The Experts below are selected from a list of 96 Experts worldwide ranked by ideXlab platform
C. R. Abernathy - One of the best experts on this subject based on the ideXlab platform.
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Magnetron reactive ion etching of group III‐nitride ternary alloys
Journal of Vacuum Science & Technology A: Vacuum Surfaces and Films, 1996Co-Authors: G. F. Mclane, S. J. Pearton, T. Monahan, D. W. Eckart, C. R. AbernathyAbstract:Magnetron reactive ion etching of the group III‐nitride ternary alloys InxGa1−xN and InxAl1−xN was investigated in BCl3 plasmas and also in SF6/BCl3, H2/BCl3, and Ar/BCl3 gas mixtures. Etch rates were determined as a function of Cathode power density, flow rate, pressure, and gas composition. Etch rates were achieved that were four to six times greater than previously reported for these materials, and at low Cathode Bias voltages (
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High etch rates of GaN with magnetron reactive ion etching in BCl3 plasmas
Applied Physics Letters, 1995Co-Authors: G. F. Mclane, L. Casas, S. J. Pearton, C. R. AbernathyAbstract:Magnetron reactive ion etching of GaN in BCl3 plasmas was investigated as a function of Cathode power density, flow rate, and pressure. GaN etch rates were achieved (350 nm/min), which were twice the highest etch rate previously reported, and at low Cathode Bias voltages (
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high etch rates of gan with magnetron reactive ion etching in bcl3 plasmas
Applied Physics Letters, 1995Co-Authors: G. F. Mclane, L. Casas, S. J. Pearton, C. R. AbernathyAbstract:Magnetron reactive ion etching of GaN in BCl3 plasmas was investigated as a function of Cathode power density, flow rate, and pressure. GaN etch rates were achieved (350 nm/min), which were twice the highest etch rate previously reported, and at low Cathode Bias voltages (<100 V). Auger electron spectroscopy measurements revealed the etched surfaces to be Ga deficient to a depth of 10 nm, with a surface chlorine residue of <1 at. %. Magnetron dry etching appears well suited to applications such as mesa definitions for photonic devices in the GaN materials system.
G. F. Mclane - One of the best experts on this subject based on the ideXlab platform.
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High etch rates of SiC in magnetron enhanced SF6 plasmas
Applied Physics Letters, 1996Co-Authors: G. F. Mclane, J. R. FlemishAbstract:Magnetron enhanced reactive ion etching of SiC has been investigated in SF6 plasmas. Etch rate was determined as a function of Cathode power density (0.1–0.5 W/cm2), pressure (1–5 mTorr), and flow rate (5–15 sccm). The highest SiC etch rates yet reported (450 nm/min) were achieved, at low Cathode Bias voltage (100 V). Anisotropic etch profiles were obtained with smooth etch surfaces free of micromasking. Addition of O2 to the SF6 feed gas did not increase the etch rate.
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Magnetron reactive ion etching of group III‐nitride ternary alloys
Journal of Vacuum Science & Technology A: Vacuum Surfaces and Films, 1996Co-Authors: G. F. Mclane, S. J. Pearton, T. Monahan, D. W. Eckart, C. R. AbernathyAbstract:Magnetron reactive ion etching of the group III‐nitride ternary alloys InxGa1−xN and InxAl1−xN was investigated in BCl3 plasmas and also in SF6/BCl3, H2/BCl3, and Ar/BCl3 gas mixtures. Etch rates were determined as a function of Cathode power density, flow rate, pressure, and gas composition. Etch rates were achieved that were four to six times greater than previously reported for these materials, and at low Cathode Bias voltages (
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High etch rates of GaN with magnetron reactive ion etching in BCl3 plasmas
Applied Physics Letters, 1995Co-Authors: G. F. Mclane, L. Casas, S. J. Pearton, C. R. AbernathyAbstract:Magnetron reactive ion etching of GaN in BCl3 plasmas was investigated as a function of Cathode power density, flow rate, and pressure. GaN etch rates were achieved (350 nm/min), which were twice the highest etch rate previously reported, and at low Cathode Bias voltages (
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high etch rates of gan with magnetron reactive ion etching in bcl3 plasmas
Applied Physics Letters, 1995Co-Authors: G. F. Mclane, L. Casas, S. J. Pearton, C. R. AbernathyAbstract:Magnetron reactive ion etching of GaN in BCl3 plasmas was investigated as a function of Cathode power density, flow rate, and pressure. GaN etch rates were achieved (350 nm/min), which were twice the highest etch rate previously reported, and at low Cathode Bias voltages (<100 V). Auger electron spectroscopy measurements revealed the etched surfaces to be Ga deficient to a depth of 10 nm, with a surface chlorine residue of <1 at. %. Magnetron dry etching appears well suited to applications such as mesa definitions for photonic devices in the GaN materials system.
S. J. Pearton - One of the best experts on this subject based on the ideXlab platform.
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Magnetron reactive ion etching of group III‐nitride ternary alloys
Journal of Vacuum Science & Technology A: Vacuum Surfaces and Films, 1996Co-Authors: G. F. Mclane, S. J. Pearton, T. Monahan, D. W. Eckart, C. R. AbernathyAbstract:Magnetron reactive ion etching of the group III‐nitride ternary alloys InxGa1−xN and InxAl1−xN was investigated in BCl3 plasmas and also in SF6/BCl3, H2/BCl3, and Ar/BCl3 gas mixtures. Etch rates were determined as a function of Cathode power density, flow rate, pressure, and gas composition. Etch rates were achieved that were four to six times greater than previously reported for these materials, and at low Cathode Bias voltages (
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High etch rates of GaN with magnetron reactive ion etching in BCl3 plasmas
Applied Physics Letters, 1995Co-Authors: G. F. Mclane, L. Casas, S. J. Pearton, C. R. AbernathyAbstract:Magnetron reactive ion etching of GaN in BCl3 plasmas was investigated as a function of Cathode power density, flow rate, and pressure. GaN etch rates were achieved (350 nm/min), which were twice the highest etch rate previously reported, and at low Cathode Bias voltages (
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high etch rates of gan with magnetron reactive ion etching in bcl3 plasmas
Applied Physics Letters, 1995Co-Authors: G. F. Mclane, L. Casas, S. J. Pearton, C. R. AbernathyAbstract:Magnetron reactive ion etching of GaN in BCl3 plasmas was investigated as a function of Cathode power density, flow rate, and pressure. GaN etch rates were achieved (350 nm/min), which were twice the highest etch rate previously reported, and at low Cathode Bias voltages (<100 V). Auger electron spectroscopy measurements revealed the etched surfaces to be Ga deficient to a depth of 10 nm, with a surface chlorine residue of <1 at. %. Magnetron dry etching appears well suited to applications such as mesa definitions for photonic devices in the GaN materials system.
L. Casas - One of the best experts on this subject based on the ideXlab platform.
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High etch rates of GaN with magnetron reactive ion etching in BCl3 plasmas
Applied Physics Letters, 1995Co-Authors: G. F. Mclane, L. Casas, S. J. Pearton, C. R. AbernathyAbstract:Magnetron reactive ion etching of GaN in BCl3 plasmas was investigated as a function of Cathode power density, flow rate, and pressure. GaN etch rates were achieved (350 nm/min), which were twice the highest etch rate previously reported, and at low Cathode Bias voltages (
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high etch rates of gan with magnetron reactive ion etching in bcl3 plasmas
Applied Physics Letters, 1995Co-Authors: G. F. Mclane, L. Casas, S. J. Pearton, C. R. AbernathyAbstract:Magnetron reactive ion etching of GaN in BCl3 plasmas was investigated as a function of Cathode power density, flow rate, and pressure. GaN etch rates were achieved (350 nm/min), which were twice the highest etch rate previously reported, and at low Cathode Bias voltages (<100 V). Auger electron spectroscopy measurements revealed the etched surfaces to be Ga deficient to a depth of 10 nm, with a surface chlorine residue of <1 at. %. Magnetron dry etching appears well suited to applications such as mesa definitions for photonic devices in the GaN materials system.
J. R. Flemish - One of the best experts on this subject based on the ideXlab platform.
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High etch rates of SiC in magnetron enhanced SF6 plasmas
Applied Physics Letters, 1996Co-Authors: G. F. Mclane, J. R. FlemishAbstract:Magnetron enhanced reactive ion etching of SiC has been investigated in SF6 plasmas. Etch rate was determined as a function of Cathode power density (0.1–0.5 W/cm2), pressure (1–5 mTorr), and flow rate (5–15 sccm). The highest SiC etch rates yet reported (450 nm/min) were achieved, at low Cathode Bias voltage (100 V). Anisotropic etch profiles were obtained with smooth etch surfaces free of micromasking. Addition of O2 to the SF6 feed gas did not increase the etch rate.