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Dietrich W Vook - One of the best experts on this subject based on the ideXlab platform.

  • Density Gradient analysis of mos tunneling
    IEEE Transactions on Electron Devices, 2000
    Co-Authors: Mario G. Ancona, R W Dutton, P Vande J Voorde, M Cao, Dietrich W Vook
    Abstract:

    The Density-Gradient description of quantum transport is applied to the analysis of tunneling phenomena in ultrathin (<25 /spl Aring/) oxide MOS capacitors. Both electron and hole tunneling are included in the one-dimensional (1-D) analysis and two new refinements to Density-Gradient theory are introduced, one relating to the treatment of Shockley-Read-Hall recombination and the other a modification of the tunneling boundary conditions to account for the semiconductor bandgap. Detailed comparisons are made with experimental current-voltage (I-V) data for samples with both n/sup +/ and p/sup +/ polysilicon gates and all of the features of the data are found to be understandable within the Density-Gradient framework. Besides providing new understanding of these experiments, these results show that the Density-Gradient approach can be of great value for engineering-oriented device analysis in quantum regimes.

  • Density-Gradient analysis of MOS tunneling
    IEEE Transactions on Electron Devices, 2000
    Co-Authors: Mario G. Ancona, R W Dutton, P Vande J Voorde, M Cao, Dietrich W Vook
    Abstract:

    The Density-Gradient description of quantum transport is applied to the analysis of tunneling phenomena in ultrathin (

Mario G. Ancona - One of the best experts on this subject based on the ideXlab platform.

  • Density Gradient analysis of mos tunneling
    IEEE Transactions on Electron Devices, 2000
    Co-Authors: Mario G. Ancona, R W Dutton, P Vande J Voorde, M Cao, Dietrich W Vook
    Abstract:

    The Density-Gradient description of quantum transport is applied to the analysis of tunneling phenomena in ultrathin (<25 /spl Aring/) oxide MOS capacitors. Both electron and hole tunneling are included in the one-dimensional (1-D) analysis and two new refinements to Density-Gradient theory are introduced, one relating to the treatment of Shockley-Read-Hall recombination and the other a modification of the tunneling boundary conditions to account for the semiconductor bandgap. Detailed comparisons are made with experimental current-voltage (I-V) data for samples with both n/sup +/ and p/sup +/ polysilicon gates and all of the features of the data are found to be understandable within the Density-Gradient framework. Besides providing new understanding of these experiments, these results show that the Density-Gradient approach can be of great value for engineering-oriented device analysis in quantum regimes.

  • Nonlinear discretization scheme for the Density-Gradient equations
    2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502), 2000
    Co-Authors: Mario G. Ancona, B.a. Biegel
    Abstract:

    Density-Gradient theory enables engineering-oriented analyses of electronic devices in which quantum confinement and tunneling phenomena are significant (Ancona and Tiersten, 1987; Ancona, 1990; Ancona et al, 1999). A nonlinear three-point discretization of the Density-Gradient equations is presented. The new method, an exponential-fitting scheme, is evaluated using numerical examples involving both quantum confinement and tunneling. The nonlinear discretization is shown to perform far better than the conventional linear version allowing for a substantial easing in the mesh refinement, especially in tunneling problems.

  • Density-Gradient analysis of MOS tunneling
    IEEE Transactions on Electron Devices, 2000
    Co-Authors: Mario G. Ancona, R W Dutton, P Vande J Voorde, M Cao, Dietrich W Vook
    Abstract:

    The Density-Gradient description of quantum transport is applied to the analysis of tunneling phenomena in ultrathin (

R W Dutton - One of the best experts on this subject based on the ideXlab platform.

  • Density Gradient analysis of mos tunneling
    IEEE Transactions on Electron Devices, 2000
    Co-Authors: Mario G. Ancona, R W Dutton, P Vande J Voorde, M Cao, Dietrich W Vook
    Abstract:

    The Density-Gradient description of quantum transport is applied to the analysis of tunneling phenomena in ultrathin (<25 /spl Aring/) oxide MOS capacitors. Both electron and hole tunneling are included in the one-dimensional (1-D) analysis and two new refinements to Density-Gradient theory are introduced, one relating to the treatment of Shockley-Read-Hall recombination and the other a modification of the tunneling boundary conditions to account for the semiconductor bandgap. Detailed comparisons are made with experimental current-voltage (I-V) data for samples with both n/sup +/ and p/sup +/ polysilicon gates and all of the features of the data are found to be understandable within the Density-Gradient framework. Besides providing new understanding of these experiments, these results show that the Density-Gradient approach can be of great value for engineering-oriented device analysis in quantum regimes.

  • Density-Gradient analysis of MOS tunneling
    IEEE Transactions on Electron Devices, 2000
    Co-Authors: Mario G. Ancona, R W Dutton, P Vande J Voorde, M Cao, Dietrich W Vook
    Abstract:

    The Density-Gradient description of quantum transport is applied to the analysis of tunneling phenomena in ultrathin (

P Vande J Voorde - One of the best experts on this subject based on the ideXlab platform.

  • Density Gradient analysis of mos tunneling
    IEEE Transactions on Electron Devices, 2000
    Co-Authors: Mario G. Ancona, R W Dutton, P Vande J Voorde, M Cao, Dietrich W Vook
    Abstract:

    The Density-Gradient description of quantum transport is applied to the analysis of tunneling phenomena in ultrathin (<25 /spl Aring/) oxide MOS capacitors. Both electron and hole tunneling are included in the one-dimensional (1-D) analysis and two new refinements to Density-Gradient theory are introduced, one relating to the treatment of Shockley-Read-Hall recombination and the other a modification of the tunneling boundary conditions to account for the semiconductor bandgap. Detailed comparisons are made with experimental current-voltage (I-V) data for samples with both n/sup +/ and p/sup +/ polysilicon gates and all of the features of the data are found to be understandable within the Density-Gradient framework. Besides providing new understanding of these experiments, these results show that the Density-Gradient approach can be of great value for engineering-oriented device analysis in quantum regimes.

  • Density-Gradient analysis of MOS tunneling
    IEEE Transactions on Electron Devices, 2000
    Co-Authors: Mario G. Ancona, R W Dutton, P Vande J Voorde, M Cao, Dietrich W Vook
    Abstract:

    The Density-Gradient description of quantum transport is applied to the analysis of tunneling phenomena in ultrathin (

M Cao - One of the best experts on this subject based on the ideXlab platform.

  • Density Gradient analysis of mos tunneling
    IEEE Transactions on Electron Devices, 2000
    Co-Authors: Mario G. Ancona, R W Dutton, P Vande J Voorde, M Cao, Dietrich W Vook
    Abstract:

    The Density-Gradient description of quantum transport is applied to the analysis of tunneling phenomena in ultrathin (<25 /spl Aring/) oxide MOS capacitors. Both electron and hole tunneling are included in the one-dimensional (1-D) analysis and two new refinements to Density-Gradient theory are introduced, one relating to the treatment of Shockley-Read-Hall recombination and the other a modification of the tunneling boundary conditions to account for the semiconductor bandgap. Detailed comparisons are made with experimental current-voltage (I-V) data for samples with both n/sup +/ and p/sup +/ polysilicon gates and all of the features of the data are found to be understandable within the Density-Gradient framework. Besides providing new understanding of these experiments, these results show that the Density-Gradient approach can be of great value for engineering-oriented device analysis in quantum regimes.

  • Density-Gradient analysis of MOS tunneling
    IEEE Transactions on Electron Devices, 2000
    Co-Authors: Mario G. Ancona, R W Dutton, P Vande J Voorde, M Cao, Dietrich W Vook
    Abstract:

    The Density-Gradient description of quantum transport is applied to the analysis of tunneling phenomena in ultrathin (