The Experts below are selected from a list of 285 Experts worldwide ranked by ideXlab platform
Byunggook Park - One of the best experts on this subject based on the ideXlab platform.
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electron trap density distribution of si rich silicon nitride extracted using the modified negative Charge Decay model of silicon oxide nitride oxide silicon structure at elevated temperatures
Applied Physics Letters, 2006Co-Authors: I H Park, Hyungcheol Shin, Byunggook ParkAbstract:The authors modified the Charge Decay model of silicon-oxide-nitride-oxide-silicon-type memory at the temperatures above 150°C. The modified model includes the effect of the internal electric field induced by the Charges trapped in silicon nitride layer. The authors extracted the trap density distributions in energy level of the Si-rich silicon nitride using the model and compared them with those of stoichiometric silicon nitride. It has been revealed that the Si-rich silicon nitride has larger trap density in shallow energy level than the stoichiometric silicon nitride and this relation is reversed as the energy level goes deeper.
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Charge Decay characteristics of silicon oxide nitride oxide silicon structure at elevated temperatures and extraction of the nitride trap density distribution
Applied Physics Letters, 2004Co-Authors: Hyungcheol Shin, Byunggook ParkAbstract:We investigated the Charge Decay characteristics of a silicon-oxide-nitride-oxide-silicon type nonvolatile memory at elevated temperatures. Based on the amphoteric trap model and the thermal emission model of the trapped Charge, we propose an advanced Charge Decay model which includes the effect of the bottom oxide, and apply it to extraction of the trap density distribution in energy levels of the nitride layer. The samples prepared have nitride films deposited simultaneously and are classified into two groups according to the thickness of the bottom oxide. The trap density distributions extracted from two groups showed good consistency.
Hyungcheol Shin - One of the best experts on this subject based on the ideXlab platform.
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electron trap density distribution of si rich silicon nitride extracted using the modified negative Charge Decay model of silicon oxide nitride oxide silicon structure at elevated temperatures
Applied Physics Letters, 2006Co-Authors: I H Park, Hyungcheol Shin, Byunggook ParkAbstract:The authors modified the Charge Decay model of silicon-oxide-nitride-oxide-silicon-type memory at the temperatures above 150°C. The modified model includes the effect of the internal electric field induced by the Charges trapped in silicon nitride layer. The authors extracted the trap density distributions in energy level of the Si-rich silicon nitride using the model and compared them with those of stoichiometric silicon nitride. It has been revealed that the Si-rich silicon nitride has larger trap density in shallow energy level than the stoichiometric silicon nitride and this relation is reversed as the energy level goes deeper.
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Charge Decay characteristics of silicon oxide nitride oxide silicon structure at elevated temperatures and extraction of the nitride trap density distribution
Applied Physics Letters, 2004Co-Authors: Hyungcheol Shin, Byunggook ParkAbstract:We investigated the Charge Decay characteristics of a silicon-oxide-nitride-oxide-silicon type nonvolatile memory at elevated temperatures. Based on the amphoteric trap model and the thermal emission model of the trapped Charge, we propose an advanced Charge Decay model which includes the effect of the bottom oxide, and apply it to extraction of the trap density distribution in energy levels of the nitride layer. The samples prepared have nitride films deposited simultaneously and are classified into two groups according to the thickness of the bottom oxide. The trap density distributions extracted from two groups showed good consistency.
I H Park - One of the best experts on this subject based on the ideXlab platform.
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electron trap density distribution of si rich silicon nitride extracted using the modified negative Charge Decay model of silicon oxide nitride oxide silicon structure at elevated temperatures
Applied Physics Letters, 2006Co-Authors: I H Park, Hyungcheol Shin, Byunggook ParkAbstract:The authors modified the Charge Decay model of silicon-oxide-nitride-oxide-silicon-type memory at the temperatures above 150°C. The modified model includes the effect of the internal electric field induced by the Charges trapped in silicon nitride layer. The authors extracted the trap density distributions in energy level of the Si-rich silicon nitride using the model and compared them with those of stoichiometric silicon nitride. It has been revealed that the Si-rich silicon nitride has larger trap density in shallow energy level than the stoichiometric silicon nitride and this relation is reversed as the energy level goes deeper.
C. Y. Ng - One of the best experts on this subject based on the ideXlab platform.
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Charge Trapping and Charge Decay in Silicon Nanocrystals
2020Co-Authors: C. Y. Ng, L. DingAbstract:In this work, we present a study on the Charge trapping and Charge Decay in nc-Si embedded in SiO2 by electrostatic force microscopy (EFM). The influence of silicon nanocrystals (nc-Si) distribution in the SiO2 matrix on Charge injection (Charge spot size) and Charge Decay (characteristic Decay time and Decay mechanism) are investigated. The Charge Decay is found to be affected by the neighboring Charge and Charge sign for different nc-Si distributions in the SiO2 matrix. Different dissipation mechanisms of the Charges stored in the nc-Si with different distributions inside the SiO2 matrix are discussed.
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influence of silicon nanocrystal distribution in sio2 matrix on Charge injection and Charge Decay
Applied Physics Letters, 2005Co-Authors: C. Y. Ng, T P Chen, S Fung, Ampere A TsengAbstract:Influence of distribution of silicon nanocrystals (nc-Si) embedded in SiO2 matrix on Charge injection and Charge Decay of the nc-Si has been investigated with electrostatic force microscopy. For nc-Si distributing in the surface region, the size of Charge cloud does not change with Decay time, and neighboring Charges have no influence on the Charge Decay. In contrast, for nc-Si distributing away from the surface, the size linearly increases with Decay time, and the neighboring Charges can either accelerate or resist the Charge Decay depending on their Charge signs. In addition, the characteristic Decay time for the first distribution is much shorter than that for the second distribution. These results provide an insight into the dissipation mechanism of the Charges stored in the nc-Si.
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Real time evolution of Charge Decay characteristics in silicon nanocrystals
2004 IEEE International Conference on Semiconductor Electronics, 2004Co-Authors: C. Y. Ng, T P ChenAbstract:In this paper, we present a study on the Charge trapping and Charge Decay mechanism in silicon nanocrystals (nc-Si) embedded in silicon-dioxide (SiO/sub 2/) by electrostatic force microscopy (EFM). From the characteristic Decay time /spl tau/, lateral diffusion of the stored Charges in nc-Si is observed. Increases in the size of Charge cloud as a function of time is an evidence of lateral Charge diffusion. In addition, Charge interaction between the Charges with opposite Charge sign is also evident from the oscillation in the time dependence of the size of Charge cloud. Neighboring Charge with opposite Charge sign enhanced the lateral Charge diffusion.
Ampere A Tseng - One of the best experts on this subject based on the ideXlab platform.
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influence of silicon nanocrystal distribution in sio2 matrix on Charge injection and Charge Decay
Applied Physics Letters, 2005Co-Authors: C. Y. Ng, T P Chen, S Fung, Ampere A TsengAbstract:Influence of distribution of silicon nanocrystals (nc-Si) embedded in SiO2 matrix on Charge injection and Charge Decay of the nc-Si has been investigated with electrostatic force microscopy. For nc-Si distributing in the surface region, the size of Charge cloud does not change with Decay time, and neighboring Charges have no influence on the Charge Decay. In contrast, for nc-Si distributing away from the surface, the size linearly increases with Decay time, and the neighboring Charges can either accelerate or resist the Charge Decay depending on their Charge signs. In addition, the characteristic Decay time for the first distribution is much shorter than that for the second distribution. These results provide an insight into the dissipation mechanism of the Charges stored in the nc-Si.