The Experts below are selected from a list of 306 Experts worldwide ranked by ideXlab platform
Hyung Jin Sung - One of the best experts on this subject based on the ideXlab platform.
-
Effect of Carrier Gas temperature on pentacene thin film formation by organic vapor-jet printing techniques
Thermochimica Acta, 2012Co-Authors: Hyun Wook Kang, Seung Hwan Ko, Hyung Jin SungAbstract:Abstract Organic vapor jet printing (OVJP) is a powerful mask-free continuous method of fabricating organic thin film semiconductor devices. In the technique, vaporized organic compounds are carried by an inert Carrier Gas and jet-sprayed onto a substrate through a nozzle. During the printing process, the Carrier Gas temperature is controlled by an outer temperature control system. The morphology and electrical properties of organic thin films fabricated in this way can vary depending on the Carrier Gas temperature. This paper examines the effects of Carrier Gas temperature on OVJP systems. Pentacene thin films were fabricated, and their properties were compared with predicted behavior based on numerical simulations. Carrier Gas temperatures exceeding 413 K yielded bulk-mode pentacene thin films with high electrical mobilities. The temperature of the Carrier Gas was a significant factor in determining behavior and properties of the film.
-
Effect of Carrier Gas temperature on pentacene thin film formation by organic vapor-jet printing techniques
Thermochimica Acta, 2012Co-Authors: Hyun Wook Kang, Changhun Yun, Seunghyup Yoo, Seung Hwan Ko, Hyung Jin SungAbstract:Organic vapor jet printing (OVJP) is a powerful mask-free continuous method of fabricating organic thin film semiconductor devices. In the technique, vaporized organic compounds are carried by an inert Carrier Gas and jet-sprayed onto a substrate through a nozzle. During the printing process, the Carrier Gas temperature is controlled by an outer temperature control system. The morphology and electrical properties of organic thin films fabricated in this way can vary depending on the Carrier Gas temperature. This paper examines the effects of Carrier Gas temperature on OVJP systems. Pentacene thin films were fabricated, and their properties were compared with predicted behavior based on numerical simulations. Carrier Gas temperatures exceeding 413 K yielded bulk-mode pentacene thin films with high electrical mobilities. The temperature of the Carrier Gas was a significant factor in determining behavior and properties of the film. © 2012 Elsevier B.V.
Hyun Wook Kang - One of the best experts on this subject based on the ideXlab platform.
-
Effect of Carrier Gas temperature on pentacene thin film formation by organic vapor-jet printing techniques
Thermochimica Acta, 2012Co-Authors: Hyun Wook Kang, Seung Hwan Ko, Hyung Jin SungAbstract:Abstract Organic vapor jet printing (OVJP) is a powerful mask-free continuous method of fabricating organic thin film semiconductor devices. In the technique, vaporized organic compounds are carried by an inert Carrier Gas and jet-sprayed onto a substrate through a nozzle. During the printing process, the Carrier Gas temperature is controlled by an outer temperature control system. The morphology and electrical properties of organic thin films fabricated in this way can vary depending on the Carrier Gas temperature. This paper examines the effects of Carrier Gas temperature on OVJP systems. Pentacene thin films were fabricated, and their properties were compared with predicted behavior based on numerical simulations. Carrier Gas temperatures exceeding 413 K yielded bulk-mode pentacene thin films with high electrical mobilities. The temperature of the Carrier Gas was a significant factor in determining behavior and properties of the film.
-
Effect of Carrier Gas temperature on pentacene thin film formation by organic vapor-jet printing techniques
Thermochimica Acta, 2012Co-Authors: Hyun Wook Kang, Changhun Yun, Seunghyup Yoo, Seung Hwan Ko, Hyung Jin SungAbstract:Organic vapor jet printing (OVJP) is a powerful mask-free continuous method of fabricating organic thin film semiconductor devices. In the technique, vaporized organic compounds are carried by an inert Carrier Gas and jet-sprayed onto a substrate through a nozzle. During the printing process, the Carrier Gas temperature is controlled by an outer temperature control system. The morphology and electrical properties of organic thin films fabricated in this way can vary depending on the Carrier Gas temperature. This paper examines the effects of Carrier Gas temperature on OVJP systems. Pentacene thin films were fabricated, and their properties were compared with predicted behavior based on numerical simulations. Carrier Gas temperatures exceeding 413 K yielded bulk-mode pentacene thin films with high electrical mobilities. The temperature of the Carrier Gas was a significant factor in determining behavior and properties of the film. © 2012 Elsevier B.V.
James S Speck - One of the best experts on this subject based on the ideXlab platform.
-
basal plane stacking fault suppression by nitrogen Carrier Gas in m plane gan regrowth by hydride vapor phase epitaxy
Applied Physics Express, 2013Co-Authors: Benjamin N Bryant, Erin C Young, Feng Wu, Kenji Fujito, Shuji Nakamura, James S SpeckAbstract:In this study we demonstrate a direct correlation between Carrier Gas and the generation of basal plane stacking faults (BPSF) in m-plane GaN during hydride vapor phase epitaxy (HVPE) regrowth. Extended defects have hampered the expansion of non-polar and semi-polar GaN substrates. In this work, high-quality m-plane free-standing substrates were regrown by HVPE under a wide range of growth conditions and Carrier Gases. It was observed that hydrogen Carrier Gas in the HVPE growth promotes the creation of BPSF due to three-dimensional (3D) growth initiated from a masking effect. In contrast, nitrogen Carrier Gas suppresses 3D growth and thus BPSF generation.
-
effect of Carrier Gas and substrate misorientation on the structural and optical properties of m plane ingan gan light emitting diodes
Journal of Crystal Growth, 2010Co-Authors: Robert M Farrell, Kenji Fujito, Daniel A Haeger, X Chen, Asako Hirai, Kathryn M Kelchner, Arpan Chakraborty, S Keller, Steven P Denbaars, James S SpeckAbstract:Abstract The properties of Si-doped GaN (GaN:Si) thin films and InGaN/GaN light-emitting diodes (LEDs) grown by metalorganic chemical vapor deposition on free-standing {1 0 1 0} m -plane GaN substrates were investigated with regard to Carrier Gas and substrate misorientation toward the [0 0 0 1] c − direction. The surface morphology of the GaN:Si thin films and the LEDs was found to be strongly dependent on the choice of Carrier Gas and substrate misorientation. Growth of GaN:Si thin films on nominally on-axis substrates produced surfaces with a high density of four-sided pyramidal hillocks, regardless of the composition of the Carrier Gas. In contrast, growth of GaN:Si thin films on substrates with misorientation angles greater than 0.7° yielded moderately to severely faceted surfaces when grown with H 2 as the Carrier Gas and atomically smooth surfaces when grown with N 2 as the Carrier Gas. Although the surface morphology varied significantly with substrate misorientation, the average indium mole fraction in the InGaN-based quantum wells, the output power of the LEDs, the electroluminescence (EL) peak wavelength, and the EL linewidth showed little dependence on substrate misorientation. Substrates with misorientation angles of about 1° were successfully used to grow LEDs with improved surface morphology but similar optical properties, compared to LEDs grown on nominally on-axis substrates.
S. Sampath - One of the best experts on this subject based on the ideXlab platform.
-
Study of Injection Angle and Carrier Gas Flow Rate Effects on Particles In-Flight Characteristics in Plasma Spray Process: Modeling and Experiments
Plasma Chemistry and Plasma Processing, 2007Co-Authors: W. Zhang, L. L. Zheng, H. Zhang, S. SampathAbstract:This paper investigates the influence of particle injection angle on particle in-flight behaviors and characteristics at different primary and Carrier Gas flow rates through an integrated modeling and experimental approach. Particle in-flight status such as temperature, velocity, size and their distribution are analyzed to examine particle’s melting status before impact. Results from the experiments and numerical simulations both show that, when Carrier Gas flow rate is fixed, a small injection angle favors the particle melting and flattening. This behavior is independent of primary and secondary Gas flow rates, spray distance and Carrier Gas flow rate. When both Carrier Gas flow and injection angle vary, a high Carrier Gas flow rate and a small injection angle are recommended for high particle temperature and velocity.
-
three dimensional simulation of plasma spray effects of Carrier Gas flow and particle injection on plasma jet and entrained particle behavior
International Journal of Heat and Mass Transfer, 2004Co-Authors: Hongbing Xiong, S. Sampath, Lili Zheng, R L Williamson, J R FinckeAbstract:Abstract As important phenomena in plasma spray, the plasma jet perturbation by the Carrier Gas flow and particles loading, and their effects on particle behavior are investigated. A three-dimensional computational model was developed to describe the plasma jet coupled with the orthogonal injection of Carrier Gas and particles. This model considered in-flight particle physical phenomena such as accelerating, heating, melting, and evaporation. The effects of Carrier Gas flow rates on the characteristics of plasma jet and particle spray pattern are simulated. The simulation results compare well with experimental data, for two common particle materials, NiCrAlY and ZrO2.
Seung Hwan Ko - One of the best experts on this subject based on the ideXlab platform.
-
Effect of Carrier Gas temperature on pentacene thin film formation by organic vapor-jet printing techniques
Thermochimica Acta, 2012Co-Authors: Hyun Wook Kang, Seung Hwan Ko, Hyung Jin SungAbstract:Abstract Organic vapor jet printing (OVJP) is a powerful mask-free continuous method of fabricating organic thin film semiconductor devices. In the technique, vaporized organic compounds are carried by an inert Carrier Gas and jet-sprayed onto a substrate through a nozzle. During the printing process, the Carrier Gas temperature is controlled by an outer temperature control system. The morphology and electrical properties of organic thin films fabricated in this way can vary depending on the Carrier Gas temperature. This paper examines the effects of Carrier Gas temperature on OVJP systems. Pentacene thin films were fabricated, and their properties were compared with predicted behavior based on numerical simulations. Carrier Gas temperatures exceeding 413 K yielded bulk-mode pentacene thin films with high electrical mobilities. The temperature of the Carrier Gas was a significant factor in determining behavior and properties of the film.
-
Effect of Carrier Gas temperature on pentacene thin film formation by organic vapor-jet printing techniques
Thermochimica Acta, 2012Co-Authors: Hyun Wook Kang, Changhun Yun, Seunghyup Yoo, Seung Hwan Ko, Hyung Jin SungAbstract:Organic vapor jet printing (OVJP) is a powerful mask-free continuous method of fabricating organic thin film semiconductor devices. In the technique, vaporized organic compounds are carried by an inert Carrier Gas and jet-sprayed onto a substrate through a nozzle. During the printing process, the Carrier Gas temperature is controlled by an outer temperature control system. The morphology and electrical properties of organic thin films fabricated in this way can vary depending on the Carrier Gas temperature. This paper examines the effects of Carrier Gas temperature on OVJP systems. Pentacene thin films were fabricated, and their properties were compared with predicted behavior based on numerical simulations. Carrier Gas temperatures exceeding 413 K yielded bulk-mode pentacene thin films with high electrical mobilities. The temperature of the Carrier Gas was a significant factor in determining behavior and properties of the film. © 2012 Elsevier B.V.
