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Binomial Expansion

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B A Mamedov – 1st expert on this subject based on the ideXlab platform

  • evaluation of guseinov auxiliary function by the use of Binomial Expansion theorem
    TURKISH PHYSICAL SOCIETY 32ND INTERNATIONAL PHYSICS CONGRESS (TPS32), 2017
    Co-Authors: Ebru Copuroglu, B A Mamedov

    Abstract:

    In this work, a new approach is proposed for calculating Guseinov’s G−nsq(pa,p,pt) auxiliary function. The established formulae for Guseinov’s G−nsq(pa,p,pt) auxiliary functions are prime importance in accurate evaluation of two-electron multicenter molecular integrals over Slater type orbitals arising from combined Harthree-Fock-Roothaan equations. This analytical method based on the Binomial Expansion theorem and has provided accurate results for various ranges of parameters. The calculating results can be useful for electronic structure evaluations of the atoms and molecules.

  • unified analytical treatments of the two parameter fermi functions using Binomial Expansion theorem and incomplete gamma functions
    Solid State Communications, 2016
    Co-Authors: B A Mamedov, E Copuroglu

    Abstract:

    Abstract This work studies the current status of the theories of kinetic effects and electron transport phenomena in semiconductors and its application to the physics of semiconductors and numerical simulation studies. The studies of two-parameter Fermi functions have played a major role in the development of kinetic effects and electron transport phenomena in semiconductors. Also, this work introduces new approximations for analytical evaluation of the two-parameter Fermi functions. Efficient analytical calculation formulae of the two-parameter Fermi functions are possible for a wide range of its parameters. The accuracy of the obtained formulae have been confirmed by comparison with previously published results. The new approach is seen to be a significant improvement.

  • Unified analytical treatment for the current flow due to tunneling of electrons from metal into semiconductor
    Journal of Computational Electronics, 2013
    Co-Authors: S. Saygi, B A Mamedov

    Abstract:

    By the use of Binomial Expansion theorem the analytical treatments for the current flow due to tunneling of electron from the metal into the semiconductor are established. The obtained formulas can be useful in the analytical evaluation of the current density from the semiconductors to the metals. The method is general and easy for application. Numerical tests show that the obtained formulas provide higher accuracy and efficiency than the approximation methods in literature. The usefulness of the suggested method is confirmed by the concrete example.

Timothy S Norfolk – 2nd expert on this subject based on the ideXlab platform

  • zeros of sections of the Binomial Expansion
    arXiv: Complex Variables, 2009
    Co-Authors: Svante Janson, Timothy S Norfolk

    Abstract:

    We examine the asymptotic behaviour of the zeros of sections of the Binomial Expansion. That is, we consider the distribution of zeros of $\displaystyle B_{r,n}(z) = \sum_{k=0}^r {n \choose k} z^k$, where $1 \le r < n$.

  • zeros of sections of the Binomial Expansion
    Electronic Transactions on Numerical Analysis, 2009
    Co-Authors: Svante Janson, Timothy S Norfolk

    Abstract:

    We examine the asymptotic behavior of the zeros of sections of the Binomial Expansion, that is, we consider the distribution of zeros of Br,n(z) = Pr=0 ` n kz k , where 1 � rn.

E Copuroglu – 3rd expert on this subject based on the ideXlab platform

  • unified analytical treatments of the two parameter fermi functions using Binomial Expansion theorem and incomplete gamma functions
    Solid State Communications, 2016
    Co-Authors: B A Mamedov, E Copuroglu

    Abstract:

    Abstract This work studies the current status of the theories of kinetic effects and electron transport phenomena in semiconductors and its application to the physics of semiconductors and numerical simulation studies. The studies of two-parameter Fermi functions have played a major role in the development of kinetic effects and electron transport phenomena in semiconductors. Also, this work introduces new approximations for analytical evaluation of the two-parameter Fermi functions. Efficient analytical calculation formulae of the two-parameter Fermi functions are possible for a wide range of its parameters. The accuracy of the obtained formulae have been confirmed by comparison with previously published results. The new approach is seen to be a significant improvement.