The Experts below are selected from a list of 47217 Experts worldwide ranked by ideXlab platform
Y S Chun - One of the best experts on this subject based on the ideXlab platform.
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limitation of wsix wn Diffusion Barrier for tungsten dual polymetal gate memory devices
International Reliability Physics Symposium, 2007Co-Authors: Kwanyong Lim, Min Gyu Sung, Yongtaik Kim, H J Cho, Seung Ryong Lee, S A Jang, S G Choi, Yunbong Lee, Y S Chun, Y H KimAbstract:We compared WSix/WN and Ti/WN Diffusion Barriers for tungsten dual polymetal gate (W-DPG) application, in terms of device performance and gate oxide reliability. WSix/WN Diffusion Barrier shows degradation of gate oxide, which is found to be due to the B-N dielectric formation and subsequent breakdown of Diffusion Barrier. Relatively, Ti/WN Diffusion Barrier shows excellent device performance in terms of R/O delay and gate oxide reliability
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Limitation of WSix/WN Diffusion Barrier for Tungsten Dual Polymetal Gate Memory Devices
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007Co-Authors: Kwanyong Lim, Min Gyu Sung, Yongtaik Kim, H J Cho, Seung Ryong Lee, S A Jang, S G Choi, Yunbong Lee, Y S ChunAbstract:We compared WSix/WN and Ti/WN Diffusion Barriers for tungsten dual polymetal gate (W-DPG) application, in terms of device performance and gate oxide reliability. WSix/WN Diffusion Barrier shows degradation of gate oxide, which is found to be due to the B-N dielectric formation and subsequent breakdown of Diffusion Barrier. Relatively, Ti/WN Diffusion Barrier shows excellent device performance in terms of R/O delay and gate oxide reliability
Kwanyong Lim - One of the best experts on this subject based on the ideXlab platform.
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limitation of wsix wn Diffusion Barrier for tungsten dual polymetal gate memory devices
International Reliability Physics Symposium, 2007Co-Authors: Kwanyong Lim, Min Gyu Sung, Yongtaik Kim, H J Cho, Seung Ryong Lee, S A Jang, S G Choi, Yunbong Lee, Y S Chun, Y H KimAbstract:We compared WSix/WN and Ti/WN Diffusion Barriers for tungsten dual polymetal gate (W-DPG) application, in terms of device performance and gate oxide reliability. WSix/WN Diffusion Barrier shows degradation of gate oxide, which is found to be due to the B-N dielectric formation and subsequent breakdown of Diffusion Barrier. Relatively, Ti/WN Diffusion Barrier shows excellent device performance in terms of R/O delay and gate oxide reliability
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Limitation of WSix/WN Diffusion Barrier for Tungsten Dual Polymetal Gate Memory Devices
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007Co-Authors: Kwanyong Lim, Min Gyu Sung, Yongtaik Kim, H J Cho, Seung Ryong Lee, S A Jang, S G Choi, Yunbong Lee, Y S ChunAbstract:We compared WSix/WN and Ti/WN Diffusion Barriers for tungsten dual polymetal gate (W-DPG) application, in terms of device performance and gate oxide reliability. WSix/WN Diffusion Barrier shows degradation of gate oxide, which is found to be due to the B-N dielectric formation and subsequent breakdown of Diffusion Barrier. Relatively, Ti/WN Diffusion Barrier shows excellent device performance in terms of R/O delay and gate oxide reliability
Y H Kim - One of the best experts on this subject based on the ideXlab platform.
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limitation of wsix wn Diffusion Barrier for tungsten dual polymetal gate memory devices
International Reliability Physics Symposium, 2007Co-Authors: Kwanyong Lim, Min Gyu Sung, Yongtaik Kim, H J Cho, Seung Ryong Lee, S A Jang, S G Choi, Yunbong Lee, Y S Chun, Y H KimAbstract:We compared WSix/WN and Ti/WN Diffusion Barriers for tungsten dual polymetal gate (W-DPG) application, in terms of device performance and gate oxide reliability. WSix/WN Diffusion Barrier shows degradation of gate oxide, which is found to be due to the B-N dielectric formation and subsequent breakdown of Diffusion Barrier. Relatively, Ti/WN Diffusion Barrier shows excellent device performance in terms of R/O delay and gate oxide reliability
Yunbong Lee - One of the best experts on this subject based on the ideXlab platform.
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limitation of wsix wn Diffusion Barrier for tungsten dual polymetal gate memory devices
International Reliability Physics Symposium, 2007Co-Authors: Kwanyong Lim, Min Gyu Sung, Yongtaik Kim, H J Cho, Seung Ryong Lee, S A Jang, S G Choi, Yunbong Lee, Y S Chun, Y H KimAbstract:We compared WSix/WN and Ti/WN Diffusion Barriers for tungsten dual polymetal gate (W-DPG) application, in terms of device performance and gate oxide reliability. WSix/WN Diffusion Barrier shows degradation of gate oxide, which is found to be due to the B-N dielectric formation and subsequent breakdown of Diffusion Barrier. Relatively, Ti/WN Diffusion Barrier shows excellent device performance in terms of R/O delay and gate oxide reliability
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Limitation of WSix/WN Diffusion Barrier for Tungsten Dual Polymetal Gate Memory Devices
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007Co-Authors: Kwanyong Lim, Min Gyu Sung, Yongtaik Kim, H J Cho, Seung Ryong Lee, S A Jang, S G Choi, Yunbong Lee, Y S ChunAbstract:We compared WSix/WN and Ti/WN Diffusion Barriers for tungsten dual polymetal gate (W-DPG) application, in terms of device performance and gate oxide reliability. WSix/WN Diffusion Barrier shows degradation of gate oxide, which is found to be due to the B-N dielectric formation and subsequent breakdown of Diffusion Barrier. Relatively, Ti/WN Diffusion Barrier shows excellent device performance in terms of R/O delay and gate oxide reliability
Min Gyu Sung - One of the best experts on this subject based on the ideXlab platform.
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limitation of wsix wn Diffusion Barrier for tungsten dual polymetal gate memory devices
International Reliability Physics Symposium, 2007Co-Authors: Kwanyong Lim, Min Gyu Sung, Yongtaik Kim, H J Cho, Seung Ryong Lee, S A Jang, S G Choi, Yunbong Lee, Y S Chun, Y H KimAbstract:We compared WSix/WN and Ti/WN Diffusion Barriers for tungsten dual polymetal gate (W-DPG) application, in terms of device performance and gate oxide reliability. WSix/WN Diffusion Barrier shows degradation of gate oxide, which is found to be due to the B-N dielectric formation and subsequent breakdown of Diffusion Barrier. Relatively, Ti/WN Diffusion Barrier shows excellent device performance in terms of R/O delay and gate oxide reliability
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Limitation of WSix/WN Diffusion Barrier for Tungsten Dual Polymetal Gate Memory Devices
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007Co-Authors: Kwanyong Lim, Min Gyu Sung, Yongtaik Kim, H J Cho, Seung Ryong Lee, S A Jang, S G Choi, Yunbong Lee, Y S ChunAbstract:We compared WSix/WN and Ti/WN Diffusion Barriers for tungsten dual polymetal gate (W-DPG) application, in terms of device performance and gate oxide reliability. WSix/WN Diffusion Barrier shows degradation of gate oxide, which is found to be due to the B-N dielectric formation and subsequent breakdown of Diffusion Barrier. Relatively, Ti/WN Diffusion Barrier shows excellent device performance in terms of R/O delay and gate oxide reliability