The Experts below are selected from a list of 24552 Experts worldwide ranked by ideXlab platform
Hossein Hashemi - One of the best experts on this subject based on the ideXlab platform.
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silicon based ultra wideband Beam Forming
IEEE Journal of Solid-state Circuits, 2006Co-Authors: Jonathan Roderick, Harish Krishnaswamy, Kenneth Newton, Hossein HashemiAbstract:Ultra-wideband (UWB) Beam-Forming, a special class of multiple-antenna systems, allows for high azimuth and depth resolutions in ranging and imaging applications. This paper reports a fully integrated UWB Beam-former featuring controllable true time delay and power gain. Several system and circuit level parameters and characterization methods influencing the design and testing of UWB Beam-formers are discussed. A UWB Beam-former prototype for imaging applications has been fabricated with the potential to yield 20 mm of range resolution and a 7deg angular resolution from a four-element array with 10 mm element spacing. The UWB Beam-former accomplishes a 4-bit delay variation for a total of 64 ps of achievable group delay with a 4-ps resolution, a 5-dB gain variation in 1-dB steps, and a worst case -3-dB gain bandwidth of 13 GHz. Overall operation is achieved by the integration of a 3-bit tapped delay trombone-type structure with a 4-ps variable delay resolution, a 1-bit, 32-ps fixed delay coplanar-type structure, and a variable-gain distributed amplifier. The prototype chip fabricated in a 0.18 mum BiCMOS SiGe process occupies 1.6 mm2 of silicon area and consumes 87.5 mW from a 2.5-V supply at the maximum gain setting of 10 dB
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silicon based ultra wideband Beam Forming
Custom Integrated Circuits Conference, 2006Co-Authors: Jonathan Roderick, Harish Krishnaswamy, Kenneth Newton, Hossein HashemiAbstract:Ultra-wideband (UWB) Beam-Forming, a special class of multiple-antenna systems, allows for high azimuth and depth resolutions in ranging and imaging applications. This paper reports a fully integrated UWB Beam-former featuring controllable true time delay and power gain. Several system and circuit level parameters and characterization methods influencing the design and testing of UWB Beam-formers are discussed. A UWB Beam-former prototype for imaging applications has been fabricated with the potential to yield 20 mm of range resolution and a 7° angular resolution from a four-element array with 10 mm element spacing. The UWB Beam-former accomplishes a 4-bit delay variation for a total of 64 ps of achievable group delay with a 4-ps resolution, a 5-dB gain variation in 1-dB steps, and a worst case -3-dB gain bandwidth of 13 GHz. Overall operation is achieved by the integration of a 3-bit tapped delay trombone-type structure with a 4-ps variable delay resolution, a 1-bit, 32-ps fixed delay coplanar-type structure, and a variable-gain distributed amplifier. The prototype chip fabricated in a 0.18 μm BiCMOS SiGe process occupies 1.6 mm 2 of silicon area and consumes 87.5 mW from a 2.5-V supply at the maximum gain setting of 10 dB.
Youngwoo Kwon - One of the best experts on this subject based on the ideXlab platform.
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a v band switched Beam Forming antenna module using absorptive switch integrated with 4 times 4 butler matrix in 0 13 mu hbox m cmos
IEEE Transactions on Microwave Theory and Techniques, 2010Co-Authors: Wooyeol Choi, K W Park, Youngwoo KwonAbstract:A Beam-Forming antenna module is demonstrated using an integrated CMOS Beam-former chip and a simple two-metal layer printed circuit board at V-band. The Beam-former circuit integrates an absorptive single-pole four-throw switch together with a 4 × 4 Butler matrix using a 0.13-μm CMOS process. The entire insertion loss of the integrated Beam former integrated circuit (IC) is around 7.5 dB at 60 GHz, among which 3 dB is attributed to the Butler matrix. The overall phase error is within ±12%. The antenna module employs backside radiation structure using series-fed patch antenna arrays to suppress parasitic radiation. The measured radiation pattern shows good agreement with the simulation. To the best of our knowledge, this is the first demonstration of the Beam-Forming antenna module using a single-chip CMOS switched Beam-former IC at V-band.
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a v band switched Beam Forming network using absorptive sp4t switch integrated with 4 4 butler matrix in 0 13 µm cmos
International Microwave Symposium, 2010Co-Authors: K W Park, Wooyeol Choi, Youngwoo KwonAbstract:An integrated switched Beam Forming network is demonstrated at V-band by integrating an absorptive single-pole four-throw (SP4T) switch together with a 4×4 Butler matrix using 0.13 µm CMOS process. The fabricated absorptive SP4T switch shows a measured insertion loss of 4.5 dB at 60 GHz and isolation higher than 31 dB from 57 to 63 GHz. The return losses of the deactivated output ports also maintain better than 14 dB due to the absorptive configuration. The entire insertion loss of the integrated Beam former IC was around 7.5 dB at 60 GHz, among which 3 dB is attributed to Butler matrix. The overall phase error was within ±12%. The calculated array factor from the measured S-parameters shows that the Beam-Forming network generates four Beams at ±14°, ±54°. To the best of our knowledge, this is the first demonstration of CMOS switched Beam-Forming network integrating an absorptive SP4T switch and Butler matrix at V-band.
Jonathan Roderick - One of the best experts on this subject based on the ideXlab platform.
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silicon based ultra wideband Beam Forming
IEEE Journal of Solid-state Circuits, 2006Co-Authors: Jonathan Roderick, Harish Krishnaswamy, Kenneth Newton, Hossein HashemiAbstract:Ultra-wideband (UWB) Beam-Forming, a special class of multiple-antenna systems, allows for high azimuth and depth resolutions in ranging and imaging applications. This paper reports a fully integrated UWB Beam-former featuring controllable true time delay and power gain. Several system and circuit level parameters and characterization methods influencing the design and testing of UWB Beam-formers are discussed. A UWB Beam-former prototype for imaging applications has been fabricated with the potential to yield 20 mm of range resolution and a 7deg angular resolution from a four-element array with 10 mm element spacing. The UWB Beam-former accomplishes a 4-bit delay variation for a total of 64 ps of achievable group delay with a 4-ps resolution, a 5-dB gain variation in 1-dB steps, and a worst case -3-dB gain bandwidth of 13 GHz. Overall operation is achieved by the integration of a 3-bit tapped delay trombone-type structure with a 4-ps variable delay resolution, a 1-bit, 32-ps fixed delay coplanar-type structure, and a variable-gain distributed amplifier. The prototype chip fabricated in a 0.18 mum BiCMOS SiGe process occupies 1.6 mm2 of silicon area and consumes 87.5 mW from a 2.5-V supply at the maximum gain setting of 10 dB
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silicon based ultra wideband Beam Forming
Custom Integrated Circuits Conference, 2006Co-Authors: Jonathan Roderick, Harish Krishnaswamy, Kenneth Newton, Hossein HashemiAbstract:Ultra-wideband (UWB) Beam-Forming, a special class of multiple-antenna systems, allows for high azimuth and depth resolutions in ranging and imaging applications. This paper reports a fully integrated UWB Beam-former featuring controllable true time delay and power gain. Several system and circuit level parameters and characterization methods influencing the design and testing of UWB Beam-formers are discussed. A UWB Beam-former prototype for imaging applications has been fabricated with the potential to yield 20 mm of range resolution and a 7° angular resolution from a four-element array with 10 mm element spacing. The UWB Beam-former accomplishes a 4-bit delay variation for a total of 64 ps of achievable group delay with a 4-ps resolution, a 5-dB gain variation in 1-dB steps, and a worst case -3-dB gain bandwidth of 13 GHz. Overall operation is achieved by the integration of a 3-bit tapped delay trombone-type structure with a 4-ps variable delay resolution, a 1-bit, 32-ps fixed delay coplanar-type structure, and a variable-gain distributed amplifier. The prototype chip fabricated in a 0.18 μm BiCMOS SiGe process occupies 1.6 mm 2 of silicon area and consumes 87.5 mW from a 2.5-V supply at the maximum gain setting of 10 dB.
Wooyong Lee - One of the best experts on this subject based on the ideXlab platform.
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hybrid Beam Forming and Beam switching for ofdm based wireless personal area networks
IEEE Journal on Selected Areas in Communications, 2009Co-Authors: Seokhyun Yoon, Taehyun Jeon, Wooyong LeeAbstract:In this paper, we propose a hybrid Beam-Forming and Beam-switching technique for OFDM based wireless personal area networks (WPAN). In order to compromise between performance and computational cost and overheads for the channel side information feedback, the proposed system employs hybrid Beam-Forming and Beam-switching, where the block Beam-switching using a predefined Beam codebook is used at the transmitter while the optimum per-subcarrier Beam-Forming is used at the receiver. To verify the performance of the proposed scheme, the effective SNR gain over the single antenna transmission system is investigated along with the spectral efficiency bound for some of the channels developed by the IEEE 802.15.3c task group. For comparison, the performance of the optimum per-subcarrier Beam-Forming and the block Beam-switching are also examined.
Lauri Sydanheimo - One of the best experts on this subject based on the ideXlab platform.
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a 2 45 ghz digital Beam Forming antenna for rfid reader
Vehicular Technology Conference, 2002Co-Authors: P Salonen, Lauri SydanheimoAbstract:Spatial filtering using adaptive or smart antennas has emerged as a promising technique to improve the performance of cellular mobile systems. Due to the digital nature of the control of spatial filtering a quantization error is readily present. This is due to the fact that weights and phase information is provided with the aid of finite wordlength processors. This paper presents the development of a five-element digital Beam-Forming antenna for RFID (radio frequency identification) reader operating on the 2.4 GHz ISM-band. The paper presents a detailed description of the operation of Beam-form control including the analysis of 4-bit phase shifters. In addition, the result shows that the quantization error, even if it small, can degrade the pattern so dramatically making it unacceptable. However, we show that with as low number of control bits as four the desired radiation characteristics can be achieved.