The Experts below are selected from a list of 16695 Experts worldwide ranked by ideXlab platform
G Boeck - One of the best experts on this subject based on the ideXlab platform.
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two Stage ultrawide band 5 w power amplifier using sic mesfet
IEEE Transactions on Microwave Theory and Techniques, 2005Co-Authors: A Sayed, G BoeckAbstract:This paper describes a two-Stage 5-W broad-band amplifier covering the frequency range from 10 MHz to 2.4 GHz. An SiC MESFET is used as the power Stage. A large-signal table-based model has been developed and verified for the SiC device by comparison with measurements. A novel broad-band choke structure was developed to obtain high dc isolation and low RF loss over the full bandwidth. No impedance transformer was used at all. Broad-band input and output matching networks and shunt feedback topology were introduced to fulfill the bandwidth requirements. Typical values of 22-dB power gain, 37-dBm output power, 28% power-added efficiency, and 47-dBm third-order intercept points have been achieved in a two-Stage design using a GaAs MESFET as Driver Stage. All power and linearity results were obtained over the whole frequency band. The design procedure is given in detail and the results are being discussed and compared with simulations.
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two Stage ultrawide band 5 w power amplifier using sic mesfet
IEEE Transactions on Microwave Theory and Techniques, 2005Co-Authors: A Sayed, G BoeckAbstract:This paper describes a two-Stage 5-W broad-band amplifier covering the frequency range from 10 MHz to 2.4 GHz. An SiC MESFET is used as the power Stage. A large-signal table-based model has been developed and verified for the SiC device by comparison with measurements. A novel broad-band choke structure was developed to obtain high dc isolation and low RF loss over the full bandwidth. No impedance transformer was used at all. Broad-band input and output matching networks and shunt feedback topology were introduced to fulfill the bandwidth requirements. Typical values of 22-dB power gain, 37-dBm output power, 28% power-added efficiency, and 47-dBm third-order intercept points have been achieved in a two-Stage design using a GaAs MESFET as Driver Stage. All power and linearity results were obtained over the whole frequency band. The design procedure is given in detail and the results are being discussed and compared with simulations.
A Sayed - One of the best experts on this subject based on the ideXlab platform.
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two Stage ultrawide band 5 w power amplifier using sic mesfet
IEEE Transactions on Microwave Theory and Techniques, 2005Co-Authors: A Sayed, G BoeckAbstract:This paper describes a two-Stage 5-W broad-band amplifier covering the frequency range from 10 MHz to 2.4 GHz. An SiC MESFET is used as the power Stage. A large-signal table-based model has been developed and verified for the SiC device by comparison with measurements. A novel broad-band choke structure was developed to obtain high dc isolation and low RF loss over the full bandwidth. No impedance transformer was used at all. Broad-band input and output matching networks and shunt feedback topology were introduced to fulfill the bandwidth requirements. Typical values of 22-dB power gain, 37-dBm output power, 28% power-added efficiency, and 47-dBm third-order intercept points have been achieved in a two-Stage design using a GaAs MESFET as Driver Stage. All power and linearity results were obtained over the whole frequency band. The design procedure is given in detail and the results are being discussed and compared with simulations.
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two Stage ultrawide band 5 w power amplifier using sic mesfet
IEEE Transactions on Microwave Theory and Techniques, 2005Co-Authors: A Sayed, G BoeckAbstract:This paper describes a two-Stage 5-W broad-band amplifier covering the frequency range from 10 MHz to 2.4 GHz. An SiC MESFET is used as the power Stage. A large-signal table-based model has been developed and verified for the SiC device by comparison with measurements. A novel broad-band choke structure was developed to obtain high dc isolation and low RF loss over the full bandwidth. No impedance transformer was used at all. Broad-band input and output matching networks and shunt feedback topology were introduced to fulfill the bandwidth requirements. Typical values of 22-dB power gain, 37-dBm output power, 28% power-added efficiency, and 47-dBm third-order intercept points have been achieved in a two-Stage design using a GaAs MESFET as Driver Stage. All power and linearity results were obtained over the whole frequency band. The design procedure is given in detail and the results are being discussed and compared with simulations.
Seigo Sano - One of the best experts on this subject based on the ideXlab platform.
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a 80w 2 Stage gan hemt doherty amplifier with 50dbc aclr 42 efficiency 32db gain with dpd for w cdma base station
International Microwave Symposium, 2007Co-Authors: H Sano, Seigo SanoAbstract:A 2-Stage 80 W amplifier, which consists of a 450 W saturated power GaN HEMT Doherty amplifier and a 30 W Driver, was developed. At first we developed the 450 W GaN HEMT Doherty amplifier and obtained saturation power of 56.5 dBm(450 W) and drain efficiency of 55% at 6 dB back-off power showing typical Doherty amplifier behavior. Then we built the 2-Stage amplifier up with the 30 W Driver Stage amplifier. With this amplifier we obtained 42% efficiency (including 30 W Driver amplifier) and -50 dBc ACLR at the average power of 49 dBm(80 W) with saturation power of 56.5 dBm and Gain of 32 dB.
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a 80w 2 Stage gan hemt doherty amplifier with 50dbc aclr 42 efficiency 32db gain with dpd for w cdma base station
International Microwave Symposium, 2007Co-Authors: N Ui, H Sano, Seigo SanoAbstract:A 2-Stage 80 W amplifier, which consists of a 450 W saturated power GaN HEMT Doherty amplifier and a 30 W Driver, was developed. At first we developed the 450 W GaN HEMT Doherty amplifier and obtained saturation power of 56.5 dBm(450 W) and drain efficiency of 55% at 6 dB back-off power showing typical Doherty amplifier behavior. Then we built the 2-Stage amplifier up with the 30 W Driver Stage amplifier. With this amplifier we obtained 42% efficiency (including 30 W Driver amplifier) and -50 dBc ACLR at the average power of 49 dBm(80 W) with saturation power of 56.5 dBm and Gain of 32 dB.
Stéphane Forestier - One of the best experts on this subject based on the ideXlab platform.
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Two-Stage GaN HEMT amplifier with gate-source voltage shaping for efficiency versus bandwidth enhancements
IEEE Transactions on Microwave Theory and Techniques, 2011Co-Authors: Alaaeddine Ramadan, Ph Bouysse, JEAN-FRANCOIS VILLEMAZET, Tibault Reveyrand, Jean-michel Nebus, Luc Lapierre, A. Martin, Stéphane ForestierAbstract:In this paper a two-Stage 2-GHz GaN HEMT amplifier with 15-W output power, 28-dB power gain, and 70% power-added efficiency (PAE) is presented. The power Stage is designed to operate under class F conditions. The Driver Stage operates under class F-1 conditions and feeds the power Stage with both fundamental and second harmonic components. The inter Stage matching is designed to target a quasi-half sine voltage shape at the intrinsic gate port of the power Stage. The goal is to reduce aperture angle of the power Stage and get PAE improvements over a wide frequency bandwidth. In addition to the amplifier design description, this paper reports original time-domain waveform measurements at internal nodes of the designed two-Stage power amplifier using calibrated high-impedance probes and large signal network analyzer. Furthermore, waveform measurements recorded at different frequencies show that aperture angle remains reduced over large frequency bandwidth. In this study, a PAE greater than 60% is reached over 20% frequency bandwidth.
H Sano - One of the best experts on this subject based on the ideXlab platform.
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a 80w 2 Stage gan hemt doherty amplifier with 50dbc aclr 42 efficiency 32db gain with dpd for w cdma base station
International Microwave Symposium, 2007Co-Authors: H Sano, Seigo SanoAbstract:A 2-Stage 80 W amplifier, which consists of a 450 W saturated power GaN HEMT Doherty amplifier and a 30 W Driver, was developed. At first we developed the 450 W GaN HEMT Doherty amplifier and obtained saturation power of 56.5 dBm(450 W) and drain efficiency of 55% at 6 dB back-off power showing typical Doherty amplifier behavior. Then we built the 2-Stage amplifier up with the 30 W Driver Stage amplifier. With this amplifier we obtained 42% efficiency (including 30 W Driver amplifier) and -50 dBc ACLR at the average power of 49 dBm(80 W) with saturation power of 56.5 dBm and Gain of 32 dB.
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a 80w 2 Stage gan hemt doherty amplifier with 50dbc aclr 42 efficiency 32db gain with dpd for w cdma base station
International Microwave Symposium, 2007Co-Authors: N Ui, H Sano, Seigo SanoAbstract:A 2-Stage 80 W amplifier, which consists of a 450 W saturated power GaN HEMT Doherty amplifier and a 30 W Driver, was developed. At first we developed the 450 W GaN HEMT Doherty amplifier and obtained saturation power of 56.5 dBm(450 W) and drain efficiency of 55% at 6 dB back-off power showing typical Doherty amplifier behavior. Then we built the 2-Stage amplifier up with the 30 W Driver Stage amplifier. With this amplifier we obtained 42% efficiency (including 30 W Driver amplifier) and -50 dBc ACLR at the average power of 49 dBm(80 W) with saturation power of 56.5 dBm and Gain of 32 dB.
