The Experts below are selected from a list of 81 Experts worldwide ranked by ideXlab platform
Isamu Miyamoto - One of the best experts on this subject based on the ideXlab platform.
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Laser-induced rear ablation of metal thin films
Second International Symposium on Laser Precision Microfabrication, 2002Co-Authors: Tomokazu Sano, Hirokazu Yamada, Takayuki Nakayama, Isamu MiyamotoAbstract:The purpose of this study is to investigate the correlation between Laser Induced Forward Transfer (LIFT) process observed experimentally and the Deposited Structure, especially the size accuracy. Ablated plume and shadowgraph of transferring materials were observed using image intensified CCD camera. The intensity of reflected He-Ne laser from the front and rear side of thin films, respectively, were measured using photodiode to investigate the behavior of thin film during laser pulse. Metal thin films (Au and Ni), with several tens - hundreds of nanometer in thickness Deposited on quartz substrate using ion sputtering deposition method, were irradiated by KrF excimer laser (wavelength 248 nm, pulse width 30 ns). The measurement of the reflected He-ne laser shows that the film removal finishes during incident laser pulse. Ablated plume images and shadowgraphs of transferring materials show that the velocity of both the top of ablated plume and the transferring materials become faster in increase fo fluence, and that the transferring materials precede the plume. Optimum fluence exists at each film thickness to achieve high size accuracy of Deposited Structure. At lower fluence, the Deposited Structure shows bad feature due to incomplete removal from the support substrate. At higher fluence, the big shock causes the wide range of spread of Deposited Structure when the transferring particles have a collision with the acceptor substrate. At optimum fluence, the high size accuracy of Deposited Structure is achieved as the film-substrate distance is made as short as possible.
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Experimental investigation of laser induced forward transfer process of metal thin films
Applied Surface Science, 2001Co-Authors: Tomokazu Sano, Hirokazu Yamada, Takayuki Nakayama, Isamu MiyamotoAbstract:Abstract Dependence of size accuracy of Deposited Structure on the film–acceptor substrate distance and fluence, and the factors which influence the dependences were investigated. Au and Ni thin films of several tens to hundreds of nanometer thickness Deposited on quartz substrates using ion sputtering deposition were irradiated by single pulse of KrF excimer laser (wavelength: 248 nm, pulse width 30 ns). Changes in the intensity of reflected He–Ne laser from the front and rear sides of the thin films show that film removal finishes during the excimer laser pulse. Plume images and shadowgraphs of transferring materials show that the velocity of both the leading edge of the plume and the transferring materials become faster with increasing fluence, and that the transferring material precedes the plume. At lower fluences, the Deposited Structure shows bad appearance due to incomplete removal from the support substrate. At higher fluences, the big shock causes the wide range of spread of Deposited Structure when the transferring particles have a collision with the acceptor substrate. At optimum fluences, high size accuracy of the Deposited Structure is achieved when the film–substrate distance is made as short as possible.
Laurent Gaillon - One of the best experts on this subject based on the ideXlab platform.
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Sn(TFSI) 2 as Suitable Salt For the Electrodeposition of NanoStructured Cu 6 Sn 5 - Sn Composite obtained on Cu electrode in Ionic Liquid
Inorganic Chemistry Frontiers, 2019Co-Authors: Nadia Soulmi, Ana-gabriela Porras-gutierrez, Natalia Mordvinova, Oleg Lebedev, Cécile Rizzi, Juliette Sirieix-plenet, Frédéric Lantelme, Henri Groult, Damien Dambournet, Laurent GaillonAbstract:The preparation of binder and carbon-free electrodes is of great interest owing to higher energy density. In this scope, electrodeposition is a suitable method that can be easily scale up providing that suitable chemical reactants are used. In this work, we used highly soluble Sn precursor based on TFSI counter ion dissolved in [EMIm + ][TFSI-] ionic liquid. The use of similar anionic groups in both Sn precursor and solvent allowed to avoid impurities typically encoureted when using Sn chloride precursor. The resulting solution was characterized by cyclic voltametry using either inert (Mo) and reactive substrate (Cu). In both cases, the electrodeposition occured in a diffusion controlled process. In the case of Cu, however, a Cu-Sn alloy that is η-Cu6Sn5 phase was identified. A FIB cross section revealed that Cu and Sn interdiffused and that no epitaxial growth occured. Prolonging the electrodeposition time favored the formation of β-Sn because Cu could no longer diffuse within the Deposited Structure. This resulted in a mixed β-Sn/η-Cu6Sn5 composite whose proportions depended on the deposition duration time. The Deposited samples were directly assembled in lithium coin cells to characterize the capacity and cyclability of binder and carbon-free electrodes. Increasing the mass of Deposited sample degraded the capacity and reversility of the system which was explained by a lower ability to accommodate the volume variation occurring during the electrochemical lithiation/delithiation process.
Tomokazu Sano - One of the best experts on this subject based on the ideXlab platform.
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Laser-induced rear ablation of metal thin films
Second International Symposium on Laser Precision Microfabrication, 2002Co-Authors: Tomokazu Sano, Hirokazu Yamada, Takayuki Nakayama, Isamu MiyamotoAbstract:The purpose of this study is to investigate the correlation between Laser Induced Forward Transfer (LIFT) process observed experimentally and the Deposited Structure, especially the size accuracy. Ablated plume and shadowgraph of transferring materials were observed using image intensified CCD camera. The intensity of reflected He-Ne laser from the front and rear side of thin films, respectively, were measured using photodiode to investigate the behavior of thin film during laser pulse. Metal thin films (Au and Ni), with several tens - hundreds of nanometer in thickness Deposited on quartz substrate using ion sputtering deposition method, were irradiated by KrF excimer laser (wavelength 248 nm, pulse width 30 ns). The measurement of the reflected He-ne laser shows that the film removal finishes during incident laser pulse. Ablated plume images and shadowgraphs of transferring materials show that the velocity of both the top of ablated plume and the transferring materials become faster in increase fo fluence, and that the transferring materials precede the plume. Optimum fluence exists at each film thickness to achieve high size accuracy of Deposited Structure. At lower fluence, the Deposited Structure shows bad feature due to incomplete removal from the support substrate. At higher fluence, the big shock causes the wide range of spread of Deposited Structure when the transferring particles have a collision with the acceptor substrate. At optimum fluence, the high size accuracy of Deposited Structure is achieved as the film-substrate distance is made as short as possible.
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Experimental investigation of laser induced forward transfer process of metal thin films
Applied Surface Science, 2001Co-Authors: Tomokazu Sano, Hirokazu Yamada, Takayuki Nakayama, Isamu MiyamotoAbstract:Abstract Dependence of size accuracy of Deposited Structure on the film–acceptor substrate distance and fluence, and the factors which influence the dependences were investigated. Au and Ni thin films of several tens to hundreds of nanometer thickness Deposited on quartz substrates using ion sputtering deposition were irradiated by single pulse of KrF excimer laser (wavelength: 248 nm, pulse width 30 ns). Changes in the intensity of reflected He–Ne laser from the front and rear sides of the thin films show that film removal finishes during the excimer laser pulse. Plume images and shadowgraphs of transferring materials show that the velocity of both the leading edge of the plume and the transferring materials become faster with increasing fluence, and that the transferring material precedes the plume. At lower fluences, the Deposited Structure shows bad appearance due to incomplete removal from the support substrate. At higher fluences, the big shock causes the wide range of spread of Deposited Structure when the transferring particles have a collision with the acceptor substrate. At optimum fluences, high size accuracy of the Deposited Structure is achieved when the film–substrate distance is made as short as possible.
Nadia Soulmi - One of the best experts on this subject based on the ideXlab platform.
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Sn(TFSI) 2 as Suitable Salt For the Electrodeposition of NanoStructured Cu 6 Sn 5 - Sn Composite obtained on Cu electrode in Ionic Liquid
Inorganic Chemistry Frontiers, 2019Co-Authors: Nadia Soulmi, Ana-gabriela Porras-gutierrez, Natalia Mordvinova, Oleg Lebedev, Cécile Rizzi, Juliette Sirieix-plenet, Frédéric Lantelme, Henri Groult, Damien Dambournet, Laurent GaillonAbstract:The preparation of binder and carbon-free electrodes is of great interest owing to higher energy density. In this scope, electrodeposition is a suitable method that can be easily scale up providing that suitable chemical reactants are used. In this work, we used highly soluble Sn precursor based on TFSI counter ion dissolved in [EMIm + ][TFSI-] ionic liquid. The use of similar anionic groups in both Sn precursor and solvent allowed to avoid impurities typically encoureted when using Sn chloride precursor. The resulting solution was characterized by cyclic voltametry using either inert (Mo) and reactive substrate (Cu). In both cases, the electrodeposition occured in a diffusion controlled process. In the case of Cu, however, a Cu-Sn alloy that is η-Cu6Sn5 phase was identified. A FIB cross section revealed that Cu and Sn interdiffused and that no epitaxial growth occured. Prolonging the electrodeposition time favored the formation of β-Sn because Cu could no longer diffuse within the Deposited Structure. This resulted in a mixed β-Sn/η-Cu6Sn5 composite whose proportions depended on the deposition duration time. The Deposited samples were directly assembled in lithium coin cells to characterize the capacity and cyclability of binder and carbon-free electrodes. Increasing the mass of Deposited sample degraded the capacity and reversility of the system which was explained by a lower ability to accommodate the volume variation occurring during the electrochemical lithiation/delithiation process.
Takayuki Nakayama - One of the best experts on this subject based on the ideXlab platform.
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Laser-induced rear ablation of metal thin films
Second International Symposium on Laser Precision Microfabrication, 2002Co-Authors: Tomokazu Sano, Hirokazu Yamada, Takayuki Nakayama, Isamu MiyamotoAbstract:The purpose of this study is to investigate the correlation between Laser Induced Forward Transfer (LIFT) process observed experimentally and the Deposited Structure, especially the size accuracy. Ablated plume and shadowgraph of transferring materials were observed using image intensified CCD camera. The intensity of reflected He-Ne laser from the front and rear side of thin films, respectively, were measured using photodiode to investigate the behavior of thin film during laser pulse. Metal thin films (Au and Ni), with several tens - hundreds of nanometer in thickness Deposited on quartz substrate using ion sputtering deposition method, were irradiated by KrF excimer laser (wavelength 248 nm, pulse width 30 ns). The measurement of the reflected He-ne laser shows that the film removal finishes during incident laser pulse. Ablated plume images and shadowgraphs of transferring materials show that the velocity of both the top of ablated plume and the transferring materials become faster in increase fo fluence, and that the transferring materials precede the plume. Optimum fluence exists at each film thickness to achieve high size accuracy of Deposited Structure. At lower fluence, the Deposited Structure shows bad feature due to incomplete removal from the support substrate. At higher fluence, the big shock causes the wide range of spread of Deposited Structure when the transferring particles have a collision with the acceptor substrate. At optimum fluence, the high size accuracy of Deposited Structure is achieved as the film-substrate distance is made as short as possible.
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Experimental investigation of laser induced forward transfer process of metal thin films
Applied Surface Science, 2001Co-Authors: Tomokazu Sano, Hirokazu Yamada, Takayuki Nakayama, Isamu MiyamotoAbstract:Abstract Dependence of size accuracy of Deposited Structure on the film–acceptor substrate distance and fluence, and the factors which influence the dependences were investigated. Au and Ni thin films of several tens to hundreds of nanometer thickness Deposited on quartz substrates using ion sputtering deposition were irradiated by single pulse of KrF excimer laser (wavelength: 248 nm, pulse width 30 ns). Changes in the intensity of reflected He–Ne laser from the front and rear sides of the thin films show that film removal finishes during the excimer laser pulse. Plume images and shadowgraphs of transferring materials show that the velocity of both the leading edge of the plume and the transferring materials become faster with increasing fluence, and that the transferring material precedes the plume. At lower fluences, the Deposited Structure shows bad appearance due to incomplete removal from the support substrate. At higher fluences, the big shock causes the wide range of spread of Deposited Structure when the transferring particles have a collision with the acceptor substrate. At optimum fluences, high size accuracy of the Deposited Structure is achieved when the film–substrate distance is made as short as possible.