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  • laser testing of anti reflectIon micro structures fabricated in znse and Chromium Ion doped znse laser gain media
    Optical Materials Express, 2017
    Co-Authors: Douglas S Hobbs, Bruce D Macleod, Ernest Sabatino, S B Mirov, Dmitri V Martyshkin, Michael Mirov, Georgiy Tsoi, Sean A Mcdaniel, Gary Cook
    Abstract:

    An expanded study has been completed of the pulsed and continuous wave (CW) laser induced damage threshold (LiDT) of surface relief anti-reflectIon (AR) microstructures (ARMs) etched in zinc selenide (ZnSe) crystals and Chromium-Ion-doped (Cr:ZnSe) laser gain media. In multiple-sample per variant testing at wavelengths of 2095 and 2940nm, the pulsed laser damage resistance of ARMs textured ZnSe crystals was found to be equivalent to untreated, as-polished crystals, with an LiDT as much as 5 times that of thin-film AR coated ZnSe crystals. Similar results were found for Cr:ZnSe crystals tested at 2940nm, but mixed results were found for pulse testing at 2095nm. In accumulated power CW damage testing at a wavelength of 1908nm, neither untreated nor ARMs treated ZnSe crystals could be damaged after long duratIon exposures at a maximum system intensity of 28.6 MW/cm2, a value many times higher than typically found with thin-film AR coated ZnSe. For Cr:ZnSe gain media, the CW LiDT was observed to be dependent on the focused beam size at the sample surface, with thresholds for untreated and ARMs-treated Cr:ZnSe being nearly equivalent, ranging from 0.6 MW/cm2 for the largest spot size, to 2.1 MW/cm2 for a spot area 4 times smaller. An operatIonal laser test was performed where an ARMs textured Cr:ZnSe crystal operated with higher slope efficiency and 1.5 times the output of a thin-film AR coated crystal in an identical resonator configuratIon.