The Experts below are selected from a list of 303 Experts worldwide ranked by ideXlab platform
H Philip S Wong - One of the best experts on this subject based on the ideXlab platform.
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microsecond transient thermal behavior of hfox based resistive random access memory using a micro thermal stage mts
International Electron Devices Meeting, 2016Co-Authors: Zizhen Jiang, Ziwen Wang, Xin Zheng, Scott W Fong, Hongyu Chen, Yoshio Nishi, H Philip S WongAbstract:Microsecond transient thermal disturbance (TD) on the conduction and switching of HfOX-based resistive random access memory (RRAM) is investigated using a micro thermal stage (MTS). Temperature-Dependent Measurement (298–1134 K) induced from MTS is applied to the RRAM during forming, read, write, and reliability Measurements for DC and AC conditions. The temperature of the conductive filament (CF) that was inferred from ex-situ TEM observation of the crystallization is > 850 K in [1]. In this work, the time scale of the temperature-Dependent Measurement is extended from DC down to ∼ 10 μs. The contributions of various mechanisms (drift, Soret and Fick diffusion) of the oxygen ion migration are analyzed using MTS-induced heating. Electric field assisted oxygen ion migration is shown to be the dominant switching mechanism for fast AC switching (pulse width 100 ns with the ambient temperature 298–1047 K). During the fast SET and RESET process (100 ns) at 300–600 K, Soret diffusion (due to the temperature gradient) is stronger and enlarges CF while Fick diffusion (due to the concentration gradient) is not noticeable. Above 400–600 K, Fick force overrides Soret force, driving the resistance to a higher value. A compact model is developed to capture the physics, and TD on the array performance is estimated. In the middle layer (16th) of a 3D array (64 × 64 × 32), 20 % of the cells will be programmed with a resistance shift due to local temperature rise, and as a result 2.2% write failure may occur due to the TD caused by the previous programming cycle.
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resistance and threshold switching voltage drift behavior in phase change memory and their temperature dependence at microsecond time scales studied using a micro thermal stage
IEEE Transactions on Electron Devices, 2011Co-Authors: Mehdi Asheghi, Fred Hurkx, John P Reifenberg, Kenneth E Goodson, H Philip S WongAbstract:We study the drift behavior of RESET resistance RRESET and threshold switching voltage Vth in phase-change memory (PCM) and their temperature dependence. To extend the temperature-Dependent Measurement to microsecond time scales, we integrate an innovative micro-thermal stage (MTS) on the PCM cell. The MTS changes the temperature of the programmed region of the PCM cell within a few microseconds by placing the Pt heater in close proximity of the programmed region. First, we experimentally verify the existing phenomenological RRESET and Vth drift model for constant annealing temperature at various temperatures between 25°C and 185°C down to 100 μs and show that the measured temperature dependence of the drift coefficient agrees well with what is expected from the existing drift models. Based on the existing drift model for a constant annealing temperature, we derive the analytical expression for the RRESET drift for time-varying annealing temperature and experimentally verify the analytical expression. The derived analytical expression is important to understand the impact of thermal disturbance on PCM reliability such as variations in RRESET and Vth.
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resistance and threshold switching voltage drift behavior in phase change memory and their temperature dependence at microsecond time scales studied using a micro thermal stage
IEEE Transactions on Electron Devices, 2011Co-Authors: Sangbum Kim, Mehdi Asheghi, Fred Hurkx, John P Reifenberg, Kenneth E Goodson, Byoungil Lee, H Philip S WongAbstract:We study the drift behavior of RESET resistance RRESET and threshold switching voltage Vth in phase-change memory (PCM) and their temperature dependence. To extend the temperature-Dependent Measurement to microsecond time scales, we integrate an innovative micro-thermal stage (MTS) on the PCM cell. The MTS changes the temperature of the programmed region of the PCM cell within a few microseconds by placing the Pt heater in close proximity of the programmed region. First, we experimentally verify the existing phenomenological RRESET and Vth drift model for constant annealing temperature at various temperatures between 25°C and 185°C down to 100 μs and show that the measured temperature dependence of the drift coefficient agrees well with what is expected from the existing drift models. Based on the existing drift model for a constant annealing temperature, we derive the analytical expression for the RRESET drift for time-varying annealing temperature and experimentally verify the analytical expression. The derived analytical expression is important to understand the impact of thermal disturbance on PCM reliability such as variations in RRESET and Vth.
Mehdi Asheghi - One of the best experts on this subject based on the ideXlab platform.
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resistance and threshold switching voltage drift behavior in phase change memory and their temperature dependence at microsecond time scales studied using a micro thermal stage
IEEE Transactions on Electron Devices, 2011Co-Authors: Mehdi Asheghi, Fred Hurkx, John P Reifenberg, Kenneth E Goodson, H Philip S WongAbstract:We study the drift behavior of RESET resistance RRESET and threshold switching voltage Vth in phase-change memory (PCM) and their temperature dependence. To extend the temperature-Dependent Measurement to microsecond time scales, we integrate an innovative micro-thermal stage (MTS) on the PCM cell. The MTS changes the temperature of the programmed region of the PCM cell within a few microseconds by placing the Pt heater in close proximity of the programmed region. First, we experimentally verify the existing phenomenological RRESET and Vth drift model for constant annealing temperature at various temperatures between 25°C and 185°C down to 100 μs and show that the measured temperature dependence of the drift coefficient agrees well with what is expected from the existing drift models. Based on the existing drift model for a constant annealing temperature, we derive the analytical expression for the RRESET drift for time-varying annealing temperature and experimentally verify the analytical expression. The derived analytical expression is important to understand the impact of thermal disturbance on PCM reliability such as variations in RRESET and Vth.
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resistance and threshold switching voltage drift behavior in phase change memory and their temperature dependence at microsecond time scales studied using a micro thermal stage
IEEE Transactions on Electron Devices, 2011Co-Authors: Sangbum Kim, Mehdi Asheghi, Fred Hurkx, John P Reifenberg, Kenneth E Goodson, Byoungil Lee, H Philip S WongAbstract:We study the drift behavior of RESET resistance RRESET and threshold switching voltage Vth in phase-change memory (PCM) and their temperature dependence. To extend the temperature-Dependent Measurement to microsecond time scales, we integrate an innovative micro-thermal stage (MTS) on the PCM cell. The MTS changes the temperature of the programmed region of the PCM cell within a few microseconds by placing the Pt heater in close proximity of the programmed region. First, we experimentally verify the existing phenomenological RRESET and Vth drift model for constant annealing temperature at various temperatures between 25°C and 185°C down to 100 μs and show that the measured temperature dependence of the drift coefficient agrees well with what is expected from the existing drift models. Based on the existing drift model for a constant annealing temperature, we derive the analytical expression for the RRESET drift for time-varying annealing temperature and experimentally verify the analytical expression. The derived analytical expression is important to understand the impact of thermal disturbance on PCM reliability such as variations in RRESET and Vth.
Fred Hurkx - One of the best experts on this subject based on the ideXlab platform.
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resistance and threshold switching voltage drift behavior in phase change memory and their temperature dependence at microsecond time scales studied using a micro thermal stage
IEEE Transactions on Electron Devices, 2011Co-Authors: Mehdi Asheghi, Fred Hurkx, John P Reifenberg, Kenneth E Goodson, H Philip S WongAbstract:We study the drift behavior of RESET resistance RRESET and threshold switching voltage Vth in phase-change memory (PCM) and their temperature dependence. To extend the temperature-Dependent Measurement to microsecond time scales, we integrate an innovative micro-thermal stage (MTS) on the PCM cell. The MTS changes the temperature of the programmed region of the PCM cell within a few microseconds by placing the Pt heater in close proximity of the programmed region. First, we experimentally verify the existing phenomenological RRESET and Vth drift model for constant annealing temperature at various temperatures between 25°C and 185°C down to 100 μs and show that the measured temperature dependence of the drift coefficient agrees well with what is expected from the existing drift models. Based on the existing drift model for a constant annealing temperature, we derive the analytical expression for the RRESET drift for time-varying annealing temperature and experimentally verify the analytical expression. The derived analytical expression is important to understand the impact of thermal disturbance on PCM reliability such as variations in RRESET and Vth.
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resistance and threshold switching voltage drift behavior in phase change memory and their temperature dependence at microsecond time scales studied using a micro thermal stage
IEEE Transactions on Electron Devices, 2011Co-Authors: Sangbum Kim, Mehdi Asheghi, Fred Hurkx, John P Reifenberg, Kenneth E Goodson, Byoungil Lee, H Philip S WongAbstract:We study the drift behavior of RESET resistance RRESET and threshold switching voltage Vth in phase-change memory (PCM) and their temperature dependence. To extend the temperature-Dependent Measurement to microsecond time scales, we integrate an innovative micro-thermal stage (MTS) on the PCM cell. The MTS changes the temperature of the programmed region of the PCM cell within a few microseconds by placing the Pt heater in close proximity of the programmed region. First, we experimentally verify the existing phenomenological RRESET and Vth drift model for constant annealing temperature at various temperatures between 25°C and 185°C down to 100 μs and show that the measured temperature dependence of the drift coefficient agrees well with what is expected from the existing drift models. Based on the existing drift model for a constant annealing temperature, we derive the analytical expression for the RRESET drift for time-varying annealing temperature and experimentally verify the analytical expression. The derived analytical expression is important to understand the impact of thermal disturbance on PCM reliability such as variations in RRESET and Vth.
John P Reifenberg - One of the best experts on this subject based on the ideXlab platform.
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resistance and threshold switching voltage drift behavior in phase change memory and their temperature dependence at microsecond time scales studied using a micro thermal stage
IEEE Transactions on Electron Devices, 2011Co-Authors: Mehdi Asheghi, Fred Hurkx, John P Reifenberg, Kenneth E Goodson, H Philip S WongAbstract:We study the drift behavior of RESET resistance RRESET and threshold switching voltage Vth in phase-change memory (PCM) and their temperature dependence. To extend the temperature-Dependent Measurement to microsecond time scales, we integrate an innovative micro-thermal stage (MTS) on the PCM cell. The MTS changes the temperature of the programmed region of the PCM cell within a few microseconds by placing the Pt heater in close proximity of the programmed region. First, we experimentally verify the existing phenomenological RRESET and Vth drift model for constant annealing temperature at various temperatures between 25°C and 185°C down to 100 μs and show that the measured temperature dependence of the drift coefficient agrees well with what is expected from the existing drift models. Based on the existing drift model for a constant annealing temperature, we derive the analytical expression for the RRESET drift for time-varying annealing temperature and experimentally verify the analytical expression. The derived analytical expression is important to understand the impact of thermal disturbance on PCM reliability such as variations in RRESET and Vth.
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resistance and threshold switching voltage drift behavior in phase change memory and their temperature dependence at microsecond time scales studied using a micro thermal stage
IEEE Transactions on Electron Devices, 2011Co-Authors: Sangbum Kim, Mehdi Asheghi, Fred Hurkx, John P Reifenberg, Kenneth E Goodson, Byoungil Lee, H Philip S WongAbstract:We study the drift behavior of RESET resistance RRESET and threshold switching voltage Vth in phase-change memory (PCM) and their temperature dependence. To extend the temperature-Dependent Measurement to microsecond time scales, we integrate an innovative micro-thermal stage (MTS) on the PCM cell. The MTS changes the temperature of the programmed region of the PCM cell within a few microseconds by placing the Pt heater in close proximity of the programmed region. First, we experimentally verify the existing phenomenological RRESET and Vth drift model for constant annealing temperature at various temperatures between 25°C and 185°C down to 100 μs and show that the measured temperature dependence of the drift coefficient agrees well with what is expected from the existing drift models. Based on the existing drift model for a constant annealing temperature, we derive the analytical expression for the RRESET drift for time-varying annealing temperature and experimentally verify the analytical expression. The derived analytical expression is important to understand the impact of thermal disturbance on PCM reliability such as variations in RRESET and Vth.
Kenneth E Goodson - One of the best experts on this subject based on the ideXlab platform.
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resistance and threshold switching voltage drift behavior in phase change memory and their temperature dependence at microsecond time scales studied using a micro thermal stage
IEEE Transactions on Electron Devices, 2011Co-Authors: Mehdi Asheghi, Fred Hurkx, John P Reifenberg, Kenneth E Goodson, H Philip S WongAbstract:We study the drift behavior of RESET resistance RRESET and threshold switching voltage Vth in phase-change memory (PCM) and their temperature dependence. To extend the temperature-Dependent Measurement to microsecond time scales, we integrate an innovative micro-thermal stage (MTS) on the PCM cell. The MTS changes the temperature of the programmed region of the PCM cell within a few microseconds by placing the Pt heater in close proximity of the programmed region. First, we experimentally verify the existing phenomenological RRESET and Vth drift model for constant annealing temperature at various temperatures between 25°C and 185°C down to 100 μs and show that the measured temperature dependence of the drift coefficient agrees well with what is expected from the existing drift models. Based on the existing drift model for a constant annealing temperature, we derive the analytical expression for the RRESET drift for time-varying annealing temperature and experimentally verify the analytical expression. The derived analytical expression is important to understand the impact of thermal disturbance on PCM reliability such as variations in RRESET and Vth.
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resistance and threshold switching voltage drift behavior in phase change memory and their temperature dependence at microsecond time scales studied using a micro thermal stage
IEEE Transactions on Electron Devices, 2011Co-Authors: Sangbum Kim, Mehdi Asheghi, Fred Hurkx, John P Reifenberg, Kenneth E Goodson, Byoungil Lee, H Philip S WongAbstract:We study the drift behavior of RESET resistance RRESET and threshold switching voltage Vth in phase-change memory (PCM) and their temperature dependence. To extend the temperature-Dependent Measurement to microsecond time scales, we integrate an innovative micro-thermal stage (MTS) on the PCM cell. The MTS changes the temperature of the programmed region of the PCM cell within a few microseconds by placing the Pt heater in close proximity of the programmed region. First, we experimentally verify the existing phenomenological RRESET and Vth drift model for constant annealing temperature at various temperatures between 25°C and 185°C down to 100 μs and show that the measured temperature dependence of the drift coefficient agrees well with what is expected from the existing drift models. Based on the existing drift model for a constant annealing temperature, we derive the analytical expression for the RRESET drift for time-varying annealing temperature and experimentally verify the analytical expression. The derived analytical expression is important to understand the impact of thermal disturbance on PCM reliability such as variations in RRESET and Vth.