The Experts below are selected from a list of 9738 Experts worldwide ranked by ideXlab platform

A. P. Stupak - One of the best experts on this subject based on the ideXlab platform.

  • Lifetimes of anion vacancies and F2+ color centers in lithium fluoride following irradiation
    Journal of Applied Spectroscopy, 2010
    Co-Authors: A. P. Voitovich, V. S. Kalinov, N. N. Naumenko, L. P. Runets, A. P. Stupak
    Abstract:

    A method is developed for determining the mean lifetime of anion vacancies in dielectric Crystals following irradiation. This method is used to study the temporal kinetics of the concentrations of vacancies and F 2 + color centers in lithium fluoride Crystals irradiated by ionizing radiation. It is then possible to study the dependences of the Vacancy lifetime on the concentration of F 1 color centers, temperature, and impurity content of a Crystal. Vacancy and F 2 + color lifetimes determined by this method are given.

  • Lifetimes of anion vacancies and F _2 ^+ color centers in lithium fluoride following irradiation
    Journal of Applied Spectroscopy, 2010
    Co-Authors: A. P. Voitovich, V. S. Kalinov, N. N. Naumenko, L. P. Runets, A. P. Stupak
    Abstract:

    A method is developed for determining the mean lifetime of anion vacancies in dielectric Crystals following irradiation. This method is used to study the temporal kinetics of the concentrations of vacancies and F _2 ^+ color centers in lithium fluoride Crystals irradiated by ionizing radiation. It is then possible to study the dependences of the Vacancy lifetime on the concentration of F _1 color centers, temperature, and impurity content of a Crystal. Vacancy and F _2 ^+ color lifetimes determined by this method are given.

J. S. Custer - One of the best experts on this subject based on the ideXlab platform.

  • Evidence for vacancies in amorphous silicon.
    Physical review letters, 1992
    Co-Authors: G. N. Van Den Hoven, Z. N. Liang, L. Niesen, J. S. Custer
    Abstract:

    The microscopic nature of defects in ion-implanted amorphous Si has been probed using M\"ossbauer spectroscopy. Analysis of the $^{119}\mathrm{Sn}$ M\"ossbauer spectra obtained from $^{119}\mathrm{Sb}$ in amorphous Si requires two independent sites for Sb in amorphous Si. Direct comparison of the isomer shifts and Debye temperatures of these lines with data from Crystal Si demonstrates that the sites are a substitutional network site and an Sb-Vacancy complex. The data suggest that point defects analogous to the Crystal Vacancy exist in the amorphous Si structure.

A. P. Voitovich - One of the best experts on this subject based on the ideXlab platform.

  • Lifetimes of anion vacancies and F2+ color centers in lithium fluoride following irradiation
    Journal of Applied Spectroscopy, 2010
    Co-Authors: A. P. Voitovich, V. S. Kalinov, N. N. Naumenko, L. P. Runets, A. P. Stupak
    Abstract:

    A method is developed for determining the mean lifetime of anion vacancies in dielectric Crystals following irradiation. This method is used to study the temporal kinetics of the concentrations of vacancies and F 2 + color centers in lithium fluoride Crystals irradiated by ionizing radiation. It is then possible to study the dependences of the Vacancy lifetime on the concentration of F 1 color centers, temperature, and impurity content of a Crystal. Vacancy and F 2 + color lifetimes determined by this method are given.

  • Lifetimes of anion vacancies and F _2 ^+ color centers in lithium fluoride following irradiation
    Journal of Applied Spectroscopy, 2010
    Co-Authors: A. P. Voitovich, V. S. Kalinov, N. N. Naumenko, L. P. Runets, A. P. Stupak
    Abstract:

    A method is developed for determining the mean lifetime of anion vacancies in dielectric Crystals following irradiation. This method is used to study the temporal kinetics of the concentrations of vacancies and F _2 ^+ color centers in lithium fluoride Crystals irradiated by ionizing radiation. It is then possible to study the dependences of the Vacancy lifetime on the concentration of F _1 color centers, temperature, and impurity content of a Crystal. Vacancy and F _2 ^+ color lifetimes determined by this method are given.

G. N. Van Den Hoven - One of the best experts on this subject based on the ideXlab platform.

  • Evidence for vacancies in amorphous silicon.
    Physical review letters, 1992
    Co-Authors: G. N. Van Den Hoven, Z. N. Liang, L. Niesen, J. S. Custer
    Abstract:

    The microscopic nature of defects in ion-implanted amorphous Si has been probed using M\"ossbauer spectroscopy. Analysis of the $^{119}\mathrm{Sn}$ M\"ossbauer spectra obtained from $^{119}\mathrm{Sb}$ in amorphous Si requires two independent sites for Sb in amorphous Si. Direct comparison of the isomer shifts and Debye temperatures of these lines with data from Crystal Si demonstrates that the sites are a substitutional network site and an Sb-Vacancy complex. The data suggest that point defects analogous to the Crystal Vacancy exist in the amorphous Si structure.

Rafal Kozubski - One of the best experts on this subject based on the ideXlab platform.

  • SiC (0001) and (0001¯) surfaces diffusion parameters estimated by means of atomistic Kinetic Monte Carlo simulations
    Materials Letters, 2014
    Co-Authors: Miroslaw Kozlowski, Piotr Sowa, Andrzej Biborski, Rafal Kozubski
    Abstract:

    Abstract Diffusion parameters of Si and C on (0001) and ( 000 1 ¯ ) SiC surfaces were estimated using an effective method based on Kinetic Monte Carlo (KMC) simulations involving activation barriers for atomic migration calculated using Nudged Elastic Band – Climbing Image algorithm implemented with Analytic Bond-Order potentials derived for the SiC. Simulated was a model Crystal/Vacancy “surface diffusion couple” and the KMC results were analysed within the Matano formalism. The MC-time was rescaled into real-time units by comparing the results of KMC simulations of Si (001) surface diffusion in Si Crystal with the experimental data.