The Experts below are selected from a list of 6039 Experts worldwide ranked by ideXlab platform
Mircea Guina - One of the best experts on this subject based on the ideXlab platform.
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low loss gainnas gaas gain waveguides with u Bend Geometry for single facet coupling in hybrid photonic integration
2018Co-Authors: Heidi Tuorila, Jukka Viheriälä, Matteo Cherchi, Timo Aalto, Antti T Aho, Mircea GuinaAbstract:We report a low loss U-Bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III–V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-Bend waveguides operating at 1.3 μm. In particular, we demonstrate a Bending loss as low as 1.1 dB for an 83 μm Bending radius. Efficient laser diode operation is also demonstrated.
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low loss gainnas gaas gain waveguides with u Bend Geometry for single facet coupling in hybrid photonic integration
2018Co-Authors: Heidi Tuorila, Jukka Viheriälä, Matteo Cherchi, Timo Aalto, Mircea GuinaAbstract:We report a low loss U-Bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III–V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-Bend waveguides operating at 1.3 μm. In particular, we demonstrate a Bending loss as low as 1.1 dB for an 83 μm Bending radius. Efficient laser diode operation is also demonstrated.We report a low loss U-Bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III–V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-Bend waveguides operating at 1.3 μm. In particular, we demonstrate a Bending loss as low as 1.1 dB for an 83 μm Bending radius. Efficient laser diode operation is also demonstrated.
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Semiconductor Optical Amplifier with U-Bend Geometry for Simplified Coupling to Silicon Photonics Waveguides
2018Co-Authors: Heidi Tuorila, Jukka Viheriälä, Matteo Cherchi, Timo Aalto, Mircea GuinaAbstract:We report a traveling-wave GaAs-based semiconductor optical amplifier operating at 1.3 μm with a U-Bend waveguide bringing the I/O ports on the same side of the chip. This architecture significantly simplifies hybrid integration and coupling to silicon-on-insulator waveguides.
Heidi Tuorila - One of the best experts on this subject based on the ideXlab platform.
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low loss gainnas gaas gain waveguides with u Bend Geometry for single facet coupling in hybrid photonic integration
2018Co-Authors: Heidi Tuorila, Jukka Viheriälä, Matteo Cherchi, Timo Aalto, Antti T Aho, Mircea GuinaAbstract:We report a low loss U-Bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III–V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-Bend waveguides operating at 1.3 μm. In particular, we demonstrate a Bending loss as low as 1.1 dB for an 83 μm Bending radius. Efficient laser diode operation is also demonstrated.
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low loss gainnas gaas gain waveguides with u Bend Geometry for single facet coupling in hybrid photonic integration
2018Co-Authors: Heidi Tuorila, Jukka Viheriälä, Matteo Cherchi, Timo Aalto, Mircea GuinaAbstract:We report a low loss U-Bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III–V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-Bend waveguides operating at 1.3 μm. In particular, we demonstrate a Bending loss as low as 1.1 dB for an 83 μm Bending radius. Efficient laser diode operation is also demonstrated.We report a low loss U-Bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III–V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-Bend waveguides operating at 1.3 μm. In particular, we demonstrate a Bending loss as low as 1.1 dB for an 83 μm Bending radius. Efficient laser diode operation is also demonstrated.
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Semiconductor Optical Amplifier with U-Bend Geometry for Simplified Coupling to Silicon Photonics Waveguides
2018Co-Authors: Heidi Tuorila, Jukka Viheriälä, Matteo Cherchi, Timo Aalto, Mircea GuinaAbstract:We report a traveling-wave GaAs-based semiconductor optical amplifier operating at 1.3 μm with a U-Bend waveguide bringing the I/O ports on the same side of the chip. This architecture significantly simplifies hybrid integration and coupling to silicon-on-insulator waveguides.
Timo Aalto - One of the best experts on this subject based on the ideXlab platform.
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low loss gainnas gaas gain waveguides with u Bend Geometry for single facet coupling in hybrid photonic integration
2018Co-Authors: Heidi Tuorila, Jukka Viheriälä, Matteo Cherchi, Timo Aalto, Antti T Aho, Mircea GuinaAbstract:We report a low loss U-Bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III–V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-Bend waveguides operating at 1.3 μm. In particular, we demonstrate a Bending loss as low as 1.1 dB for an 83 μm Bending radius. Efficient laser diode operation is also demonstrated.
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low loss gainnas gaas gain waveguides with u Bend Geometry for single facet coupling in hybrid photonic integration
2018Co-Authors: Heidi Tuorila, Jukka Viheriälä, Matteo Cherchi, Timo Aalto, Mircea GuinaAbstract:We report a low loss U-Bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III–V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-Bend waveguides operating at 1.3 μm. In particular, we demonstrate a Bending loss as low as 1.1 dB for an 83 μm Bending radius. Efficient laser diode operation is also demonstrated.We report a low loss U-Bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III–V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-Bend waveguides operating at 1.3 μm. In particular, we demonstrate a Bending loss as low as 1.1 dB for an 83 μm Bending radius. Efficient laser diode operation is also demonstrated.
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Semiconductor Optical Amplifier with U-Bend Geometry for Simplified Coupling to Silicon Photonics Waveguides
2018Co-Authors: Heidi Tuorila, Jukka Viheriälä, Matteo Cherchi, Timo Aalto, Mircea GuinaAbstract:We report a traveling-wave GaAs-based semiconductor optical amplifier operating at 1.3 μm with a U-Bend waveguide bringing the I/O ports on the same side of the chip. This architecture significantly simplifies hybrid integration and coupling to silicon-on-insulator waveguides.
Matteo Cherchi - One of the best experts on this subject based on the ideXlab platform.
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low loss gainnas gaas gain waveguides with u Bend Geometry for single facet coupling in hybrid photonic integration
2018Co-Authors: Heidi Tuorila, Jukka Viheriälä, Matteo Cherchi, Timo Aalto, Antti T Aho, Mircea GuinaAbstract:We report a low loss U-Bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III–V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-Bend waveguides operating at 1.3 μm. In particular, we demonstrate a Bending loss as low as 1.1 dB for an 83 μm Bending radius. Efficient laser diode operation is also demonstrated.
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low loss gainnas gaas gain waveguides with u Bend Geometry for single facet coupling in hybrid photonic integration
2018Co-Authors: Heidi Tuorila, Jukka Viheriälä, Matteo Cherchi, Timo Aalto, Mircea GuinaAbstract:We report a low loss U-Bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III–V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-Bend waveguides operating at 1.3 μm. In particular, we demonstrate a Bending loss as low as 1.1 dB for an 83 μm Bending radius. Efficient laser diode operation is also demonstrated.We report a low loss U-Bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III–V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-Bend waveguides operating at 1.3 μm. In particular, we demonstrate a Bending loss as low as 1.1 dB for an 83 μm Bending radius. Efficient laser diode operation is also demonstrated.
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Semiconductor Optical Amplifier with U-Bend Geometry for Simplified Coupling to Silicon Photonics Waveguides
2018Co-Authors: Heidi Tuorila, Jukka Viheriälä, Matteo Cherchi, Timo Aalto, Mircea GuinaAbstract:We report a traveling-wave GaAs-based semiconductor optical amplifier operating at 1.3 μm with a U-Bend waveguide bringing the I/O ports on the same side of the chip. This architecture significantly simplifies hybrid integration and coupling to silicon-on-insulator waveguides.
Jukka Viheriälä - One of the best experts on this subject based on the ideXlab platform.
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low loss gainnas gaas gain waveguides with u Bend Geometry for single facet coupling in hybrid photonic integration
2018Co-Authors: Heidi Tuorila, Jukka Viheriälä, Matteo Cherchi, Timo Aalto, Antti T Aho, Mircea GuinaAbstract:We report a low loss U-Bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III–V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-Bend waveguides operating at 1.3 μm. In particular, we demonstrate a Bending loss as low as 1.1 dB for an 83 μm Bending radius. Efficient laser diode operation is also demonstrated.
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low loss gainnas gaas gain waveguides with u Bend Geometry for single facet coupling in hybrid photonic integration
2018Co-Authors: Heidi Tuorila, Jukka Viheriälä, Matteo Cherchi, Timo Aalto, Mircea GuinaAbstract:We report a low loss U-Bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III–V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-Bend waveguides operating at 1.3 μm. In particular, we demonstrate a Bending loss as low as 1.1 dB for an 83 μm Bending radius. Efficient laser diode operation is also demonstrated.We report a low loss U-Bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III–V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-Bend waveguides operating at 1.3 μm. In particular, we demonstrate a Bending loss as low as 1.1 dB for an 83 μm Bending radius. Efficient laser diode operation is also demonstrated.
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Semiconductor Optical Amplifier with U-Bend Geometry for Simplified Coupling to Silicon Photonics Waveguides
2018Co-Authors: Heidi Tuorila, Jukka Viheriälä, Matteo Cherchi, Timo Aalto, Mircea GuinaAbstract:We report a traveling-wave GaAs-based semiconductor optical amplifier operating at 1.3 μm with a U-Bend waveguide bringing the I/O ports on the same side of the chip. This architecture significantly simplifies hybrid integration and coupling to silicon-on-insulator waveguides.