Band-Gap Material

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Tokio Nakada - One of the best experts on this subject based on the ideXlab platform.

  • development of thin film solar cells using solar spectrum splitting technique
    Solar Energy Materials and Solar Cells, 2013
    Co-Authors: Shunsuke Kasashima, Tokio Nakada, Porponth Sichanugrist, Taizo Kobayashi, Makoto Konagai
    Abstract:

    Abstract To increase the performance of thin-film solar cells, the solar spectrum splitting technique has been considered and studied. It was found from simulations that the total efficiency of nearly 25% can be obtained at the splitting wavelength of 600 nm with the top cell using higher band gap Material. Experiments have been carried out to verify the simulation results. Up to now the total efficiency of about 22.0% has been obtained using a-Si:H and Cu(In 1− x ,Ga x )Se 2 as the top and bottom cells, respectively, at the splitting wavelength of 614 nm which is similar to the simulation results. This result shows that our developed splitting technique is promising for high-performance thin-film solar cells.

  • 18 efficiency cd free cu in ga se2 thin film solar cells fabricated using chemical bath deposition cbd zns buffer layers
    Japanese Journal of Applied Physics, 2002
    Co-Authors: Tokio Nakada, Masayuki Mizutani
    Abstract:

    Cadmium-free high efficiency Cu(In, Ga)Se2 (CIGS) thin-film solar cells have been fabricated using chemical bath deposition (CBD)-ZnS buffer layers. The use of CBD-ZnS, which is a wider band gap Material than CBD-CdS, improved the quantum efficiency at short wavelengths, resulting in an increase in the short circuit current of fabricated solar cells. The best cell at present yielded an active area efficiency of 18.1%, which is the highest value reported previously for CIGS thin film solar cells with alternative buffer layers to CdS.

  • high efficiency cu in ga se2 thin film solar cells with a cbd zns buffer layer
    Solar Energy Materials and Solar Cells, 2001
    Co-Authors: Tokio Nakada, Masayuki Mizutani, Y Hagiwara, Akio Kunioka
    Abstract:

    High-efficiency cadmium-free Cu(In,Ga)Se2 (CIGS) thin-film solar cells have been fabricated using a chemical bath deposition (CBD)-ZnS buffer layer, a wider band gap Material than of conventional CBD-CdS. Energy dispersive X-ray microanalysis (EDX) revealed Zn interdiffusion in the CIGS thin film at the CBD-ZnS/CIGS solar cell interface, implying formation of a buried np junction at the surface of the CIGS film. The best cell to date yielded an active area efficiency of 17.2% after light soaking. This result suggests that CIGS solar cells with efficiencies as high as those fabricated using CdS buffer can be achieved even if Cd is not utilized.

  • high efficiency cadmium free cu in ga se sub 2 thin film solar cells with chemically deposited zns buffer layers
    IEEE Transactions on Electron Devices, 1999
    Co-Authors: Tokio Nakada, K Furumi, Akio Kunioka
    Abstract:

    Cadmium-free Cu(In,Ga)Se/sub 2/ (CICS) thin-film solar cells with a MgF/sub 2//ZnO:Al/CBD-ZnS/CIGS/Mo/SLG structure have been fabricated using chemical bath deposition (CBD)-ZnS buffer layers and high-quality CICS absorber layers grown using molecular beam epitaxy (MBE) system. The use of CBD-ZnS, which is a wider band gap Material than CBD-CdS, improved the quantum efficiency of fabricated cells at short wavelengths, leading to an increase in the short-circuit current. The best cell at present yielded an active area efficiency of 16.9% which is the highest value reported previously for Cd-free CIGS thin-film solar cells. The as-fabricated solar cells exhibited a reversible light-soaking effect under AM 1.5, 100 mW/cm/sup 2/ illumination. This paper also presents a discussion of the issues relating to the use of the CBD-ZnS buffer Material for improving device performance.

Akio Kunioka - One of the best experts on this subject based on the ideXlab platform.

  • high efficiency cu in ga se2 thin film solar cells with a cbd zns buffer layer
    Solar Energy Materials and Solar Cells, 2001
    Co-Authors: Tokio Nakada, Masayuki Mizutani, Y Hagiwara, Akio Kunioka
    Abstract:

    High-efficiency cadmium-free Cu(In,Ga)Se2 (CIGS) thin-film solar cells have been fabricated using a chemical bath deposition (CBD)-ZnS buffer layer, a wider band gap Material than of conventional CBD-CdS. Energy dispersive X-ray microanalysis (EDX) revealed Zn interdiffusion in the CIGS thin film at the CBD-ZnS/CIGS solar cell interface, implying formation of a buried np junction at the surface of the CIGS film. The best cell to date yielded an active area efficiency of 17.2% after light soaking. This result suggests that CIGS solar cells with efficiencies as high as those fabricated using CdS buffer can be achieved even if Cd is not utilized.

  • high efficiency cadmium free cu in ga se sub 2 thin film solar cells with chemically deposited zns buffer layers
    IEEE Transactions on Electron Devices, 1999
    Co-Authors: Tokio Nakada, K Furumi, Akio Kunioka
    Abstract:

    Cadmium-free Cu(In,Ga)Se/sub 2/ (CICS) thin-film solar cells with a MgF/sub 2//ZnO:Al/CBD-ZnS/CIGS/Mo/SLG structure have been fabricated using chemical bath deposition (CBD)-ZnS buffer layers and high-quality CICS absorber layers grown using molecular beam epitaxy (MBE) system. The use of CBD-ZnS, which is a wider band gap Material than CBD-CdS, improved the quantum efficiency of fabricated cells at short wavelengths, leading to an increase in the short-circuit current. The best cell at present yielded an active area efficiency of 16.9% which is the highest value reported previously for Cd-free CIGS thin-film solar cells. The as-fabricated solar cells exhibited a reversible light-soaking effect under AM 1.5, 100 mW/cm/sup 2/ illumination. This paper also presents a discussion of the issues relating to the use of the CBD-ZnS buffer Material for improving device performance.

William M. Robertson - One of the best experts on this subject based on the ideXlab platform.

  • Biosensing using surface electromagnetic waves in photonic band gap multilayers
    Sensors and Actuators B: Chemical, 2012
    Co-Authors: Adam Farmer, Andrienne C. Friedli, Stephen M. Wright, William M. Robertson
    Abstract:

    Abstract A biosensor based on the excitation of surface electromagnetic waves in photonic band gap multilayer films is demonstrated. The operating principle of this device is similar to surface plasmon biosensors with the key difference that a photonic band gap film replaces the metal film as the medium in which surface electromagnetic waves are excited. The use of photonic band gap films offers a number of advantages. First, the surface wave resonance is much sharper leading to the potential of greatly enhanced sensitivity. Second, the properties of the photonic band gap Material can be engineered to make a sensor that operates at any wavelength. The experiments reported here are conducted with a surface wave resonance at 470 nm, a wavelength not generally accessible with surface plasmon sensing. Finally, the photonic band gap films are more mechanically robust than metal films and they offer new substrates for surface chemistry. The paper describes the design of the photonic band gap films, the surface chemistry and biology to create sensing chips, and the spectroscopic experimental configuration used to observe and track the surface mode resonance. Experimental results are presented on refractive index sensing, antibody–antigen reactions, and DNA binding.

  • surface plasmon like sensor based on surface electromagnetic waves in a photonic band gap Material
    Sensors and Actuators B-chemical, 2005
    Co-Authors: M Shinn, William M. Robertson
    Abstract:

    Abstract The design and operating principles of a new type of surface electromagnetic wave sensor are described and demonstrated. The method of operation of this device is similar to surface plasmon sensors except that the surface-active Material—a metal film in the case of surface plasmon sensors—is replaced by a one-dimensional photonic Band-Gap array. The advantages of using a photonic Band-Gap Material instead of a metal film include enhanced sensitivity, physical, and chemical robustness, and the ability to engineer the optical response of the surface active layer to create a device that operates at any optical wavelength. Experimental results are presented that illustrate sensing action by measuring the shift in the surface mode coupling angle with surface loading.

Masayuki Mizutani - One of the best experts on this subject based on the ideXlab platform.

  • 18 efficiency cd free cu in ga se2 thin film solar cells fabricated using chemical bath deposition cbd zns buffer layers
    Japanese Journal of Applied Physics, 2002
    Co-Authors: Tokio Nakada, Masayuki Mizutani
    Abstract:

    Cadmium-free high efficiency Cu(In, Ga)Se2 (CIGS) thin-film solar cells have been fabricated using chemical bath deposition (CBD)-ZnS buffer layers. The use of CBD-ZnS, which is a wider band gap Material than CBD-CdS, improved the quantum efficiency at short wavelengths, resulting in an increase in the short circuit current of fabricated solar cells. The best cell at present yielded an active area efficiency of 18.1%, which is the highest value reported previously for CIGS thin film solar cells with alternative buffer layers to CdS.

  • high efficiency cu in ga se2 thin film solar cells with a cbd zns buffer layer
    Solar Energy Materials and Solar Cells, 2001
    Co-Authors: Tokio Nakada, Masayuki Mizutani, Y Hagiwara, Akio Kunioka
    Abstract:

    High-efficiency cadmium-free Cu(In,Ga)Se2 (CIGS) thin-film solar cells have been fabricated using a chemical bath deposition (CBD)-ZnS buffer layer, a wider band gap Material than of conventional CBD-CdS. Energy dispersive X-ray microanalysis (EDX) revealed Zn interdiffusion in the CIGS thin film at the CBD-ZnS/CIGS solar cell interface, implying formation of a buried np junction at the surface of the CIGS film. The best cell to date yielded an active area efficiency of 17.2% after light soaking. This result suggests that CIGS solar cells with efficiencies as high as those fabricated using CdS buffer can be achieved even if Cd is not utilized.

Ping Sheng - One of the best experts on this subject based on the ideXlab platform.

  • three component elastic wave band gap Material
    Physical Review B, 2002
    Co-Authors: Zhengyou Liu, Che Ting Chan, Ping Sheng
    Abstract:

    Using multiple-scattering theory, we consider the elastic wave Band-Gap properties of three-component composites consisting of a periodic arrangement of coated spheres inside an embedding medium. We found that the elastic wave Band-Gap properties can be tuned continuously from a resonance gap to a Bragg gap just by varying the elastic properties of one component. If the coating Material is soft compared to the core and the matrix, the elastic wave band gap is essentially a resonance gap. If the coating Material is stiff, the elastic wave gap is derived from Bragg scattering. These systems are ideal for realizing elastic wave gap and wave localization as well as understanding the underlying mechanism.