The Experts below are selected from a list of 288 Experts worldwide ranked by ideXlab platform
Z. Diao - One of the best experts on this subject based on the ideXlab platform.
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critical Current Distribution in spin transfer switched magnetic tunnel junctions
Journal of Applied Physics, 2005Co-Authors: M. Pakala, Y. Huai, T. Valet, Yunfei Ding, Z. DiaoAbstract:The spin transfer switching Current Distribution within a cell was studied in magnetic-tunnel-junction-based structures having alumina barriers with a resistance-area product (RA) of 10–30Ωμm2 and a tunneling magnetoresistance of ∼20%. These were patterned into Current perpendicular to plane configured nanopillars having elliptical cross sections of area ∼0.02μm2. The width of the critical Current Distribution (sigma∕average of Distribution), measured using 30‐ms Current pulse width, was found to be 7.5% and 3.5% for cells with thermal factor (KuV∕kBT) of 40 and 65, respectively. The Distribution width did not change significantly for pulse widths between 1s and 4ms. An analytical expression for probability density function, p(I∕Ic0) was derived considering the thermally activated spin transfer model, which supports the experimental observation that the thermal factor is the most significant parameter in determining the within-cell critical Current Distribution width.The spin transfer switching Current Distribution within a cell was studied in magnetic-tunnel-junction-based structures having alumina barriers with a resistance-area product (RA) of 10–30Ωμm2 and a tunneling magnetoresistance of ∼20%. These were patterned into Current perpendicular to plane configured nanopillars having elliptical cross sections of area ∼0.02μm2. The width of the critical Current Distribution (sigma∕average of Distribution), measured using 30‐ms Current pulse width, was found to be 7.5% and 3.5% for cells with thermal factor (KuV∕kBT) of 40 and 65, respectively. The Distribution width did not change significantly for pulse widths between 1s and 4ms. An analytical expression for probability density function, p(I∕Ic0) was derived considering the thermally activated spin transfer model, which supports the experimental observation that the thermal factor is the most significant parameter in determining the within-cell critical Current Distribution width.
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Critical Current Distribution in spin transfer switched magnetic tunneling junctions
2005 IEEE International Magnetics Conference (INTERMAG), 2005Co-Authors: M. Pakala, Y. Huai, T. Valet, Z. DiaoAbstract:In this paper, the switching Current Distribution data within a cell is presented. Current switching in the magnetic tunneling junctions (MTJ) is measured in DC pulse mode with pulse widths between 3 ms to 1 s for 25 times or more for each cell. RA of the films is in 10 to 20 /spl Omega/-/spl mu/m/sup 2/ range and TMR values between 18 to 30% are obtained using alumina barrier. It is seen, both from the Distribution data as well as by evaluating the analytical expression derived for critical Current Distribution, that the thermal factor is the most important parameter determining the Current Distribution within a cell.
M. Pakala - One of the best experts on this subject based on the ideXlab platform.
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critical Current Distribution in spin transfer switched magnetic tunnel junctions
Journal of Applied Physics, 2005Co-Authors: M. Pakala, Y. Huai, T. Valet, Yunfei Ding, Z. DiaoAbstract:The spin transfer switching Current Distribution within a cell was studied in magnetic-tunnel-junction-based structures having alumina barriers with a resistance-area product (RA) of 10–30Ωμm2 and a tunneling magnetoresistance of ∼20%. These were patterned into Current perpendicular to plane configured nanopillars having elliptical cross sections of area ∼0.02μm2. The width of the critical Current Distribution (sigma∕average of Distribution), measured using 30‐ms Current pulse width, was found to be 7.5% and 3.5% for cells with thermal factor (KuV∕kBT) of 40 and 65, respectively. The Distribution width did not change significantly for pulse widths between 1s and 4ms. An analytical expression for probability density function, p(I∕Ic0) was derived considering the thermally activated spin transfer model, which supports the experimental observation that the thermal factor is the most significant parameter in determining the within-cell critical Current Distribution width.The spin transfer switching Current Distribution within a cell was studied in magnetic-tunnel-junction-based structures having alumina barriers with a resistance-area product (RA) of 10–30Ωμm2 and a tunneling magnetoresistance of ∼20%. These were patterned into Current perpendicular to plane configured nanopillars having elliptical cross sections of area ∼0.02μm2. The width of the critical Current Distribution (sigma∕average of Distribution), measured using 30‐ms Current pulse width, was found to be 7.5% and 3.5% for cells with thermal factor (KuV∕kBT) of 40 and 65, respectively. The Distribution width did not change significantly for pulse widths between 1s and 4ms. An analytical expression for probability density function, p(I∕Ic0) was derived considering the thermally activated spin transfer model, which supports the experimental observation that the thermal factor is the most significant parameter in determining the within-cell critical Current Distribution width.
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Critical Current Distribution in spin transfer switched magnetic tunneling junctions
2005 IEEE International Magnetics Conference (INTERMAG), 2005Co-Authors: M. Pakala, Y. Huai, T. Valet, Z. DiaoAbstract:In this paper, the switching Current Distribution data within a cell is presented. Current switching in the magnetic tunneling junctions (MTJ) is measured in DC pulse mode with pulse widths between 3 ms to 1 s for 25 times or more for each cell. RA of the films is in 10 to 20 /spl Omega/-/spl mu/m/sup 2/ range and TMR values between 18 to 30% are obtained using alumina barrier. It is seen, both from the Distribution data as well as by evaluating the analytical expression derived for critical Current Distribution, that the thermal factor is the most important parameter determining the Current Distribution within a cell.
T. Valet - One of the best experts on this subject based on the ideXlab platform.
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critical Current Distribution in spin transfer switched magnetic tunnel junctions
Journal of Applied Physics, 2005Co-Authors: M. Pakala, Y. Huai, T. Valet, Yunfei Ding, Z. DiaoAbstract:The spin transfer switching Current Distribution within a cell was studied in magnetic-tunnel-junction-based structures having alumina barriers with a resistance-area product (RA) of 10–30Ωμm2 and a tunneling magnetoresistance of ∼20%. These were patterned into Current perpendicular to plane configured nanopillars having elliptical cross sections of area ∼0.02μm2. The width of the critical Current Distribution (sigma∕average of Distribution), measured using 30‐ms Current pulse width, was found to be 7.5% and 3.5% for cells with thermal factor (KuV∕kBT) of 40 and 65, respectively. The Distribution width did not change significantly for pulse widths between 1s and 4ms. An analytical expression for probability density function, p(I∕Ic0) was derived considering the thermally activated spin transfer model, which supports the experimental observation that the thermal factor is the most significant parameter in determining the within-cell critical Current Distribution width.The spin transfer switching Current Distribution within a cell was studied in magnetic-tunnel-junction-based structures having alumina barriers with a resistance-area product (RA) of 10–30Ωμm2 and a tunneling magnetoresistance of ∼20%. These were patterned into Current perpendicular to plane configured nanopillars having elliptical cross sections of area ∼0.02μm2. The width of the critical Current Distribution (sigma∕average of Distribution), measured using 30‐ms Current pulse width, was found to be 7.5% and 3.5% for cells with thermal factor (KuV∕kBT) of 40 and 65, respectively. The Distribution width did not change significantly for pulse widths between 1s and 4ms. An analytical expression for probability density function, p(I∕Ic0) was derived considering the thermally activated spin transfer model, which supports the experimental observation that the thermal factor is the most significant parameter in determining the within-cell critical Current Distribution width.
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Critical Current Distribution in spin transfer switched magnetic tunneling junctions
2005 IEEE International Magnetics Conference (INTERMAG), 2005Co-Authors: M. Pakala, Y. Huai, T. Valet, Z. DiaoAbstract:In this paper, the switching Current Distribution data within a cell is presented. Current switching in the magnetic tunneling junctions (MTJ) is measured in DC pulse mode with pulse widths between 3 ms to 1 s for 25 times or more for each cell. RA of the films is in 10 to 20 /spl Omega/-/spl mu/m/sup 2/ range and TMR values between 18 to 30% are obtained using alumina barrier. It is seen, both from the Distribution data as well as by evaluating the analytical expression derived for critical Current Distribution, that the thermal factor is the most important parameter determining the Current Distribution within a cell.
Y. Huai - One of the best experts on this subject based on the ideXlab platform.
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critical Current Distribution in spin transfer switched magnetic tunnel junctions
Journal of Applied Physics, 2005Co-Authors: M. Pakala, Y. Huai, T. Valet, Yunfei Ding, Z. DiaoAbstract:The spin transfer switching Current Distribution within a cell was studied in magnetic-tunnel-junction-based structures having alumina barriers with a resistance-area product (RA) of 10–30Ωμm2 and a tunneling magnetoresistance of ∼20%. These were patterned into Current perpendicular to plane configured nanopillars having elliptical cross sections of area ∼0.02μm2. The width of the critical Current Distribution (sigma∕average of Distribution), measured using 30‐ms Current pulse width, was found to be 7.5% and 3.5% for cells with thermal factor (KuV∕kBT) of 40 and 65, respectively. The Distribution width did not change significantly for pulse widths between 1s and 4ms. An analytical expression for probability density function, p(I∕Ic0) was derived considering the thermally activated spin transfer model, which supports the experimental observation that the thermal factor is the most significant parameter in determining the within-cell critical Current Distribution width.The spin transfer switching Current Distribution within a cell was studied in magnetic-tunnel-junction-based structures having alumina barriers with a resistance-area product (RA) of 10–30Ωμm2 and a tunneling magnetoresistance of ∼20%. These were patterned into Current perpendicular to plane configured nanopillars having elliptical cross sections of area ∼0.02μm2. The width of the critical Current Distribution (sigma∕average of Distribution), measured using 30‐ms Current pulse width, was found to be 7.5% and 3.5% for cells with thermal factor (KuV∕kBT) of 40 and 65, respectively. The Distribution width did not change significantly for pulse widths between 1s and 4ms. An analytical expression for probability density function, p(I∕Ic0) was derived considering the thermally activated spin transfer model, which supports the experimental observation that the thermal factor is the most significant parameter in determining the within-cell critical Current Distribution width.
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Critical Current Distribution in spin transfer switched magnetic tunneling junctions
2005 IEEE International Magnetics Conference (INTERMAG), 2005Co-Authors: M. Pakala, Y. Huai, T. Valet, Z. DiaoAbstract:In this paper, the switching Current Distribution data within a cell is presented. Current switching in the magnetic tunneling junctions (MTJ) is measured in DC pulse mode with pulse widths between 3 ms to 1 s for 25 times or more for each cell. RA of the films is in 10 to 20 /spl Omega/-/spl mu/m/sup 2/ range and TMR values between 18 to 30% are obtained using alumina barrier. It is seen, both from the Distribution data as well as by evaluating the analytical expression derived for critical Current Distribution, that the thermal factor is the most important parameter determining the Current Distribution within a cell.
Yaping Du - One of the best experts on this subject based on the ideXlab platform.
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Current Distribution in Parallel Single-Core Cables on Metal Tray
2007 IEEE Industry Applications Annual Meeting, 2020Co-Authors: Yaping Du, Y. Z. HuanAbstract:Parallel single-core (single-conductor) cables are employed in the backbone of building Distribution systems. As power consumption in buildings grows continuously, overheating problems associated with such a cable installation have become a concern. This paper investigates the Current Distribution among parallel single-core cables installed on metal tray in a multi-phase Distribution system. A general prediction method of Current Distribution is introduced, and is validated experimentally. To analyze Current Distribution under different cable arrangements, empirical formulas of cable impedance are presented. The Current Distribution associated with the local practice of parallel cable installations is evaluated and recommendations for the design and installation are presented.Department of Building Services EngineeringRefereed conference pape
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Current Distribution in Parallel Single-Core Cables on Metal Tray
IEEE Transactions on Industry Applications, 2007Co-Authors: Yaping Du, Y.z. Yuan, X.h. WangAbstract:Parallel single-core (single-conductor) cables are employed in the backbone of building Distribution systems. As power consumption in buildings grows continuously, overheating problems associated with such a cable installation have become a concern. This paper investigates the Current Distribution among parallel single-core cables installed on metal tray in a multiphase Distribution system. A general prediction method of Current Distribution is introduced and is validated experimentally. To analyze the Current Distribution under different cable arrangements, empirical formulas of cable impedance are presented. The Current Distribution associated with the local practice of parallel cable installations is evaluated, and recommendations for the design and installation are presented.
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Current Distribution in single-core cables connected in parallel
IEE Proceedings - Generation Transmission and Distribution, 2001Co-Authors: Yaping Du, John BurnettAbstract:In Hong Kong buildings, large, parallel-connected single-core cables are often used to connect transformers to main low-voltage switchboards. As power consumption in buildings increases, overheating problems associated with such cable installations have become a concern. The paper investigates Current Distribution among parallel-connected single-core cables in a multi-phase Distribution system. A general Current-Distribution prediction method is proposed and validated experimentally. The impact of cable, source and installation parameters, as well as the presence of a steel cable tray, is reported. The Current Distribution associated with the Hong Kong practice of parallel cable installations is evaluated, and recommendations for the design and installation are presented.
