The Experts below are selected from a list of 25968 Experts worldwide ranked by ideXlab platform

Van Beek S. - One of the best experts on this subject based on the ideXlab platform.

  • Voltage-Gate Assisted Spin-Orbit Torque Magnetic Random Access Memory for High-Density and Low-Power Embedded Application
    'American Physical Society (APS)', 2021
    Co-Authors: Wu Y. C., Garello K., Kim W., Gupta M., Perumkunnil M., Couet S., Carpenter R., Rao S., Van Beek S.
    Abstract:

    Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory (MRAM) applications. In this work, we give a complete description of VGSOT writing properties on perpendicular magnetic tunnel junction (pMTJ) Devices, and we propose a detailed methodology for its electrical characterization. The impact of gate assistance on the SOT switching characteristics are investigated using electrical pulses down to 400ps. The VCMA coefficient ({\xi}) extracted from current switching scheme is found to be the same as that from the magnetic field switch method, which is in the order of 15fJ/Vm for the 80nm to 150nm Devices. Moreover, as expected from the pure electronic VCMA effect, {\xi} is revealed to be independent of the writing speed and gate length. We observe that SOT switching current characteristics are modified linearly with gate voltage (V_g), similar as for the magnetic properties. We interpret this linear behavior as the direct modification of perpendicular magnetic anisotropy (PMA) and nucleation energy induced by VCMA. At V_g = 1V, the SOT write current is decreased by 25%, corresponding to a 45% reduction in total energy down to 30fJ/bit at 400ps speed for the 80nm Devices used in this study. Further, the Device-Scaling criteria are proposed, and we reveal that VGSOT scheme is of great interest as it can mitigate the complex material requirements of achieving high SOT and VCMA parameters for scaled MTJs. Finally, how that VGSOT-MRAM can enable high-density arrays close to two terminal geometries, with high-speed performance and low-power operation, showing great potential for embedded memories as well as in-memory computing applications at advanced technology nodes

  • Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications
    'American Physical Society (APS)', 2021
    Co-Authors: Wu Y.c., Kim W., Gupta M., Perumkunnil M., Couet S., Carpenter R., Rao S., Garello Kevin, Van Beek S.
    Abstract:

    International audienceThe voltage-gate-assisted spin-orbit-torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit-torque (SOT) effects, enabling multiple benefits for magnetic random-access-memory (MRAM) applications. In this work, we give a complete description of the VGSOT writing properties on perpendicular magnetic tunnel junction (PMTJ) Devices, and we propose a detailed methodology for their electrical characterization. The impact of gate assistance on the SOT switching characteristics is investigated using electrical pulses down to 400 ps. The VCMA coefficient (ξ) extracted from the current-switching scheme is found to be the same as that from the magnetic-field-switch method, which is in the order of 15 fJ/Vm for 80-150-nm Devices. Moreover, as expected from the pure electronic VCMA effect, ξ is revealed to be independent of the writing speed and gate length. We observe that SOT switching current characteristics are modified linearly with gate voltage (V g), similar to that for the magnetic properties. We interpret this linear behavior as the direct modification of perpendicular magnetic anisotropy induced by VCMA. At V g = 1 V, the SOT write current is decreased by 25%, corresponding to a 45% reduction in total energy down to 30 fJ/bit at 400 ps speed for the 80-nm Devices used in this study. To test the operation reliability, we investigate the gate-SOT pulse configurations and overlays, and we find that an extended gate duration is able to preserve maximized gate benefit and selectivity. Furthermore, the Device-Scaling criteria are proposed, and we reveal that the VGSOT scheme is of great interest, as it can mitigate the complex material requirements of achieving high SOT and VCMA parameters for scaled MTJs. Finally, we perform design-to-technology co-optimization analysis to show that VGSOT MRAM can enable high-density arrays close to two-terminal geometries, with high-speed performance and low-power operation, showing great potential for embedded memories as well as in memory computing applications at advanced technology nodes

Gupta M. - One of the best experts on this subject based on the ideXlab platform.

  • Voltage-Gate Assisted Spin-Orbit Torque Magnetic Random Access Memory for High-Density and Low-Power Embedded Application
    'American Physical Society (APS)', 2021
    Co-Authors: Wu Y. C., Garello K., Kim W., Gupta M., Perumkunnil M., Couet S., Carpenter R., Rao S., Van Beek S.
    Abstract:

    Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory (MRAM) applications. In this work, we give a complete description of VGSOT writing properties on perpendicular magnetic tunnel junction (pMTJ) Devices, and we propose a detailed methodology for its electrical characterization. The impact of gate assistance on the SOT switching characteristics are investigated using electrical pulses down to 400ps. The VCMA coefficient ({\xi}) extracted from current switching scheme is found to be the same as that from the magnetic field switch method, which is in the order of 15fJ/Vm for the 80nm to 150nm Devices. Moreover, as expected from the pure electronic VCMA effect, {\xi} is revealed to be independent of the writing speed and gate length. We observe that SOT switching current characteristics are modified linearly with gate voltage (V_g), similar as for the magnetic properties. We interpret this linear behavior as the direct modification of perpendicular magnetic anisotropy (PMA) and nucleation energy induced by VCMA. At V_g = 1V, the SOT write current is decreased by 25%, corresponding to a 45% reduction in total energy down to 30fJ/bit at 400ps speed for the 80nm Devices used in this study. Further, the Device-Scaling criteria are proposed, and we reveal that VGSOT scheme is of great interest as it can mitigate the complex material requirements of achieving high SOT and VCMA parameters for scaled MTJs. Finally, how that VGSOT-MRAM can enable high-density arrays close to two terminal geometries, with high-speed performance and low-power operation, showing great potential for embedded memories as well as in-memory computing applications at advanced technology nodes

  • Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications
    'American Physical Society (APS)', 2021
    Co-Authors: Wu Y.c., Kim W., Gupta M., Perumkunnil M., Couet S., Carpenter R., Rao S., Garello Kevin, Van Beek S.
    Abstract:

    International audienceThe voltage-gate-assisted spin-orbit-torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit-torque (SOT) effects, enabling multiple benefits for magnetic random-access-memory (MRAM) applications. In this work, we give a complete description of the VGSOT writing properties on perpendicular magnetic tunnel junction (PMTJ) Devices, and we propose a detailed methodology for their electrical characterization. The impact of gate assistance on the SOT switching characteristics is investigated using electrical pulses down to 400 ps. The VCMA coefficient (ξ) extracted from the current-switching scheme is found to be the same as that from the magnetic-field-switch method, which is in the order of 15 fJ/Vm for 80-150-nm Devices. Moreover, as expected from the pure electronic VCMA effect, ξ is revealed to be independent of the writing speed and gate length. We observe that SOT switching current characteristics are modified linearly with gate voltage (V g), similar to that for the magnetic properties. We interpret this linear behavior as the direct modification of perpendicular magnetic anisotropy induced by VCMA. At V g = 1 V, the SOT write current is decreased by 25%, corresponding to a 45% reduction in total energy down to 30 fJ/bit at 400 ps speed for the 80-nm Devices used in this study. To test the operation reliability, we investigate the gate-SOT pulse configurations and overlays, and we find that an extended gate duration is able to preserve maximized gate benefit and selectivity. Furthermore, the Device-Scaling criteria are proposed, and we reveal that the VGSOT scheme is of great interest, as it can mitigate the complex material requirements of achieving high SOT and VCMA parameters for scaled MTJs. Finally, we perform design-to-technology co-optimization analysis to show that VGSOT MRAM can enable high-density arrays close to two-terminal geometries, with high-speed performance and low-power operation, showing great potential for embedded memories as well as in memory computing applications at advanced technology nodes

Perumkunnil M. - One of the best experts on this subject based on the ideXlab platform.

  • Voltage-Gate Assisted Spin-Orbit Torque Magnetic Random Access Memory for High-Density and Low-Power Embedded Application
    'American Physical Society (APS)', 2021
    Co-Authors: Wu Y. C., Garello K., Kim W., Gupta M., Perumkunnil M., Couet S., Carpenter R., Rao S., Van Beek S.
    Abstract:

    Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory (MRAM) applications. In this work, we give a complete description of VGSOT writing properties on perpendicular magnetic tunnel junction (pMTJ) Devices, and we propose a detailed methodology for its electrical characterization. The impact of gate assistance on the SOT switching characteristics are investigated using electrical pulses down to 400ps. The VCMA coefficient ({\xi}) extracted from current switching scheme is found to be the same as that from the magnetic field switch method, which is in the order of 15fJ/Vm for the 80nm to 150nm Devices. Moreover, as expected from the pure electronic VCMA effect, {\xi} is revealed to be independent of the writing speed and gate length. We observe that SOT switching current characteristics are modified linearly with gate voltage (V_g), similar as for the magnetic properties. We interpret this linear behavior as the direct modification of perpendicular magnetic anisotropy (PMA) and nucleation energy induced by VCMA. At V_g = 1V, the SOT write current is decreased by 25%, corresponding to a 45% reduction in total energy down to 30fJ/bit at 400ps speed for the 80nm Devices used in this study. Further, the Device-Scaling criteria are proposed, and we reveal that VGSOT scheme is of great interest as it can mitigate the complex material requirements of achieving high SOT and VCMA parameters for scaled MTJs. Finally, how that VGSOT-MRAM can enable high-density arrays close to two terminal geometries, with high-speed performance and low-power operation, showing great potential for embedded memories as well as in-memory computing applications at advanced technology nodes

  • Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications
    'American Physical Society (APS)', 2021
    Co-Authors: Wu Y.c., Kim W., Gupta M., Perumkunnil M., Couet S., Carpenter R., Rao S., Garello Kevin, Van Beek S.
    Abstract:

    International audienceThe voltage-gate-assisted spin-orbit-torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit-torque (SOT) effects, enabling multiple benefits for magnetic random-access-memory (MRAM) applications. In this work, we give a complete description of the VGSOT writing properties on perpendicular magnetic tunnel junction (PMTJ) Devices, and we propose a detailed methodology for their electrical characterization. The impact of gate assistance on the SOT switching characteristics is investigated using electrical pulses down to 400 ps. The VCMA coefficient (ξ) extracted from the current-switching scheme is found to be the same as that from the magnetic-field-switch method, which is in the order of 15 fJ/Vm for 80-150-nm Devices. Moreover, as expected from the pure electronic VCMA effect, ξ is revealed to be independent of the writing speed and gate length. We observe that SOT switching current characteristics are modified linearly with gate voltage (V g), similar to that for the magnetic properties. We interpret this linear behavior as the direct modification of perpendicular magnetic anisotropy induced by VCMA. At V g = 1 V, the SOT write current is decreased by 25%, corresponding to a 45% reduction in total energy down to 30 fJ/bit at 400 ps speed for the 80-nm Devices used in this study. To test the operation reliability, we investigate the gate-SOT pulse configurations and overlays, and we find that an extended gate duration is able to preserve maximized gate benefit and selectivity. Furthermore, the Device-Scaling criteria are proposed, and we reveal that the VGSOT scheme is of great interest, as it can mitigate the complex material requirements of achieving high SOT and VCMA parameters for scaled MTJs. Finally, we perform design-to-technology co-optimization analysis to show that VGSOT MRAM can enable high-density arrays close to two-terminal geometries, with high-speed performance and low-power operation, showing great potential for embedded memories as well as in memory computing applications at advanced technology nodes

Kim W. - One of the best experts on this subject based on the ideXlab platform.

  • Voltage-Gate Assisted Spin-Orbit Torque Magnetic Random Access Memory for High-Density and Low-Power Embedded Application
    'American Physical Society (APS)', 2021
    Co-Authors: Wu Y. C., Garello K., Kim W., Gupta M., Perumkunnil M., Couet S., Carpenter R., Rao S., Van Beek S.
    Abstract:

    Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory (MRAM) applications. In this work, we give a complete description of VGSOT writing properties on perpendicular magnetic tunnel junction (pMTJ) Devices, and we propose a detailed methodology for its electrical characterization. The impact of gate assistance on the SOT switching characteristics are investigated using electrical pulses down to 400ps. The VCMA coefficient ({\xi}) extracted from current switching scheme is found to be the same as that from the magnetic field switch method, which is in the order of 15fJ/Vm for the 80nm to 150nm Devices. Moreover, as expected from the pure electronic VCMA effect, {\xi} is revealed to be independent of the writing speed and gate length. We observe that SOT switching current characteristics are modified linearly with gate voltage (V_g), similar as for the magnetic properties. We interpret this linear behavior as the direct modification of perpendicular magnetic anisotropy (PMA) and nucleation energy induced by VCMA. At V_g = 1V, the SOT write current is decreased by 25%, corresponding to a 45% reduction in total energy down to 30fJ/bit at 400ps speed for the 80nm Devices used in this study. Further, the Device-Scaling criteria are proposed, and we reveal that VGSOT scheme is of great interest as it can mitigate the complex material requirements of achieving high SOT and VCMA parameters for scaled MTJs. Finally, how that VGSOT-MRAM can enable high-density arrays close to two terminal geometries, with high-speed performance and low-power operation, showing great potential for embedded memories as well as in-memory computing applications at advanced technology nodes

  • Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications
    'American Physical Society (APS)', 2021
    Co-Authors: Wu Y.c., Kim W., Gupta M., Perumkunnil M., Couet S., Carpenter R., Rao S., Garello Kevin, Van Beek S.
    Abstract:

    International audienceThe voltage-gate-assisted spin-orbit-torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit-torque (SOT) effects, enabling multiple benefits for magnetic random-access-memory (MRAM) applications. In this work, we give a complete description of the VGSOT writing properties on perpendicular magnetic tunnel junction (PMTJ) Devices, and we propose a detailed methodology for their electrical characterization. The impact of gate assistance on the SOT switching characteristics is investigated using electrical pulses down to 400 ps. The VCMA coefficient (ξ) extracted from the current-switching scheme is found to be the same as that from the magnetic-field-switch method, which is in the order of 15 fJ/Vm for 80-150-nm Devices. Moreover, as expected from the pure electronic VCMA effect, ξ is revealed to be independent of the writing speed and gate length. We observe that SOT switching current characteristics are modified linearly with gate voltage (V g), similar to that for the magnetic properties. We interpret this linear behavior as the direct modification of perpendicular magnetic anisotropy induced by VCMA. At V g = 1 V, the SOT write current is decreased by 25%, corresponding to a 45% reduction in total energy down to 30 fJ/bit at 400 ps speed for the 80-nm Devices used in this study. To test the operation reliability, we investigate the gate-SOT pulse configurations and overlays, and we find that an extended gate duration is able to preserve maximized gate benefit and selectivity. Furthermore, the Device-Scaling criteria are proposed, and we reveal that the VGSOT scheme is of great interest, as it can mitigate the complex material requirements of achieving high SOT and VCMA parameters for scaled MTJs. Finally, we perform design-to-technology co-optimization analysis to show that VGSOT MRAM can enable high-density arrays close to two-terminal geometries, with high-speed performance and low-power operation, showing great potential for embedded memories as well as in memory computing applications at advanced technology nodes

Rao S. - One of the best experts on this subject based on the ideXlab platform.

  • Voltage-Gate Assisted Spin-Orbit Torque Magnetic Random Access Memory for High-Density and Low-Power Embedded Application
    'American Physical Society (APS)', 2021
    Co-Authors: Wu Y. C., Garello K., Kim W., Gupta M., Perumkunnil M., Couet S., Carpenter R., Rao S., Van Beek S.
    Abstract:

    Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory (MRAM) applications. In this work, we give a complete description of VGSOT writing properties on perpendicular magnetic tunnel junction (pMTJ) Devices, and we propose a detailed methodology for its electrical characterization. The impact of gate assistance on the SOT switching characteristics are investigated using electrical pulses down to 400ps. The VCMA coefficient ({\xi}) extracted from current switching scheme is found to be the same as that from the magnetic field switch method, which is in the order of 15fJ/Vm for the 80nm to 150nm Devices. Moreover, as expected from the pure electronic VCMA effect, {\xi} is revealed to be independent of the writing speed and gate length. We observe that SOT switching current characteristics are modified linearly with gate voltage (V_g), similar as for the magnetic properties. We interpret this linear behavior as the direct modification of perpendicular magnetic anisotropy (PMA) and nucleation energy induced by VCMA. At V_g = 1V, the SOT write current is decreased by 25%, corresponding to a 45% reduction in total energy down to 30fJ/bit at 400ps speed for the 80nm Devices used in this study. Further, the Device-Scaling criteria are proposed, and we reveal that VGSOT scheme is of great interest as it can mitigate the complex material requirements of achieving high SOT and VCMA parameters for scaled MTJs. Finally, how that VGSOT-MRAM can enable high-density arrays close to two terminal geometries, with high-speed performance and low-power operation, showing great potential for embedded memories as well as in-memory computing applications at advanced technology nodes

  • Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications
    'American Physical Society (APS)', 2021
    Co-Authors: Wu Y.c., Kim W., Gupta M., Perumkunnil M., Couet S., Carpenter R., Rao S., Garello Kevin, Van Beek S.
    Abstract:

    International audienceThe voltage-gate-assisted spin-orbit-torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit-torque (SOT) effects, enabling multiple benefits for magnetic random-access-memory (MRAM) applications. In this work, we give a complete description of the VGSOT writing properties on perpendicular magnetic tunnel junction (PMTJ) Devices, and we propose a detailed methodology for their electrical characterization. The impact of gate assistance on the SOT switching characteristics is investigated using electrical pulses down to 400 ps. The VCMA coefficient (ξ) extracted from the current-switching scheme is found to be the same as that from the magnetic-field-switch method, which is in the order of 15 fJ/Vm for 80-150-nm Devices. Moreover, as expected from the pure electronic VCMA effect, ξ is revealed to be independent of the writing speed and gate length. We observe that SOT switching current characteristics are modified linearly with gate voltage (V g), similar to that for the magnetic properties. We interpret this linear behavior as the direct modification of perpendicular magnetic anisotropy induced by VCMA. At V g = 1 V, the SOT write current is decreased by 25%, corresponding to a 45% reduction in total energy down to 30 fJ/bit at 400 ps speed for the 80-nm Devices used in this study. To test the operation reliability, we investigate the gate-SOT pulse configurations and overlays, and we find that an extended gate duration is able to preserve maximized gate benefit and selectivity. Furthermore, the Device-Scaling criteria are proposed, and we reveal that the VGSOT scheme is of great interest, as it can mitigate the complex material requirements of achieving high SOT and VCMA parameters for scaled MTJs. Finally, we perform design-to-technology co-optimization analysis to show that VGSOT MRAM can enable high-density arrays close to two-terminal geometries, with high-speed performance and low-power operation, showing great potential for embedded memories as well as in memory computing applications at advanced technology nodes