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Jiro Matsuo - One of the best experts on this subject based on the ideXlab platform.
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the effect of incident energy on molecular Depth Profiling of polymers with large ar cluster ion beams
Surface and Interface Analysis, 2011Co-Authors: Satoshi Ninomiya, Kazuya Ichiki, Yoshihiko Nakata, Hideaki Yamada, Takaaki Aoki, Toshio Seki, Jiro MatsuoAbstract:In this study, we evaluated the damage caused by large Ar cluster ion irradiation on polymeric materials, and demonstrated a technique for molecular Depth Profiling of polymer films. The surface chemical states of the polymers were analyzed with XPS. The chemical states of the polymethyl methacrylate (PMMA) sample etched with Ar monomer ion beams differed significantly from those of the unirradiated sample, but were preserved for the sample etched with Ar cluster ion beams. SIMS Depth Profiling of the PMMA and polystyrene (PS) films were also carried out by using large Ar cluster ion beams at incident energies between 5.5 and 13 keV, and the effects of incident energy on damage accumulation and Depth resolution were investigated. The ratios of the signal intensity at zero fluence to the signal intensity at steady state decreased with increasing incident energy, whereas the Depth resolution was little affected by incident energy. Copyright © 2010 John Wiley & Sons, Ltd.
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sims with highly excited primary beams for molecular Depth Profiling and imaging of organic and biological materials
Surface and Interface Analysis, 2010Co-Authors: Jiro Matsuo, Kazuya Ichiki, Hideaki Yamada, Toshio Seki, Satoshi Ninomiya, Yoshinobu Wakamatsu, Masaki Hada, Takaaki AokiAbstract:Recent developments in SIMS with both Ar cluster ions and swift heavy ions are presented. With these primary beams, the analysis of organic semiconductors and animal cells shows that one of the key factors to realizing the SIMS analysis of organic materials is high-energy deposition near the surface. Molecular Depth Profiling and images of organic materials were demonstrated by using SIMS.
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organic Depth Profiling of a nanostructured delta layer reference material using large argon cluster ions
Analytical Chemistry, 2010Co-Authors: J L S Lee, Jiro Matsuo, Satoshi Ninomiya, I S Gilmore, M P Seah, A G ShardAbstract:Cluster ion beams have revolutionized the analysis of organic surfaces in time-of-flight secondary ion mass spectrometry and opened up new capabilities for organic Depth Profiling. Much effort has been devoted to understanding the capabilities and improving the performance of SF(5)(+) and C(60)(n+), which are successful for many, but not all, organic materials. Here, we explore the potential of organic Depth Profiling using novel argon cluster ions, Ar(500)(+) to Ar(1000)(+). We present results for an organic delta layer reference sample, consisting of ultrathin "delta" layers of Irganox 3114 (approximately 2.4 nm) embedded between thick layers of Irganox 1010 (approximately 46 or 91 nm). This indicates that, for the reference material, major benefits can be obtained with Ar cluster ions, including a constant high sputtering yield throughout a Depth of approximately 390 nm, and an extremely low sputter-induced roughness of <5 nm. Although the Depth resolution is currently limited by an instrumental artifact, and may not be the best attainable, these initial results strongly indicate the potential to achieve high Depth resolution and suggest that Ar cluster ions may have a major role to play in the Depth Profiling of organic materials.
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organic Depth Profiling of a nanostructured delta layer reference material using large argon cluster ions
Analytical Chemistry, 2010Co-Authors: Satoshi Ninomiya, Jiro Matsuo, I S Gilmore, M P Seah, A G ShardAbstract:Cluster ion beams have revolutionized the analysis of organic surfaces in time-of-flight secondary ion mass spectrometry and opened up new capabilities for organic Depth Profiling. Much effort has been devoted to understanding the capabilities and improving the performance of SF5+ and C60n+, which are successful for many, but not all, organic materials. Here, we explore the potential of organic Depth Profiling using novel argon cluster ions, Ar500+ to Ar1000+. We present results for an organic delta layer reference sample, consisting of ultrathin “delta” layers of Irganox 3114 (∼2.4 nm) embedded between thick layers of Irganox 1010 (∼46 or 91 nm). This indicates that, for the reference material, major benefits can be obtained with Ar cluster ions, including a constant high sputtering yield throughout a Depth of ∼390 nm, and an extremely low sputter-induced roughness of <5 nm. Although the Depth resolution is currently limited by an instrumental artifact, and may not be the best attainable, these initial r...
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molecular Depth Profiling of multilayer structures of organic semiconductor materials by secondary ion mass spectrometry with large argon cluster ion beams
Rapid Communications in Mass Spectrometry, 2009Co-Authors: Satoshi Ninomiya, Kazuya Ichiki, Yoshihiko Nakata, Hideaki Yamada, Takaaki Aoki, Toshio Seki, Jiro MatsuoAbstract:In this study, we present molecular Depth Profiling of multilayer structures composed of organic semiconductor materials such as tris(8-hydroxyquinoline)aluminum (Alq3) and 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (NPD). Molecular ions produced from Alq3 and NPD were measured by linear-type time-of-flight (TOF) mass spectrometry under 5.5 keV Ar700 ion bombardment. The organic multilayer films were analyzed and etched with large Ar cluster ion beams, and the interfaces between the organic layers were clearly distinguished. The effect of temperature on the diffusion of these materials was also investigated by the Depth Profiling analysis with Ar cluster ion beams. The thermal diffusion behavior was found to depend on the specific materials, and the diffusion of Alq3 molecules was observed to start at a lower temperature than that of NPD molecules. These results prove the great potential of large gas cluster ion beams for molecular Depth Profiling of organic multilayer samples. Copyright © 2009 John Wiley & Sons, Ltd.
Satoshi Ninomiya - One of the best experts on this subject based on the ideXlab platform.
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the effect of incident energy on molecular Depth Profiling of polymers with large ar cluster ion beams
Surface and Interface Analysis, 2011Co-Authors: Satoshi Ninomiya, Kazuya Ichiki, Yoshihiko Nakata, Hideaki Yamada, Takaaki Aoki, Toshio Seki, Jiro MatsuoAbstract:In this study, we evaluated the damage caused by large Ar cluster ion irradiation on polymeric materials, and demonstrated a technique for molecular Depth Profiling of polymer films. The surface chemical states of the polymers were analyzed with XPS. The chemical states of the polymethyl methacrylate (PMMA) sample etched with Ar monomer ion beams differed significantly from those of the unirradiated sample, but were preserved for the sample etched with Ar cluster ion beams. SIMS Depth Profiling of the PMMA and polystyrene (PS) films were also carried out by using large Ar cluster ion beams at incident energies between 5.5 and 13 keV, and the effects of incident energy on damage accumulation and Depth resolution were investigated. The ratios of the signal intensity at zero fluence to the signal intensity at steady state decreased with increasing incident energy, whereas the Depth resolution was little affected by incident energy. Copyright © 2010 John Wiley & Sons, Ltd.
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sims with highly excited primary beams for molecular Depth Profiling and imaging of organic and biological materials
Surface and Interface Analysis, 2010Co-Authors: Jiro Matsuo, Kazuya Ichiki, Hideaki Yamada, Toshio Seki, Satoshi Ninomiya, Yoshinobu Wakamatsu, Masaki Hada, Takaaki AokiAbstract:Recent developments in SIMS with both Ar cluster ions and swift heavy ions are presented. With these primary beams, the analysis of organic semiconductors and animal cells shows that one of the key factors to realizing the SIMS analysis of organic materials is high-energy deposition near the surface. Molecular Depth Profiling and images of organic materials were demonstrated by using SIMS.
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organic Depth Profiling of a nanostructured delta layer reference material using large argon cluster ions
Analytical Chemistry, 2010Co-Authors: J L S Lee, Jiro Matsuo, Satoshi Ninomiya, I S Gilmore, M P Seah, A G ShardAbstract:Cluster ion beams have revolutionized the analysis of organic surfaces in time-of-flight secondary ion mass spectrometry and opened up new capabilities for organic Depth Profiling. Much effort has been devoted to understanding the capabilities and improving the performance of SF(5)(+) and C(60)(n+), which are successful for many, but not all, organic materials. Here, we explore the potential of organic Depth Profiling using novel argon cluster ions, Ar(500)(+) to Ar(1000)(+). We present results for an organic delta layer reference sample, consisting of ultrathin "delta" layers of Irganox 3114 (approximately 2.4 nm) embedded between thick layers of Irganox 1010 (approximately 46 or 91 nm). This indicates that, for the reference material, major benefits can be obtained with Ar cluster ions, including a constant high sputtering yield throughout a Depth of approximately 390 nm, and an extremely low sputter-induced roughness of <5 nm. Although the Depth resolution is currently limited by an instrumental artifact, and may not be the best attainable, these initial results strongly indicate the potential to achieve high Depth resolution and suggest that Ar cluster ions may have a major role to play in the Depth Profiling of organic materials.
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organic Depth Profiling of a nanostructured delta layer reference material using large argon cluster ions
Analytical Chemistry, 2010Co-Authors: Satoshi Ninomiya, Jiro Matsuo, I S Gilmore, M P Seah, A G ShardAbstract:Cluster ion beams have revolutionized the analysis of organic surfaces in time-of-flight secondary ion mass spectrometry and opened up new capabilities for organic Depth Profiling. Much effort has been devoted to understanding the capabilities and improving the performance of SF5+ and C60n+, which are successful for many, but not all, organic materials. Here, we explore the potential of organic Depth Profiling using novel argon cluster ions, Ar500+ to Ar1000+. We present results for an organic delta layer reference sample, consisting of ultrathin “delta” layers of Irganox 3114 (∼2.4 nm) embedded between thick layers of Irganox 1010 (∼46 or 91 nm). This indicates that, for the reference material, major benefits can be obtained with Ar cluster ions, including a constant high sputtering yield throughout a Depth of ∼390 nm, and an extremely low sputter-induced roughness of <5 nm. Although the Depth resolution is currently limited by an instrumental artifact, and may not be the best attainable, these initial r...
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molecular Depth Profiling of multilayer structures of organic semiconductor materials by secondary ion mass spectrometry with large argon cluster ion beams
Rapid Communications in Mass Spectrometry, 2009Co-Authors: Satoshi Ninomiya, Kazuya Ichiki, Yoshihiko Nakata, Hideaki Yamada, Takaaki Aoki, Toshio Seki, Jiro MatsuoAbstract:In this study, we present molecular Depth Profiling of multilayer structures composed of organic semiconductor materials such as tris(8-hydroxyquinoline)aluminum (Alq3) and 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (NPD). Molecular ions produced from Alq3 and NPD were measured by linear-type time-of-flight (TOF) mass spectrometry under 5.5 keV Ar700 ion bombardment. The organic multilayer films were analyzed and etched with large Ar cluster ion beams, and the interfaces between the organic layers were clearly distinguished. The effect of temperature on the diffusion of these materials was also investigated by the Depth Profiling analysis with Ar cluster ion beams. The thermal diffusion behavior was found to depend on the specific materials, and the diffusion of Alq3 molecules was observed to start at a lower temperature than that of NPD molecules. These results prove the great potential of large gas cluster ion beams for molecular Depth Profiling of organic multilayer samples. Copyright © 2009 John Wiley & Sons, Ltd.
A G Shard - One of the best experts on this subject based on the ideXlab platform.
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organic Depth Profiling of a nanostructured delta layer reference material using large argon cluster ions
Analytical Chemistry, 2010Co-Authors: J L S Lee, Jiro Matsuo, Satoshi Ninomiya, I S Gilmore, M P Seah, A G ShardAbstract:Cluster ion beams have revolutionized the analysis of organic surfaces in time-of-flight secondary ion mass spectrometry and opened up new capabilities for organic Depth Profiling. Much effort has been devoted to understanding the capabilities and improving the performance of SF(5)(+) and C(60)(n+), which are successful for many, but not all, organic materials. Here, we explore the potential of organic Depth Profiling using novel argon cluster ions, Ar(500)(+) to Ar(1000)(+). We present results for an organic delta layer reference sample, consisting of ultrathin "delta" layers of Irganox 3114 (approximately 2.4 nm) embedded between thick layers of Irganox 1010 (approximately 46 or 91 nm). This indicates that, for the reference material, major benefits can be obtained with Ar cluster ions, including a constant high sputtering yield throughout a Depth of approximately 390 nm, and an extremely low sputter-induced roughness of <5 nm. Although the Depth resolution is currently limited by an instrumental artifact, and may not be the best attainable, these initial results strongly indicate the potential to achieve high Depth resolution and suggest that Ar cluster ions may have a major role to play in the Depth Profiling of organic materials.
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organic Depth Profiling of a nanostructured delta layer reference material using large argon cluster ions
Analytical Chemistry, 2010Co-Authors: Satoshi Ninomiya, Jiro Matsuo, I S Gilmore, M P Seah, A G ShardAbstract:Cluster ion beams have revolutionized the analysis of organic surfaces in time-of-flight secondary ion mass spectrometry and opened up new capabilities for organic Depth Profiling. Much effort has been devoted to understanding the capabilities and improving the performance of SF5+ and C60n+, which are successful for many, but not all, organic materials. Here, we explore the potential of organic Depth Profiling using novel argon cluster ions, Ar500+ to Ar1000+. We present results for an organic delta layer reference sample, consisting of ultrathin “delta” layers of Irganox 3114 (∼2.4 nm) embedded between thick layers of Irganox 1010 (∼46 or 91 nm). This indicates that, for the reference material, major benefits can be obtained with Ar cluster ions, including a constant high sputtering yield throughout a Depth of ∼390 nm, and an extremely low sputter-induced roughness of <5 nm. Although the Depth resolution is currently limited by an instrumental artifact, and may not be the best attainable, these initial r...
Nicholas Winograd - One of the best experts on this subject based on the ideXlab platform.
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Molecular Depth Profiling with cluster beams
2020Co-Authors: Juan Cheng, Andreas Wucher, Nicholas WinogradAbstract:Peptide-doped trehalose thin films have been characterized by bombardment with energetic cluster ion beams of C 60 + and Au x + (x ) 1, 2, 3). The aim of these studies is to acquire information about the molecular sputtering process of the peptide and trehalose by measurement of secondary ion mass spectra during erosion. This system is important since uniform thin films of ∼300 nm thickness can be reproducibly prepared on a Si substrate, allowing detailed characterization of the resulting Depth profile with different projectiles. The basic form of the molecular ion intensity as a function of ion dose is described by a simple analytical model. The model includes parameters such as the molecular sputtering yield, the damage cross section of the trehalose or the peptide, and the thickness of a surface layer altered by the projectile. The results show that favorable conditions for successful molecular Depth Profiling are achieved when the total sputtering yield is high and the altered layer thickness is low. Successful molecular Depth profiles are achieved with all of the cluster projectiles, although the degree of chemical damage accumulation was slightly lower with C 60 . With C 60 bombardment, the altered layer thickness of about 20 nm and the damage cross section of about 5 nm 2 are physically consistent with predictions of molecular dynamics calculations available for similar chemical systems. In general, the model presented should provide guidance in optimizing experimental parameters for maximizing the information content of molecular Depth Profiling experiments with complex molecular thin film substrates
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Molecular Depth Profiling with Argon Gas Cluster Ion Beams
The Journal of Physical Chemistry C, 2015Co-Authors: Kan Shen, Andreas Wucher, Nicholas WinogradAbstract:Argon gas cluster ion beams (Ar-GCIBs) are remarkable new projectiles for secondary ion mass spectrometry (SIMS) Depth Profiling of organic materials. However, the optimal cluster size and kinetic energy to provide the best quality of Depth profiles, in terms of high ionization efficiency of the target molecules, little chemical damage, and short experiment time, for organic materials is not fully understood. Hence, the effect of cluster size and kinetic energy on the quality of molecular Depth Profiling is investigated on a simple platform composed of trehalose thin films to acquire more fundamental information about the ion/solid interaction. The results suggest that the sputter yield (Y/n) of argon clusters is linearly dependent upon kinetic energy per atom (E/n). When E/n > 5 eV/atom, normal Depth profiles are obtained with relatively high sputter yields. When E/n ≤ 5 eV/atom, however, distorted Depth profiles in the steady state region are observed, which exhibit a low sputter yield and variable ioni...
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Molecular Depth Profiling
Surface and Interface Analysis, 2012Co-Authors: Nicholas WinogradAbstract:To start, it is appropriate to reflect on the wonderful venue and the hospitality of our hosts for the SIMS XVIII conference here in Riva del Garda. The scenery has been spectacular, the food and wine of culinary delight, and the science inspirational indeed. All the attendees owe a warm thanks to the terrific job of the local organizing committees in providing a great treat for everyone. There can be no better occasion than to celebrate the 101st anniversary (1) of the discovery of secondary ion mass spectrometry with this group. The subject of this paper is molecular Depth Profiling. It is a fascinating topic for our lab since it is a subject that is quite new in the scheme of the 100 year history of SIMS. As is well known, atomic bombardment of molecular solids rapidly leads to chemical damage with the concomitant loss of chemical information as the fluence exceeds the static limit. With cluster bombardment, however, this damage is mitigated in some cases, and even eliminated completely in others, allowing erosion of the material without loss of chemical information. In this lecture, some of the critical issues will be reviewed, along with a discussion of various protocols that are becoming available to characterize the effectiveness of a Depth profile. The goal will be to decide what makes it, what breaks it, and what fixes it. There are many valuable resources available to supplement this discussion, in addition to these proceedings. Of particular note is the SIMS society website, www.simssociety.org, which is being developed by the community for use by the community. The site has links to other SIMS activities, job opportunities and PowerPoint presentations from a number of review-type lectures, including this one. The SIMS International Committee encourages contributions to this site, which can be arranged through any committee member. It is fortunate that many of the issues associated with molecular Depth Profiling have already been addressed quite rigorously by the dynamic SIMS community over the last 30 years or so. These experiments have been focused on determining elemental dopant distributions very near the surface of semiconductors such as Si, and on characterizing structures ranging from epitaxial layers to quantum wells. Extending these approaches to molecular Depth Profiling opens more opportunities for applications of SIMS since the study of buried interfaces in molecular solids with nanometer Depth resolution is virtually impossible with other techniques. Key applications so far appear most promising in organic electronics through the study of organic light emitting diodes (OLED's), optoelectronic materials (2), photovoltaics and multilayer polymer structures with a number of examples found in these proceedings. There are also opportunities in the pharmaceutical industry, where formulation of drugs into complex layered structures is now standard practice. Beyond these applications, there are also important implications for chemical imaging. In a 1 μm2 pixel, there are ~106 molecules per pixel, depending upon molecule size, of course. For static SIMS, the damage threshold is ~1%, the instrument transmission is ~10%, and the ionization efficiency for typical organic molecules is ~0.01%. Hence, the maximum signal in imaging mode is on the order of 0.1 counts per pixel, not too impressive. If the static limit no longer applies, and the pixel can be integrated to a voxel, the count rate increases by a factor of 105, opening many new possibilities. In fact, the combination of molecular Depth Profiling with 2-dimensional imaging to create a 3-dimensional rendering of the chemistry is clearly a future growth area for our field. Incidentally, if somebody could figure out a way to improve ionization of the target molecules, the count rate could be increased by another 4 orders of magnitude, changing the game yet again. These simple calculations have another important implication. As is clear from papers presented at this conference, and from the discussion to follow, virtually all molecular Depth Profiling experiments are performed using 2 different modes – one where the beam is on continuously to erode the material and one where the beam is pulsed to acquire a ToF SIMS spectrum. This latter approach is clearly inefficient since no mass spectral information is gained during the erosion cycles. It will be critical to design instrumentation going forward that removes this inefficiency if the advantages noted above are to be fully realized.
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Depth Profiling by cluster projectiles as seen by computer simulations
Surface and Interface Analysis, 2011Co-Authors: Z Postawa, Nicholas Winograd, L Rzeznik, Robert J Paruch, Michael F Russo, Barbara J GarrisonAbstract:Molecular dynamics computer simulations are used to probe the development of the surface morphology and the processes that determinethe Depth resolution in Depth Profiling experiments performed by secondary ion and neutral mass spectrometry (SIM5/5NMS). The Ag(111) surface is irradiated by an impact of 20-keV Au 3 , C 60 and Ar 872 clusters that represent a broad range of cluster projectiles used in SIMS/SNMS experiments. Improvements in the simulation protocol including automation and optimal sample shape allow for at least 1000 consecutive impacts for each set of initial conditions. This novel approach allows to shrink the gap between single-impact simulations and real experiments in which numerous impacts are used.
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energy deposition during molecular Depth Profiling experiments with cluster ion beams
Analytical Chemistry, 2008Co-Authors: Joseph Kozole, Andreas Wucher, Nicholas WinogradAbstract:The role of the location of energy deposition during cluster ion bombardment on the quality of molecular Depth Profiling was examined by varying the incident angle geometry. Cholesterol films ∼300 nm in thickness deposited onto silicon substrates were eroded using 40-keV C60+ at incident angles ranging from 5° to 73° with respect to the surface normal. The erosion process was evaluated by determining at each incident angle the total sputtering yield of cholesterol molecules, the damage cross section of the cholesterol molecules, the altered layer thickness within the solid, the sputter yield decay in the quasi-steady-state sputter regime, and the interface width between the cholesterol film and the silicon substrate. The results show that the total sputtering yield is largest relative to the product of the damage cross section and the altered layer thickness at 73° incidence, suggesting that the amount of chemical damage accumulated is least when glancing incident geometries are used. Moreover, the signal...
Toshio Seki - One of the best experts on this subject based on the ideXlab platform.
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the effect of incident energy on molecular Depth Profiling of polymers with large ar cluster ion beams
Surface and Interface Analysis, 2011Co-Authors: Satoshi Ninomiya, Kazuya Ichiki, Yoshihiko Nakata, Hideaki Yamada, Takaaki Aoki, Toshio Seki, Jiro MatsuoAbstract:In this study, we evaluated the damage caused by large Ar cluster ion irradiation on polymeric materials, and demonstrated a technique for molecular Depth Profiling of polymer films. The surface chemical states of the polymers were analyzed with XPS. The chemical states of the polymethyl methacrylate (PMMA) sample etched with Ar monomer ion beams differed significantly from those of the unirradiated sample, but were preserved for the sample etched with Ar cluster ion beams. SIMS Depth Profiling of the PMMA and polystyrene (PS) films were also carried out by using large Ar cluster ion beams at incident energies between 5.5 and 13 keV, and the effects of incident energy on damage accumulation and Depth resolution were investigated. The ratios of the signal intensity at zero fluence to the signal intensity at steady state decreased with increasing incident energy, whereas the Depth resolution was little affected by incident energy. Copyright © 2010 John Wiley & Sons, Ltd.
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sims with highly excited primary beams for molecular Depth Profiling and imaging of organic and biological materials
Surface and Interface Analysis, 2010Co-Authors: Jiro Matsuo, Kazuya Ichiki, Hideaki Yamada, Toshio Seki, Satoshi Ninomiya, Yoshinobu Wakamatsu, Masaki Hada, Takaaki AokiAbstract:Recent developments in SIMS with both Ar cluster ions and swift heavy ions are presented. With these primary beams, the analysis of organic semiconductors and animal cells shows that one of the key factors to realizing the SIMS analysis of organic materials is high-energy deposition near the surface. Molecular Depth Profiling and images of organic materials were demonstrated by using SIMS.
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molecular Depth Profiling of multilayer structures of organic semiconductor materials by secondary ion mass spectrometry with large argon cluster ion beams
Rapid Communications in Mass Spectrometry, 2009Co-Authors: Satoshi Ninomiya, Kazuya Ichiki, Yoshihiko Nakata, Hideaki Yamada, Takaaki Aoki, Toshio Seki, Jiro MatsuoAbstract:In this study, we present molecular Depth Profiling of multilayer structures composed of organic semiconductor materials such as tris(8-hydroxyquinoline)aluminum (Alq3) and 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (NPD). Molecular ions produced from Alq3 and NPD were measured by linear-type time-of-flight (TOF) mass spectrometry under 5.5 keV Ar700 ion bombardment. The organic multilayer films were analyzed and etched with large Ar cluster ion beams, and the interfaces between the organic layers were clearly distinguished. The effect of temperature on the diffusion of these materials was also investigated by the Depth Profiling analysis with Ar cluster ion beams. The thermal diffusion behavior was found to depend on the specific materials, and the diffusion of Alq3 molecules was observed to start at a lower temperature than that of NPD molecules. These results prove the great potential of large gas cluster ion beams for molecular Depth Profiling of organic multilayer samples. Copyright © 2009 John Wiley & Sons, Ltd.
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precise and fast secondary ion mass spectrometry Depth Profiling of polymer materials with large ar cluster ion beams
Rapid Communications in Mass Spectrometry, 2009Co-Authors: Satoshi Ninomiya, Kazuya Ichiki, Yoshihiko Nakata, Hideaki Yamada, Takaaki Aoki, Toshio Seki, Jiro MatsuoAbstract:We demonstrate Depth Profiling of polymer materials by using large argon (Ar) cluster ion beams. In general, Depth Profiling with secondary ion mass spectrometry (SIMS) presents serious problems in organic materials, because the primary keV atomic ion beams often damage them and the molecular ion yields decrease with increasing incident ion fluence. Recently, we have found reduced damage of organic materials during sputtering with large gas cluster ions, and reported on the unique secondary ion emission of organic materials. Secondary ions from the polymer films were measured with a linear type time-of-flight (TOF) technique; the films were also etched with large Ar cluster ion beams. The mean cluster size of the primary ion beams was Ar700 and incident energy was 5.5 keV. Although the primary ion fluence exceeded the static SIMS limit, the molecular ion intensities from the polymer films remained constant, indicating that irradiation with large Ar cluster ion beams rarely leads to damage accumulation on the surface of the films, and this characteristic is excellently suitable for SIMS Depth Profiling of organic materials. Copyright © 2009 John Wiley & Sons, Ltd.
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precise and fast secondary ion mass spectrometry Depth Profiling of polymer materials with large ar cluster ion beams
Rapid Communications in Mass Spectrometry, 2009Co-Authors: Satoshi Ninomiya, Kazuya Ichiki, Yoshihiko Nakata, Hideaki Yamada, Takaaki Aoki, Toshio Seki, Jiro MatsuoAbstract:We demonstrate Depth Profiling of polymer materials by using large argon (Ar) cluster ion beams. In general, Depth Profiling with secondary ion mass spectrometry (SIMS) presents serious problems in organic materials, because the primary keV atomic ion beams often damage them and the molecular ion yields decrease with increasing incident ion fluence. Recently, we have found reduced damage of organic materials during sputtering with large gas cluster ions, and reported on the unique secondary ion emission of organic materials. Secondary ions from the polymer films were measured with a linear type time-of-flight (TOF) technique; the films were also etched with large Ar cluster ion beams. The mean cluster size of the primary ion beams was Ar 700 and incident energy was 5.5 keV. Although the primary ion fluence exceeded the static SIMS limit, the molecular ion intensities from the polymer films remained constant, indicating that irradiation with large Ar cluster ion beams rarely leads to damage accumulation on the surface of the films, and this characteristic is excellently suitable for SIMS Depth Profiling of organic materials.