The Experts below are selected from a list of 282 Experts worldwide ranked by ideXlab platform
Akihiko Ishitani - One of the best experts on this subject based on the ideXlab platform.
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ultrathin tantalum oxide capacitor dielectric layers fabricated using rapid thermal nitridation prior to low pressure chemical vapor deposition
Journal of The Electrochemical Society, 1993Co-Authors: Satoshi Kamiyama, Akira Sakai, Hiroshi Suzuki, Pierreyves Lesaicherre, Iwao Nishiyama, Akihiko IshitaniAbstract:We describe the formation of ultrathin tantalum oxide capacitors, using rapid thermal nitridation of the storage-node polycrystalline-silicon surface prior to low pressure chemical vapor deposition of tantalum oxide. The amorphous tantalum oxide Film is Deposited on the nitrided polysilicon surface using penta-ethoxy-tantalum [Ta(OC 2 H 5 ) 5 ] and oxygen (O 2 ) gas mixture at 410 o C. The Films are annealed at 600-900 o C in dry O 2 . Densification of the as-Deposited Film by annealing in dry O 2 is indispensable to the formation of highly reliable ultrathin tantalum oxide capacitors. During this densification, CH 4 and H 2 O desorb from the as-Deposited Film, and the Film crystallizes into an orthorhombic structure
Satoshi Kamiyama - One of the best experts on this subject based on the ideXlab platform.
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ultrathin tantalum oxide capacitor dielectric layers fabricated using rapid thermal nitridation prior to low pressure chemical vapor deposition
Journal of The Electrochemical Society, 1993Co-Authors: Satoshi Kamiyama, Akira Sakai, Hiroshi Suzuki, Pierreyves Lesaicherre, Iwao Nishiyama, Akihiko IshitaniAbstract:We describe the formation of ultrathin tantalum oxide capacitors, using rapid thermal nitridation of the storage-node polycrystalline-silicon surface prior to low pressure chemical vapor deposition of tantalum oxide. The amorphous tantalum oxide Film is Deposited on the nitrided polysilicon surface using penta-ethoxy-tantalum [Ta(OC 2 H 5 ) 5 ] and oxygen (O 2 ) gas mixture at 410 o C. The Films are annealed at 600-900 o C in dry O 2 . Densification of the as-Deposited Film by annealing in dry O 2 is indispensable to the formation of highly reliable ultrathin tantalum oxide capacitors. During this densification, CH 4 and H 2 O desorb from the as-Deposited Film, and the Film crystallizes into an orthorhombic structure
Iwao Nishiyama - One of the best experts on this subject based on the ideXlab platform.
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Ultrathin Tantalum Oxide Capacitor Dielectric Layers Fabricated Using Rapid Thermal Nitridation prior to Low Pressure Chemical Vapor Deposition
2016Co-Authors: Satashi Kamiyama, Hiroshi Suzuki, Pierreyves Lesaicherre, Iwao Nishiyama, Akira A Sakai, Akihiko Ishitani *&aposAbstract:We describe the formation of ultrathin tanta lum oxide capacitors, using rapid thermal nitridation of the storage-node polycrystalline-silicon surface prior to low pressure chemical vapor deposition of tanta lum oxide. The amorphous tanta-lum oxide Film is Deposited on the nitrided polysilicon surface using penta-ethoxy-tantalum [Ta(OC~Hs)~] and oxygen (09) gas mixture at 470 ~ The Films are annealed at 600-900 ~ in dry 02. Densification of the as-Deposited Film by annealing in dry O2 is indispensable to the formation of highly reliable ultrathin tanta lum oxide capacitors. Dur ing this densification, CH4 and H20 desorb f rom the as-Deposited Film, and the Film crystallizes into an orthorhombic structure. The RTN treatment allows a reduction of the SiO2 equivalent thickness (t~q) of the capacitor dielectric layer and results in superior leakage and reliability characteristics. Highly integrated memory devices, such as 256 Mbit dy-namic random access memories (DRAMs), require very thin dielectric Films for three-dimensional stacked or trenched capacitors. 1'2 These memory devices have to hold a sufficient storage charge in a memory cell capacitor to pre-vent soft errors. 3Tantalum oxide Films prepared by lo
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ultrathin tantalum oxide capacitor dielectric layers fabricated using rapid thermal nitridation prior to low pressure chemical vapor deposition
Journal of The Electrochemical Society, 1993Co-Authors: Satoshi Kamiyama, Akira Sakai, Hiroshi Suzuki, Pierreyves Lesaicherre, Iwao Nishiyama, Akihiko IshitaniAbstract:We describe the formation of ultrathin tantalum oxide capacitors, using rapid thermal nitridation of the storage-node polycrystalline-silicon surface prior to low pressure chemical vapor deposition of tantalum oxide. The amorphous tantalum oxide Film is Deposited on the nitrided polysilicon surface using penta-ethoxy-tantalum [Ta(OC 2 H 5 ) 5 ] and oxygen (O 2 ) gas mixture at 410 o C. The Films are annealed at 600-900 o C in dry O 2 . Densification of the as-Deposited Film by annealing in dry O 2 is indispensable to the formation of highly reliable ultrathin tantalum oxide capacitors. During this densification, CH 4 and H 2 O desorb from the as-Deposited Film, and the Film crystallizes into an orthorhombic structure
Hiroshi Suzuki - One of the best experts on this subject based on the ideXlab platform.
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Ultrathin Tantalum Oxide Capacitor Dielectric Layers Fabricated Using Rapid Thermal Nitridation prior to Low Pressure Chemical Vapor Deposition
2016Co-Authors: Satashi Kamiyama, Hiroshi Suzuki, Pierreyves Lesaicherre, Iwao Nishiyama, Akira A Sakai, Akihiko Ishitani *&aposAbstract:We describe the formation of ultrathin tanta lum oxide capacitors, using rapid thermal nitridation of the storage-node polycrystalline-silicon surface prior to low pressure chemical vapor deposition of tanta lum oxide. The amorphous tanta-lum oxide Film is Deposited on the nitrided polysilicon surface using penta-ethoxy-tantalum [Ta(OC~Hs)~] and oxygen (09) gas mixture at 470 ~ The Films are annealed at 600-900 ~ in dry 02. Densification of the as-Deposited Film by annealing in dry O2 is indispensable to the formation of highly reliable ultrathin tanta lum oxide capacitors. Dur ing this densification, CH4 and H20 desorb f rom the as-Deposited Film, and the Film crystallizes into an orthorhombic structure. The RTN treatment allows a reduction of the SiO2 equivalent thickness (t~q) of the capacitor dielectric layer and results in superior leakage and reliability characteristics. Highly integrated memory devices, such as 256 Mbit dy-namic random access memories (DRAMs), require very thin dielectric Films for three-dimensional stacked or trenched capacitors. 1'2 These memory devices have to hold a sufficient storage charge in a memory cell capacitor to pre-vent soft errors. 3Tantalum oxide Films prepared by lo
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ultrathin tantalum oxide capacitor dielectric layers fabricated using rapid thermal nitridation prior to low pressure chemical vapor deposition
Journal of The Electrochemical Society, 1993Co-Authors: Satoshi Kamiyama, Akira Sakai, Hiroshi Suzuki, Pierreyves Lesaicherre, Iwao Nishiyama, Akihiko IshitaniAbstract:We describe the formation of ultrathin tantalum oxide capacitors, using rapid thermal nitridation of the storage-node polycrystalline-silicon surface prior to low pressure chemical vapor deposition of tantalum oxide. The amorphous tantalum oxide Film is Deposited on the nitrided polysilicon surface using penta-ethoxy-tantalum [Ta(OC 2 H 5 ) 5 ] and oxygen (O 2 ) gas mixture at 410 o C. The Films are annealed at 600-900 o C in dry O 2 . Densification of the as-Deposited Film by annealing in dry O 2 is indispensable to the formation of highly reliable ultrathin tantalum oxide capacitors. During this densification, CH 4 and H 2 O desorb from the as-Deposited Film, and the Film crystallizes into an orthorhombic structure
Pierreyves Lesaicherre - One of the best experts on this subject based on the ideXlab platform.
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Ultrathin Tantalum Oxide Capacitor Dielectric Layers Fabricated Using Rapid Thermal Nitridation prior to Low Pressure Chemical Vapor Deposition
2016Co-Authors: Satashi Kamiyama, Hiroshi Suzuki, Pierreyves Lesaicherre, Iwao Nishiyama, Akira A Sakai, Akihiko Ishitani *&aposAbstract:We describe the formation of ultrathin tanta lum oxide capacitors, using rapid thermal nitridation of the storage-node polycrystalline-silicon surface prior to low pressure chemical vapor deposition of tanta lum oxide. The amorphous tanta-lum oxide Film is Deposited on the nitrided polysilicon surface using penta-ethoxy-tantalum [Ta(OC~Hs)~] and oxygen (09) gas mixture at 470 ~ The Films are annealed at 600-900 ~ in dry 02. Densification of the as-Deposited Film by annealing in dry O2 is indispensable to the formation of highly reliable ultrathin tanta lum oxide capacitors. Dur ing this densification, CH4 and H20 desorb f rom the as-Deposited Film, and the Film crystallizes into an orthorhombic structure. The RTN treatment allows a reduction of the SiO2 equivalent thickness (t~q) of the capacitor dielectric layer and results in superior leakage and reliability characteristics. Highly integrated memory devices, such as 256 Mbit dy-namic random access memories (DRAMs), require very thin dielectric Films for three-dimensional stacked or trenched capacitors. 1'2 These memory devices have to hold a sufficient storage charge in a memory cell capacitor to pre-vent soft errors. 3Tantalum oxide Films prepared by lo
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ultrathin tantalum oxide capacitor dielectric layers fabricated using rapid thermal nitridation prior to low pressure chemical vapor deposition
Journal of The Electrochemical Society, 1993Co-Authors: Satoshi Kamiyama, Akira Sakai, Hiroshi Suzuki, Pierreyves Lesaicherre, Iwao Nishiyama, Akihiko IshitaniAbstract:We describe the formation of ultrathin tantalum oxide capacitors, using rapid thermal nitridation of the storage-node polycrystalline-silicon surface prior to low pressure chemical vapor deposition of tantalum oxide. The amorphous tantalum oxide Film is Deposited on the nitrided polysilicon surface using penta-ethoxy-tantalum [Ta(OC 2 H 5 ) 5 ] and oxygen (O 2 ) gas mixture at 410 o C. The Films are annealed at 600-900 o C in dry O 2 . Densification of the as-Deposited Film by annealing in dry O 2 is indispensable to the formation of highly reliable ultrathin tantalum oxide capacitors. During this densification, CH 4 and H 2 O desorb from the as-Deposited Film, and the Film crystallizes into an orthorhombic structure