The Experts below are selected from a list of 297 Experts worldwide ranked by ideXlab platform
Friedhelm Finger - One of the best experts on this subject based on the ideXlab platform.
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structure adjustment during high Deposition Rate growth of microcrystalline silicon solar cells
Applied Physics Letters, 2004Co-Authors: Y. Mai, Stefan Klein, Xinhua Geng, Friedhelm FingerAbstract:Preparation of microcrystalline silicon for solar cell applications is investigated under high-pressure, high-power conditions with plasma-enhanced chemical vapor Deposition at 95MHz. It is found that the Deposition Rate depends mainly on the amount of silane in the reaction zone. Changes in the discharge power affect the Deposition Rate very little. This points to silane depletion under these process conditions. The amount of H radicals, on the other hand, increases with increasing discharge power and leads to structure changes of the material. Making use of this effect, optimum phase mixture material at the transition from highly crystalline to amorphous growth can be deposited at considerably higher Deposition Rates without loss in solar cell performance.
Y. Mai - One of the best experts on this subject based on the ideXlab platform.
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structure adjustment during high Deposition Rate growth of microcrystalline silicon solar cells
Applied Physics Letters, 2004Co-Authors: Y. Mai, Stefan Klein, Xinhua Geng, Friedhelm FingerAbstract:Preparation of microcrystalline silicon for solar cell applications is investigated under high-pressure, high-power conditions with plasma-enhanced chemical vapor Deposition at 95MHz. It is found that the Deposition Rate depends mainly on the amount of silane in the reaction zone. Changes in the discharge power affect the Deposition Rate very little. This points to silane depletion under these process conditions. The amount of H radicals, on the other hand, increases with increasing discharge power and leads to structure changes of the material. Making use of this effect, optimum phase mixture material at the transition from highly crystalline to amorphous growth can be deposited at considerably higher Deposition Rates without loss in solar cell performance.
Stefan Klein - One of the best experts on this subject based on the ideXlab platform.
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structure adjustment during high Deposition Rate growth of microcrystalline silicon solar cells
Applied Physics Letters, 2004Co-Authors: Y. Mai, Stefan Klein, Xinhua Geng, Friedhelm FingerAbstract:Preparation of microcrystalline silicon for solar cell applications is investigated under high-pressure, high-power conditions with plasma-enhanced chemical vapor Deposition at 95MHz. It is found that the Deposition Rate depends mainly on the amount of silane in the reaction zone. Changes in the discharge power affect the Deposition Rate very little. This points to silane depletion under these process conditions. The amount of H radicals, on the other hand, increases with increasing discharge power and leads to structure changes of the material. Making use of this effect, optimum phase mixture material at the transition from highly crystalline to amorphous growth can be deposited at considerably higher Deposition Rates without loss in solar cell performance.
Xinhua Geng - One of the best experts on this subject based on the ideXlab platform.
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structure adjustment during high Deposition Rate growth of microcrystalline silicon solar cells
Applied Physics Letters, 2004Co-Authors: Y. Mai, Stefan Klein, Xinhua Geng, Friedhelm FingerAbstract:Preparation of microcrystalline silicon for solar cell applications is investigated under high-pressure, high-power conditions with plasma-enhanced chemical vapor Deposition at 95MHz. It is found that the Deposition Rate depends mainly on the amount of silane in the reaction zone. Changes in the discharge power affect the Deposition Rate very little. This points to silane depletion under these process conditions. The amount of H radicals, on the other hand, increases with increasing discharge power and leads to structure changes of the material. Making use of this effect, optimum phase mixture material at the transition from highly crystalline to amorphous growth can be deposited at considerably higher Deposition Rates without loss in solar cell performance.
Frans Spaepen - One of the best experts on this subject based on the ideXlab platform.
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The effect of Deposition Rate on the intrinsic stress in copper and silver thin films
Journal of Applied Physics, 2007Co-Authors: A. Del Vecchio, Frans SpaepenAbstract:The effect of changing the Deposition Rate on the development of stress in evapoRated copper and silver thin films deposited on oxidized silicon was examined. In situ stress measurements were made during Deposition in ultrahigh vacuum using a scanning laser curvature system. In some experiments, the Deposition Rate was alternated without interruption of Deposition. For copper thin films, a change in Deposition Rate has no effect on the development of the tensile stress, while the magnitude of the postcoalescence compressive stress decreases with increasing Deposition Rate. In silver films, the film thickness at the tensile maximum increases slightly with increasing Deposition Rate, while the magnitude of the postcoalescence compressive stress again decreases with increasing Deposition Rate. Analysis of the heat flow during Deposition shows that the radiative heating and condensation contribute roughly equally to the temperature rise of the sample.