magnetoresistive effects in gold semi insulating gaas schottky diode
    Applied Physics Letters, 2004
    Co-Authors: Z G Sun, Masaki Mizuguchi, Takashi Manago, H Akinaga
    Abstract:

    Gold (Au)∕semi-insulating (SI)-GaAs Schottky diode was fabricated by the standard photolithography method using wet etching. Magnetic-field-dependent Avalanche Breakdown phenomena were observed in the current–voltage curves measured under magnetic field. The Avalanche Breakdown due to impact ionization was postponed to higher electrical field under applied magnetic field. Accordingly, threshold voltages of Avalanche Breakdown increased with the applied magnetic field. Above 0.2T, Avalanche Breakdown was totally quenched. When Au‐SI‐GaAs Schottky diode was operated above the threshold voltage, giant mangetoresistive effects up to 100 000% were achieved under magnetic field of 0.8T.

  • Magnetic-field-controllable Avalanche Breakdown and giant magnetoresistive effects in Gold∕semi-insulating-GaAs Schottky diode
    Applied Physics Letters, 2004
    Co-Authors: Z G Sun, Masaki Mizuguchi, Takashi Manago, H Akinaga
    Abstract:

    Gold (Au)∕semi-insulating (SI)-GaAs Schottky diode was fabricated by the standard photolithography method using wet etching. Magnetic-field-dependent Avalanche Breakdown phenomena were observed in the current–voltage curves measured under magnetic field. The Avalanche Breakdown due to impact ionization was postponed to higher electrical field under applied magnetic field. Accordingly, threshold voltages of Avalanche Breakdown increased with the applied magnetic field. Above 0.2T, Avalanche Breakdown was totally quenched. When Au‐SI‐GaAs Schottky diode was operated above the threshold voltage, giant mangetoresistive effects up to 100 000% were achieved under magnetic field of 0.8T.

Shiyong Zhang - One of the best experts on this subject based on the ideXlab platform.