The Experts below are selected from a list of 24 Experts worldwide ranked by ideXlab platform

I. Hernández-calderón - One of the best experts on this subject based on the ideXlab platform.

  • Near band-edge optical properties of GaAs at interfaces of ZnSe/GaAs/GaAs by phase selection in photoreflectance
    Journal of Applied Physics, 1999
    Co-Authors: M.e. Constantino, Hugo R. Navarro-contreras, B. Salazar-hernández, M. A. Vidal, A. Lastras-martínez, Máximo López-lópez, I. Hernández-calderón
    Abstract:

    GaAs at the ZnSe/GaAs and GaAs/GaAs interfaces of ZnSe/GaAs/GaAs heterostructures is studied by phase selective photoreflectance (PR) spectroscopy. Four samples with ZnSe layers of various thickness were examined. We unambiguously determined the origin of two different features observed in the PR spectra by combining in phase and out of phase measurements, with PR measurements employing excitation lasers with different wavelengths. These two features are found to originate at different regions of the heterostructure. One Contributing transition is a bulk-like Signal, resembling that of bare GaAs, which originates in a region that encompasses the buffer layer/substrate GaAs homointerface. A second Contributing Signal is attributed to a strained region adjacent to the ZnSe/GaAs heterointerface. Both this second Signal and the bulk-like Signal show Franz–Keldysh oscillations that allow us to determine the electric field strength at the ZnSe/GaAs and GaAs/GaAs interfaces. It is found that the electric field s...

M.e. Constantino - One of the best experts on this subject based on the ideXlab platform.

  • Optical properties of GaAs at ZnSe/GaAs/GaAs by phase selection in photoreflectance
    Applications of Photonic Technology 4, 2000
    Co-Authors: M.e. Constantino, B. Salazar-hernández
    Abstract:

    GaAs at the ZnSe/GaAs and GaAs/GaAs interfaces of ZnSe/GaAs/GaAs heterostructures is studied by phase selective photoreflectance (PR) spectroscopy. Four samples with ZnSe layers of various thicknesses were examined. We unambiguously determined the origin of two different features observed in the PR spectra by combining in phase and out of phase measurements, with PR measurements employing excitation lasers with different wavelengths. These two features are found to originate at different regions of the heterostructure. One Contributing transition is a bulk-like Signal, resembling that of bare GaAs, which originates in a region that encompasses the buffer layer/substrate GaAs homointerface. A second Contributing Signal is attributed to a strained region adjacent to the ZnSe/GaAs heterointerface. Both this second Signal and the bulk-like Signal show Franz-Keldysh oscillations that allow us to determine the electric field strength at the ZnSe/GaAs and GaAs/GaAs interfaces. It is found that the electric field strength at the heteromterface is larger than that of the hcmointerface.

  • Near band-edge optical properties of GaAs at interfaces of ZnSe/GaAs/GaAs by phase selection in photoreflectance
    Journal of Applied Physics, 1999
    Co-Authors: M.e. Constantino, Hugo R. Navarro-contreras, B. Salazar-hernández, M. A. Vidal, A. Lastras-martínez, Máximo López-lópez, I. Hernández-calderón
    Abstract:

    GaAs at the ZnSe/GaAs and GaAs/GaAs interfaces of ZnSe/GaAs/GaAs heterostructures is studied by phase selective photoreflectance (PR) spectroscopy. Four samples with ZnSe layers of various thickness were examined. We unambiguously determined the origin of two different features observed in the PR spectra by combining in phase and out of phase measurements, with PR measurements employing excitation lasers with different wavelengths. These two features are found to originate at different regions of the heterostructure. One Contributing transition is a bulk-like Signal, resembling that of bare GaAs, which originates in a region that encompasses the buffer layer/substrate GaAs homointerface. A second Contributing Signal is attributed to a strained region adjacent to the ZnSe/GaAs heterointerface. Both this second Signal and the bulk-like Signal show Franz–Keldysh oscillations that allow us to determine the electric field strength at the ZnSe/GaAs and GaAs/GaAs interfaces. It is found that the electric field s...

B. Salazar-hernández - One of the best experts on this subject based on the ideXlab platform.

  • Optical properties of GaAs at ZnSe/GaAs/GaAs by phase selection in photoreflectance
    Applications of Photonic Technology 4, 2000
    Co-Authors: M.e. Constantino, B. Salazar-hernández
    Abstract:

    GaAs at the ZnSe/GaAs and GaAs/GaAs interfaces of ZnSe/GaAs/GaAs heterostructures is studied by phase selective photoreflectance (PR) spectroscopy. Four samples with ZnSe layers of various thicknesses were examined. We unambiguously determined the origin of two different features observed in the PR spectra by combining in phase and out of phase measurements, with PR measurements employing excitation lasers with different wavelengths. These two features are found to originate at different regions of the heterostructure. One Contributing transition is a bulk-like Signal, resembling that of bare GaAs, which originates in a region that encompasses the buffer layer/substrate GaAs homointerface. A second Contributing Signal is attributed to a strained region adjacent to the ZnSe/GaAs heterointerface. Both this second Signal and the bulk-like Signal show Franz-Keldysh oscillations that allow us to determine the electric field strength at the ZnSe/GaAs and GaAs/GaAs interfaces. It is found that the electric field strength at the heteromterface is larger than that of the hcmointerface.

  • Near band-edge optical properties of GaAs at interfaces of ZnSe/GaAs/GaAs by phase selection in photoreflectance
    Journal of Applied Physics, 1999
    Co-Authors: M.e. Constantino, Hugo R. Navarro-contreras, B. Salazar-hernández, M. A. Vidal, A. Lastras-martínez, Máximo López-lópez, I. Hernández-calderón
    Abstract:

    GaAs at the ZnSe/GaAs and GaAs/GaAs interfaces of ZnSe/GaAs/GaAs heterostructures is studied by phase selective photoreflectance (PR) spectroscopy. Four samples with ZnSe layers of various thickness were examined. We unambiguously determined the origin of two different features observed in the PR spectra by combining in phase and out of phase measurements, with PR measurements employing excitation lasers with different wavelengths. These two features are found to originate at different regions of the heterostructure. One Contributing transition is a bulk-like Signal, resembling that of bare GaAs, which originates in a region that encompasses the buffer layer/substrate GaAs homointerface. A second Contributing Signal is attributed to a strained region adjacent to the ZnSe/GaAs heterointerface. Both this second Signal and the bulk-like Signal show Franz–Keldysh oscillations that allow us to determine the electric field strength at the ZnSe/GaAs and GaAs/GaAs interfaces. It is found that the electric field s...

M. A. Vidal - One of the best experts on this subject based on the ideXlab platform.

  • Near band-edge optical properties of GaAs at interfaces of ZnSe/GaAs/GaAs by phase selection in photoreflectance
    Journal of Applied Physics, 1999
    Co-Authors: M.e. Constantino, Hugo R. Navarro-contreras, B. Salazar-hernández, M. A. Vidal, A. Lastras-martínez, Máximo López-lópez, I. Hernández-calderón
    Abstract:

    GaAs at the ZnSe/GaAs and GaAs/GaAs interfaces of ZnSe/GaAs/GaAs heterostructures is studied by phase selective photoreflectance (PR) spectroscopy. Four samples with ZnSe layers of various thickness were examined. We unambiguously determined the origin of two different features observed in the PR spectra by combining in phase and out of phase measurements, with PR measurements employing excitation lasers with different wavelengths. These two features are found to originate at different regions of the heterostructure. One Contributing transition is a bulk-like Signal, resembling that of bare GaAs, which originates in a region that encompasses the buffer layer/substrate GaAs homointerface. A second Contributing Signal is attributed to a strained region adjacent to the ZnSe/GaAs heterointerface. Both this second Signal and the bulk-like Signal show Franz–Keldysh oscillations that allow us to determine the electric field strength at the ZnSe/GaAs and GaAs/GaAs interfaces. It is found that the electric field s...

A. Lastras-martínez - One of the best experts on this subject based on the ideXlab platform.

  • Near band-edge optical properties of GaAs at interfaces of ZnSe/GaAs/GaAs by phase selection in photoreflectance
    Journal of Applied Physics, 1999
    Co-Authors: M.e. Constantino, Hugo R. Navarro-contreras, B. Salazar-hernández, M. A. Vidal, A. Lastras-martínez, Máximo López-lópez, I. Hernández-calderón
    Abstract:

    GaAs at the ZnSe/GaAs and GaAs/GaAs interfaces of ZnSe/GaAs/GaAs heterostructures is studied by phase selective photoreflectance (PR) spectroscopy. Four samples with ZnSe layers of various thickness were examined. We unambiguously determined the origin of two different features observed in the PR spectra by combining in phase and out of phase measurements, with PR measurements employing excitation lasers with different wavelengths. These two features are found to originate at different regions of the heterostructure. One Contributing transition is a bulk-like Signal, resembling that of bare GaAs, which originates in a region that encompasses the buffer layer/substrate GaAs homointerface. A second Contributing Signal is attributed to a strained region adjacent to the ZnSe/GaAs heterointerface. Both this second Signal and the bulk-like Signal show Franz–Keldysh oscillations that allow us to determine the electric field strength at the ZnSe/GaAs and GaAs/GaAs interfaces. It is found that the electric field s...