The Experts below are selected from a list of 45066 Experts worldwide ranked by ideXlab platform

S K Kurinec - One of the best experts on this subject based on the ideXlab platform.

  • three terminal si based negative differential resistance Circuit Element with adjustable peak to valley current ratios using a monolithic vertical integration
    Applied Physics Letters, 2004
    Co-Authors: Sungyong Chung, Phillip E Thompson, S L Rommel, Roger K Lake, Paul R Berger, Niu Jin, S K Kurinec
    Abstract:

    Si-based resonant bipolar transistors are demonstrated by the monolithic vertical integration of Si-based resonant interband tunnel diodes atop the emitter of Si/SiGe heterojunction bipolar transistors (HBTs) on a silicon substrate. In the common emitter configuration, IC versus VCE shows negative differential resistance characteristics. The resulting characteristics are adjustable peak-to-valley current ratios, including infinite and negative values, and tailorable peak current densities by the control of the HBT base current under room temperature operation. With the integrated RITD-HBT combination, latching properties which are the key operating principle for high-speed mixed-signal, memory, and logic Circuitry, are experimentally demonstrated.

  • three terminal si based negative differential resistance Circuit Element with adjustable peak to valley current ratios using a monolithic vertical integration
    Journal of Applied Physics, 2004
    Co-Authors: Sungyong Chung, Phillip E Thompson, S L Rommel, Roger K Lake, Paul R Berger, Niu Jin, S K Kurinec
    Abstract:

    Si-based resonant bipolar transistors are demonstrated by the monolithic vertical integration of Si-based resonant interband tunnel diodes atop the emitter of Si/SiGe heterojunction bipolar transistors ~HBTs! on a silicon substrate. In the common emitter configuration, IC versus VCE shows negative differential resistance characteristics. The resulting characteristics are adjustable peak-to-valley current ratios, including infinite and negative values, and tailorable peak current densities by the control of the HBT base current under room temperature operation. With the integrated RITD-HBT combination, latching properties which are the key operating principle for high-speed mixed-signal, memory, and logic Circuitry, are experimentally demonstrated. © 2004 American Institute of Physics. @DOI: 10.1063/1.1690109#

Sungyong Chung - One of the best experts on this subject based on the ideXlab platform.

  • three terminal si based negative differential resistance Circuit Element with adjustable peak to valley current ratios using a monolithic vertical integration
    Applied Physics Letters, 2004
    Co-Authors: Sungyong Chung, Phillip E Thompson, S L Rommel, Roger K Lake, Paul R Berger, Niu Jin, S K Kurinec
    Abstract:

    Si-based resonant bipolar transistors are demonstrated by the monolithic vertical integration of Si-based resonant interband tunnel diodes atop the emitter of Si/SiGe heterojunction bipolar transistors (HBTs) on a silicon substrate. In the common emitter configuration, IC versus VCE shows negative differential resistance characteristics. The resulting characteristics are adjustable peak-to-valley current ratios, including infinite and negative values, and tailorable peak current densities by the control of the HBT base current under room temperature operation. With the integrated RITD-HBT combination, latching properties which are the key operating principle for high-speed mixed-signal, memory, and logic Circuitry, are experimentally demonstrated.

  • three terminal si based negative differential resistance Circuit Element with adjustable peak to valley current ratios using a monolithic vertical integration
    Journal of Applied Physics, 2004
    Co-Authors: Sungyong Chung, Phillip E Thompson, S L Rommel, Roger K Lake, Paul R Berger, Niu Jin, S K Kurinec
    Abstract:

    Si-based resonant bipolar transistors are demonstrated by the monolithic vertical integration of Si-based resonant interband tunnel diodes atop the emitter of Si/SiGe heterojunction bipolar transistors ~HBTs! on a silicon substrate. In the common emitter configuration, IC versus VCE shows negative differential resistance characteristics. The resulting characteristics are adjustable peak-to-valley current ratios, including infinite and negative values, and tailorable peak current densities by the control of the HBT base current under room temperature operation. With the integrated RITD-HBT combination, latching properties which are the key operating principle for high-speed mixed-signal, memory, and logic Circuitry, are experimentally demonstrated. © 2004 American Institute of Physics. @DOI: 10.1063/1.1690109#

Ali Serpengüzel - One of the best experts on this subject based on the ideXlab platform.

  • Meandering Waveguide Distributed Feedback Lightwave Circuits
    Journal of Lightwave Technology, 2015
    Co-Authors: Ceren B. Dağ, Mehmet Ali Anil, Ali Serpengüzel
    Abstract:

    Meandering waveguide distributed feedback structures are introduced as novel integrated photonic lightwave Circuit Elements, and analyzed in the frequency domain by the transfer matrix method. The directional coupling of the electromagnetic field occurs at the meander coupling points. The meandering loop mirror is the building block of all meandering waveguide-based lightwave Circuit Elements. The simplest uncoupled meandering distributed feedback structure exhibits Rabi splitting in the transmittance spectrum. The symmetric and antisymmetric coupled meandering distributed feedback geometries can be utilized as bandpass, Fano, or Lorentzian filters or Rabi splitters. Meandering waveguide distributed feedback structures with a variety of spectral responses can be designed for a variety of lightwave Circuit Element functions.

S L Rommel - One of the best experts on this subject based on the ideXlab platform.

  • three terminal si based negative differential resistance Circuit Element with adjustable peak to valley current ratios using a monolithic vertical integration
    Applied Physics Letters, 2004
    Co-Authors: Sungyong Chung, Phillip E Thompson, S L Rommel, Roger K Lake, Paul R Berger, Niu Jin, S K Kurinec
    Abstract:

    Si-based resonant bipolar transistors are demonstrated by the monolithic vertical integration of Si-based resonant interband tunnel diodes atop the emitter of Si/SiGe heterojunction bipolar transistors (HBTs) on a silicon substrate. In the common emitter configuration, IC versus VCE shows negative differential resistance characteristics. The resulting characteristics are adjustable peak-to-valley current ratios, including infinite and negative values, and tailorable peak current densities by the control of the HBT base current under room temperature operation. With the integrated RITD-HBT combination, latching properties which are the key operating principle for high-speed mixed-signal, memory, and logic Circuitry, are experimentally demonstrated.

  • three terminal si based negative differential resistance Circuit Element with adjustable peak to valley current ratios using a monolithic vertical integration
    Journal of Applied Physics, 2004
    Co-Authors: Sungyong Chung, Phillip E Thompson, S L Rommel, Roger K Lake, Paul R Berger, Niu Jin, S K Kurinec
    Abstract:

    Si-based resonant bipolar transistors are demonstrated by the monolithic vertical integration of Si-based resonant interband tunnel diodes atop the emitter of Si/SiGe heterojunction bipolar transistors ~HBTs! on a silicon substrate. In the common emitter configuration, IC versus VCE shows negative differential resistance characteristics. The resulting characteristics are adjustable peak-to-valley current ratios, including infinite and negative values, and tailorable peak current densities by the control of the HBT base current under room temperature operation. With the integrated RITD-HBT combination, latching properties which are the key operating principle for high-speed mixed-signal, memory, and logic Circuitry, are experimentally demonstrated. © 2004 American Institute of Physics. @DOI: 10.1063/1.1690109#

Niu Jin - One of the best experts on this subject based on the ideXlab platform.

  • three terminal si based negative differential resistance Circuit Element with adjustable peak to valley current ratios using a monolithic vertical integration
    Applied Physics Letters, 2004
    Co-Authors: Sungyong Chung, Phillip E Thompson, S L Rommel, Roger K Lake, Paul R Berger, Niu Jin, S K Kurinec
    Abstract:

    Si-based resonant bipolar transistors are demonstrated by the monolithic vertical integration of Si-based resonant interband tunnel diodes atop the emitter of Si/SiGe heterojunction bipolar transistors (HBTs) on a silicon substrate. In the common emitter configuration, IC versus VCE shows negative differential resistance characteristics. The resulting characteristics are adjustable peak-to-valley current ratios, including infinite and negative values, and tailorable peak current densities by the control of the HBT base current under room temperature operation. With the integrated RITD-HBT combination, latching properties which are the key operating principle for high-speed mixed-signal, memory, and logic Circuitry, are experimentally demonstrated.

  • three terminal si based negative differential resistance Circuit Element with adjustable peak to valley current ratios using a monolithic vertical integration
    Journal of Applied Physics, 2004
    Co-Authors: Sungyong Chung, Phillip E Thompson, S L Rommel, Roger K Lake, Paul R Berger, Niu Jin, S K Kurinec
    Abstract:

    Si-based resonant bipolar transistors are demonstrated by the monolithic vertical integration of Si-based resonant interband tunnel diodes atop the emitter of Si/SiGe heterojunction bipolar transistors ~HBTs! on a silicon substrate. In the common emitter configuration, IC versus VCE shows negative differential resistance characteristics. The resulting characteristics are adjustable peak-to-valley current ratios, including infinite and negative values, and tailorable peak current densities by the control of the HBT base current under room temperature operation. With the integrated RITD-HBT combination, latching properties which are the key operating principle for high-speed mixed-signal, memory, and logic Circuitry, are experimentally demonstrated. © 2004 American Institute of Physics. @DOI: 10.1063/1.1690109#