The Experts below are selected from a list of 264 Experts worldwide ranked by ideXlab platform
Tsung- Yen Tsai - One of the best experts on this subject based on the ideXlab platform.
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An Ultra-low Quiescent Current 250NA Low Dropout Regulator for No-Load to 10MA Internet-of-Evervthing Applications
2018 IEEE Symposium on VLSI Circuits, 2018Co-Authors: Shao-qi Chen, Chia-ming Huang, Ke-homg Chen, Tsung- Yen TsaiAbstract:The proposed analog low-dropout regulator (ALDO) achieves 250nA of ultra-low quiescent current and 130ns of fast transient response simultaneously. The proposed use of an ultralow quiescent current (ULQC) error amplifier to regulate the Gate of power MOSFET while the auxiliary Digital Gate voltage control (DGVC) circuit contributes to the load transient response. Moreover, the switching frequency is dynamically reduced by the frequency modulation after entering the steady state. The line and load regulation rates are 0.14 m V /V and 0.2 1mV/mA, respectively. High current efficiency of 99.91 % and the best merit-of-figure in steady state are achieved.
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VLSI Circuits - An Ultra-low Quiescent Current 250NA Low Dropout Regulator for No-Load to 10MA Internet-of-Evervthing Applications
2018 IEEE Symposium on VLSI Circuits, 2018Co-Authors: Shao-qi Chen, Chia-ming Huang, Ke-homg Chen, Tsung- Yen TsaiAbstract:The proposed analog low-dropout regulator (ALDO) achieves 250nA of ultra-low quiescent current and 130ns of fast transient response simultaneously. The proposed use of an ultralow quiescent current (ULQC) error amplifier to regulate the Gate of power MOSFET while the auxiliary Digital Gate voltage control (DGVC) circuit contributes to the load transient response. Moreover, the switching frequency is dynamically reduced by the frequency modulation after entering the steady state. The line and load regulation rates are 0.14 m V /V and 0.2 1mV/mA, respectively. High current efficiency of 99.91 % and the best merit-of-figure in steady state are achieved.
Shao-qi Chen - One of the best experts on this subject based on the ideXlab platform.
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An Ultra-low Quiescent Current 250NA Low Dropout Regulator for No-Load to 10MA Internet-of-Evervthing Applications
2018 IEEE Symposium on VLSI Circuits, 2018Co-Authors: Shao-qi Chen, Chia-ming Huang, Ke-homg Chen, Tsung- Yen TsaiAbstract:The proposed analog low-dropout regulator (ALDO) achieves 250nA of ultra-low quiescent current and 130ns of fast transient response simultaneously. The proposed use of an ultralow quiescent current (ULQC) error amplifier to regulate the Gate of power MOSFET while the auxiliary Digital Gate voltage control (DGVC) circuit contributes to the load transient response. Moreover, the switching frequency is dynamically reduced by the frequency modulation after entering the steady state. The line and load regulation rates are 0.14 m V /V and 0.2 1mV/mA, respectively. High current efficiency of 99.91 % and the best merit-of-figure in steady state are achieved.
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VLSI Circuits - An Ultra-low Quiescent Current 250NA Low Dropout Regulator for No-Load to 10MA Internet-of-Evervthing Applications
2018 IEEE Symposium on VLSI Circuits, 2018Co-Authors: Shao-qi Chen, Chia-ming Huang, Ke-homg Chen, Tsung- Yen TsaiAbstract:The proposed analog low-dropout regulator (ALDO) achieves 250nA of ultra-low quiescent current and 130ns of fast transient response simultaneously. The proposed use of an ultralow quiescent current (ULQC) error amplifier to regulate the Gate of power MOSFET while the auxiliary Digital Gate voltage control (DGVC) circuit contributes to the load transient response. Moreover, the switching frequency is dynamically reduced by the frequency modulation after entering the steady state. The line and load regulation rates are 0.14 m V /V and 0.2 1mV/mA, respectively. High current efficiency of 99.91 % and the best merit-of-figure in steady state are achieved.
Chia-ming Huang - One of the best experts on this subject based on the ideXlab platform.
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An Ultra-low Quiescent Current 250NA Low Dropout Regulator for No-Load to 10MA Internet-of-Evervthing Applications
2018 IEEE Symposium on VLSI Circuits, 2018Co-Authors: Shao-qi Chen, Chia-ming Huang, Ke-homg Chen, Tsung- Yen TsaiAbstract:The proposed analog low-dropout regulator (ALDO) achieves 250nA of ultra-low quiescent current and 130ns of fast transient response simultaneously. The proposed use of an ultralow quiescent current (ULQC) error amplifier to regulate the Gate of power MOSFET while the auxiliary Digital Gate voltage control (DGVC) circuit contributes to the load transient response. Moreover, the switching frequency is dynamically reduced by the frequency modulation after entering the steady state. The line and load regulation rates are 0.14 m V /V and 0.2 1mV/mA, respectively. High current efficiency of 99.91 % and the best merit-of-figure in steady state are achieved.
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VLSI Circuits - An Ultra-low Quiescent Current 250NA Low Dropout Regulator for No-Load to 10MA Internet-of-Evervthing Applications
2018 IEEE Symposium on VLSI Circuits, 2018Co-Authors: Shao-qi Chen, Chia-ming Huang, Ke-homg Chen, Tsung- Yen TsaiAbstract:The proposed analog low-dropout regulator (ALDO) achieves 250nA of ultra-low quiescent current and 130ns of fast transient response simultaneously. The proposed use of an ultralow quiescent current (ULQC) error amplifier to regulate the Gate of power MOSFET while the auxiliary Digital Gate voltage control (DGVC) circuit contributes to the load transient response. Moreover, the switching frequency is dynamically reduced by the frequency modulation after entering the steady state. The line and load regulation rates are 0.14 m V /V and 0.2 1mV/mA, respectively. High current efficiency of 99.91 % and the best merit-of-figure in steady state are achieved.
Ke-homg Chen - One of the best experts on this subject based on the ideXlab platform.
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An Ultra-low Quiescent Current 250NA Low Dropout Regulator for No-Load to 10MA Internet-of-Evervthing Applications
2018 IEEE Symposium on VLSI Circuits, 2018Co-Authors: Shao-qi Chen, Chia-ming Huang, Ke-homg Chen, Tsung- Yen TsaiAbstract:The proposed analog low-dropout regulator (ALDO) achieves 250nA of ultra-low quiescent current and 130ns of fast transient response simultaneously. The proposed use of an ultralow quiescent current (ULQC) error amplifier to regulate the Gate of power MOSFET while the auxiliary Digital Gate voltage control (DGVC) circuit contributes to the load transient response. Moreover, the switching frequency is dynamically reduced by the frequency modulation after entering the steady state. The line and load regulation rates are 0.14 m V /V and 0.2 1mV/mA, respectively. High current efficiency of 99.91 % and the best merit-of-figure in steady state are achieved.
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VLSI Circuits - An Ultra-low Quiescent Current 250NA Low Dropout Regulator for No-Load to 10MA Internet-of-Evervthing Applications
2018 IEEE Symposium on VLSI Circuits, 2018Co-Authors: Shao-qi Chen, Chia-ming Huang, Ke-homg Chen, Tsung- Yen TsaiAbstract:The proposed analog low-dropout regulator (ALDO) achieves 250nA of ultra-low quiescent current and 130ns of fast transient response simultaneously. The proposed use of an ultralow quiescent current (ULQC) error amplifier to regulate the Gate of power MOSFET while the auxiliary Digital Gate voltage control (DGVC) circuit contributes to the load transient response. Moreover, the switching frequency is dynamically reduced by the frequency modulation after entering the steady state. The line and load regulation rates are 0.14 m V /V and 0.2 1mV/mA, respectively. High current efficiency of 99.91 % and the best merit-of-figure in steady state are achieved.
Kevin J. Chen - One of the best experts on this subject based on the ideXlab platform.
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Normally-off hybrid Al2O3/GaN MOSFET on silicon substrate based on wet-etching
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014Co-Authors: Maojun Wang, Ye Wang, Chuan Zhang, Jinyan Wang, Wengang Wu, Bo Shen, Kevin J. ChenAbstract:This paper reports a normally-off high voltage hybrid Al2O3/GaN Gate-recessed MOSFET fabricated on silicon substrate. The normally off operation was implemented by Digital Gate recess using an oxidation and wet etching based AlGaN barrier remove technique. The Al2O3/GaN MOSFET features a true normally off operation with a threshold voltage of 2 V extracted by the linear extrapolation of the transfer curve. The three terminal off-state breakdown voltage is 1650 V for the device with 30 μm Gate-drain distance with floating Si substrate. The breakdown voltage is limited to 1000 V when the Si substrate is grounded. The on-resistance is 7.0 mΩ·cm2 for the device with 30 μm Gate-drain distance and the power figure of merit is 388 MW/cm2. The small signal RF performance of the normally-off GaN MOSFET is also evaluated.