The Experts below are selected from a list of 16761 Experts worldwide ranked by ideXlab platform
G.j.f. Legge - One of the best experts on this subject based on the ideXlab platform.
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Scanning ion deep level Transient Spectroscopy: I. Theory
Journal of Physics D: Applied Physics, 2006Co-Authors: Jamie Stuart Laird, Chennupati Jagadish, David N. Jamieson, G.j.f. LeggeAbstract:Theoretical aspects of a new technique for the MeV ion microbeam are described in detail for the first time. The basis of the technique, termed scanning ion deep level Transient Spectroscopy (SIDLTS), is the imaging of defect distributions within semiconductor devices. The principles of SIDLTS are similar to those behind other deep level Transient Spectroscopy (DLTS) techniques with the main difference stemming from the injection of carriers into traps using the localized energy-loss of a focused MeV ion beam. Energy-loss of an MeV ion generates an electron-hole pair plasma, providing the equivalent of a DLTS trap filling pulse with a duration which depends on space-charge screening of the applied electric field and ambipolar erosion of the plasma for short ranging ions. Some nanoseconds later, the detrapping current Transient is monitored as a charge Transient. Scanning the beam in conjunction with Transient analysis allows the imaging of defect levels. As with DLTS, the temperature dependence of the Transient can be used to extract trap activation levels. In this, the first of a two-part paper, we introduce the various stages of corner capture and derive a simple expression for the observed charge Transient. The second paper will illustrate the technique on a MeV ion implanted Au–Si Schottky junction.
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Scanning ion deep level Transient Spectroscopy
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 1999Co-Authors: Jamie Stuart Laird, R.a. Bardos, Chennupati Jagadish, David N. Jamieson, G.j.f. LeggeAbstract:Abstract We describe a new spectroscopic technique on the MeV ion microprobe, which allows the mapping of electrically active defects within a semiconductor. The technique known here as Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is analogous to the bulk technique Deep Level Transient Spectroscopy (DLTS). In SIDLTS, the electron–hole (e-h) plasma induced by the MeV ion provides the trap-filling pulse. A simple theoretical framework for sensitivity is discussed as is the system developed to achieve it. A comparison of DLTS and SIDLTS on an implanted Au–Si Schottky barrier is made, including quantitative estimations of the trap activation energies and sensitivity.
M Kaniewska - One of the best experts on this subject based on the ideXlab platform.
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Deep Level Transient Spectroscopy in Quantum Dot Characterization
Nanoscale Research Letters, 2008Co-Authors: O Engström, M KaniewskaAbstract:Deep level Transient Spectroscopy (DLTS) for investigating electronic properties of self-assembled InAs/GaAs quantum dots (QDs) is described in an approach, where experimental and theoretical DLTS data are compared in a temperature-voltage representation. From such comparative studies, the main mechanisms of electron escape from QD-related levels in tunneling and more complex thermal processes are discovered. Measurement conditions for proper characterization of the levels by identifying thermal and tunneling processes are discussed in terms of the complexity resulting from the features of self-assembled QDs and multiple paths for electron escape.
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Electron tunneling from quantum dots characterized by deep level Transient Spectroscopy
Applied Physics Letters, 2007Co-Authors: O Engström, M Kaniewska, M Kaczmarczyk, W. JungAbstract:Electron tunneling from InAs∕GaAs quantum dots has been studied by deep level Transient Spectroscopy (DLTS). Comparing DLTS data with theory, we demonstrate how the results can be interpreted for situations where the emission mechanism is pure tunneling. An illusory anomalous tunneling dependence on electric field is resolved by taking into account the energy level distribution originating from size fluctuations in the quantum dot ensemble.
O Engström - One of the best experts on this subject based on the ideXlab platform.
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Deep Level Transient Spectroscopy in Quantum Dot Characterization
Nanoscale Research Letters, 2008Co-Authors: O Engström, M KaniewskaAbstract:Deep level Transient Spectroscopy (DLTS) for investigating electronic properties of self-assembled InAs/GaAs quantum dots (QDs) is described in an approach, where experimental and theoretical DLTS data are compared in a temperature-voltage representation. From such comparative studies, the main mechanisms of electron escape from QD-related levels in tunneling and more complex thermal processes are discovered. Measurement conditions for proper characterization of the levels by identifying thermal and tunneling processes are discussed in terms of the complexity resulting from the features of self-assembled QDs and multiple paths for electron escape.
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Electron tunneling from quantum dots characterized by deep level Transient Spectroscopy
Applied Physics Letters, 2007Co-Authors: O Engström, M Kaniewska, M Kaczmarczyk, W. JungAbstract:Electron tunneling from InAs∕GaAs quantum dots has been studied by deep level Transient Spectroscopy (DLTS). Comparing DLTS data with theory, we demonstrate how the results can be interpreted for situations where the emission mechanism is pure tunneling. An illusory anomalous tunneling dependence on electric field is resolved by taking into account the energy level distribution originating from size fluctuations in the quantum dot ensemble.
Daniel Mathiot - One of the best experts on this subject based on the ideXlab platform.
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Deep‐level Transient Spectroscopy characterization of silicon‐silicon interfaces
Journal of Applied Physics, 1991Co-Authors: D. Stievenard, X. Wallart, Daniel MathiotAbstract:Using the capacitance‐voltage technique and mainly deep‐level Transient Spectroscopy (DLTS), we studied silicon‐silicon epitaxial layer structures grown by the limited reaction process using silane diluted in hydrogen. We develop a simple but original model to interpret the DLTS data. The use of the two techniques allows the determination of the physical parameters of the structure, i.e., the doping level, the thickness of the layers, and the density and capture cross section of the states localized at the different interfaces of the structure.
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DEEP LEVEL Transient Spectroscopy CHARACTERIZATION OF TUNGSTEN-RELATED DEEP LEVELS IN SILICON
Journal of Applied Physics, 1991Co-Authors: S. Boughaba, Daniel MathiotAbstract:Deep level Transient Spectroscopy is used to determine the deep levels introduced by tungsten in the silicon band gap. The experimental results indicate that tungsten creates three defect centers, with levels at Ev+0.22 eV, Ev+0.33 eV, and Ec−0.59 eV. The shape of the concentration profiles indicates that W does not diffuse by a simple mechanism in Si.
Jamie Stuart Laird - One of the best experts on this subject based on the ideXlab platform.
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Scanning ion deep level Transient Spectroscopy: I. Theory
Journal of Physics D: Applied Physics, 2006Co-Authors: Jamie Stuart Laird, Chennupati Jagadish, David N. Jamieson, G.j.f. LeggeAbstract:Theoretical aspects of a new technique for the MeV ion microbeam are described in detail for the first time. The basis of the technique, termed scanning ion deep level Transient Spectroscopy (SIDLTS), is the imaging of defect distributions within semiconductor devices. The principles of SIDLTS are similar to those behind other deep level Transient Spectroscopy (DLTS) techniques with the main difference stemming from the injection of carriers into traps using the localized energy-loss of a focused MeV ion beam. Energy-loss of an MeV ion generates an electron-hole pair plasma, providing the equivalent of a DLTS trap filling pulse with a duration which depends on space-charge screening of the applied electric field and ambipolar erosion of the plasma for short ranging ions. Some nanoseconds later, the detrapping current Transient is monitored as a charge Transient. Scanning the beam in conjunction with Transient analysis allows the imaging of defect levels. As with DLTS, the temperature dependence of the Transient can be used to extract trap activation levels. In this, the first of a two-part paper, we introduce the various stages of corner capture and derive a simple expression for the observed charge Transient. The second paper will illustrate the technique on a MeV ion implanted Au–Si Schottky junction.
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Scanning ion deep level Transient Spectroscopy
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 1999Co-Authors: Jamie Stuart Laird, R.a. Bardos, Chennupati Jagadish, David N. Jamieson, G.j.f. LeggeAbstract:Abstract We describe a new spectroscopic technique on the MeV ion microprobe, which allows the mapping of electrically active defects within a semiconductor. The technique known here as Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is analogous to the bulk technique Deep Level Transient Spectroscopy (DLTS). In SIDLTS, the electron–hole (e-h) plasma induced by the MeV ion provides the trap-filling pulse. A simple theoretical framework for sensitivity is discussed as is the system developed to achieve it. A comparison of DLTS and SIDLTS on an implanted Au–Si Schottky barrier is made, including quantitative estimations of the trap activation energies and sensitivity.
