The Experts below are selected from a list of 4131 Experts worldwide ranked by ideXlab platform

Sang-moo Jeong - One of the best experts on this subject based on the ideXlab platform.

  • Robust Metal/AHO/HSG-Cylinder Capacitor Technology Using Diagonal Cell Array Scheme and Double Mold Oxide
    Japanese Journal of Applied Physics, 2005
    Co-Authors: Seong-goo Kim, Chang-suk Hyun, Don Park, Tai-heui Cho, Hong-joon Moon, Hyunchul Kim, Jae-hwang Jung, Sun-joon Kim, Hyuck-jin Kang, Sang-moo Jeong
    Abstract:

    In this paper the novel robust Hemispherical Grain (HSG)-merged Al2O3/HfO2 (AHO) capacitor with Diagonal Cell array scheme and double mold oxide (DMO) is introduced. The capacitor process with Diagonal Cell array scheme and double mold oxide can maximize storage node (SN) height up to 2.0 µm in 0.11 µm dynamic random access memory (DRAM) technology by enlarging the bottom size of SN. Also we developed the HSG-merged AHO capacitor for the first time in mass production. The HSG-merged AHO capacitor technique exhibited a capacitance enhancement by 24% without any significant decrease in breakdown voltage compared to Al2O3 (ALO) capacitor.

  • robust metal aho hsg cylinder capacitor technology using Diagonal Cell array scheme and double mold oxide
    Japanese Journal of Applied Physics, 2005
    Co-Authors: Seong-goo Kim, Chang-suk Hyun, Don Park, Tai-heui Cho, Hong-joon Moon, Hyunchul Kim, Jae-hwang Jung, Sun-joon Kim, Hyuck-jin Kang, Sang-moo Jeong
    Abstract:

    In this paper the novel robust Hemispherical Grain (HSG)-merged Al2O3/HfO2 (AHO) capacitor with Diagonal Cell array scheme and double mold oxide (DMO) is introduced. The capacitor process with Diagonal Cell array scheme and double mold oxide can maximize storage node (SN) height up to 2.0 µm in 0.11 µm dynamic random access memory (DRAM) technology by enlarging the bottom size of SN. Also we developed the HSG-merged AHO capacitor for the first time in mass production. The HSG-merged AHO capacitor technique exhibited a capacitance enhancement by 24% without any significant decrease in breakdown voltage compared to Al2O3 (ALO) capacitor.

Seong-goo Kim - One of the best experts on this subject based on the ideXlab platform.

  • Robust Metal/AHO/HSG-Cylinder Capacitor Technology Using Diagonal Cell Array Scheme and Double Mold Oxide
    Japanese Journal of Applied Physics, 2005
    Co-Authors: Seong-goo Kim, Chang-suk Hyun, Don Park, Tai-heui Cho, Hong-joon Moon, Hyunchul Kim, Jae-hwang Jung, Sun-joon Kim, Hyuck-jin Kang, Sang-moo Jeong
    Abstract:

    In this paper the novel robust Hemispherical Grain (HSG)-merged Al2O3/HfO2 (AHO) capacitor with Diagonal Cell array scheme and double mold oxide (DMO) is introduced. The capacitor process with Diagonal Cell array scheme and double mold oxide can maximize storage node (SN) height up to 2.0 µm in 0.11 µm dynamic random access memory (DRAM) technology by enlarging the bottom size of SN. Also we developed the HSG-merged AHO capacitor for the first time in mass production. The HSG-merged AHO capacitor technique exhibited a capacitance enhancement by 24% without any significant decrease in breakdown voltage compared to Al2O3 (ALO) capacitor.

  • robust metal aho hsg cylinder capacitor technology using Diagonal Cell array scheme and double mold oxide
    Japanese Journal of Applied Physics, 2005
    Co-Authors: Seong-goo Kim, Chang-suk Hyun, Don Park, Tai-heui Cho, Hong-joon Moon, Hyunchul Kim, Jae-hwang Jung, Sun-joon Kim, Hyuck-jin Kang, Sang-moo Jeong
    Abstract:

    In this paper the novel robust Hemispherical Grain (HSG)-merged Al2O3/HfO2 (AHO) capacitor with Diagonal Cell array scheme and double mold oxide (DMO) is introduced. The capacitor process with Diagonal Cell array scheme and double mold oxide can maximize storage node (SN) height up to 2.0 µm in 0.11 µm dynamic random access memory (DRAM) technology by enlarging the bottom size of SN. Also we developed the HSG-merged AHO capacitor for the first time in mass production. The HSG-merged AHO capacitor technique exhibited a capacitance enhancement by 24% without any significant decrease in breakdown voltage compared to Al2O3 (ALO) capacitor.

Don Park - One of the best experts on this subject based on the ideXlab platform.

  • Robust Metal/AHO/HSG-Cylinder Capacitor Technology Using Diagonal Cell Array Scheme and Double Mold Oxide
    Japanese Journal of Applied Physics, 2005
    Co-Authors: Seong-goo Kim, Chang-suk Hyun, Don Park, Tai-heui Cho, Hong-joon Moon, Hyunchul Kim, Jae-hwang Jung, Sun-joon Kim, Hyuck-jin Kang, Sang-moo Jeong
    Abstract:

    In this paper the novel robust Hemispherical Grain (HSG)-merged Al2O3/HfO2 (AHO) capacitor with Diagonal Cell array scheme and double mold oxide (DMO) is introduced. The capacitor process with Diagonal Cell array scheme and double mold oxide can maximize storage node (SN) height up to 2.0 µm in 0.11 µm dynamic random access memory (DRAM) technology by enlarging the bottom size of SN. Also we developed the HSG-merged AHO capacitor for the first time in mass production. The HSG-merged AHO capacitor technique exhibited a capacitance enhancement by 24% without any significant decrease in breakdown voltage compared to Al2O3 (ALO) capacitor.

  • robust metal aho hsg cylinder capacitor technology using Diagonal Cell array scheme and double mold oxide
    Japanese Journal of Applied Physics, 2005
    Co-Authors: Seong-goo Kim, Chang-suk Hyun, Don Park, Tai-heui Cho, Hong-joon Moon, Hyunchul Kim, Jae-hwang Jung, Sun-joon Kim, Hyuck-jin Kang, Sang-moo Jeong
    Abstract:

    In this paper the novel robust Hemispherical Grain (HSG)-merged Al2O3/HfO2 (AHO) capacitor with Diagonal Cell array scheme and double mold oxide (DMO) is introduced. The capacitor process with Diagonal Cell array scheme and double mold oxide can maximize storage node (SN) height up to 2.0 µm in 0.11 µm dynamic random access memory (DRAM) technology by enlarging the bottom size of SN. Also we developed the HSG-merged AHO capacitor for the first time in mass production. The HSG-merged AHO capacitor technique exhibited a capacitance enhancement by 24% without any significant decrease in breakdown voltage compared to Al2O3 (ALO) capacitor.

Tai-heui Cho - One of the best experts on this subject based on the ideXlab platform.

  • Robust Metal/AHO/HSG-Cylinder Capacitor Technology Using Diagonal Cell Array Scheme and Double Mold Oxide
    Japanese Journal of Applied Physics, 2005
    Co-Authors: Seong-goo Kim, Chang-suk Hyun, Don Park, Tai-heui Cho, Hong-joon Moon, Hyunchul Kim, Jae-hwang Jung, Sun-joon Kim, Hyuck-jin Kang, Sang-moo Jeong
    Abstract:

    In this paper the novel robust Hemispherical Grain (HSG)-merged Al2O3/HfO2 (AHO) capacitor with Diagonal Cell array scheme and double mold oxide (DMO) is introduced. The capacitor process with Diagonal Cell array scheme and double mold oxide can maximize storage node (SN) height up to 2.0 µm in 0.11 µm dynamic random access memory (DRAM) technology by enlarging the bottom size of SN. Also we developed the HSG-merged AHO capacitor for the first time in mass production. The HSG-merged AHO capacitor technique exhibited a capacitance enhancement by 24% without any significant decrease in breakdown voltage compared to Al2O3 (ALO) capacitor.

  • robust metal aho hsg cylinder capacitor technology using Diagonal Cell array scheme and double mold oxide
    Japanese Journal of Applied Physics, 2005
    Co-Authors: Seong-goo Kim, Chang-suk Hyun, Don Park, Tai-heui Cho, Hong-joon Moon, Hyunchul Kim, Jae-hwang Jung, Sun-joon Kim, Hyuck-jin Kang, Sang-moo Jeong
    Abstract:

    In this paper the novel robust Hemispherical Grain (HSG)-merged Al2O3/HfO2 (AHO) capacitor with Diagonal Cell array scheme and double mold oxide (DMO) is introduced. The capacitor process with Diagonal Cell array scheme and double mold oxide can maximize storage node (SN) height up to 2.0 µm in 0.11 µm dynamic random access memory (DRAM) technology by enlarging the bottom size of SN. Also we developed the HSG-merged AHO capacitor for the first time in mass production. The HSG-merged AHO capacitor technique exhibited a capacitance enhancement by 24% without any significant decrease in breakdown voltage compared to Al2O3 (ALO) capacitor.

Hong-joon Moon - One of the best experts on this subject based on the ideXlab platform.

  • Robust Metal/AHO/HSG-Cylinder Capacitor Technology Using Diagonal Cell Array Scheme and Double Mold Oxide
    Japanese Journal of Applied Physics, 2005
    Co-Authors: Seong-goo Kim, Chang-suk Hyun, Don Park, Tai-heui Cho, Hong-joon Moon, Hyunchul Kim, Jae-hwang Jung, Sun-joon Kim, Hyuck-jin Kang, Sang-moo Jeong
    Abstract:

    In this paper the novel robust Hemispherical Grain (HSG)-merged Al2O3/HfO2 (AHO) capacitor with Diagonal Cell array scheme and double mold oxide (DMO) is introduced. The capacitor process with Diagonal Cell array scheme and double mold oxide can maximize storage node (SN) height up to 2.0 µm in 0.11 µm dynamic random access memory (DRAM) technology by enlarging the bottom size of SN. Also we developed the HSG-merged AHO capacitor for the first time in mass production. The HSG-merged AHO capacitor technique exhibited a capacitance enhancement by 24% without any significant decrease in breakdown voltage compared to Al2O3 (ALO) capacitor.

  • robust metal aho hsg cylinder capacitor technology using Diagonal Cell array scheme and double mold oxide
    Japanese Journal of Applied Physics, 2005
    Co-Authors: Seong-goo Kim, Chang-suk Hyun, Don Park, Tai-heui Cho, Hong-joon Moon, Hyunchul Kim, Jae-hwang Jung, Sun-joon Kim, Hyuck-jin Kang, Sang-moo Jeong
    Abstract:

    In this paper the novel robust Hemispherical Grain (HSG)-merged Al2O3/HfO2 (AHO) capacitor with Diagonal Cell array scheme and double mold oxide (DMO) is introduced. The capacitor process with Diagonal Cell array scheme and double mold oxide can maximize storage node (SN) height up to 2.0 µm in 0.11 µm dynamic random access memory (DRAM) technology by enlarging the bottom size of SN. Also we developed the HSG-merged AHO capacitor for the first time in mass production. The HSG-merged AHO capacitor technique exhibited a capacitance enhancement by 24% without any significant decrease in breakdown voltage compared to Al2O3 (ALO) capacitor.