The Experts below are selected from a list of 5988 Experts worldwide ranked by ideXlab platform
Takayuki Yano - One of the best experts on this subject based on the ideXlab platform.
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surface morphology and step instability on the 0001 c facet of physical vapor transport grown 4h sic single crystal Boules
Journal of Crystal Growth, 2015Co-Authors: Tomoki Yamaguchi, Shunsuke Sato, Noboru Ohtani, Masakazu Katsuno, Tatsuo Fujimoto, Shinya Sato, Hiroshi Tsuge, Kohei Ohtomo, Takayuki YanoAbstract:Abstract Surface morphologies on the (000 1 ¯ ) C facet of 4H–SiC Boules grown using the physical vapor transport method were examined in various scales (from millimeter to nanometer) using different types of microscopies such as differential interference contrast (DIC) optical microscopy and atomic force microscopy (AFM). DIC optical microscopic observation revealed that there are three distinct morphological regions at the growth front of the 4H–SiC Boules: the facetted region, non-facetted region and intermediate region between them. The local inclination of the facet surface from the {0001} basal plane increases toward the edge of the facetted region and then decreases in the intermediate region. AFM observations revealed that characteristic step structures were established in these two regions and that nitrogen doping significantly influenced the stability of the step structures. Based on the results, the formation mechanism of surface morphologies on the (000 1 ¯ ) C facet of 4H–SiC Boules is discussed.
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Observation of the Surface Morphology on the (0001)C Facet of 4H-SiC Boules
Materials Science Forum, 2015Co-Authors: Tomoki Yamaguchi, Shunsuke Sato, Noboru Ohtani, Masakazu Katsuno, Tatsuo Fujimoto, Shinya Sato, Hiroshi Tsuge, Takayuki YanoAbstract:The surface morphology on the (000-1)C facet of 4H-SiC Boules grown by the physical vapor transport method was examined in various scales (from millimeter to nanometer) using different types of microscopies such as differential interference contrast (DIC) optical microscopy and atomic force microscopy (AFM). The DIC optical microscope observation revealed that there exist three distinct morphological regions at the growth front of the 4H-SiC Boules; they are facetted, non-facetted, and the intermediate region between them. The local inclination of the facet surface from the (000-1) basal plane increases toward the facet edge and then decreases over the intermediate region. AFM observations revealed characteristic step structures in these two regions and also that they are significantly influenced by nitrogen-doping. Based on the results, the formation mechanism of the facet morphology on 4H-SiC Boules is discussed.
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Surface morphology and step instability on the (0001̄)C facet of physical vapor transport-grown 4H–SiC single crystal Boules
Journal of Crystal Growth, 2015Co-Authors: Tomoki Yamaguchi, Shunsuke Sato, Noboru Ohtani, Masakazu Katsuno, Tatsuo Fujimoto, Shinya Sato, Hiroshi Tsuge, Kohei Ohtomo, Takayuki YanoAbstract:Abstract Surface morphologies on the (000 1 ¯ ) C facet of 4H–SiC Boules grown using the physical vapor transport method were examined in various scales (from millimeter to nanometer) using different types of microscopies such as differential interference contrast (DIC) optical microscopy and atomic force microscopy (AFM). DIC optical microscopic observation revealed that there are three distinct morphological regions at the growth front of the 4H–SiC Boules: the facetted region, non-facetted region and intermediate region between them. The local inclination of the facet surface from the {0001} basal plane increases toward the edge of the facetted region and then decreases in the intermediate region. AFM observations revealed that characteristic step structures were established in these two regions and that nitrogen doping significantly influenced the stability of the step structures. Based on the results, the formation mechanism of surface morphologies on the (000 1 ¯ ) C facet of 4H–SiC Boules is discussed.
Tatsuo Fujimoto - One of the best experts on this subject based on the ideXlab platform.
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Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method
Materials Science Forum, 2018Co-Authors: Masashi Sonoda, Noboru Ohtani, Masakazu Katsuno, Shinya Sato, Hiroshi Tsuge, Kentaro Shioura, Takahiro Nakano, Tatsuo FujimotoAbstract:The defect structure at the growth front of 4H-SiC Boules grown using the physical vapor transport (PVT) method has been investigated using high resolution x-ray diffraction and x-ray topography. The crystal parameters such as the c-lattice constant exhibited characteristic variations across the growth front, which appeared to be caused by variation in surface morphology of the as-grown surface of the Boules rather than the defect structure underneath the surface. X-ray topography also revealed that basal plane dislocations are hardly nucleated at the growth front during PVT growth of 4H-SiC crystals.
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surface morphology and step instability on the 0001 c facet of physical vapor transport grown 4h sic single crystal Boules
Journal of Crystal Growth, 2015Co-Authors: Tomoki Yamaguchi, Shunsuke Sato, Noboru Ohtani, Masakazu Katsuno, Tatsuo Fujimoto, Shinya Sato, Hiroshi Tsuge, Kohei Ohtomo, Takayuki YanoAbstract:Abstract Surface morphologies on the (000 1 ¯ ) C facet of 4H–SiC Boules grown using the physical vapor transport method were examined in various scales (from millimeter to nanometer) using different types of microscopies such as differential interference contrast (DIC) optical microscopy and atomic force microscopy (AFM). DIC optical microscopic observation revealed that there are three distinct morphological regions at the growth front of the 4H–SiC Boules: the facetted region, non-facetted region and intermediate region between them. The local inclination of the facet surface from the {0001} basal plane increases toward the edge of the facetted region and then decreases in the intermediate region. AFM observations revealed that characteristic step structures were established in these two regions and that nitrogen doping significantly influenced the stability of the step structures. Based on the results, the formation mechanism of surface morphologies on the (000 1 ¯ ) C facet of 4H–SiC Boules is discussed.
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Observation of the Surface Morphology on the (0001)C Facet of 4H-SiC Boules
Materials Science Forum, 2015Co-Authors: Tomoki Yamaguchi, Shunsuke Sato, Noboru Ohtani, Masakazu Katsuno, Tatsuo Fujimoto, Shinya Sato, Hiroshi Tsuge, Takayuki YanoAbstract:The surface morphology on the (000-1)C facet of 4H-SiC Boules grown by the physical vapor transport method was examined in various scales (from millimeter to nanometer) using different types of microscopies such as differential interference contrast (DIC) optical microscopy and atomic force microscopy (AFM). The DIC optical microscope observation revealed that there exist three distinct morphological regions at the growth front of the 4H-SiC Boules; they are facetted, non-facetted, and the intermediate region between them. The local inclination of the facet surface from the (000-1) basal plane increases toward the facet edge and then decreases over the intermediate region. AFM observations revealed characteristic step structures in these two regions and also that they are significantly influenced by nitrogen-doping. Based on the results, the formation mechanism of the facet morphology on 4H-SiC Boules is discussed.
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Surface morphology and step instability on the (0001̄)C facet of physical vapor transport-grown 4H–SiC single crystal Boules
Journal of Crystal Growth, 2015Co-Authors: Tomoki Yamaguchi, Shunsuke Sato, Noboru Ohtani, Masakazu Katsuno, Tatsuo Fujimoto, Shinya Sato, Hiroshi Tsuge, Kohei Ohtomo, Takayuki YanoAbstract:Abstract Surface morphologies on the (000 1 ¯ ) C facet of 4H–SiC Boules grown using the physical vapor transport method were examined in various scales (from millimeter to nanometer) using different types of microscopies such as differential interference contrast (DIC) optical microscopy and atomic force microscopy (AFM). DIC optical microscopic observation revealed that there are three distinct morphological regions at the growth front of the 4H–SiC Boules: the facetted region, non-facetted region and intermediate region between them. The local inclination of the facet surface from the {0001} basal plane increases toward the edge of the facetted region and then decreases in the intermediate region. AFM observations revealed that characteristic step structures were established in these two regions and that nitrogen doping significantly influenced the stability of the step structures. Based on the results, the formation mechanism of surface morphologies on the (000 1 ¯ ) C facet of 4H–SiC Boules is discussed.
Tomoki Yamaguchi - One of the best experts on this subject based on the ideXlab platform.
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surface morphology and step instability on the 0001 c facet of physical vapor transport grown 4h sic single crystal Boules
Journal of Crystal Growth, 2015Co-Authors: Tomoki Yamaguchi, Shunsuke Sato, Noboru Ohtani, Masakazu Katsuno, Tatsuo Fujimoto, Shinya Sato, Hiroshi Tsuge, Kohei Ohtomo, Takayuki YanoAbstract:Abstract Surface morphologies on the (000 1 ¯ ) C facet of 4H–SiC Boules grown using the physical vapor transport method were examined in various scales (from millimeter to nanometer) using different types of microscopies such as differential interference contrast (DIC) optical microscopy and atomic force microscopy (AFM). DIC optical microscopic observation revealed that there are three distinct morphological regions at the growth front of the 4H–SiC Boules: the facetted region, non-facetted region and intermediate region between them. The local inclination of the facet surface from the {0001} basal plane increases toward the edge of the facetted region and then decreases in the intermediate region. AFM observations revealed that characteristic step structures were established in these two regions and that nitrogen doping significantly influenced the stability of the step structures. Based on the results, the formation mechanism of surface morphologies on the (000 1 ¯ ) C facet of 4H–SiC Boules is discussed.
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Observation of the Surface Morphology on the (0001)C Facet of 4H-SiC Boules
Materials Science Forum, 2015Co-Authors: Tomoki Yamaguchi, Shunsuke Sato, Noboru Ohtani, Masakazu Katsuno, Tatsuo Fujimoto, Shinya Sato, Hiroshi Tsuge, Takayuki YanoAbstract:The surface morphology on the (000-1)C facet of 4H-SiC Boules grown by the physical vapor transport method was examined in various scales (from millimeter to nanometer) using different types of microscopies such as differential interference contrast (DIC) optical microscopy and atomic force microscopy (AFM). The DIC optical microscope observation revealed that there exist three distinct morphological regions at the growth front of the 4H-SiC Boules; they are facetted, non-facetted, and the intermediate region between them. The local inclination of the facet surface from the (000-1) basal plane increases toward the facet edge and then decreases over the intermediate region. AFM observations revealed characteristic step structures in these two regions and also that they are significantly influenced by nitrogen-doping. Based on the results, the formation mechanism of the facet morphology on 4H-SiC Boules is discussed.
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Surface morphology and step instability on the (0001̄)C facet of physical vapor transport-grown 4H–SiC single crystal Boules
Journal of Crystal Growth, 2015Co-Authors: Tomoki Yamaguchi, Shunsuke Sato, Noboru Ohtani, Masakazu Katsuno, Tatsuo Fujimoto, Shinya Sato, Hiroshi Tsuge, Kohei Ohtomo, Takayuki YanoAbstract:Abstract Surface morphologies on the (000 1 ¯ ) C facet of 4H–SiC Boules grown using the physical vapor transport method were examined in various scales (from millimeter to nanometer) using different types of microscopies such as differential interference contrast (DIC) optical microscopy and atomic force microscopy (AFM). DIC optical microscopic observation revealed that there are three distinct morphological regions at the growth front of the 4H–SiC Boules: the facetted region, non-facetted region and intermediate region between them. The local inclination of the facet surface from the {0001} basal plane increases toward the edge of the facetted region and then decreases in the intermediate region. AFM observations revealed that characteristic step structures were established in these two regions and that nitrogen doping significantly influenced the stability of the step structures. Based on the results, the formation mechanism of surface morphologies on the (000 1 ¯ ) C facet of 4H–SiC Boules is discussed.
Masakazu Katsuno - One of the best experts on this subject based on the ideXlab platform.
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Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method
Materials Science Forum, 2018Co-Authors: Masashi Sonoda, Noboru Ohtani, Masakazu Katsuno, Shinya Sato, Hiroshi Tsuge, Kentaro Shioura, Takahiro Nakano, Tatsuo FujimotoAbstract:The defect structure at the growth front of 4H-SiC Boules grown using the physical vapor transport (PVT) method has been investigated using high resolution x-ray diffraction and x-ray topography. The crystal parameters such as the c-lattice constant exhibited characteristic variations across the growth front, which appeared to be caused by variation in surface morphology of the as-grown surface of the Boules rather than the defect structure underneath the surface. X-ray topography also revealed that basal plane dislocations are hardly nucleated at the growth front during PVT growth of 4H-SiC crystals.
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surface morphology and step instability on the 0001 c facet of physical vapor transport grown 4h sic single crystal Boules
Journal of Crystal Growth, 2015Co-Authors: Tomoki Yamaguchi, Shunsuke Sato, Noboru Ohtani, Masakazu Katsuno, Tatsuo Fujimoto, Shinya Sato, Hiroshi Tsuge, Kohei Ohtomo, Takayuki YanoAbstract:Abstract Surface morphologies on the (000 1 ¯ ) C facet of 4H–SiC Boules grown using the physical vapor transport method were examined in various scales (from millimeter to nanometer) using different types of microscopies such as differential interference contrast (DIC) optical microscopy and atomic force microscopy (AFM). DIC optical microscopic observation revealed that there are three distinct morphological regions at the growth front of the 4H–SiC Boules: the facetted region, non-facetted region and intermediate region between them. The local inclination of the facet surface from the {0001} basal plane increases toward the edge of the facetted region and then decreases in the intermediate region. AFM observations revealed that characteristic step structures were established in these two regions and that nitrogen doping significantly influenced the stability of the step structures. Based on the results, the formation mechanism of surface morphologies on the (000 1 ¯ ) C facet of 4H–SiC Boules is discussed.
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Observation of the Surface Morphology on the (0001)C Facet of 4H-SiC Boules
Materials Science Forum, 2015Co-Authors: Tomoki Yamaguchi, Shunsuke Sato, Noboru Ohtani, Masakazu Katsuno, Tatsuo Fujimoto, Shinya Sato, Hiroshi Tsuge, Takayuki YanoAbstract:The surface morphology on the (000-1)C facet of 4H-SiC Boules grown by the physical vapor transport method was examined in various scales (from millimeter to nanometer) using different types of microscopies such as differential interference contrast (DIC) optical microscopy and atomic force microscopy (AFM). The DIC optical microscope observation revealed that there exist three distinct morphological regions at the growth front of the 4H-SiC Boules; they are facetted, non-facetted, and the intermediate region between them. The local inclination of the facet surface from the (000-1) basal plane increases toward the facet edge and then decreases over the intermediate region. AFM observations revealed characteristic step structures in these two regions and also that they are significantly influenced by nitrogen-doping. Based on the results, the formation mechanism of the facet morphology on 4H-SiC Boules is discussed.
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Surface morphology and step instability on the (0001̄)C facet of physical vapor transport-grown 4H–SiC single crystal Boules
Journal of Crystal Growth, 2015Co-Authors: Tomoki Yamaguchi, Shunsuke Sato, Noboru Ohtani, Masakazu Katsuno, Tatsuo Fujimoto, Shinya Sato, Hiroshi Tsuge, Kohei Ohtomo, Takayuki YanoAbstract:Abstract Surface morphologies on the (000 1 ¯ ) C facet of 4H–SiC Boules grown using the physical vapor transport method were examined in various scales (from millimeter to nanometer) using different types of microscopies such as differential interference contrast (DIC) optical microscopy and atomic force microscopy (AFM). DIC optical microscopic observation revealed that there are three distinct morphological regions at the growth front of the 4H–SiC Boules: the facetted region, non-facetted region and intermediate region between them. The local inclination of the facet surface from the {0001} basal plane increases toward the edge of the facetted region and then decreases in the intermediate region. AFM observations revealed that characteristic step structures were established in these two regions and that nitrogen doping significantly influenced the stability of the step structures. Based on the results, the formation mechanism of surface morphologies on the (000 1 ¯ ) C facet of 4H–SiC Boules is discussed.
Shinya Sato - One of the best experts on this subject based on the ideXlab platform.
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Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method
Materials Science Forum, 2018Co-Authors: Masashi Sonoda, Noboru Ohtani, Masakazu Katsuno, Shinya Sato, Hiroshi Tsuge, Kentaro Shioura, Takahiro Nakano, Tatsuo FujimotoAbstract:The defect structure at the growth front of 4H-SiC Boules grown using the physical vapor transport (PVT) method has been investigated using high resolution x-ray diffraction and x-ray topography. The crystal parameters such as the c-lattice constant exhibited characteristic variations across the growth front, which appeared to be caused by variation in surface morphology of the as-grown surface of the Boules rather than the defect structure underneath the surface. X-ray topography also revealed that basal plane dislocations are hardly nucleated at the growth front during PVT growth of 4H-SiC crystals.
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surface morphology and step instability on the 0001 c facet of physical vapor transport grown 4h sic single crystal Boules
Journal of Crystal Growth, 2015Co-Authors: Tomoki Yamaguchi, Shunsuke Sato, Noboru Ohtani, Masakazu Katsuno, Tatsuo Fujimoto, Shinya Sato, Hiroshi Tsuge, Kohei Ohtomo, Takayuki YanoAbstract:Abstract Surface morphologies on the (000 1 ¯ ) C facet of 4H–SiC Boules grown using the physical vapor transport method were examined in various scales (from millimeter to nanometer) using different types of microscopies such as differential interference contrast (DIC) optical microscopy and atomic force microscopy (AFM). DIC optical microscopic observation revealed that there are three distinct morphological regions at the growth front of the 4H–SiC Boules: the facetted region, non-facetted region and intermediate region between them. The local inclination of the facet surface from the {0001} basal plane increases toward the edge of the facetted region and then decreases in the intermediate region. AFM observations revealed that characteristic step structures were established in these two regions and that nitrogen doping significantly influenced the stability of the step structures. Based on the results, the formation mechanism of surface morphologies on the (000 1 ¯ ) C facet of 4H–SiC Boules is discussed.
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Observation of the Surface Morphology on the (0001)C Facet of 4H-SiC Boules
Materials Science Forum, 2015Co-Authors: Tomoki Yamaguchi, Shunsuke Sato, Noboru Ohtani, Masakazu Katsuno, Tatsuo Fujimoto, Shinya Sato, Hiroshi Tsuge, Takayuki YanoAbstract:The surface morphology on the (000-1)C facet of 4H-SiC Boules grown by the physical vapor transport method was examined in various scales (from millimeter to nanometer) using different types of microscopies such as differential interference contrast (DIC) optical microscopy and atomic force microscopy (AFM). The DIC optical microscope observation revealed that there exist three distinct morphological regions at the growth front of the 4H-SiC Boules; they are facetted, non-facetted, and the intermediate region between them. The local inclination of the facet surface from the (000-1) basal plane increases toward the facet edge and then decreases over the intermediate region. AFM observations revealed characteristic step structures in these two regions and also that they are significantly influenced by nitrogen-doping. Based on the results, the formation mechanism of the facet morphology on 4H-SiC Boules is discussed.
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Surface morphology and step instability on the (0001̄)C facet of physical vapor transport-grown 4H–SiC single crystal Boules
Journal of Crystal Growth, 2015Co-Authors: Tomoki Yamaguchi, Shunsuke Sato, Noboru Ohtani, Masakazu Katsuno, Tatsuo Fujimoto, Shinya Sato, Hiroshi Tsuge, Kohei Ohtomo, Takayuki YanoAbstract:Abstract Surface morphologies on the (000 1 ¯ ) C facet of 4H–SiC Boules grown using the physical vapor transport method were examined in various scales (from millimeter to nanometer) using different types of microscopies such as differential interference contrast (DIC) optical microscopy and atomic force microscopy (AFM). DIC optical microscopic observation revealed that there are three distinct morphological regions at the growth front of the 4H–SiC Boules: the facetted region, non-facetted region and intermediate region between them. The local inclination of the facet surface from the {0001} basal plane increases toward the edge of the facetted region and then decreases in the intermediate region. AFM observations revealed that characteristic step structures were established in these two regions and that nitrogen doping significantly influenced the stability of the step structures. Based on the results, the formation mechanism of surface morphologies on the (000 1 ¯ ) C facet of 4H–SiC Boules is discussed.