The Experts below are selected from a list of 9 Experts worldwide ranked by ideXlab platform
Kunihiko Kasama - One of the best experts on this subject based on the ideXlab platform.
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Optimization of dissolution-rate characteristics of chemically amplified positive resist
Advances in Resist Technology and Processing XII, 1995Co-Authors: Toshiro Itani, Haruo Iwasaki, Masashi Fujimoto, Hiroshi Yoshino, Kunihiko KasamaAbstract:The dissolution kinetics of a 3-component chemically amplified DUV positive resist (base resin; t-BOC protected polyhydroxystyrene, PAG; Benzenesulfonic Acid Derivative, dissolution inhibitor; t-BOC protected bisphenol A;) was investigated under various conditions. Particularly, the effects of the dissolution inhibitor on the dissolution rate characteristics together with the effect of the t-BOC protection ratio of the base resin were studied. Moreover, in order to obtain ideal dissolution characteristics, a resist profile simulation analysis was carried out. The dissolution rate contrast as well as the slope N of log(dissolution rate)-log(exposure dose) plots increased with increasing inhibitor concentrations. However, a very high inhibitor concentration induced a severe standing wave effect and T-topping profile, resulting in the deterioration of resist performance. Therefore, it was discovered that inhibitor concentration has an optimum value in this resist system. These results are similar to those of t-BOC protection ratio in base resin. According to resist simulation, the slope N was closely related to resist performance, but the dissolution rate contrast was not. A slope value of more than 15 was necessary for 0.25 micrometers patterning (focus margin > 1.3 micrometers ). In addition, the Acid diffusion length was one of the key factors: suitable diffusion length was essential for achieving a good resist profile; short diffusion length induces a severe standing wave profile and a long diffusion length deteriorates resolution capability. Based on the analysis of the dissolution characteristics and resist profile simulation, it was concluded that the optimization of the base resin structure and inhibitor concentration is effective for modifying the dissolution parameter. Moreover, it was also found that a steep slope (> 15), moderate dissolution contrast (approximately 10,000) and adequate Acid diffusion length (approximately 35) can bring about ideal dissolution characteristics leading to 0.25 micrometers pattern formation.
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Dissolution kinetics analysis for chemically amplified deep ultraviolet resist
Japanese Journal of Applied Physics, 1994Co-Authors: Toshiro Itani, Haruo Iwasaki, Masashi Fujimoto, Kunihiko KasamaAbstract:Dissolution kinetics of a chemically amplified deep-ultraviolet (DUV) positive resist, which consists of tert-butoxycarbonyl (t-BOC)-protected phenolic resin, Benzenesulfonic Acid Derivative as a photoAcid generator (PAG) and an additional dissolution inhibitor, has been investigated by focusing on the t-BOC-protected phenolic resin structure (t-BOC protection ratio/molecular weight M w) and postexposure bake (PEB) temperature. Based on the analysis of the dissolution rate curve and Arrhenius plots, it was concluded that only one mechanism, namely, the penetration of tetramethylammonium hydroxide (TMAH) developer into hydrophobic t-BOC resin, rules the dissolution kinetics. It was also found that a steep slope of the dissolution rate curve is very effective for improving resolution capability. Polymer structure, as well as the PEB condition, was optimized from the correlation between dissolution kinetics and resist performance, and good resist performance was realized.
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Dissolution characteristics optimization for chemically amplified positive resist
Advances in Resist Technology and Processing XI, 1994Co-Authors: Toshiro Itani, Haruo Iwasaki, Masashi Fujimoto, Kunihiko KasamaAbstract:Dissolution kinetics of a 3-component chemically amplified positive resist, which consists of t-BOC protected phenolic resin, Benzenesulfonic Acid Derivative as a PAG and an additional dissolution inhibitor, have been investigated under various conditions. Especially, the effects of t-BOC protection ratio and molecular weight of the base resin have been studied. In a previous paper, we reported that the dissolution rate R of a 2- component positive resist was determined by one rate determining step, i.e., developer penetration into hydrophobic t-BOC protected phenolic resin. Rapid formation of surface insoluble layer which induced T-toping profiles deteriorated its original resist performance. In this paper, we evaluated both t-BOC protection ratio and the molecular weight dependencies of the dissolution characteristics. The 3-component resist evaluated did not produce distinct T-topping profile when time duration between exposure and PEB was within 30 minutes.
Toshiro Itani - One of the best experts on this subject based on the ideXlab platform.
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Optimization of dissolution-rate characteristics of chemically amplified positive resist
Advances in Resist Technology and Processing XII, 1995Co-Authors: Toshiro Itani, Haruo Iwasaki, Masashi Fujimoto, Hiroshi Yoshino, Kunihiko KasamaAbstract:The dissolution kinetics of a 3-component chemically amplified DUV positive resist (base resin; t-BOC protected polyhydroxystyrene, PAG; Benzenesulfonic Acid Derivative, dissolution inhibitor; t-BOC protected bisphenol A;) was investigated under various conditions. Particularly, the effects of the dissolution inhibitor on the dissolution rate characteristics together with the effect of the t-BOC protection ratio of the base resin were studied. Moreover, in order to obtain ideal dissolution characteristics, a resist profile simulation analysis was carried out. The dissolution rate contrast as well as the slope N of log(dissolution rate)-log(exposure dose) plots increased with increasing inhibitor concentrations. However, a very high inhibitor concentration induced a severe standing wave effect and T-topping profile, resulting in the deterioration of resist performance. Therefore, it was discovered that inhibitor concentration has an optimum value in this resist system. These results are similar to those of t-BOC protection ratio in base resin. According to resist simulation, the slope N was closely related to resist performance, but the dissolution rate contrast was not. A slope value of more than 15 was necessary for 0.25 micrometers patterning (focus margin > 1.3 micrometers ). In addition, the Acid diffusion length was one of the key factors: suitable diffusion length was essential for achieving a good resist profile; short diffusion length induces a severe standing wave profile and a long diffusion length deteriorates resolution capability. Based on the analysis of the dissolution characteristics and resist profile simulation, it was concluded that the optimization of the base resin structure and inhibitor concentration is effective for modifying the dissolution parameter. Moreover, it was also found that a steep slope (> 15), moderate dissolution contrast (approximately 10,000) and adequate Acid diffusion length (approximately 35) can bring about ideal dissolution characteristics leading to 0.25 micrometers pattern formation.
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Dissolution kinetics analysis for chemically amplified deep ultraviolet resist
Japanese Journal of Applied Physics, 1994Co-Authors: Toshiro Itani, Haruo Iwasaki, Masashi Fujimoto, Kunihiko KasamaAbstract:Dissolution kinetics of a chemically amplified deep-ultraviolet (DUV) positive resist, which consists of tert-butoxycarbonyl (t-BOC)-protected phenolic resin, Benzenesulfonic Acid Derivative as a photoAcid generator (PAG) and an additional dissolution inhibitor, has been investigated by focusing on the t-BOC-protected phenolic resin structure (t-BOC protection ratio/molecular weight M w) and postexposure bake (PEB) temperature. Based on the analysis of the dissolution rate curve and Arrhenius plots, it was concluded that only one mechanism, namely, the penetration of tetramethylammonium hydroxide (TMAH) developer into hydrophobic t-BOC resin, rules the dissolution kinetics. It was also found that a steep slope of the dissolution rate curve is very effective for improving resolution capability. Polymer structure, as well as the PEB condition, was optimized from the correlation between dissolution kinetics and resist performance, and good resist performance was realized.
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Dissolution characteristics optimization for chemically amplified positive resist
Advances in Resist Technology and Processing XI, 1994Co-Authors: Toshiro Itani, Haruo Iwasaki, Masashi Fujimoto, Kunihiko KasamaAbstract:Dissolution kinetics of a 3-component chemically amplified positive resist, which consists of t-BOC protected phenolic resin, Benzenesulfonic Acid Derivative as a PAG and an additional dissolution inhibitor, have been investigated under various conditions. Especially, the effects of t-BOC protection ratio and molecular weight of the base resin have been studied. In a previous paper, we reported that the dissolution rate R of a 2- component positive resist was determined by one rate determining step, i.e., developer penetration into hydrophobic t-BOC protected phenolic resin. Rapid formation of surface insoluble layer which induced T-toping profiles deteriorated its original resist performance. In this paper, we evaluated both t-BOC protection ratio and the molecular weight dependencies of the dissolution characteristics. The 3-component resist evaluated did not produce distinct T-topping profile when time duration between exposure and PEB was within 30 minutes.
Haruo Iwasaki - One of the best experts on this subject based on the ideXlab platform.
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Optimization of dissolution-rate characteristics of chemically amplified positive resist
Advances in Resist Technology and Processing XII, 1995Co-Authors: Toshiro Itani, Haruo Iwasaki, Masashi Fujimoto, Hiroshi Yoshino, Kunihiko KasamaAbstract:The dissolution kinetics of a 3-component chemically amplified DUV positive resist (base resin; t-BOC protected polyhydroxystyrene, PAG; Benzenesulfonic Acid Derivative, dissolution inhibitor; t-BOC protected bisphenol A;) was investigated under various conditions. Particularly, the effects of the dissolution inhibitor on the dissolution rate characteristics together with the effect of the t-BOC protection ratio of the base resin were studied. Moreover, in order to obtain ideal dissolution characteristics, a resist profile simulation analysis was carried out. The dissolution rate contrast as well as the slope N of log(dissolution rate)-log(exposure dose) plots increased with increasing inhibitor concentrations. However, a very high inhibitor concentration induced a severe standing wave effect and T-topping profile, resulting in the deterioration of resist performance. Therefore, it was discovered that inhibitor concentration has an optimum value in this resist system. These results are similar to those of t-BOC protection ratio in base resin. According to resist simulation, the slope N was closely related to resist performance, but the dissolution rate contrast was not. A slope value of more than 15 was necessary for 0.25 micrometers patterning (focus margin > 1.3 micrometers ). In addition, the Acid diffusion length was one of the key factors: suitable diffusion length was essential for achieving a good resist profile; short diffusion length induces a severe standing wave profile and a long diffusion length deteriorates resolution capability. Based on the analysis of the dissolution characteristics and resist profile simulation, it was concluded that the optimization of the base resin structure and inhibitor concentration is effective for modifying the dissolution parameter. Moreover, it was also found that a steep slope (> 15), moderate dissolution contrast (approximately 10,000) and adequate Acid diffusion length (approximately 35) can bring about ideal dissolution characteristics leading to 0.25 micrometers pattern formation.
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Dissolution kinetics analysis for chemically amplified deep ultraviolet resist
Japanese Journal of Applied Physics, 1994Co-Authors: Toshiro Itani, Haruo Iwasaki, Masashi Fujimoto, Kunihiko KasamaAbstract:Dissolution kinetics of a chemically amplified deep-ultraviolet (DUV) positive resist, which consists of tert-butoxycarbonyl (t-BOC)-protected phenolic resin, Benzenesulfonic Acid Derivative as a photoAcid generator (PAG) and an additional dissolution inhibitor, has been investigated by focusing on the t-BOC-protected phenolic resin structure (t-BOC protection ratio/molecular weight M w) and postexposure bake (PEB) temperature. Based on the analysis of the dissolution rate curve and Arrhenius plots, it was concluded that only one mechanism, namely, the penetration of tetramethylammonium hydroxide (TMAH) developer into hydrophobic t-BOC resin, rules the dissolution kinetics. It was also found that a steep slope of the dissolution rate curve is very effective for improving resolution capability. Polymer structure, as well as the PEB condition, was optimized from the correlation between dissolution kinetics and resist performance, and good resist performance was realized.
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Dissolution characteristics optimization for chemically amplified positive resist
Advances in Resist Technology and Processing XI, 1994Co-Authors: Toshiro Itani, Haruo Iwasaki, Masashi Fujimoto, Kunihiko KasamaAbstract:Dissolution kinetics of a 3-component chemically amplified positive resist, which consists of t-BOC protected phenolic resin, Benzenesulfonic Acid Derivative as a PAG and an additional dissolution inhibitor, have been investigated under various conditions. Especially, the effects of t-BOC protection ratio and molecular weight of the base resin have been studied. In a previous paper, we reported that the dissolution rate R of a 2- component positive resist was determined by one rate determining step, i.e., developer penetration into hydrophobic t-BOC protected phenolic resin. Rapid formation of surface insoluble layer which induced T-toping profiles deteriorated its original resist performance. In this paper, we evaluated both t-BOC protection ratio and the molecular weight dependencies of the dissolution characteristics. The 3-component resist evaluated did not produce distinct T-topping profile when time duration between exposure and PEB was within 30 minutes.
Masashi Fujimoto - One of the best experts on this subject based on the ideXlab platform.
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Optimization of dissolution-rate characteristics of chemically amplified positive resist
Advances in Resist Technology and Processing XII, 1995Co-Authors: Toshiro Itani, Haruo Iwasaki, Masashi Fujimoto, Hiroshi Yoshino, Kunihiko KasamaAbstract:The dissolution kinetics of a 3-component chemically amplified DUV positive resist (base resin; t-BOC protected polyhydroxystyrene, PAG; Benzenesulfonic Acid Derivative, dissolution inhibitor; t-BOC protected bisphenol A;) was investigated under various conditions. Particularly, the effects of the dissolution inhibitor on the dissolution rate characteristics together with the effect of the t-BOC protection ratio of the base resin were studied. Moreover, in order to obtain ideal dissolution characteristics, a resist profile simulation analysis was carried out. The dissolution rate contrast as well as the slope N of log(dissolution rate)-log(exposure dose) plots increased with increasing inhibitor concentrations. However, a very high inhibitor concentration induced a severe standing wave effect and T-topping profile, resulting in the deterioration of resist performance. Therefore, it was discovered that inhibitor concentration has an optimum value in this resist system. These results are similar to those of t-BOC protection ratio in base resin. According to resist simulation, the slope N was closely related to resist performance, but the dissolution rate contrast was not. A slope value of more than 15 was necessary for 0.25 micrometers patterning (focus margin > 1.3 micrometers ). In addition, the Acid diffusion length was one of the key factors: suitable diffusion length was essential for achieving a good resist profile; short diffusion length induces a severe standing wave profile and a long diffusion length deteriorates resolution capability. Based on the analysis of the dissolution characteristics and resist profile simulation, it was concluded that the optimization of the base resin structure and inhibitor concentration is effective for modifying the dissolution parameter. Moreover, it was also found that a steep slope (> 15), moderate dissolution contrast (approximately 10,000) and adequate Acid diffusion length (approximately 35) can bring about ideal dissolution characteristics leading to 0.25 micrometers pattern formation.
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Dissolution kinetics analysis for chemically amplified deep ultraviolet resist
Japanese Journal of Applied Physics, 1994Co-Authors: Toshiro Itani, Haruo Iwasaki, Masashi Fujimoto, Kunihiko KasamaAbstract:Dissolution kinetics of a chemically amplified deep-ultraviolet (DUV) positive resist, which consists of tert-butoxycarbonyl (t-BOC)-protected phenolic resin, Benzenesulfonic Acid Derivative as a photoAcid generator (PAG) and an additional dissolution inhibitor, has been investigated by focusing on the t-BOC-protected phenolic resin structure (t-BOC protection ratio/molecular weight M w) and postexposure bake (PEB) temperature. Based on the analysis of the dissolution rate curve and Arrhenius plots, it was concluded that only one mechanism, namely, the penetration of tetramethylammonium hydroxide (TMAH) developer into hydrophobic t-BOC resin, rules the dissolution kinetics. It was also found that a steep slope of the dissolution rate curve is very effective for improving resolution capability. Polymer structure, as well as the PEB condition, was optimized from the correlation between dissolution kinetics and resist performance, and good resist performance was realized.
-
Dissolution characteristics optimization for chemically amplified positive resist
Advances in Resist Technology and Processing XI, 1994Co-Authors: Toshiro Itani, Haruo Iwasaki, Masashi Fujimoto, Kunihiko KasamaAbstract:Dissolution kinetics of a 3-component chemically amplified positive resist, which consists of t-BOC protected phenolic resin, Benzenesulfonic Acid Derivative as a PAG and an additional dissolution inhibitor, have been investigated under various conditions. Especially, the effects of t-BOC protection ratio and molecular weight of the base resin have been studied. In a previous paper, we reported that the dissolution rate R of a 2- component positive resist was determined by one rate determining step, i.e., developer penetration into hydrophobic t-BOC protected phenolic resin. Rapid formation of surface insoluble layer which induced T-toping profiles deteriorated its original resist performance. In this paper, we evaluated both t-BOC protection ratio and the molecular weight dependencies of the dissolution characteristics. The 3-component resist evaluated did not produce distinct T-topping profile when time duration between exposure and PEB was within 30 minutes.
Hiroshi Yoshino - One of the best experts on this subject based on the ideXlab platform.
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Optimization of dissolution-rate characteristics of chemically amplified positive resist
Advances in Resist Technology and Processing XII, 1995Co-Authors: Toshiro Itani, Haruo Iwasaki, Masashi Fujimoto, Hiroshi Yoshino, Kunihiko KasamaAbstract:The dissolution kinetics of a 3-component chemically amplified DUV positive resist (base resin; t-BOC protected polyhydroxystyrene, PAG; Benzenesulfonic Acid Derivative, dissolution inhibitor; t-BOC protected bisphenol A;) was investigated under various conditions. Particularly, the effects of the dissolution inhibitor on the dissolution rate characteristics together with the effect of the t-BOC protection ratio of the base resin were studied. Moreover, in order to obtain ideal dissolution characteristics, a resist profile simulation analysis was carried out. The dissolution rate contrast as well as the slope N of log(dissolution rate)-log(exposure dose) plots increased with increasing inhibitor concentrations. However, a very high inhibitor concentration induced a severe standing wave effect and T-topping profile, resulting in the deterioration of resist performance. Therefore, it was discovered that inhibitor concentration has an optimum value in this resist system. These results are similar to those of t-BOC protection ratio in base resin. According to resist simulation, the slope N was closely related to resist performance, but the dissolution rate contrast was not. A slope value of more than 15 was necessary for 0.25 micrometers patterning (focus margin > 1.3 micrometers ). In addition, the Acid diffusion length was one of the key factors: suitable diffusion length was essential for achieving a good resist profile; short diffusion length induces a severe standing wave profile and a long diffusion length deteriorates resolution capability. Based on the analysis of the dissolution characteristics and resist profile simulation, it was concluded that the optimization of the base resin structure and inhibitor concentration is effective for modifying the dissolution parameter. Moreover, it was also found that a steep slope (> 15), moderate dissolution contrast (approximately 10,000) and adequate Acid diffusion length (approximately 35) can bring about ideal dissolution characteristics leading to 0.25 micrometers pattern formation.