The Experts below are selected from a list of 47973 Experts worldwide ranked by ideXlab platform
D. P. Belanger - One of the best experts on this subject based on the ideXlab platform.
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Crossover from pure Ising to random-exchange Dominated Behavior of the two-dimensional antiferromagnet Rb 2 Co 1-x Mg x F 4
Physical Review B, 1998Co-Authors: Christian Binek, Wolfgang Kleemann, D. P. BelangerAbstract:The temperature dependence of the uniform susceptibility, chi, of diluted two-dimensional Ising antiferromagnets Rb2Co1-xMgxF4,0
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crossover from pure ising to random exchange Dominated Behavior of the two dimensional antiferromagnet rb 2 co 1 x mg x f 4
Physical Review B, 1998Co-Authors: Christian Binek, Wolfgang Kleemann, D. P. BelangerAbstract:The temperature dependence of the uniform susceptibility, chi, of diluted two-dimensional Ising antiferromagnets Rb2Co1-xMgxF4,0<=x<=0.4, is investigated in the limit of vanishing external field. Novel data for x = 0.15 are compared with those obtained for x = 0 and 0.4 by Breed et al. (1969) and Ikeda (1983), respectively. Whereas in the pure case, x = 0, Fishers (1962) "energetic contribution" dominates, Aharony et al.s (1979,1986) "random contribution" becomes increasingly important with increasing x. Taking into account both terms not only with respect to the global ordering temperature, TN(x), but also in relation to the "local" phase transition temperatures TN throughout the Griffiths regime,TN(x)<=TN<=TN(0), a satisfactory quantitative description of chi vs. T is deduced for any x above the percolation threshold.
Manijeh Razeghi - One of the best experts on this subject based on the ideXlab platform.
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elimination of surface leakage in gate controlled type ii inas gasb mid infrared photodetectors
Applied Physics Letters, 2011Co-Authors: G Chen, Binhminh Nguyen, A M Hoang, Edward Kwei Wei Huang, S R Darvish, Manijeh RazeghiAbstract:The electrical performance of mid-infrared type-II superlattice M-barrier photodetectors is shown to be limited by surface leakage. By applying gate bias on the mesa sidewall surface, leakage current is significantly reduced. Qualitatively IV modeling shows diffusion-Dominated Behavior of dark current at temperatures greater than 120 K. At 110 K, the dark current of gated device is reduced by more than 2 orders of magnitude, reaching the measurement system noise floor. With a quantum efficiency of 48% in front side illumination configuration, a 4.7μm cut-off gated device attains a specific detectivity of 2.5 × 1014 cmHz1/2/W at 110 K, which is 3.6 times higher than in ungated devices.
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Elimination of surface leakage in gate controlled type-II InAs/GaSb mid-infrared photodetectors
Applied Physics Letters, 2011Co-Authors: G Chen, Binhminh Nguyen, A M Hoang, Edward Kwei Wei Huang, S R Darvish, Manijeh RazeghiAbstract:The electrical performance of mid-infrared type-II superlattice M-barrier photodetectors is shown to be limited by surface leakage. By applying gate bias on the mesa sidewall surface, leakage current is significantly reduced. Qualitatively IV modeling shows diffusion-Dominated Behavior of dark current at temperatures greater than 120 K. At 110 K, the dark current of gated device is reduced by more than 2 orders of magnitude, reaching the measurement system noise floor. With a quantum efficiency of 48% in front side illumination configuration, a 4.7μm cut-off gated device attains a specific detectivity of 2.5 × 1014 cmHz1/2/W at 110 K, which is 3.6 times higher than in ungated devices.
Christian Binek - One of the best experts on this subject based on the ideXlab platform.
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Crossover from pure Ising to random-exchange Dominated Behavior of the two-dimensional antiferromagnet Rb 2 Co 1-x Mg x F 4
Physical Review B, 1998Co-Authors: Christian Binek, Wolfgang Kleemann, D. P. BelangerAbstract:The temperature dependence of the uniform susceptibility, chi, of diluted two-dimensional Ising antiferromagnets Rb2Co1-xMgxF4,0
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crossover from pure ising to random exchange Dominated Behavior of the two dimensional antiferromagnet rb 2 co 1 x mg x f 4
Physical Review B, 1998Co-Authors: Christian Binek, Wolfgang Kleemann, D. P. BelangerAbstract:The temperature dependence of the uniform susceptibility, chi, of diluted two-dimensional Ising antiferromagnets Rb2Co1-xMgxF4,0<=x<=0.4, is investigated in the limit of vanishing external field. Novel data for x = 0.15 are compared with those obtained for x = 0 and 0.4 by Breed et al. (1969) and Ikeda (1983), respectively. Whereas in the pure case, x = 0, Fishers (1962) "energetic contribution" dominates, Aharony et al.s (1979,1986) "random contribution" becomes increasingly important with increasing x. Taking into account both terms not only with respect to the global ordering temperature, TN(x), but also in relation to the "local" phase transition temperatures TN throughout the Griffiths regime,TN(x)<=TN<=TN(0), a satisfactory quantitative description of chi vs. T is deduced for any x above the percolation threshold.
N Schopohl - One of the best experts on this subject based on the ideXlab platform.
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strong surface contribution to the nonlinear meissner effect in d wave superconductors
Physical Review Letters, 2010Co-Authors: A Zare, Thomas Dahm, N SchopohlAbstract:We demonstrate that in a d-wave superconductor the bulk nonlinear Meissner effect is Dominated by a surface effect due to Andreev bound states at low temperatures. The contribution of this surface effect to the nonlinear response coefficient follows a 1/T(3) law with the opposite sign compared to the bulk 1/T Behavior. The crossover from bulk Dominated Behavior to surface Dominated Behavior occurs at a temperature of T/T(c) similar to 1/root kappa. We present an approximate analytical calculation, which supports our numerical calculations and provides a qualitative understanding of the effect. The effect can be probed by intermodulation distortion experiments.
G Chen - One of the best experts on this subject based on the ideXlab platform.
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elimination of surface leakage in gate controlled type ii inas gasb mid infrared photodetectors
Applied Physics Letters, 2011Co-Authors: G Chen, Binhminh Nguyen, A M Hoang, Edward Kwei Wei Huang, S R Darvish, Manijeh RazeghiAbstract:The electrical performance of mid-infrared type-II superlattice M-barrier photodetectors is shown to be limited by surface leakage. By applying gate bias on the mesa sidewall surface, leakage current is significantly reduced. Qualitatively IV modeling shows diffusion-Dominated Behavior of dark current at temperatures greater than 120 K. At 110 K, the dark current of gated device is reduced by more than 2 orders of magnitude, reaching the measurement system noise floor. With a quantum efficiency of 48% in front side illumination configuration, a 4.7μm cut-off gated device attains a specific detectivity of 2.5 × 1014 cmHz1/2/W at 110 K, which is 3.6 times higher than in ungated devices.
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Elimination of surface leakage in gate controlled type-II InAs/GaSb mid-infrared photodetectors
Applied Physics Letters, 2011Co-Authors: G Chen, Binhminh Nguyen, A M Hoang, Edward Kwei Wei Huang, S R Darvish, Manijeh RazeghiAbstract:The electrical performance of mid-infrared type-II superlattice M-barrier photodetectors is shown to be limited by surface leakage. By applying gate bias on the mesa sidewall surface, leakage current is significantly reduced. Qualitatively IV modeling shows diffusion-Dominated Behavior of dark current at temperatures greater than 120 K. At 110 K, the dark current of gated device is reduced by more than 2 orders of magnitude, reaching the measurement system noise floor. With a quantum efficiency of 48% in front side illumination configuration, a 4.7μm cut-off gated device attains a specific detectivity of 2.5 × 1014 cmHz1/2/W at 110 K, which is 3.6 times higher than in ungated devices.