The Experts below are selected from a list of 27 Experts worldwide ranked by ideXlab platform

Gregory T. A. Kovacs - One of the best experts on this subject based on the ideXlab platform.

  • PECVD silicon carbide as a Chemically Resistant Material for micromachined transducers
    Sensors and Actuators A: Physical, 1998
    Co-Authors: Anthony F. Flannery, Nicholas J. Mourlas, C.w. Storment, Stan Tsai, Samantha H. Tan, John Heck, Dave Monk, Thomas Kim, Bishnu P. Gogoi, Gregory T. A. Kovacs
    Abstract:

    Abstract Plasma enhanced chemical vapor deposited (PECVD) amorphous hydrogenated silicon carbide is a Material with many potential applications for micromachined transducers. Specifically, its resistance to etching in a broad range of media such as sulfuric acid/peroxide, hydrofluoric acid and potassium hydroxide make it an excellent choice for use as an encapsulating Material for media compatible transducers. This etch resistance also makes it useful as a masking Material for intermediate processing steps. Despite this wet chemical resistance, it can be patterned easily in fluorine-based plasmas. A series of trials were undertaken in an attempt to correlate stress, resistivity and wet etch resistance with the following deposition parameters: pressure, CH4 flow rate, low frequency power, low frequency cycle time, high frequency power, and high frequency cycle time. Work to date has demonstrated a CMOS compatible, insulating thin film with a low stress (

Anthony F. Flannery - One of the best experts on this subject based on the ideXlab platform.

  • PECVD silicon carbide as a Chemically Resistant Material for micromachined transducers
    Sensors and Actuators A: Physical, 1998
    Co-Authors: Anthony F. Flannery, Nicholas J. Mourlas, C.w. Storment, Stan Tsai, Samantha H. Tan, John Heck, Dave Monk, Thomas Kim, Bishnu P. Gogoi, Gregory T. A. Kovacs
    Abstract:

    Abstract Plasma enhanced chemical vapor deposited (PECVD) amorphous hydrogenated silicon carbide is a Material with many potential applications for micromachined transducers. Specifically, its resistance to etching in a broad range of media such as sulfuric acid/peroxide, hydrofluoric acid and potassium hydroxide make it an excellent choice for use as an encapsulating Material for media compatible transducers. This etch resistance also makes it useful as a masking Material for intermediate processing steps. Despite this wet chemical resistance, it can be patterned easily in fluorine-based plasmas. A series of trials were undertaken in an attempt to correlate stress, resistivity and wet etch resistance with the following deposition parameters: pressure, CH4 flow rate, low frequency power, low frequency cycle time, high frequency power, and high frequency cycle time. Work to date has demonstrated a CMOS compatible, insulating thin film with a low stress (

Nicholas J. Mourlas - One of the best experts on this subject based on the ideXlab platform.

  • PECVD silicon carbide as a Chemically Resistant Material for micromachined transducers
    Sensors and Actuators A: Physical, 1998
    Co-Authors: Anthony F. Flannery, Nicholas J. Mourlas, C.w. Storment, Stan Tsai, Samantha H. Tan, John Heck, Dave Monk, Thomas Kim, Bishnu P. Gogoi, Gregory T. A. Kovacs
    Abstract:

    Abstract Plasma enhanced chemical vapor deposited (PECVD) amorphous hydrogenated silicon carbide is a Material with many potential applications for micromachined transducers. Specifically, its resistance to etching in a broad range of media such as sulfuric acid/peroxide, hydrofluoric acid and potassium hydroxide make it an excellent choice for use as an encapsulating Material for media compatible transducers. This etch resistance also makes it useful as a masking Material for intermediate processing steps. Despite this wet chemical resistance, it can be patterned easily in fluorine-based plasmas. A series of trials were undertaken in an attempt to correlate stress, resistivity and wet etch resistance with the following deposition parameters: pressure, CH4 flow rate, low frequency power, low frequency cycle time, high frequency power, and high frequency cycle time. Work to date has demonstrated a CMOS compatible, insulating thin film with a low stress (

C.w. Storment - One of the best experts on this subject based on the ideXlab platform.

  • PECVD silicon carbide as a Chemically Resistant Material for micromachined transducers
    Sensors and Actuators A: Physical, 1998
    Co-Authors: Anthony F. Flannery, Nicholas J. Mourlas, C.w. Storment, Stan Tsai, Samantha H. Tan, John Heck, Dave Monk, Thomas Kim, Bishnu P. Gogoi, Gregory T. A. Kovacs
    Abstract:

    Abstract Plasma enhanced chemical vapor deposited (PECVD) amorphous hydrogenated silicon carbide is a Material with many potential applications for micromachined transducers. Specifically, its resistance to etching in a broad range of media such as sulfuric acid/peroxide, hydrofluoric acid and potassium hydroxide make it an excellent choice for use as an encapsulating Material for media compatible transducers. This etch resistance also makes it useful as a masking Material for intermediate processing steps. Despite this wet chemical resistance, it can be patterned easily in fluorine-based plasmas. A series of trials were undertaken in an attempt to correlate stress, resistivity and wet etch resistance with the following deposition parameters: pressure, CH4 flow rate, low frequency power, low frequency cycle time, high frequency power, and high frequency cycle time. Work to date has demonstrated a CMOS compatible, insulating thin film with a low stress (

Stan Tsai - One of the best experts on this subject based on the ideXlab platform.

  • PECVD silicon carbide as a Chemically Resistant Material for micromachined transducers
    Sensors and Actuators A: Physical, 1998
    Co-Authors: Anthony F. Flannery, Nicholas J. Mourlas, C.w. Storment, Stan Tsai, Samantha H. Tan, John Heck, Dave Monk, Thomas Kim, Bishnu P. Gogoi, Gregory T. A. Kovacs
    Abstract:

    Abstract Plasma enhanced chemical vapor deposited (PECVD) amorphous hydrogenated silicon carbide is a Material with many potential applications for micromachined transducers. Specifically, its resistance to etching in a broad range of media such as sulfuric acid/peroxide, hydrofluoric acid and potassium hydroxide make it an excellent choice for use as an encapsulating Material for media compatible transducers. This etch resistance also makes it useful as a masking Material for intermediate processing steps. Despite this wet chemical resistance, it can be patterned easily in fluorine-based plasmas. A series of trials were undertaken in an attempt to correlate stress, resistivity and wet etch resistance with the following deposition parameters: pressure, CH4 flow rate, low frequency power, low frequency cycle time, high frequency power, and high frequency cycle time. Work to date has demonstrated a CMOS compatible, insulating thin film with a low stress (