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Nowshad Amin - One of the best experts on this subject based on the ideXlab platform.
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An approach to alternative post-deposition treatment in Cdte Thin films for solar cell application
Superlattices and Microstructures, 2020Co-Authors: Muhammad Najib Harif, Halina Misran, Hasrul Nisham Rosly, Kazi Sajedur Rahman, Puvaneswaran Chelvanathan, Camellia Doroody, Nowshad AminAbstract:Abstract In this study, preliminary investigation of different post-deposition treatments using materials such as cadmium chloride (CdCl2), magnesium chloride (MgCl2), copper chloride (CuCl2), and silver nitrate (AgNO3) has been reported for close-spaced sublimation (CSS) grown cadmium telluride (Cdte) Thin films. The treatment of Cdte Thin films was conducted in open air at 390 °C. Treated Cdte Thin films were then exposed to different characterization tools to explore the effects of treatment on the structural and optoelectronic properties of Cdte films. Hall effect measurement was executed for electrical properties measurement as well as X-ray diffraction (XRD) analysis was utilized for the detection of structural parameters. The energy band gap was obtained at approximately 1.47 eV for all the treated films. CuCl2 treated Cdte films exhibited a higher carrier concentration of 1015 cm−3 than other treatments. The impact of Cu diffusion during CuCl2 treatment was suggested as an effect of doping during recrystallization. The average grain sizes changed moderately in the range 4–7 μm for different post-deposition treatments. The optimized results can provide an indication for other materials to be used as the alternative post-deposition treatment to conventional CdCl2.
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Influence of deposition time in Cdte Thin film properties grown by Close-Spaced Sublimation (CSS) for photovoltaic application
Results in Physics, 2019Co-Authors: K. S. Rahman, M. I. Kamaruzzaman, Halina Misran, Akhtaruzzaman, Muhammad Najib Harif, Hasrul Nisham Rosly, M. A. Alghoul, Nowshad AminAbstract:Abstract Cadmium Telluride (Cdte) Thin films were grown on borosilicate glass substrates by close-spaced sublimation (CSS) at a pressure of 1.5–2 Torr in Ar ambient. Cdte Thin films were sublimed at a source temperature of 625 °C and substrate temperature of 595 °C. In this study, the impact of various deposition times on the structural, morphological, topographical, electrical and optical properties of Cdte Thin films has been explored to achieve high quality Thin film absorber layer for solar cells applications. The crystalline structure, surface morphology, surface topology, electrical and optical properties of the films were examined by using X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), Atomic Force Microscopy (AFM), Hall Effect measurement and UV–Vis spectrophotometry, respectively. XRD investigation demonstrated that Cdte film shows polycrystalline nature pronounced with cubic zinc blende structure with a strong preferential (1 1 1) orientation. The FESEM images illustrated that the surface morphology and the average grain size of the films were dependent on the deposition times of Cdte Thin films. AFM analysis revealed noteworthy changes in the film’s surface roughness values for different deposition times. Carrier concentration was found in the order of 1013 cm−3. Band gap of Cdte Thin film was found in the range 1.45–1.48 eV, which is suitable to be used in Cdte Thin film solar cells.
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Impact of Cdte Thin film thickness in ZnxCd1−xS/Cdte solar cell by RF sputtering
Solar Energy, 2019Co-Authors: Mohammad Sharafat Hossain, K. S. Rahman, Halina Misran, Mohammad Rezaul Karim, Mohammed Omer Aijaz, Mushtaq Ahmad Dar, Muhammad Ali Shar, Nowshad AminAbstract:Abstract This paper presents the impact of thickness of RF sputtered Cdte Thin film as an absorber layer through structural and optical characterization in ZnxCd1−xS/Cdte solar cells at lower concentration of zinc (Zn). The crystallographic, morphological and optical properties of Cdte Thin film fabricated on top of bare soda-lime glass were elucidated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and ultraviolet (UV) spectrophotometer. XRD spectra shows that crystallinity increases in thicker samples and the Cdte (1 1 1) diffraction peak intensity centered at 23.825° increases with the increase of film thickness confirming the zinc blend structure of Cdte Thin film. The window layer ZnxCd1−xS was fabricated with optimum deposition conditions by co-sputtering of ZnS and CdS. The complete cell was fabricated by RF magnetron sputtering with the cell configuration of glass/FTO/ZnxCd1−xS/ZnTe/Ag. With the increasing thicknesses of Cdte the cell efficiency increases with the highest efficiency of 8.79% for 3.5 μm of Cdte. This paves the way of novel window of ZnCdte for smoothening the junction mismatches in hetero-junction Cdte Thin film solar cells.
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Effect of laser annealing on thermally evaporated Cdte Thin films for photovoltaic absorber application
Solar Energy, 2018Co-Authors: N. A. Khan, K. S. Rahman, Kamarul Azrul Aris, Ameen M. Ali, Halina Misran, Akhtaruzzaman, Sieh Kiong Tiong, Nowshad AminAbstract:Abstract Cdte Thin films were deposited on soda lime glass substrates (SLG) by thermal evaporation technique under high vacuum condition. As-deposited Cdte Thin films were subjected to post deposition laser annealing treatment at three laser output energies of 50, 60, and 70 J/pulse. Laser annealing was employed using the laser beam with combined wavelengths of 1064 nm and 532 nm, where the laser energy was varied and the oscillator frequency was kept fixed at 10 Hz. XRD was employed to find the structural properties of the as-deposited and laser annealed Cdte Thin films. Topography and surface morphology of the Cdte Thin films were investigated using AFM and FESEM, respectively. Chemical composition and stoichiometry of the films were analysed by EDX integrated with FESEM. Electrical properties of the Cdte films were measured using Hall Effect measurement system and the optical properties of the as-deposited and laser annealed Cdte films were studied by UV–Vis. XRD analysis showed that as-deposited and laser annealed Cdte Thin films had a mixed phase of cubic and hexagonal structures with the preferential crystal orientation of C (1 1 1) at approximately 2θ = 23.80°. Cdte Thin films laser annealed at 60 J/pulse had better crystalline property having minimum internal strain with lower surface roughness and larger grain size resulting in optimized coalescence. EDX, Hall Effect, and UV–Vis results for the film laser annealed at 60 J/pulse depicted good compositional stoichiometry, better electrical properties and optimum optical properties showing the prospects as a potential absorber for Cdte Thin film solar cells.
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A computational study on the energy bandgap engineering in performance enhancement of Cdte Thin film solar cells
Results in Physics, 2017Co-Authors: Ameen M. Ali, K. S. Rahman, Kamaruzzaman Sopian, Akhtaruzzaman, Lamya M. Ali, Shahidan Radiman, Nowshad AminAbstract:Abstract In this study, photovoltaic properties of Cdte Thin film in the configuration of n-SnO2/n-CdS/p-Cdte/p-Cdte:Te/metal have been studied by numerical simulation software named “Analysis of Microelectronic and Photonic Structure” (AMPS-1D). A modified structure for Cdte Thin film solar cell has been proposed by numerical analysis with the insertion of a back contact buffer layer (Cdte:Te). This layer can serve as a barrier that will decelerate the copper diffusion in Cdte solar cell. Four estimated energy bandgap relations versus the Tellurium (Te) concentrations and the (Cdte:Te) layer thickness have been examined thoroughly during simulation. Correlation between energy bandgap with the Cdte Thin film solar cell performance has also been established.
Halina Misran - One of the best experts on this subject based on the ideXlab platform.
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An approach to alternative post-deposition treatment in Cdte Thin films for solar cell application
Superlattices and Microstructures, 2020Co-Authors: Muhammad Najib Harif, Halina Misran, Hasrul Nisham Rosly, Kazi Sajedur Rahman, Puvaneswaran Chelvanathan, Camellia Doroody, Nowshad AminAbstract:Abstract In this study, preliminary investigation of different post-deposition treatments using materials such as cadmium chloride (CdCl2), magnesium chloride (MgCl2), copper chloride (CuCl2), and silver nitrate (AgNO3) has been reported for close-spaced sublimation (CSS) grown cadmium telluride (Cdte) Thin films. The treatment of Cdte Thin films was conducted in open air at 390 °C. Treated Cdte Thin films were then exposed to different characterization tools to explore the effects of treatment on the structural and optoelectronic properties of Cdte films. Hall effect measurement was executed for electrical properties measurement as well as X-ray diffraction (XRD) analysis was utilized for the detection of structural parameters. The energy band gap was obtained at approximately 1.47 eV for all the treated films. CuCl2 treated Cdte films exhibited a higher carrier concentration of 1015 cm−3 than other treatments. The impact of Cu diffusion during CuCl2 treatment was suggested as an effect of doping during recrystallization. The average grain sizes changed moderately in the range 4–7 μm for different post-deposition treatments. The optimized results can provide an indication for other materials to be used as the alternative post-deposition treatment to conventional CdCl2.
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Impact of Cdte Thin film thickness in ZnxCd1−xS/Cdte solar cell by RF sputtering
Solar Energy, 2019Co-Authors: Mohammad Sharafat Hossain, K. S. Rahman, Halina Misran, Mohammad Rezaul Karim, Mohammed Omer Aijaz, Mushtaq Ahmad Dar, Muhammad Ali Shar, Nowshad AminAbstract:Abstract This paper presents the impact of thickness of RF sputtered Cdte Thin film as an absorber layer through structural and optical characterization in ZnxCd1−xS/Cdte solar cells at lower concentration of zinc (Zn). The crystallographic, morphological and optical properties of Cdte Thin film fabricated on top of bare soda-lime glass were elucidated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and ultraviolet (UV) spectrophotometer. XRD spectra shows that crystallinity increases in thicker samples and the Cdte (1 1 1) diffraction peak intensity centered at 23.825° increases with the increase of film thickness confirming the zinc blend structure of Cdte Thin film. The window layer ZnxCd1−xS was fabricated with optimum deposition conditions by co-sputtering of ZnS and CdS. The complete cell was fabricated by RF magnetron sputtering with the cell configuration of glass/FTO/ZnxCd1−xS/ZnTe/Ag. With the increasing thicknesses of Cdte the cell efficiency increases with the highest efficiency of 8.79% for 3.5 μm of Cdte. This paves the way of novel window of ZnCdte for smoothening the junction mismatches in hetero-junction Cdte Thin film solar cells.
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Influence of deposition time in Cdte Thin film properties grown by Close-Spaced Sublimation (CSS) for photovoltaic application
Results in Physics, 2019Co-Authors: K. S. Rahman, M. I. Kamaruzzaman, Halina Misran, Akhtaruzzaman, Muhammad Najib Harif, Hasrul Nisham Rosly, M. A. Alghoul, Nowshad AminAbstract:Abstract Cadmium Telluride (Cdte) Thin films were grown on borosilicate glass substrates by close-spaced sublimation (CSS) at a pressure of 1.5–2 Torr in Ar ambient. Cdte Thin films were sublimed at a source temperature of 625 °C and substrate temperature of 595 °C. In this study, the impact of various deposition times on the structural, morphological, topographical, electrical and optical properties of Cdte Thin films has been explored to achieve high quality Thin film absorber layer for solar cells applications. The crystalline structure, surface morphology, surface topology, electrical and optical properties of the films were examined by using X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), Atomic Force Microscopy (AFM), Hall Effect measurement and UV–Vis spectrophotometry, respectively. XRD investigation demonstrated that Cdte film shows polycrystalline nature pronounced with cubic zinc blende structure with a strong preferential (1 1 1) orientation. The FESEM images illustrated that the surface morphology and the average grain size of the films were dependent on the deposition times of Cdte Thin films. AFM analysis revealed noteworthy changes in the film’s surface roughness values for different deposition times. Carrier concentration was found in the order of 1013 cm−3. Band gap of Cdte Thin film was found in the range 1.45–1.48 eV, which is suitable to be used in Cdte Thin film solar cells.
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Effect of laser annealing on thermally evaporated Cdte Thin films for photovoltaic absorber application
Solar Energy, 2018Co-Authors: N. A. Khan, K. S. Rahman, Kamarul Azrul Aris, Ameen M. Ali, Halina Misran, Akhtaruzzaman, Sieh Kiong Tiong, Nowshad AminAbstract:Abstract Cdte Thin films were deposited on soda lime glass substrates (SLG) by thermal evaporation technique under high vacuum condition. As-deposited Cdte Thin films were subjected to post deposition laser annealing treatment at three laser output energies of 50, 60, and 70 J/pulse. Laser annealing was employed using the laser beam with combined wavelengths of 1064 nm and 532 nm, where the laser energy was varied and the oscillator frequency was kept fixed at 10 Hz. XRD was employed to find the structural properties of the as-deposited and laser annealed Cdte Thin films. Topography and surface morphology of the Cdte Thin films were investigated using AFM and FESEM, respectively. Chemical composition and stoichiometry of the films were analysed by EDX integrated with FESEM. Electrical properties of the Cdte films were measured using Hall Effect measurement system and the optical properties of the as-deposited and laser annealed Cdte films were studied by UV–Vis. XRD analysis showed that as-deposited and laser annealed Cdte Thin films had a mixed phase of cubic and hexagonal structures with the preferential crystal orientation of C (1 1 1) at approximately 2θ = 23.80°. Cdte Thin films laser annealed at 60 J/pulse had better crystalline property having minimum internal strain with lower surface roughness and larger grain size resulting in optimized coalescence. EDX, Hall Effect, and UV–Vis results for the film laser annealed at 60 J/pulse depicted good compositional stoichiometry, better electrical properties and optimum optical properties showing the prospects as a potential absorber for Cdte Thin film solar cells.
K. S. Rahman - One of the best experts on this subject based on the ideXlab platform.
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Influence of deposition time in Cdte Thin film properties grown by Close-Spaced Sublimation (CSS) for photovoltaic application
Results in Physics, 2019Co-Authors: K. S. Rahman, M. I. Kamaruzzaman, Halina Misran, Akhtaruzzaman, Muhammad Najib Harif, Hasrul Nisham Rosly, M. A. Alghoul, Nowshad AminAbstract:Abstract Cadmium Telluride (Cdte) Thin films were grown on borosilicate glass substrates by close-spaced sublimation (CSS) at a pressure of 1.5–2 Torr in Ar ambient. Cdte Thin films were sublimed at a source temperature of 625 °C and substrate temperature of 595 °C. In this study, the impact of various deposition times on the structural, morphological, topographical, electrical and optical properties of Cdte Thin films has been explored to achieve high quality Thin film absorber layer for solar cells applications. The crystalline structure, surface morphology, surface topology, electrical and optical properties of the films were examined by using X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), Atomic Force Microscopy (AFM), Hall Effect measurement and UV–Vis spectrophotometry, respectively. XRD investigation demonstrated that Cdte film shows polycrystalline nature pronounced with cubic zinc blende structure with a strong preferential (1 1 1) orientation. The FESEM images illustrated that the surface morphology and the average grain size of the films were dependent on the deposition times of Cdte Thin films. AFM analysis revealed noteworthy changes in the film’s surface roughness values for different deposition times. Carrier concentration was found in the order of 1013 cm−3. Band gap of Cdte Thin film was found in the range 1.45–1.48 eV, which is suitable to be used in Cdte Thin film solar cells.
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Impact of Cdte Thin film thickness in ZnxCd1−xS/Cdte solar cell by RF sputtering
Solar Energy, 2019Co-Authors: Mohammad Sharafat Hossain, K. S. Rahman, Halina Misran, Mohammad Rezaul Karim, Mohammed Omer Aijaz, Mushtaq Ahmad Dar, Muhammad Ali Shar, Nowshad AminAbstract:Abstract This paper presents the impact of thickness of RF sputtered Cdte Thin film as an absorber layer through structural and optical characterization in ZnxCd1−xS/Cdte solar cells at lower concentration of zinc (Zn). The crystallographic, morphological and optical properties of Cdte Thin film fabricated on top of bare soda-lime glass were elucidated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and ultraviolet (UV) spectrophotometer. XRD spectra shows that crystallinity increases in thicker samples and the Cdte (1 1 1) diffraction peak intensity centered at 23.825° increases with the increase of film thickness confirming the zinc blend structure of Cdte Thin film. The window layer ZnxCd1−xS was fabricated with optimum deposition conditions by co-sputtering of ZnS and CdS. The complete cell was fabricated by RF magnetron sputtering with the cell configuration of glass/FTO/ZnxCd1−xS/ZnTe/Ag. With the increasing thicknesses of Cdte the cell efficiency increases with the highest efficiency of 8.79% for 3.5 μm of Cdte. This paves the way of novel window of ZnCdte for smoothening the junction mismatches in hetero-junction Cdte Thin film solar cells.
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Effect of laser annealing on thermally evaporated Cdte Thin films for photovoltaic absorber application
Solar Energy, 2018Co-Authors: N. A. Khan, K. S. Rahman, Kamarul Azrul Aris, Ameen M. Ali, Halina Misran, Akhtaruzzaman, Sieh Kiong Tiong, Nowshad AminAbstract:Abstract Cdte Thin films were deposited on soda lime glass substrates (SLG) by thermal evaporation technique under high vacuum condition. As-deposited Cdte Thin films were subjected to post deposition laser annealing treatment at three laser output energies of 50, 60, and 70 J/pulse. Laser annealing was employed using the laser beam with combined wavelengths of 1064 nm and 532 nm, where the laser energy was varied and the oscillator frequency was kept fixed at 10 Hz. XRD was employed to find the structural properties of the as-deposited and laser annealed Cdte Thin films. Topography and surface morphology of the Cdte Thin films were investigated using AFM and FESEM, respectively. Chemical composition and stoichiometry of the films were analysed by EDX integrated with FESEM. Electrical properties of the Cdte films were measured using Hall Effect measurement system and the optical properties of the as-deposited and laser annealed Cdte films were studied by UV–Vis. XRD analysis showed that as-deposited and laser annealed Cdte Thin films had a mixed phase of cubic and hexagonal structures with the preferential crystal orientation of C (1 1 1) at approximately 2θ = 23.80°. Cdte Thin films laser annealed at 60 J/pulse had better crystalline property having minimum internal strain with lower surface roughness and larger grain size resulting in optimized coalescence. EDX, Hall Effect, and UV–Vis results for the film laser annealed at 60 J/pulse depicted good compositional stoichiometry, better electrical properties and optimum optical properties showing the prospects as a potential absorber for Cdte Thin film solar cells.
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A computational study on the energy bandgap engineering in performance enhancement of Cdte Thin film solar cells
Results in Physics, 2017Co-Authors: Ameen M. Ali, K. S. Rahman, Kamaruzzaman Sopian, Akhtaruzzaman, Lamya M. Ali, Shahidan Radiman, Nowshad AminAbstract:Abstract In this study, photovoltaic properties of Cdte Thin film in the configuration of n-SnO2/n-CdS/p-Cdte/p-Cdte:Te/metal have been studied by numerical simulation software named “Analysis of Microelectronic and Photonic Structure” (AMPS-1D). A modified structure for Cdte Thin film solar cell has been proposed by numerical analysis with the insertion of a back contact buffer layer (Cdte:Te). This layer can serve as a barrier that will decelerate the copper diffusion in Cdte solar cell. Four estimated energy bandgap relations versus the Tellurium (Te) concentrations and the (Cdte:Te) layer thickness have been examined thoroughly during simulation. Correlation between energy bandgap with the Cdte Thin film solar cell performance has also been established.
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Effect of laser annealing on Cdte Thin film deposited by thermal evaporation
Chalcogenide Letters, 2015Co-Authors: N. A. Khan, K. S. Rahman, M. I. Kamaruzzaman, Fozia Z. Haque, M. M. Alam, Zeid A. Alothman, Kamaruzzaman Sopian, Nowshad Amin, Saudi ArabiaAbstract:In this study, the influence of laser annealing on the structural, optical and electrical properties of thermally evaporated Cdte Thin films has been investigated. Cdte Thin films were deposited by thermal evaporation at different power. Thermally evaporated Cdte Thin films were then subjected to post deposition laser annealing. The laser annealing was done by illuminating the films by pulsed laser beam with combined wavelengths of 1064nm and 532nm. Both the as-deposited and laser-annealed Cdte Thin films were characterized using XRD, AFM, FESEM integrated with EDS, UV-Vis spectroscopy and Hall Effect measurement system. The as-grown and laser-annealed Cdte Thin films deposited on soda lime glass showed polycrystalline nature with a mixture of zinc-blende (cubic, C) and wurtzite (hexagonal, H) phases. AFM images on the other hand showed increase in R.M.S roughness value after laser annealing. FESEM micrographs revealed the increase in grain size and the EDS results showed that the Cdte films became tellurium rich upon laser annealing. The band gap of the films increased after laser annealing due to the quantum confinement effect as revealed from optical analysis. Hall Effect measurement found different electrical nature of the Cdte Thin films after laser annealing.
A. Subbarayan - One of the best experts on this subject based on the ideXlab platform.
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Influence of CdCl2 treatment on structural and optical properties of vacuum evaporated Cdte Thin films
Solar Energy Materials and Solar Cells, 2006Co-Authors: S. Lalitha, R. Sathyamoorthy, Sundaram Senthilarasu, A. SubbarayanAbstract:Abstract In this article we have discussed the structural, optical properties of vacuum evaporated Cdte Thin films before and after CdCl 2 treatment. The Cdte Thin films were prepared by vacuum evaporation. Films were prepared under the vacuum of 10 −6 Torr. The structural studies have been performed by the X-ray diffraction (XRD) technique. The XRD analysis of vacuum evaporated Cdte films reveals that the structure of films is polycrystalline in nature. However, the crystallinity has been improved after the CdCl 2 treatment as shown by an increase of the diffraction peak intensities. This is due to the enhancement in the atomic mobility of Cdte. The optical properties of the Cdte Thin films have been studied by the spectrophotometer in the 300–800 nm wavelength range. It is observed that the optical band gap energy is highly dependent on CdCl 2 treatments. The optical transitions in these films are found to be direct and allowed.
Seungju Chun - One of the best experts on this subject based on the ideXlab platform.
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growth of Cdte Thin films on graphene by close spaced sublimation method
Applied Physics Letters, 2013Co-Authors: Younghun Jung, Gwangseok Yang, Seungju ChunAbstract:Cdte Thin films grown on bi-layer graphene were demonstrated by using the close-spaced sublimation method, where Cdte was selectively grown on the graphene. The density of the Cdte domains was increased with increasing the number of the defective sites in the graphene, which was controlled by the duration of UV exposure. The Cdte growth rate on the bi-layer graphene electrodes was 400 nm/min with a bandgap energy of 1.45–1.49 eV. Scanning electron microscopy, micro-Raman spectroscopy, micro-photoluminescence, and X-ray diffraction technique were used to confirm the high quality of the Cdte Thin films grown on the graphene electrodes.