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T G Andersson - One of the best experts on this subject based on the ideXlab platform.
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contradictory increase of Critical Layer Thickness in inxga1 xsb gaas heterostructures grown by mbe
Ultramicroscopy, 1993Co-Authors: Eva Olsson, Shumin Wang, M J Ekenstedt, H Qu, T G AnderssonAbstract:Abstract The microstructure and lattice-mismatch accommodation in InxGa1-xSb/GaAs heterostructures grown by MBE have been studied using transmission electron microscopy. It was found that the Critical Thickness below which homogeneously strained Layers are obtained increases with increasing In content. This is in contradiction to what would be expected since the lattice mismatch increases simultaneously. In the InSb heterostructures three-dimensional growth ensued in 3-monoLayer-thick Layers while 60° misfit dislocations that glide on the {111} planes giving rise to stacking faults appeared in the 4-monoLayer-thick Layer. Both islands and misfit dislocations were observed in 2-monoLayer-thick Layers of the In0.25Ga0.75Sb heterostructures.
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measurements of the inxga1 xas gaas Critical Layer Thickness
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, 1991Co-Authors: T G Andersson, M J Ekenstedt, V D Kulakovskii, Shumin WangAbstract:The Critical Layer Thickness (CLT) for InxGaixAs/GaAs has been studied by photoluminescence transmission electron microscopy and reflection high energy electron diffraction with the composition x and growth temperatures as parameters. The obtained values of CLT have been compared with theoretical models. None of them coincide with the experimental results. For x 0. 3 the CLT varies rapidly with x while the dependence is slow for x 3. Here the CLT is small typically a few monoLayers. The CLT is governed by dislocation generation for x 0. 3 and by the onset of three dimensional growth for x 3.
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Temperature‐dependent Critical Layer Thickness for In0.36Ga0.64As/GaAs single quantum wells
Applied Physics Letters, 1991Co-Authors: M J Ekenstedt, Shumin Wang, T G AnderssonAbstract:A series of In0.36Ga0.64As/GaAs single quantum wells were grown by molecular beam epitaxy to investigate the dependence of the Critical Layer Thickness (CLT) on growth temperature. The Layers were grown between 410 and 590 °C. Photoluminescence was then used to determine the CLT as the onset of three‐dimensional growth which occurs at 15 A for 570 °C and at 55 A when grown at 470 °C. Our results indicate a strong and nearly linear temperature dependence for the CLT.
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temperature dependent Critical Layer Thickness for in0 36ga0 64as gaas single quantum wells
Applied Physics Letters, 1991Co-Authors: M J Ekenstedt, Shumin Wang, T G AnderssonAbstract:A series of In0.36Ga0.64As/GaAs single quantum wells were grown by molecular beam epitaxy to investigate the dependence of the Critical Layer Thickness (CLT) on growth temperature. The Layers were grown between 410 and 590 °C. Photoluminescence was then used to determine the CLT as the onset of three‐dimensional growth which occurs at 15 A for 570 °C and at 55 A when grown at 470 °C. Our results indicate a strong and nearly linear temperature dependence for the CLT.
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Critical Layer Thickness in inzxga1 xas gaas quantum wells studied by photoluminescence and transmission electron microscopy
Superlattices and Microstructures, 1991Co-Authors: Shumin Wang, T G Andersson, V D KulakovskiiAbstract:Abstract Critical Layer Thickness (CLT), in strained InxGa1−xAs/GaAs single and multiple quantum wells, has been investigated by photoluminescence and transmission electron microscopy techniques. A carefull and detailed analysis of the experimental data shows that a transition from two-dimensional to three-dimensional growth occurs before development of strain released misfit dislocations for x>0.3. The CLT, which is based on this change, is found to decrease with In content and has a break at x=0.35.
Shumin Wang - One of the best experts on this subject based on the ideXlab platform.
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Critical Layer Thickness in InzxGa1−xAs/GaAs quantum wells studied by photoluminescence and transmission electron microscopy
Superlattices and Microstructures, 2003Co-Authors: Shumin Wang, Thorwald G. Andersson, V D KulakovskiiAbstract:Abstract Critical Layer Thickness (CLT), in strained InxGa1−xAs/GaAs single and multiple quantum wells, has been investigated by photoluminescence and transmission electron microscopy techniques. A carefull and detailed analysis of the experimental data shows that a transition from two-dimensional to three-dimensional growth occurs before development of strain released misfit dislocations for x>0.3. The CLT, which is based on this change, is found to decrease with In content and has a break at x=0.35.
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contradictory increase of Critical Layer Thickness in inxga1 xsb gaas heterostructures grown by mbe
Ultramicroscopy, 1993Co-Authors: Eva Olsson, Shumin Wang, M J Ekenstedt, H Qu, T G AnderssonAbstract:Abstract The microstructure and lattice-mismatch accommodation in InxGa1-xSb/GaAs heterostructures grown by MBE have been studied using transmission electron microscopy. It was found that the Critical Thickness below which homogeneously strained Layers are obtained increases with increasing In content. This is in contradiction to what would be expected since the lattice mismatch increases simultaneously. In the InSb heterostructures three-dimensional growth ensued in 3-monoLayer-thick Layers while 60° misfit dislocations that glide on the {111} planes giving rise to stacking faults appeared in the 4-monoLayer-thick Layer. Both islands and misfit dislocations were observed in 2-monoLayer-thick Layers of the In0.25Ga0.75Sb heterostructures.
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Contradictory increase of Critical Layer Thickness in InxGa1−xSb/GaAs heterostructures grown by MBE
Ultramicroscopy, 1993Co-Authors: Eva Olsson, M J Ekenstedt, Shumin Wang, H Qu, Thorvald AnderssonAbstract:Abstract The microstructure and lattice-mismatch accommodation in In x Ga 1- x Sb/GaAs heterostructures grown by MBE have been studied using transmission electron microscopy. It was found that the Critical Thickness below which homogeneously strained Layers are obtained increases with increasing In content. This is in contradiction to what would be expected since the lattice mismatch increases simultaneously. In the InSb heterostructures three-dimensional growth ensued in 3-monoLayer-thick Layers while 60° misfit dislocations that glide on the {111} planes giving rise to stacking faults appeared in the 4-monoLayer-thick Layer. Both islands and misfit dislocations were observed in 2-monoLayer-thick Layers of the In 0.25 Ga 0.75 Sb heterostructures.
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measurements of the inxga1 xas gaas Critical Layer Thickness
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, 1991Co-Authors: T G Andersson, M J Ekenstedt, V D Kulakovskii, Shumin WangAbstract:The Critical Layer Thickness (CLT) for InxGaixAs/GaAs has been studied by photoluminescence transmission electron microscopy and reflection high energy electron diffraction with the composition x and growth temperatures as parameters. The obtained values of CLT have been compared with theoretical models. None of them coincide with the experimental results. For x 0. 3 the CLT varies rapidly with x while the dependence is slow for x 3. Here the CLT is small typically a few monoLayers. The CLT is governed by dislocation generation for x 0. 3 and by the onset of three dimensional growth for x 3.
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Measurements of the InxGa1-xAs/GaAs Critical Layer Thickness
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, 1991Co-Authors: Thorvald Andersson, M J Ekenstedt, V D Kulakovskii, Shumin WangAbstract:The Critical Layer Thickness (CLT) for InxGaixAs/GaAs has been studied by photoluminescence transmission electron microscopy and reflection high energy electron diffraction with the composition x and growth temperatures as parameters. The obtained values of CLT have been compared with theoretical models. None of them coincide with the experimental results. For x 0. 3 the CLT varies rapidly with x while the dependence is slow for x 3. Here the CLT is small typically a few monoLayers. The CLT is governed by dislocation generation for x 0. 3 and by the onset of three dimensional growth for x 3.
Roger Aulombard - One of the best experts on this subject based on the ideXlab platform.
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Critical Layer Thickness in MOCVD grown InGaAs-GaAs strained quantum wells
2017Co-Authors: Xb Zhang, Olivier Briot, Bernard Gil, Roger AulombardAbstract:A series of In0.14Ga0.86As-GaAs quantum well structures have been grown by metal organic chemical vapor deposition (MOCVD). The measured dependence of photoluminescence (PL) energies on well width is compared with calculation. By the energy shift, line width and intensity change of PL spectroscopy, Critical Layer Thickness has been identified. The Critical Layer Thickness obtained for MOCVD grown material was found in agreement with theoretical value, but is smaller than molecular beam epitaxy grown ones.
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Critical Layer Thickness IN METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN INGAAS/GAAS STRAINED QUANTUM-WELLS
Journal of Applied Physics, 2017Co-Authors: Xb Zhang, Olivier Briot, Bernard Gil, Roger AulombardAbstract:A series of In0.14Ga0.86As/GaAs quantum well structures have been grown by metal organic chemical vapor deposition (MOCVD). The measured dependence of photoluminescence (PL) energies on well width is compared with calculation. By the energy shift, line width, and intensity change of PL spectroscopy, Critical Layer Thickness has been identified. The Critical Layer Thickness obtained for MOCVD-grown material was found in agreement with theoretical value, but is smaller than material grown by molecular beam epitaxy.
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Critical Layer Thickness in mocvd grown ingaasgaas strained quantum wells
Materials Science and Engineering B-advanced Functional Solid-state Materials, 1995Co-Authors: Xiaobo Zhang, Olivier Briot, Roger AulombardAbstract:Abstract A series of In0.14Ga0.86AsGaAs quantum well structures have been grown by metal organic chemical vapor deposition (MOCVD). The measured dependence of photoluminescence (PL) energies on well width is compared with calculation. By the energy shift, line width and intensity change of PL spectroscopy, Critical Layer Thickness has been identified. The Critical Layer Thickness obtained for MOCVD grown material was found in agreement with theoretical value, but is smaller than molecular beam epitaxy grown ones.
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Critical Layer Thickness in metal organic chemical vapor deposition grown ingaas gaas strained quantum wells
Journal of Applied Physics, 1995Co-Authors: Xiaobo Zhang, Olivier Briot, Roger AulombardAbstract:A series of In0.14Ga0.86As/GaAs quantum well structures have been grown by metal organic chemical vapor deposition (MOCVD). The measured dependence of photoluminescence (PL) energies on well width is compared with calculation. By the energy shift, line width, and intensity change of PL spectroscopy, Critical Layer Thickness has been identified. The Critical Layer Thickness obtained for MOCVD‐grown material was found in agreement with theoretical value, but is smaller than material grown by molecular beam epitaxy.
Á. Nemcsics - One of the best experts on this subject based on the ideXlab platform.
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Growth control of the strained InGaAs/GaAs heterostructures for device purposes by decay of RHEED oscillation
2020Co-Authors: Á. NemcsicsAbstract:In this work we have looked for the relation between the observed decay of reflection high energy electron diffraction intensity oscillation and Critical Layer Thickness in case of strained In x Ga 1-x As/GaAs structures. The value of decay time constant of oscillation depends on growth parameters and on mismatch, too. Remarkable correspondences were found between the value of mismatch and the decay time constant, The Critical Layer Thickness determined in this way shows good agreement with other results in the literature.
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valuing of the Critical Layer Thickness from the deading time constant of rheed oscillation in the case of inxga1 xas gaas heterojunction
Applied Surface Science, 2002Co-Authors: Á. NemcsicsAbstract:In this work, we have looked for the correlation between the observed decay of reflection high-energy electron diffraction intensity oscillation and the Critical Layer Thickness in the case of strained InxGa1−xAs/GaAs heterojunctions. The value of deading time constant of oscillation depends on the mismatch and on growth parameters, too. The decay of oscillation was described by two deading time constants which are responsible for the influences of the parameters mentioned above. The Critical Layer Thickness was valued from the deading time constant responsible for the influence of mismatch only. The Critical Layer Thickness determined this way shows good agreement with the theoretical model.
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Valuing of the Critical Layer Thickness from the deading time constant of RHEED oscillation in the case of InxGa1−xAs/GaAs heterojunction
Applied Surface Science, 2002Co-Authors: Á. NemcsicsAbstract:In this work, we have looked for the correlation between the observed decay of reflection high-energy electron diffraction intensity oscillation and the Critical Layer Thickness in the case of strained InxGa1−xAs/GaAs heterojunctions. The value of deading time constant of oscillation depends on the mismatch and on growth parameters, too. The decay of oscillation was described by two deading time constants which are responsible for the influences of the parameters mentioned above. The Critical Layer Thickness was valued from the deading time constant responsible for the influence of mismatch only. The Critical Layer Thickness determined this way shows good agreement with the theoretical model.
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Correlation between the Critical Layer Thickness and the decaytime constant of RHEED oscillations in strained InxGa1−xAs/GaAs structures
Thin Solid Films, 2000Co-Authors: Á. NemcsicsAbstract:Abstract In this work we have investigated the relation between the observed decay of reflection high energy electron diffraction intensity oscillations and Critical Layer Thickness in case of strained InxGa1−xAs/GaAs structures. The value of decay time constant of oscillations depends on growth parameters and on lattice mismatch, too. Remarkable correspondences were found between the value of mismatch and the decay time constant. The Critical Layer Thickness determined in this way is in good agreement with other results known from the literature.
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correlation between the Critical Layer Thickness and the decaytime constant of rheed oscillations in strained inxga1 xas gaas structures
Thin Solid Films, 2000Co-Authors: Á. NemcsicsAbstract:Abstract In this work we have investigated the relation between the observed decay of reflection high energy electron diffraction intensity oscillations and Critical Layer Thickness in case of strained InxGa1−xAs/GaAs structures. The value of decay time constant of oscillations depends on growth parameters and on lattice mismatch, too. Remarkable correspondences were found between the value of mismatch and the decay time constant. The Critical Layer Thickness determined in this way is in good agreement with other results known from the literature.
V D Kulakovskii - One of the best experts on this subject based on the ideXlab platform.
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Critical Layer Thickness in InzxGa1−xAs/GaAs quantum wells studied by photoluminescence and transmission electron microscopy
Superlattices and Microstructures, 2003Co-Authors: Shumin Wang, Thorwald G. Andersson, V D KulakovskiiAbstract:Abstract Critical Layer Thickness (CLT), in strained InxGa1−xAs/GaAs single and multiple quantum wells, has been investigated by photoluminescence and transmission electron microscopy techniques. A carefull and detailed analysis of the experimental data shows that a transition from two-dimensional to three-dimensional growth occurs before development of strain released misfit dislocations for x>0.3. The CLT, which is based on this change, is found to decrease with In content and has a break at x=0.35.
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measurements of the inxga1 xas gaas Critical Layer Thickness
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, 1991Co-Authors: T G Andersson, M J Ekenstedt, V D Kulakovskii, Shumin WangAbstract:The Critical Layer Thickness (CLT) for InxGaixAs/GaAs has been studied by photoluminescence transmission electron microscopy and reflection high energy electron diffraction with the composition x and growth temperatures as parameters. The obtained values of CLT have been compared with theoretical models. None of them coincide with the experimental results. For x 0. 3 the CLT varies rapidly with x while the dependence is slow for x 3. Here the CLT is small typically a few monoLayers. The CLT is governed by dislocation generation for x 0. 3 and by the onset of three dimensional growth for x 3.
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Measurements of the InxGa1-xAs/GaAs Critical Layer Thickness
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, 1991Co-Authors: Thorvald Andersson, M J Ekenstedt, V D Kulakovskii, Shumin WangAbstract:The Critical Layer Thickness (CLT) for InxGaixAs/GaAs has been studied by photoluminescence transmission electron microscopy and reflection high energy electron diffraction with the composition x and growth temperatures as parameters. The obtained values of CLT have been compared with theoretical models. None of them coincide with the experimental results. For x 0. 3 the CLT varies rapidly with x while the dependence is slow for x 3. Here the CLT is small typically a few monoLayers. The CLT is governed by dislocation generation for x 0. 3 and by the onset of three dimensional growth for x 3.
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Critical Layer Thickness in inzxga1 xas gaas quantum wells studied by photoluminescence and transmission electron microscopy
Superlattices and Microstructures, 1991Co-Authors: Shumin Wang, T G Andersson, V D KulakovskiiAbstract:Abstract Critical Layer Thickness (CLT), in strained InxGa1−xAs/GaAs single and multiple quantum wells, has been investigated by photoluminescence and transmission electron microscopy techniques. A carefull and detailed analysis of the experimental data shows that a transition from two-dimensional to three-dimensional growth occurs before development of strain released misfit dislocations for x>0.3. The CLT, which is based on this change, is found to decrease with In content and has a break at x=0.35.