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D. J. O. Göransson - One of the best experts on this subject based on the ideXlab platform.
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Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP-InP Core-Shell Nanowires.
Nano letters, 2019Co-Authors: D. J. O. Göransson, Magnus T. Borgström, Yuqing Huang, Maria E. Messing, Dan Hessman, Irina Buyanova, Weimin ChenAbstract:We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAsP-InP Core-Shell nanowires. The Core-Shell nanowires are grown via metal-organic vapor phase epitaxy. The as-grown nanowires are characterized by transmission electron microscopy, X-ray diffraction, micro-photoluminescence (μPL) spectroscopy, and micro-Raman (μ-Raman) spectroscopy measurements. We observe that the Core-Shell nanowires are of wurtzite (WZ) crystal phase and are coherently strained with the core and the shell having the same number of atomic planes in each nanowire. We determine the predominantly uniaxial strains formed in the Core-Shell nanowires along the nanowire growth axis and demonstrate that the strains can be described using an analytical expression. The bandgap energies in the strained WZ InAsP core materials are extracted from the μPL measurements of individual Core-Shell nanowires. The coherently strained Core-Shell nanowires demonstrated in this work offer the potentials for use in constructing novel optoelectronic devices and for development of piezoelectric photovoltaic devices.
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coulomb blockade from the shell of an inp inas core shell nanowire with a triangular cross section
Applied Physics Letters, 2019Co-Authors: D. J. O. Göransson, Magnus T. Borgström, Maria E. Messing, Magnus Heurlin, B Dalelkhan, Simon Abay, V F Maisi, Hongqi XuAbstract:We report on growth of InP-InAs Core-Shell nanowires and demonstration of the formation of single quantum structures, which show the Coulomb blockade effect, over entire lengths of the nanowires. The Core-Shell nanowires are grown by a selective area growth technique via metal-organic vapor phase epitaxy. The as-grown Core-Shell nanowires are found to be of wurtzite crystals. The InP cores have a hexagonal cross section, while the InAs shells are grown preferentially on specific { 1 1 ¯ 00} facets, leading to the formation of the Core-Shell nanowires with an overall triangular cross section. The grown Core-Shell nanowires are transferred onto a Si/SiO2 substrate and then contacted by several narrow metal electrodes. Low-temperature transport measurements show the Coulomb-blockade effect. We analyze the measured gate capacitance and single electron charging energy of the devices and demonstrate that a quantum structure which shows the Coulomb blockade effect of a many-electron quantum dot is formed over the full length of a single Core-Shell nanowire and consists of the entire InAs shell in the nanowire.We report on growth of InP-InAs Core-Shell nanowires and demonstration of the formation of single quantum structures, which show the Coulomb blockade effect, over entire lengths of the nanowires. The Core-Shell nanowires are grown by a selective area growth technique via metal-organic vapor phase epitaxy. The as-grown Core-Shell nanowires are found to be of wurtzite crystals. The InP cores have a hexagonal cross section, while the InAs shells are grown preferentially on specific { 1 1 ¯ 00} facets, leading to the formation of the Core-Shell nanowires with an overall triangular cross section. The grown Core-Shell nanowires are transferred onto a Si/SiO2 substrate and then contacted by several narrow metal electrodes. Low-temperature transport measurements show the Coulomb-blockade effect. We analyze the measured gate capacitance and single electron charging energy of the devices and demonstrate that a quantum structure which shows the Coulomb blockade effect of a many-electron quantum dot is formed ove...
Maria E. Messing - One of the best experts on this subject based on the ideXlab platform.
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Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP-InP Core-Shell Nanowires.
Nano letters, 2019Co-Authors: D. J. O. Göransson, Magnus T. Borgström, Yuqing Huang, Maria E. Messing, Dan Hessman, Irina Buyanova, Weimin ChenAbstract:We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAsP-InP Core-Shell nanowires. The Core-Shell nanowires are grown via metal-organic vapor phase epitaxy. The as-grown nanowires are characterized by transmission electron microscopy, X-ray diffraction, micro-photoluminescence (μPL) spectroscopy, and micro-Raman (μ-Raman) spectroscopy measurements. We observe that the Core-Shell nanowires are of wurtzite (WZ) crystal phase and are coherently strained with the core and the shell having the same number of atomic planes in each nanowire. We determine the predominantly uniaxial strains formed in the Core-Shell nanowires along the nanowire growth axis and demonstrate that the strains can be described using an analytical expression. The bandgap energies in the strained WZ InAsP core materials are extracted from the μPL measurements of individual Core-Shell nanowires. The coherently strained Core-Shell nanowires demonstrated in this work offer the potentials for use in constructing novel optoelectronic devices and for development of piezoelectric photovoltaic devices.
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coulomb blockade from the shell of an inp inas core shell nanowire with a triangular cross section
Applied Physics Letters, 2019Co-Authors: D. J. O. Göransson, Magnus T. Borgström, Maria E. Messing, Magnus Heurlin, B Dalelkhan, Simon Abay, V F Maisi, Hongqi XuAbstract:We report on growth of InP-InAs Core-Shell nanowires and demonstration of the formation of single quantum structures, which show the Coulomb blockade effect, over entire lengths of the nanowires. The Core-Shell nanowires are grown by a selective area growth technique via metal-organic vapor phase epitaxy. The as-grown Core-Shell nanowires are found to be of wurtzite crystals. The InP cores have a hexagonal cross section, while the InAs shells are grown preferentially on specific { 1 1 ¯ 00} facets, leading to the formation of the Core-Shell nanowires with an overall triangular cross section. The grown Core-Shell nanowires are transferred onto a Si/SiO2 substrate and then contacted by several narrow metal electrodes. Low-temperature transport measurements show the Coulomb-blockade effect. We analyze the measured gate capacitance and single electron charging energy of the devices and demonstrate that a quantum structure which shows the Coulomb blockade effect of a many-electron quantum dot is formed over the full length of a single Core-Shell nanowire and consists of the entire InAs shell in the nanowire.We report on growth of InP-InAs Core-Shell nanowires and demonstration of the formation of single quantum structures, which show the Coulomb blockade effect, over entire lengths of the nanowires. The Core-Shell nanowires are grown by a selective area growth technique via metal-organic vapor phase epitaxy. The as-grown Core-Shell nanowires are found to be of wurtzite crystals. The InP cores have a hexagonal cross section, while the InAs shells are grown preferentially on specific { 1 1 ¯ 00} facets, leading to the formation of the Core-Shell nanowires with an overall triangular cross section. The grown Core-Shell nanowires are transferred onto a Si/SiO2 substrate and then contacted by several narrow metal electrodes. Low-temperature transport measurements show the Coulomb-blockade effect. We analyze the measured gate capacitance and single electron charging energy of the devices and demonstrate that a quantum structure which shows the Coulomb blockade effect of a many-electron quantum dot is formed ove...
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Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP–InP Core–Shell Nanowires
2019Co-Authors: J. O. D. Göransson, Maria E. Messing, Dan Hessman, Irina Buyanova, M. T. Borgström, Y. Q. Huang, W. M. ChenAbstract:We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAsP–InP core–shell nanowires. The core–shell nanowires are grown via metal–organic vapor phase epitaxy. The as-grown nanowires are characterized by transmission electron microscopy, X-ray diffraction, micro-photoluminescence (μPL) spectroscopy, and micro-Raman (μ-Raman) spectroscopy measurements. We observe that the core–shell nanowires are of wurtzite (WZ) crystal phase and are coherently strained with the core and the shell having the same number of atomic planes in each nanowire. We determine the predominantly uniaxial strains formed in the core–shell nanowires along the nanowire growth axis and demonstrate that the strains can be described using an analytical expression. The bandgap energies in the strained WZ InAsP core materials are extracted from the μPL measurements of individual core–shell nanowires. The coherently strained core–shell nanowires demonstrated in this work offer the potentials for use in constructing novel optoelectronic devices and for development of piezoelectric photovoltaic devices
Weimin Chen - One of the best experts on this subject based on the ideXlab platform.
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Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP-InP Core-Shell Nanowires.
Nano letters, 2019Co-Authors: D. J. O. Göransson, Magnus T. Borgström, Yuqing Huang, Maria E. Messing, Dan Hessman, Irina Buyanova, Weimin ChenAbstract:We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAsP-InP Core-Shell nanowires. The Core-Shell nanowires are grown via metal-organic vapor phase epitaxy. The as-grown nanowires are characterized by transmission electron microscopy, X-ray diffraction, micro-photoluminescence (μPL) spectroscopy, and micro-Raman (μ-Raman) spectroscopy measurements. We observe that the Core-Shell nanowires are of wurtzite (WZ) crystal phase and are coherently strained with the core and the shell having the same number of atomic planes in each nanowire. We determine the predominantly uniaxial strains formed in the Core-Shell nanowires along the nanowire growth axis and demonstrate that the strains can be described using an analytical expression. The bandgap energies in the strained WZ InAsP core materials are extracted from the μPL measurements of individual Core-Shell nanowires. The coherently strained Core-Shell nanowires demonstrated in this work offer the potentials for use in constructing novel optoelectronic devices and for development of piezoelectric photovoltaic devices.
Magnus T. Borgström - One of the best experts on this subject based on the ideXlab platform.
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Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP-InP Core-Shell Nanowires.
Nano letters, 2019Co-Authors: D. J. O. Göransson, Magnus T. Borgström, Yuqing Huang, Maria E. Messing, Dan Hessman, Irina Buyanova, Weimin ChenAbstract:We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAsP-InP Core-Shell nanowires. The Core-Shell nanowires are grown via metal-organic vapor phase epitaxy. The as-grown nanowires are characterized by transmission electron microscopy, X-ray diffraction, micro-photoluminescence (μPL) spectroscopy, and micro-Raman (μ-Raman) spectroscopy measurements. We observe that the Core-Shell nanowires are of wurtzite (WZ) crystal phase and are coherently strained with the core and the shell having the same number of atomic planes in each nanowire. We determine the predominantly uniaxial strains formed in the Core-Shell nanowires along the nanowire growth axis and demonstrate that the strains can be described using an analytical expression. The bandgap energies in the strained WZ InAsP core materials are extracted from the μPL measurements of individual Core-Shell nanowires. The coherently strained Core-Shell nanowires demonstrated in this work offer the potentials for use in constructing novel optoelectronic devices and for development of piezoelectric photovoltaic devices.
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coulomb blockade from the shell of an inp inas core shell nanowire with a triangular cross section
Applied Physics Letters, 2019Co-Authors: D. J. O. Göransson, Magnus T. Borgström, Maria E. Messing, Magnus Heurlin, B Dalelkhan, Simon Abay, V F Maisi, Hongqi XuAbstract:We report on growth of InP-InAs Core-Shell nanowires and demonstration of the formation of single quantum structures, which show the Coulomb blockade effect, over entire lengths of the nanowires. The Core-Shell nanowires are grown by a selective area growth technique via metal-organic vapor phase epitaxy. The as-grown Core-Shell nanowires are found to be of wurtzite crystals. The InP cores have a hexagonal cross section, while the InAs shells are grown preferentially on specific { 1 1 ¯ 00} facets, leading to the formation of the Core-Shell nanowires with an overall triangular cross section. The grown Core-Shell nanowires are transferred onto a Si/SiO2 substrate and then contacted by several narrow metal electrodes. Low-temperature transport measurements show the Coulomb-blockade effect. We analyze the measured gate capacitance and single electron charging energy of the devices and demonstrate that a quantum structure which shows the Coulomb blockade effect of a many-electron quantum dot is formed over the full length of a single Core-Shell nanowire and consists of the entire InAs shell in the nanowire.We report on growth of InP-InAs Core-Shell nanowires and demonstration of the formation of single quantum structures, which show the Coulomb blockade effect, over entire lengths of the nanowires. The Core-Shell nanowires are grown by a selective area growth technique via metal-organic vapor phase epitaxy. The as-grown Core-Shell nanowires are found to be of wurtzite crystals. The InP cores have a hexagonal cross section, while the InAs shells are grown preferentially on specific { 1 1 ¯ 00} facets, leading to the formation of the Core-Shell nanowires with an overall triangular cross section. The grown Core-Shell nanowires are transferred onto a Si/SiO2 substrate and then contacted by several narrow metal electrodes. Low-temperature transport measurements show the Coulomb-blockade effect. We analyze the measured gate capacitance and single electron charging energy of the devices and demonstrate that a quantum structure which shows the Coulomb blockade effect of a many-electron quantum dot is formed ove...
Hongqi Xu - One of the best experts on this subject based on the ideXlab platform.
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coulomb blockade from the shell of an inp inas core shell nanowire with a triangular cross section
Applied Physics Letters, 2019Co-Authors: D. J. O. Göransson, Magnus T. Borgström, Maria E. Messing, Magnus Heurlin, B Dalelkhan, Simon Abay, V F Maisi, Hongqi XuAbstract:We report on growth of InP-InAs Core-Shell nanowires and demonstration of the formation of single quantum structures, which show the Coulomb blockade effect, over entire lengths of the nanowires. The Core-Shell nanowires are grown by a selective area growth technique via metal-organic vapor phase epitaxy. The as-grown Core-Shell nanowires are found to be of wurtzite crystals. The InP cores have a hexagonal cross section, while the InAs shells are grown preferentially on specific { 1 1 ¯ 00} facets, leading to the formation of the Core-Shell nanowires with an overall triangular cross section. The grown Core-Shell nanowires are transferred onto a Si/SiO2 substrate and then contacted by several narrow metal electrodes. Low-temperature transport measurements show the Coulomb-blockade effect. We analyze the measured gate capacitance and single electron charging energy of the devices and demonstrate that a quantum structure which shows the Coulomb blockade effect of a many-electron quantum dot is formed over the full length of a single Core-Shell nanowire and consists of the entire InAs shell in the nanowire.We report on growth of InP-InAs Core-Shell nanowires and demonstration of the formation of single quantum structures, which show the Coulomb blockade effect, over entire lengths of the nanowires. The Core-Shell nanowires are grown by a selective area growth technique via metal-organic vapor phase epitaxy. The as-grown Core-Shell nanowires are found to be of wurtzite crystals. The InP cores have a hexagonal cross section, while the InAs shells are grown preferentially on specific { 1 1 ¯ 00} facets, leading to the formation of the Core-Shell nanowires with an overall triangular cross section. The grown Core-Shell nanowires are transferred onto a Si/SiO2 substrate and then contacted by several narrow metal electrodes. Low-temperature transport measurements show the Coulomb-blockade effect. We analyze the measured gate capacitance and single electron charging energy of the devices and demonstrate that a quantum structure which shows the Coulomb blockade effect of a many-electron quantum dot is formed ove...