The Experts below are selected from a list of 18456 Experts worldwide ranked by ideXlab platform
R Beanland - One of the best experts on this subject based on the ideXlab platform.
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improved performance of 1 3μm multilayer inas quantum dot lasers using a high growth temperature gaas spacer layer
Applied Physics Letters, 2004Co-Authors: I R Sellers, T J Badcock, D J Mowbray, M S Skolnick, K M Groom, M Gutierrez, M Hopkinson, J S Ng, J P R David, R BeanlandAbstract:The use of a high-growth-temperature GaAs spacer layer is demonstrated to significantly improve the performance of 1.3μm multilayer self-assembled InAs∕InGaAs dot-in-a-well lasers. The high-growth-temperature spacer layer inhibits threading Dislocation Formation, resulting in enhanced electrical and optical characteristics. Incorporation of these spacer layers allows the fabrication of multilayer quantum-dot devices emitting above 1.3μm, with extremely low room-temperature threshold current densities and with operation up to 105°C.
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improved performance of 1 3 μm multilayer inas quantum dot lasers using a high growth temperature gaas spacer layer
Applied Physics Letters, 2004Co-Authors: H Y Liu, I R Sellers, T J Badcock, D J Mowbray, M S Skolnick, K M Groom, M Gutierrez, M Hopkinson, J P R David, R BeanlandAbstract:The use of a high-growth-temperature GaAs spacer layer is demonstrated to significantly improve the performance of 1.3μm multilayer self-assembled InAs∕InGaAs dot-in-a-well lasers. The high-growth-temperature spacer layer inhibits threading Dislocation Formation, resulting in enhanced electrical and optical characteristics. Incorporation of these spacer layers allows the fabrication of multilayer quantum-dot devices emitting above 1.3μm, with extremely low room-temperature threshold current densities and with operation up to 105°C.
I R Sellers - One of the best experts on this subject based on the ideXlab platform.
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improved performance of 1 3μm multilayer inas quantum dot lasers using a high growth temperature gaas spacer layer
Applied Physics Letters, 2004Co-Authors: I R Sellers, T J Badcock, D J Mowbray, M S Skolnick, K M Groom, M Gutierrez, M Hopkinson, J S Ng, J P R David, R BeanlandAbstract:The use of a high-growth-temperature GaAs spacer layer is demonstrated to significantly improve the performance of 1.3μm multilayer self-assembled InAs∕InGaAs dot-in-a-well lasers. The high-growth-temperature spacer layer inhibits threading Dislocation Formation, resulting in enhanced electrical and optical characteristics. Incorporation of these spacer layers allows the fabrication of multilayer quantum-dot devices emitting above 1.3μm, with extremely low room-temperature threshold current densities and with operation up to 105°C.
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improved performance of 1 3 μm multilayer inas quantum dot lasers using a high growth temperature gaas spacer layer
Applied Physics Letters, 2004Co-Authors: H Y Liu, I R Sellers, T J Badcock, D J Mowbray, M S Skolnick, K M Groom, M Gutierrez, M Hopkinson, J P R David, R BeanlandAbstract:The use of a high-growth-temperature GaAs spacer layer is demonstrated to significantly improve the performance of 1.3μm multilayer self-assembled InAs∕InGaAs dot-in-a-well lasers. The high-growth-temperature spacer layer inhibits threading Dislocation Formation, resulting in enhanced electrical and optical characteristics. Incorporation of these spacer layers allows the fabrication of multilayer quantum-dot devices emitting above 1.3μm, with extremely low room-temperature threshold current densities and with operation up to 105°C.
J P R David - One of the best experts on this subject based on the ideXlab platform.
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improved performance of 1 3μm multilayer inas quantum dot lasers using a high growth temperature gaas spacer layer
Applied Physics Letters, 2004Co-Authors: I R Sellers, T J Badcock, D J Mowbray, M S Skolnick, K M Groom, M Gutierrez, M Hopkinson, J S Ng, J P R David, R BeanlandAbstract:The use of a high-growth-temperature GaAs spacer layer is demonstrated to significantly improve the performance of 1.3μm multilayer self-assembled InAs∕InGaAs dot-in-a-well lasers. The high-growth-temperature spacer layer inhibits threading Dislocation Formation, resulting in enhanced electrical and optical characteristics. Incorporation of these spacer layers allows the fabrication of multilayer quantum-dot devices emitting above 1.3μm, with extremely low room-temperature threshold current densities and with operation up to 105°C.
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improved performance of 1 3 μm multilayer inas quantum dot lasers using a high growth temperature gaas spacer layer
Applied Physics Letters, 2004Co-Authors: H Y Liu, I R Sellers, T J Badcock, D J Mowbray, M S Skolnick, K M Groom, M Gutierrez, M Hopkinson, J P R David, R BeanlandAbstract:The use of a high-growth-temperature GaAs spacer layer is demonstrated to significantly improve the performance of 1.3μm multilayer self-assembled InAs∕InGaAs dot-in-a-well lasers. The high-growth-temperature spacer layer inhibits threading Dislocation Formation, resulting in enhanced electrical and optical characteristics. Incorporation of these spacer layers allows the fabrication of multilayer quantum-dot devices emitting above 1.3μm, with extremely low room-temperature threshold current densities and with operation up to 105°C.
M Hopkinson - One of the best experts on this subject based on the ideXlab platform.
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improved performance of 1 3μm multilayer inas quantum dot lasers using a high growth temperature gaas spacer layer
Applied Physics Letters, 2004Co-Authors: I R Sellers, T J Badcock, D J Mowbray, M S Skolnick, K M Groom, M Gutierrez, M Hopkinson, J S Ng, J P R David, R BeanlandAbstract:The use of a high-growth-temperature GaAs spacer layer is demonstrated to significantly improve the performance of 1.3μm multilayer self-assembled InAs∕InGaAs dot-in-a-well lasers. The high-growth-temperature spacer layer inhibits threading Dislocation Formation, resulting in enhanced electrical and optical characteristics. Incorporation of these spacer layers allows the fabrication of multilayer quantum-dot devices emitting above 1.3μm, with extremely low room-temperature threshold current densities and with operation up to 105°C.
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improved performance of 1 3 μm multilayer inas quantum dot lasers using a high growth temperature gaas spacer layer
Applied Physics Letters, 2004Co-Authors: H Y Liu, I R Sellers, T J Badcock, D J Mowbray, M S Skolnick, K M Groom, M Gutierrez, M Hopkinson, J P R David, R BeanlandAbstract:The use of a high-growth-temperature GaAs spacer layer is demonstrated to significantly improve the performance of 1.3μm multilayer self-assembled InAs∕InGaAs dot-in-a-well lasers. The high-growth-temperature spacer layer inhibits threading Dislocation Formation, resulting in enhanced electrical and optical characteristics. Incorporation of these spacer layers allows the fabrication of multilayer quantum-dot devices emitting above 1.3μm, with extremely low room-temperature threshold current densities and with operation up to 105°C.
M Gutierrez - One of the best experts on this subject based on the ideXlab platform.
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improved performance of 1 3μm multilayer inas quantum dot lasers using a high growth temperature gaas spacer layer
Applied Physics Letters, 2004Co-Authors: I R Sellers, T J Badcock, D J Mowbray, M S Skolnick, K M Groom, M Gutierrez, M Hopkinson, J S Ng, J P R David, R BeanlandAbstract:The use of a high-growth-temperature GaAs spacer layer is demonstrated to significantly improve the performance of 1.3μm multilayer self-assembled InAs∕InGaAs dot-in-a-well lasers. The high-growth-temperature spacer layer inhibits threading Dislocation Formation, resulting in enhanced electrical and optical characteristics. Incorporation of these spacer layers allows the fabrication of multilayer quantum-dot devices emitting above 1.3μm, with extremely low room-temperature threshold current densities and with operation up to 105°C.
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improved performance of 1 3 μm multilayer inas quantum dot lasers using a high growth temperature gaas spacer layer
Applied Physics Letters, 2004Co-Authors: H Y Liu, I R Sellers, T J Badcock, D J Mowbray, M S Skolnick, K M Groom, M Gutierrez, M Hopkinson, J P R David, R BeanlandAbstract:The use of a high-growth-temperature GaAs spacer layer is demonstrated to significantly improve the performance of 1.3μm multilayer self-assembled InAs∕InGaAs dot-in-a-well lasers. The high-growth-temperature spacer layer inhibits threading Dislocation Formation, resulting in enhanced electrical and optical characteristics. Incorporation of these spacer layers allows the fabrication of multilayer quantum-dot devices emitting above 1.3μm, with extremely low room-temperature threshold current densities and with operation up to 105°C.