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Lars Hultman - One of the best experts on this subject based on the ideXlab platform.

  • a review of metal ion flux controlled growth of metastable tialn by hipims dcms co sputtering
    Surface & Coatings Technology, 2014
    Co-Authors: Grzegorz Greczynski, Stephan Bolz, Ch. Schiffers, Jens Jensen, Werner Kölker, Joseph E Greene, Oliver Lemmer, Jun Lu, Lars Hultman
    Abstract:

    Abstract We review results on the growth of metastable Ti1−xAlxN alloy films by hybrid high-power pulsed and dc magnetron co-sputtering (HIPIMS/DCMS) using the time domain to apply substrate bias either in synchronous with the entire HIPIMS pulse or just the metal-rich portion of the pulse in mixed Ar/N2 discharges. Depending upon which elemental target, Ti or Al, is powered by HIPIMS, distinctly different film-growth kinetic pathways are observed due to charge and mass differences in the metal-ion fluxes incident at the growth surface. Al+ ion irradiation during Al–HIPIMS/Ti–DCMS at 500 °C, with a negative substrate bias Vs = 60 V synchronized to the HIPIMS pulse (thus suppressing Ar+ ion irradiation due to DCMS), leads to single-phase NaCl-structure Ti1−xAlxN films (x ≤ 0.60) with high hardness (> 30 GPa with x > 0.55) and low stress (0.2–0.8 GPa compressive). Ar+ ion bombardment can be further suppressed in favor of predominantly Al+ ion irradiation by synchronizing the substrate bias to only the metal-ion-rich portion of the Al–HIPIMS pulse. In distinct contrast, Ti–HIPIMS/Al–DCMS Ti1 − xAlxN layers grown with Ti+/Ti2 + metal ion irradiation and the same HIPIMS-synchronized Vs value, are two-phase mixtures, NaCl-structure Ti1−xAlxN plus wurtzite AlN, exhibiting low hardness (≃ 18 GPa) with high compressive stresses, up to − 3.5 GPa. In both cases, film properties are controlled by the average metal-ion momentum per Deposited Atom transferred to the film surface. During Ti–HIPIMS, the growing film is subjected to an intense flux of doubly-ionized Ti2+, while Al2+ irradiation is insignificant during Al–HIPIMS. This asymmetry is decisive since the critical limit for precipitation of w-AlN, 135 [eV-amu]1/2, is easily exceeded during Ti–HIPIMS, even with no intentional bias. The high Ti2 + ion flux is primarily due to the second ionization potential (IP2) of Ti being lower than the first IP (IP1) of Ar. New results involving the HIPIMS growth of metastable Ti1−xAlxN alloy films from segmented TiAl targets are consistent with the above conclusions.

Joseph E Greene - One of the best experts on this subject based on the ideXlab platform.

  • a review of metal ion flux controlled growth of metastable tialn by hipims dcms co sputtering
    Surface & Coatings Technology, 2014
    Co-Authors: Grzegorz Greczynski, Stephan Bolz, Ch. Schiffers, Jens Jensen, Werner Kölker, Joseph E Greene, Oliver Lemmer, Jun Lu, Lars Hultman
    Abstract:

    Abstract We review results on the growth of metastable Ti1−xAlxN alloy films by hybrid high-power pulsed and dc magnetron co-sputtering (HIPIMS/DCMS) using the time domain to apply substrate bias either in synchronous with the entire HIPIMS pulse or just the metal-rich portion of the pulse in mixed Ar/N2 discharges. Depending upon which elemental target, Ti or Al, is powered by HIPIMS, distinctly different film-growth kinetic pathways are observed due to charge and mass differences in the metal-ion fluxes incident at the growth surface. Al+ ion irradiation during Al–HIPIMS/Ti–DCMS at 500 °C, with a negative substrate bias Vs = 60 V synchronized to the HIPIMS pulse (thus suppressing Ar+ ion irradiation due to DCMS), leads to single-phase NaCl-structure Ti1−xAlxN films (x ≤ 0.60) with high hardness (> 30 GPa with x > 0.55) and low stress (0.2–0.8 GPa compressive). Ar+ ion bombardment can be further suppressed in favor of predominantly Al+ ion irradiation by synchronizing the substrate bias to only the metal-ion-rich portion of the Al–HIPIMS pulse. In distinct contrast, Ti–HIPIMS/Al–DCMS Ti1 − xAlxN layers grown with Ti+/Ti2 + metal ion irradiation and the same HIPIMS-synchronized Vs value, are two-phase mixtures, NaCl-structure Ti1−xAlxN plus wurtzite AlN, exhibiting low hardness (≃ 18 GPa) with high compressive stresses, up to − 3.5 GPa. In both cases, film properties are controlled by the average metal-ion momentum per Deposited Atom transferred to the film surface. During Ti–HIPIMS, the growing film is subjected to an intense flux of doubly-ionized Ti2+, while Al2+ irradiation is insignificant during Al–HIPIMS. This asymmetry is decisive since the critical limit for precipitation of w-AlN, 135 [eV-amu]1/2, is easily exceeded during Ti–HIPIMS, even with no intentional bias. The high Ti2 + ion flux is primarily due to the second ionization potential (IP2) of Ti being lower than the first IP (IP1) of Ar. New results involving the HIPIMS growth of metastable Ti1−xAlxN alloy films from segmented TiAl targets are consistent with the above conclusions.

  • strain free single phase metastable ti0 38al0 62n alloys with high hardness metal ion energy vs momentum effects during film growth by hybrid high power pulsed dc magnetron cosputtering
    Thin Solid Films, 2014
    Co-Authors: Grzegorz Greczynski, Stephan Bolz, Ch. Schiffers, Jens Jensen, Werner Kölker, Joseph E Greene, I Petrov, Oliver Lemmer
    Abstract:

    Abstract A hybrid deposition process consisting of reactive high-power pulsed and dc magnetron cosputtering (HIPIMS and DCMS) from Ti and Al targets is used to grow Ti 1− x Al x N alloys, with x  ~ 0.6, on Si(001) at 500 °C. Two series of films are Deposited in which the energy and momentum of metal ions incident at the growing film are individually varied. In both sets of experiments, a negative bias V s ranging from 20 to 280 V is applied to the substrate in synchronous, as determined by in-situ mass spectrometry, with the metal-ion-rich part of the HIPIMS pulse. Ion momentum is varied by switching the HIPIMS and dc power supplies to change the mass m and average charge of the primary metal ion. Al-HIPIMS/Ti-DCMS layers grown under Al + ( m Al  = 26.98 amu) bombardment with 20 ≤  V s  ≤ 160 V are single-phase NaCl-structure alloys, while films Deposited with V s  > 160 V are two-phase, cubic plus wurtzite. The corresponding critical average metal-ion momentum transfer per Deposited Atom for phase separation is 〈 p d ⁎ 〉 ≥ 135 [eV-amu] 1/2 . In distinct contrast, layers Deposited in the Ti-HIPIMS/Al-DCMS configuration with Ti + /Ti 2+ ( m Ti  = 47.88 amu) ion irradiation are two-phase even with the lowest bias, V s  = 20 V, for which 〈 p d ⁎ 〉 > 135 [eV-amu] 1/2 . Precipitation of wurtzite-structure AlN is primarily determined by the average metal-ion momentum transfer to the growing film, rather than by the Deposited metal-ion energy. Ti-HIPIMS/Al-DCMS layers grown with V s  = 20 V are two-phase with compressive stress σ  = − 2 GPa which increases to − 6.2 GPa at V s  = 120 V; hardness H values range from 17.5 to 27 GPa and are directly correlated with σ . However, for Al-HIPIMS/Ti-DCMS, the relatively low mass and single charge of the Al + ion permits tuning properties of metastable cubic Ti 0.38 Al 0.62  N by adjusting V s to vary, for example, the hardness from 12 to 31 GPa while maintaining σ  ~ 0.

Grzegorz Greczynski - One of the best experts on this subject based on the ideXlab platform.

  • a review of metal ion flux controlled growth of metastable tialn by hipims dcms co sputtering
    Surface & Coatings Technology, 2014
    Co-Authors: Grzegorz Greczynski, Stephan Bolz, Ch. Schiffers, Jens Jensen, Werner Kölker, Joseph E Greene, Oliver Lemmer, Jun Lu, Lars Hultman
    Abstract:

    Abstract We review results on the growth of metastable Ti1−xAlxN alloy films by hybrid high-power pulsed and dc magnetron co-sputtering (HIPIMS/DCMS) using the time domain to apply substrate bias either in synchronous with the entire HIPIMS pulse or just the metal-rich portion of the pulse in mixed Ar/N2 discharges. Depending upon which elemental target, Ti or Al, is powered by HIPIMS, distinctly different film-growth kinetic pathways are observed due to charge and mass differences in the metal-ion fluxes incident at the growth surface. Al+ ion irradiation during Al–HIPIMS/Ti–DCMS at 500 °C, with a negative substrate bias Vs = 60 V synchronized to the HIPIMS pulse (thus suppressing Ar+ ion irradiation due to DCMS), leads to single-phase NaCl-structure Ti1−xAlxN films (x ≤ 0.60) with high hardness (> 30 GPa with x > 0.55) and low stress (0.2–0.8 GPa compressive). Ar+ ion bombardment can be further suppressed in favor of predominantly Al+ ion irradiation by synchronizing the substrate bias to only the metal-ion-rich portion of the Al–HIPIMS pulse. In distinct contrast, Ti–HIPIMS/Al–DCMS Ti1 − xAlxN layers grown with Ti+/Ti2 + metal ion irradiation and the same HIPIMS-synchronized Vs value, are two-phase mixtures, NaCl-structure Ti1−xAlxN plus wurtzite AlN, exhibiting low hardness (≃ 18 GPa) with high compressive stresses, up to − 3.5 GPa. In both cases, film properties are controlled by the average metal-ion momentum per Deposited Atom transferred to the film surface. During Ti–HIPIMS, the growing film is subjected to an intense flux of doubly-ionized Ti2+, while Al2+ irradiation is insignificant during Al–HIPIMS. This asymmetry is decisive since the critical limit for precipitation of w-AlN, 135 [eV-amu]1/2, is easily exceeded during Ti–HIPIMS, even with no intentional bias. The high Ti2 + ion flux is primarily due to the second ionization potential (IP2) of Ti being lower than the first IP (IP1) of Ar. New results involving the HIPIMS growth of metastable Ti1−xAlxN alloy films from segmented TiAl targets are consistent with the above conclusions.

  • strain free single phase metastable ti0 38al0 62n alloys with high hardness metal ion energy vs momentum effects during film growth by hybrid high power pulsed dc magnetron cosputtering
    Thin Solid Films, 2014
    Co-Authors: Grzegorz Greczynski, Stephan Bolz, Ch. Schiffers, Jens Jensen, Werner Kölker, Joseph E Greene, I Petrov, Oliver Lemmer
    Abstract:

    Abstract A hybrid deposition process consisting of reactive high-power pulsed and dc magnetron cosputtering (HIPIMS and DCMS) from Ti and Al targets is used to grow Ti 1− x Al x N alloys, with x  ~ 0.6, on Si(001) at 500 °C. Two series of films are Deposited in which the energy and momentum of metal ions incident at the growing film are individually varied. In both sets of experiments, a negative bias V s ranging from 20 to 280 V is applied to the substrate in synchronous, as determined by in-situ mass spectrometry, with the metal-ion-rich part of the HIPIMS pulse. Ion momentum is varied by switching the HIPIMS and dc power supplies to change the mass m and average charge of the primary metal ion. Al-HIPIMS/Ti-DCMS layers grown under Al + ( m Al  = 26.98 amu) bombardment with 20 ≤  V s  ≤ 160 V are single-phase NaCl-structure alloys, while films Deposited with V s  > 160 V are two-phase, cubic plus wurtzite. The corresponding critical average metal-ion momentum transfer per Deposited Atom for phase separation is 〈 p d ⁎ 〉 ≥ 135 [eV-amu] 1/2 . In distinct contrast, layers Deposited in the Ti-HIPIMS/Al-DCMS configuration with Ti + /Ti 2+ ( m Ti  = 47.88 amu) ion irradiation are two-phase even with the lowest bias, V s  = 20 V, for which 〈 p d ⁎ 〉 > 135 [eV-amu] 1/2 . Precipitation of wurtzite-structure AlN is primarily determined by the average metal-ion momentum transfer to the growing film, rather than by the Deposited metal-ion energy. Ti-HIPIMS/Al-DCMS layers grown with V s  = 20 V are two-phase with compressive stress σ  = − 2 GPa which increases to − 6.2 GPa at V s  = 120 V; hardness H values range from 17.5 to 27 GPa and are directly correlated with σ . However, for Al-HIPIMS/Ti-DCMS, the relatively low mass and single charge of the Al + ion permits tuning properties of metastable cubic Ti 0.38 Al 0.62  N by adjusting V s to vary, for example, the hardness from 12 to 31 GPa while maintaining σ  ~ 0.

Ch. Schiffers - One of the best experts on this subject based on the ideXlab platform.

  • a review of metal ion flux controlled growth of metastable tialn by hipims dcms co sputtering
    Surface & Coatings Technology, 2014
    Co-Authors: Grzegorz Greczynski, Stephan Bolz, Ch. Schiffers, Jens Jensen, Werner Kölker, Joseph E Greene, Oliver Lemmer, Jun Lu, Lars Hultman
    Abstract:

    Abstract We review results on the growth of metastable Ti1−xAlxN alloy films by hybrid high-power pulsed and dc magnetron co-sputtering (HIPIMS/DCMS) using the time domain to apply substrate bias either in synchronous with the entire HIPIMS pulse or just the metal-rich portion of the pulse in mixed Ar/N2 discharges. Depending upon which elemental target, Ti or Al, is powered by HIPIMS, distinctly different film-growth kinetic pathways are observed due to charge and mass differences in the metal-ion fluxes incident at the growth surface. Al+ ion irradiation during Al–HIPIMS/Ti–DCMS at 500 °C, with a negative substrate bias Vs = 60 V synchronized to the HIPIMS pulse (thus suppressing Ar+ ion irradiation due to DCMS), leads to single-phase NaCl-structure Ti1−xAlxN films (x ≤ 0.60) with high hardness (> 30 GPa with x > 0.55) and low stress (0.2–0.8 GPa compressive). Ar+ ion bombardment can be further suppressed in favor of predominantly Al+ ion irradiation by synchronizing the substrate bias to only the metal-ion-rich portion of the Al–HIPIMS pulse. In distinct contrast, Ti–HIPIMS/Al–DCMS Ti1 − xAlxN layers grown with Ti+/Ti2 + metal ion irradiation and the same HIPIMS-synchronized Vs value, are two-phase mixtures, NaCl-structure Ti1−xAlxN plus wurtzite AlN, exhibiting low hardness (≃ 18 GPa) with high compressive stresses, up to − 3.5 GPa. In both cases, film properties are controlled by the average metal-ion momentum per Deposited Atom transferred to the film surface. During Ti–HIPIMS, the growing film is subjected to an intense flux of doubly-ionized Ti2+, while Al2+ irradiation is insignificant during Al–HIPIMS. This asymmetry is decisive since the critical limit for precipitation of w-AlN, 135 [eV-amu]1/2, is easily exceeded during Ti–HIPIMS, even with no intentional bias. The high Ti2 + ion flux is primarily due to the second ionization potential (IP2) of Ti being lower than the first IP (IP1) of Ar. New results involving the HIPIMS growth of metastable Ti1−xAlxN alloy films from segmented TiAl targets are consistent with the above conclusions.

  • strain free single phase metastable ti0 38al0 62n alloys with high hardness metal ion energy vs momentum effects during film growth by hybrid high power pulsed dc magnetron cosputtering
    Thin Solid Films, 2014
    Co-Authors: Grzegorz Greczynski, Stephan Bolz, Ch. Schiffers, Jens Jensen, Werner Kölker, Joseph E Greene, I Petrov, Oliver Lemmer
    Abstract:

    Abstract A hybrid deposition process consisting of reactive high-power pulsed and dc magnetron cosputtering (HIPIMS and DCMS) from Ti and Al targets is used to grow Ti 1− x Al x N alloys, with x  ~ 0.6, on Si(001) at 500 °C. Two series of films are Deposited in which the energy and momentum of metal ions incident at the growing film are individually varied. In both sets of experiments, a negative bias V s ranging from 20 to 280 V is applied to the substrate in synchronous, as determined by in-situ mass spectrometry, with the metal-ion-rich part of the HIPIMS pulse. Ion momentum is varied by switching the HIPIMS and dc power supplies to change the mass m and average charge of the primary metal ion. Al-HIPIMS/Ti-DCMS layers grown under Al + ( m Al  = 26.98 amu) bombardment with 20 ≤  V s  ≤ 160 V are single-phase NaCl-structure alloys, while films Deposited with V s  > 160 V are two-phase, cubic plus wurtzite. The corresponding critical average metal-ion momentum transfer per Deposited Atom for phase separation is 〈 p d ⁎ 〉 ≥ 135 [eV-amu] 1/2 . In distinct contrast, layers Deposited in the Ti-HIPIMS/Al-DCMS configuration with Ti + /Ti 2+ ( m Ti  = 47.88 amu) ion irradiation are two-phase even with the lowest bias, V s  = 20 V, for which 〈 p d ⁎ 〉 > 135 [eV-amu] 1/2 . Precipitation of wurtzite-structure AlN is primarily determined by the average metal-ion momentum transfer to the growing film, rather than by the Deposited metal-ion energy. Ti-HIPIMS/Al-DCMS layers grown with V s  = 20 V are two-phase with compressive stress σ  = − 2 GPa which increases to − 6.2 GPa at V s  = 120 V; hardness H values range from 17.5 to 27 GPa and are directly correlated with σ . However, for Al-HIPIMS/Ti-DCMS, the relatively low mass and single charge of the Al + ion permits tuning properties of metastable cubic Ti 0.38 Al 0.62  N by adjusting V s to vary, for example, the hardness from 12 to 31 GPa while maintaining σ  ~ 0.

  • A review of metal-ion-flux-controlled growth of metastable TiAlN by HIPIMS/DCMS co-sputtering
    'Elsevier BV', 2014
    Co-Authors: Greczynski Grzegorz, Ch. Schiffers, Lu Jun, Jensen Jens, Bolz S., Koelker W., Lemmer O., Greene, Joseph E, Hultman Lars
    Abstract:

    We review results on the growth of metastable Ti1-xAlxN alloy films by hybrid high-power pulsed and dc magnetron co-sputtering (HIPIMS/DCMS) using the time domain to apply substrate bias either in synchronous with the entire HIPIMS pulse or just the metal-rich portion of the pulse in mixed Ar/N-2 discharges. Depending upon which elemental target, Ti or Al, is powered by HIPIMS, distinctly different film-growth kinetic pathways are observed due to charge and mass differences in the metal-ion fluxes incident at the growth surface. Al+ ion irradiation during Al-HIPIMS/Ti-DCMS at 500 degrees C, with a negative substrate bias V-s = 60 V synchronized to the HIPIMS pulse (thus suppressing Ar+ ion irradiation due to DCMS), leads to single-phase NaCl-structure Ti1-xAlxN films (x less than= 0.60) with high hardness (greater than30 GPa with x greater than 0.55) and low stress (0.2-0.8 GPa compressive). Ar+ ion bombardment can be further suppressed in favor of predominantly Al+ ion irradiation by synchronizing the substrate bias to only the metal-ion-rich portion of the Al-HIPIMS pulse. In distinct contrast Ti-HIPIMS/Al-DCMSTi1-xAlxN layers grown with Ti+/Ti2+ metal ion irradiation and the same HIPIMS-synchronized V-s value, are two-phase mixtures, NaCl-structure Ti1-xAlxN plus wurtzite AlN, exhibiting low hardness (similar or equal to 18 GPa) with high compressive stresses, up to -3.5 GPa. In both cases, film properties are controlled by the average metal-ion momentum per Deposited Atom less thanp(d)greater than transferred to the film surface. During Ti-HIPIMS, the growing film is subjected to an intense flux of doubly-ionized Ti2+, while Al2+ irradiation is insignificant during Al-HIPIMS. This asymmetry is decisive since the critical less thanp(d)greater than limit for precipitation of w-AlN, 135 [eV-amu](1/2), is easily exceeded during Ti-HIPIMS, even with no intentional bias. The high Ti2+ ion flux is primarily due to the second ionization potential (IP2) of Ti being lower than the first IP (IP1) of Ar. New results involving the HIPIMS growth of metastable Ti1-xAlxN alloy films from segmented TiAl targets are consistent with the above conclusions.Funding Agencies|European Research Council (ERC) through an Advanced Grant; VINN Excellence Center Functional Nanoscale Materials (FunMat)

Stephan Bolz - One of the best experts on this subject based on the ideXlab platform.

  • a review of metal ion flux controlled growth of metastable tialn by hipims dcms co sputtering
    Surface & Coatings Technology, 2014
    Co-Authors: Grzegorz Greczynski, Stephan Bolz, Ch. Schiffers, Jens Jensen, Werner Kölker, Joseph E Greene, Oliver Lemmer, Jun Lu, Lars Hultman
    Abstract:

    Abstract We review results on the growth of metastable Ti1−xAlxN alloy films by hybrid high-power pulsed and dc magnetron co-sputtering (HIPIMS/DCMS) using the time domain to apply substrate bias either in synchronous with the entire HIPIMS pulse or just the metal-rich portion of the pulse in mixed Ar/N2 discharges. Depending upon which elemental target, Ti or Al, is powered by HIPIMS, distinctly different film-growth kinetic pathways are observed due to charge and mass differences in the metal-ion fluxes incident at the growth surface. Al+ ion irradiation during Al–HIPIMS/Ti–DCMS at 500 °C, with a negative substrate bias Vs = 60 V synchronized to the HIPIMS pulse (thus suppressing Ar+ ion irradiation due to DCMS), leads to single-phase NaCl-structure Ti1−xAlxN films (x ≤ 0.60) with high hardness (> 30 GPa with x > 0.55) and low stress (0.2–0.8 GPa compressive). Ar+ ion bombardment can be further suppressed in favor of predominantly Al+ ion irradiation by synchronizing the substrate bias to only the metal-ion-rich portion of the Al–HIPIMS pulse. In distinct contrast, Ti–HIPIMS/Al–DCMS Ti1 − xAlxN layers grown with Ti+/Ti2 + metal ion irradiation and the same HIPIMS-synchronized Vs value, are two-phase mixtures, NaCl-structure Ti1−xAlxN plus wurtzite AlN, exhibiting low hardness (≃ 18 GPa) with high compressive stresses, up to − 3.5 GPa. In both cases, film properties are controlled by the average metal-ion momentum per Deposited Atom transferred to the film surface. During Ti–HIPIMS, the growing film is subjected to an intense flux of doubly-ionized Ti2+, while Al2+ irradiation is insignificant during Al–HIPIMS. This asymmetry is decisive since the critical limit for precipitation of w-AlN, 135 [eV-amu]1/2, is easily exceeded during Ti–HIPIMS, even with no intentional bias. The high Ti2 + ion flux is primarily due to the second ionization potential (IP2) of Ti being lower than the first IP (IP1) of Ar. New results involving the HIPIMS growth of metastable Ti1−xAlxN alloy films from segmented TiAl targets are consistent with the above conclusions.

  • strain free single phase metastable ti0 38al0 62n alloys with high hardness metal ion energy vs momentum effects during film growth by hybrid high power pulsed dc magnetron cosputtering
    Thin Solid Films, 2014
    Co-Authors: Grzegorz Greczynski, Stephan Bolz, Ch. Schiffers, Jens Jensen, Werner Kölker, Joseph E Greene, I Petrov, Oliver Lemmer
    Abstract:

    Abstract A hybrid deposition process consisting of reactive high-power pulsed and dc magnetron cosputtering (HIPIMS and DCMS) from Ti and Al targets is used to grow Ti 1− x Al x N alloys, with x  ~ 0.6, on Si(001) at 500 °C. Two series of films are Deposited in which the energy and momentum of metal ions incident at the growing film are individually varied. In both sets of experiments, a negative bias V s ranging from 20 to 280 V is applied to the substrate in synchronous, as determined by in-situ mass spectrometry, with the metal-ion-rich part of the HIPIMS pulse. Ion momentum is varied by switching the HIPIMS and dc power supplies to change the mass m and average charge of the primary metal ion. Al-HIPIMS/Ti-DCMS layers grown under Al + ( m Al  = 26.98 amu) bombardment with 20 ≤  V s  ≤ 160 V are single-phase NaCl-structure alloys, while films Deposited with V s  > 160 V are two-phase, cubic plus wurtzite. The corresponding critical average metal-ion momentum transfer per Deposited Atom for phase separation is 〈 p d ⁎ 〉 ≥ 135 [eV-amu] 1/2 . In distinct contrast, layers Deposited in the Ti-HIPIMS/Al-DCMS configuration with Ti + /Ti 2+ ( m Ti  = 47.88 amu) ion irradiation are two-phase even with the lowest bias, V s  = 20 V, for which 〈 p d ⁎ 〉 > 135 [eV-amu] 1/2 . Precipitation of wurtzite-structure AlN is primarily determined by the average metal-ion momentum transfer to the growing film, rather than by the Deposited metal-ion energy. Ti-HIPIMS/Al-DCMS layers grown with V s  = 20 V are two-phase with compressive stress σ  = − 2 GPa which increases to − 6.2 GPa at V s  = 120 V; hardness H values range from 17.5 to 27 GPa and are directly correlated with σ . However, for Al-HIPIMS/Ti-DCMS, the relatively low mass and single charge of the Al + ion permits tuning properties of metastable cubic Ti 0.38 Al 0.62  N by adjusting V s to vary, for example, the hardness from 12 to 31 GPa while maintaining σ  ~ 0.